DE69124672T2 - Verfahren zur Substratbearbeitung - Google Patents

Verfahren zur Substratbearbeitung

Info

Publication number
DE69124672T2
DE69124672T2 DE69124672T DE69124672T DE69124672T2 DE 69124672 T2 DE69124672 T2 DE 69124672T2 DE 69124672 T DE69124672 T DE 69124672T DE 69124672 T DE69124672 T DE 69124672T DE 69124672 T2 DE69124672 T2 DE 69124672T2
Authority
DE
Germany
Prior art keywords
substrate
rate
plasma
ashing
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69124672T
Other languages
German (de)
English (en)
Other versions
DE69124672D1 (de
Inventor
Yutaka Amemiya
Akihito Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE69124672D1 publication Critical patent/DE69124672D1/de
Application granted granted Critical
Publication of DE69124672T2 publication Critical patent/DE69124672T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3345—Problems associated with etching anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
DE69124672T 1990-11-30 1991-11-29 Verfahren zur Substratbearbeitung Expired - Lifetime DE69124672T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2335671A JP2888258B2 (ja) 1990-11-30 1990-11-30 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
DE69124672D1 DE69124672D1 (de) 1997-03-27
DE69124672T2 true DE69124672T2 (de) 1997-06-19

Family

ID=18291212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124672T Expired - Lifetime DE69124672T2 (de) 1990-11-30 1991-11-29 Verfahren zur Substratbearbeitung

Country Status (6)

Country Link
US (1) US5385624A (enExample)
EP (2) EP0488393B1 (enExample)
JP (1) JP2888258B2 (enExample)
KR (1) KR100238623B1 (enExample)
DE (1) DE69124672T2 (enExample)
TW (1) TW285745B (enExample)

