DE69123677D1 - Reflektionsmaske und eine solche Reflektionsmaske verwendendes geladenes Teilchenstrahl-Belichtungsgerät - Google Patents

Reflektionsmaske und eine solche Reflektionsmaske verwendendes geladenes Teilchenstrahl-Belichtungsgerät

Info

Publication number
DE69123677D1
DE69123677D1 DE69123677T DE69123677T DE69123677D1 DE 69123677 D1 DE69123677 D1 DE 69123677D1 DE 69123677 T DE69123677 T DE 69123677T DE 69123677 T DE69123677 T DE 69123677T DE 69123677 D1 DE69123677 D1 DE 69123677D1
Authority
DE
Germany
Prior art keywords
reflection mask
exposure apparatus
charged particle
particle beam
beam exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69123677T
Other languages
English (en)
Other versions
DE69123677T2 (de
Inventor
Hirotsugu Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69123677D1 publication Critical patent/DE69123677D1/de
Application granted granted Critical
Publication of DE69123677T2 publication Critical patent/DE69123677T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31789—Reflection mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
DE69123677T 1990-09-28 1991-09-18 Reflektionsmaske und eine solche Reflektionsmaske verwendendes geladenes Teilchenstrahl-Belichtungsgerät Expired - Fee Related DE69123677T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2256960A JP2957669B2 (ja) 1990-09-28 1990-09-28 反射マスク及びこれを用いた荷電ビーム露光装置

Publications (2)

Publication Number Publication Date
DE69123677D1 true DE69123677D1 (de) 1997-01-30
DE69123677T2 DE69123677T2 (de) 1997-05-28

Family

ID=17299763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69123677T Expired - Fee Related DE69123677T2 (de) 1990-09-28 1991-09-18 Reflektionsmaske und eine solche Reflektionsmaske verwendendes geladenes Teilchenstrahl-Belichtungsgerät

Country Status (5)

Country Link
US (1) US5254417A (de)
EP (1) EP0478215B1 (de)
JP (1) JP2957669B2 (de)
KR (1) KR950014607B1 (de)
DE (1) DE69123677T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354583A (en) * 1992-11-09 1994-10-11 Martin Marietta Energy Systems, Inc. Apparatus and method for selective area deposition of thin films on electrically biased substrates
USRE40928E1 (en) 1993-10-29 2009-10-06 Tdk Corporation Optical pickup
US5724337A (en) * 1993-10-29 1998-03-03 Tdk Corporation Optical pickup with a compact design
JP3299647B2 (ja) * 1994-11-30 2002-07-08 株式会社日立製作所 電子線描画装置および電子線描画方法
US6008121A (en) * 1996-03-19 1999-12-28 Siemens Aktiengesellschaft Etching high aspect contact holes in solid state devices
JP3565652B2 (ja) * 1996-04-25 2004-09-15 富士通株式会社 荷電粒子ビーム露光装置用透過マスク及びそれを利用した露光装置
DE10084761T1 (de) 1999-07-02 2002-07-11 Michael Mauck Verfahren und Gerät zum gleichzeitigen Abscheiden und Beobachten von Materialien auf einem Target
FR2800477B1 (fr) * 1999-10-27 2003-09-19 X Ion Procede de lithographie ionique, equipement de mise en oeuvre, et reticule pour un tel equipement
FR2804246B1 (fr) * 2000-01-21 2003-09-19 X Ion Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre
FR2804764A1 (fr) * 2000-02-04 2001-08-10 X Ion Reticule actif, procede de realisation et de controle d'un tel reticule, procede de lithographie ionique utilisant un tel reticule et equipement de mise en oeuvre
FR2808378B1 (fr) * 2000-04-27 2003-08-15 X Ion Reticule actif, procede de realisation d'un tel reticule, procede de lithographie ionique utilisant un tel reticule et equipement de mise en oeuvre
JP4006216B2 (ja) 2001-10-26 2007-11-14 日本電子株式会社 可変面積型電子ビーム描画装置を用いた描画方法
US7432514B2 (en) * 2002-03-26 2008-10-07 International Business Machines Corporation Method and apparatus for surface potential reflection electron mask lithography
US6822246B2 (en) * 2002-03-27 2004-11-23 Kla-Tencor Technologies Corporation Ribbon electron beam for inspection system
JP4158199B2 (ja) * 2004-01-30 2008-10-01 株式会社島津製作所 Ｔｆｔアレイ検査装置
US7816655B1 (en) * 2004-05-21 2010-10-19 Kla-Tencor Technologies Corporation Reflective electron patterning device and method of using same
JP2007012516A (ja) * 2005-07-01 2007-01-18 Jeol Ltd 荷電粒子ビーム装置及び荷電粒子ビームを用いた試料情報検出方法
US7358512B1 (en) * 2006-03-28 2008-04-15 Kla-Tencor Technologies Corporation Dynamic pattern generator for controllably reflecting charged-particles
US7566882B1 (en) * 2006-12-14 2009-07-28 Kla-Tencor Technologies Corporation Reflection lithography using rotating platter
US9355818B2 (en) * 2010-05-28 2016-05-31 Kla-Tencor Corporation Reflection electron beam projection lithography using an ExB separator
US8373144B1 (en) * 2010-08-31 2013-02-12 Kla-Tencor Corporation Quasi-annular reflective electron patterning device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5354974A (en) * 1976-10-29 1978-05-18 Mitsubishi Electric Corp Electron beam exposure system
FR2461281A2 (fr) * 1979-07-06 1981-01-30 Thomson Csf Dispositif de microlithographie par bombardement electronique
NL8201732A (nl) * 1982-04-27 1983-11-16 Bernardus Johannes Gerardus Ma Bestralingsinrichting met bundelsplitsing.
DE68924122T2 (de) * 1988-10-20 1996-05-09 Fujitsu Ltd Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl.
US5130213A (en) * 1989-08-07 1992-07-14 At&T Bell Laboratories Device manufacture involving lithographic processing
JPH05329080A (ja) * 1992-05-29 1993-12-14 Tokyo Electric Co Ltd 電気掃除機

Also Published As

Publication number Publication date
JP2957669B2 (ja) 1999-10-06
KR950014607B1 (ko) 1995-12-11
EP0478215B1 (de) 1996-12-18
JPH04137519A (ja) 1992-05-12
EP0478215A2 (de) 1992-04-01
DE69123677T2 (de) 1997-05-28
US5254417A (en) 1993-10-19
EP0478215A3 (de) 1992-04-22

Similar