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US5571577A (en) * 1995-04-07 1996-11-05 Board Of Trustees Operating Michigan State University Method and apparatus for plasma treatment of a surface
KR100275597B1 (ko) * 1996-02-23 2000-12-15 나카네 히사시 플리즈마처리장치
US6248206B1 (en) * 1996-10-01 2001-06-19 Applied Materials Inc. Apparatus for sidewall profile control during an etch process
DE19734278C1 (de) * 1997-08-07 1999-02-25 Bosch Gmbh Robert Vorrichtung zum anisotropen Ätzen von Substraten
JP3317209B2 (ja) * 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
US6049736A (en) * 1997-09-03 2000-04-11 Medtronic, Inc. Implantable medical device with electrode lead having improved surface characteristics
US6399445B1 (en) 1997-12-18 2002-06-04 Texas Instruments Incorporated Fabrication technique for controlled incorporation of nitrogen in gate dielectric
US6107192A (en) * 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
US6013316A (en) 1998-02-07 2000-01-11 Odme Disc master drying cover assembly
US6352049B1 (en) 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
JP2002503031A (ja) * 1998-02-09 2002-01-29 アプライド マテリアルズ インコーポレイテッド 種密度を個別制御するプラズマアシスト処理チャンバ
US6074514A (en) * 1998-02-09 2000-06-13 Applied Materials, Inc. High selectivity etch using an external plasma discharge
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US6611249B1 (en) 1998-07-22 2003-08-26 Silicon Graphics, Inc. System and method for providing a wide aspect ratio flat panel display monitor independent white-balance adjustment and gamma correction capabilities
US6742701B2 (en) * 1998-09-17 2004-06-01 Kabushiki Kaisha Tamura Seisakusho Bump forming method, presoldering treatment method, soldering method, bump forming apparatus, presoldering treatment device and soldering apparatus
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JP4382265B2 (ja) * 2000-07-12 2009-12-09 日本電気株式会社 酸化シリコン膜の形成方法及びその形成装置
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AU2002363972A1 (en) * 2001-11-21 2003-06-10 The Regents Of The University Of California Low temperature compatible wide-pressure-range plasma flow device
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US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
KR100496903B1 (ko) * 2002-10-12 2005-06-28 주식회사 아이피에스 Ａｌｄ 박막증착장치 및 그를 이용한 박막증착방법
KR100496906B1 (ko) * 2002-10-21 2005-06-28 주식회사 아이피에스 Ａｌｄ 박막증착장치
US7604708B2 (en) 2003-02-14 2009-10-20 Applied Materials, Inc. Cleaning of native oxide with hydrogen-containing radicals
US7232767B2 (en) * 2003-04-01 2007-06-19 Mattson Technology, Inc. Slotted electrostatic shield modification for improved etch and CVD process uniformity
FR2858333B1 (fr) 2003-07-31 2006-12-08 Cit Alcatel Procede et dispositif pour le depot peu agressif de films dielectriques en phase vapeur assiste par plasma
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
KR100561848B1 (ko) * 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치
JP4246654B2 (ja) * 2004-03-08 2009-04-02 株式会社日立ハイテクノロジーズ 真空処理装置
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US20090011150A1 (en) * 2004-08-04 2009-01-08 Hyeong-Tag Jeon Remote Plasma Atomic Layer Deposition Apparatus and Method Using Dc Bias
US7597816B2 (en) * 2004-09-03 2009-10-06 Lam Research Corporation Wafer bevel polymer removal
US7879510B2 (en) 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
US7829243B2 (en) * 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
KR100823949B1 (ko) * 2005-06-30 2008-04-22 어플라이드 머티어리얼스, 인코포레이티드 포토마스크 플라즈마 에칭 방법 및 장치
US7358484B2 (en) 2005-09-29 2008-04-15 Tokyo Electron Limited Hyperthermal neutral beam source and method of operating
JP2008052911A (ja) * 2006-08-22 2008-03-06 Shinku Device:Kk プラズマ照射装置
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7909961B2 (en) 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US20080156772A1 (en) * 2006-12-29 2008-07-03 Yunsang Kim Method and apparatus for wafer edge processing
US20080179008A1 (en) 2007-01-30 2008-07-31 Collins Kenneth S Reactor for wafer backside polymer removal using an etch plasma feeding a lower process zone and a scavenger plasma feeding an upper process zone
US7967996B2 (en) 2007-01-30 2011-06-28 Applied Materials, Inc. Process for wafer backside polymer removal and wafer front side photoresist removal
US8334506B2 (en) * 2007-12-10 2012-12-18 1St Detect Corporation End cap voltage control of ion traps
US7973277B2 (en) * 2008-05-27 2011-07-05 1St Detect Corporation Driving a mass spectrometer ion trap or mass filter
CN101640997B (zh) * 2008-07-31 2011-10-05 英业达股份有限公司 主板模块阵列
US20100270262A1 (en) * 2009-04-22 2010-10-28 Applied Materials, Inc. Etching low-k dielectric or removing resist with a filtered ionized gas
JP5486383B2 (ja) * 2010-04-13 2014-05-07 富士フイルム株式会社 ドライエッチング方法及び装置
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
CN103766001B (zh) * 2011-09-09 2016-06-29 东芝三菱电机产业系统株式会社 等离子体产生装置及cvd装置
KR101495288B1 (ko) * 2012-06-04 2015-02-24 피에스케이 주식회사 기판 처리 장치 및 방법
JP2014049529A (ja) * 2012-08-30 2014-03-17 Tokyo Electron Ltd プラズマ処理装置及び金属の酸化膜を洗浄する方法
WO2014161199A1 (zh) * 2013-04-03 2014-10-09 Wang Dongjun 等离子体增强原子层沉积设备
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FR3022070B1 (fr) * 2014-06-04 2016-06-24 Univ Aix Marseille Procede de texturation aleatoire d'un substrat semiconducteur
JP2017152531A (ja) * 2016-02-24 2017-08-31 東京エレクトロン株式会社 基板処理方法
JP2017162931A (ja) * 2016-03-08 2017-09-14 株式会社ディスコ デバイスチップの製造方法
KR102096700B1 (ko) * 2017-03-29 2020-04-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
CN111527583B (zh) * 2017-12-27 2023-10-20 玛特森技术公司 等离子体处理设备和方法
KR20210079649A (ko) * 2019-12-20 2021-06-30 주식회사 원익아이피에스 원자층 식각 방법
US12409644B2 (en) 2020-09-30 2025-09-09 Tadatomo Suga Substrate bonding method and substrate bonding system
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Also Published As

Publication number Publication date
DE69124672D1 (de) 1997-03-27
JP2888258B2 (ja) 1999-05-10
US5385624A (en) 1995-01-31
KR920010777A (ko) 1992-06-27
EP0488393B1 (en) 1997-02-12
EP0488393A2 (en) 1992-06-03
EP0680070A1 (en) 1995-11-02
TW285745B (enExample) 1996-09-11
JPH04206719A (ja) 1992-07-28
KR100238623B1 (ko) 2000-01-15
EP0488393A3 (en) 1992-07-15

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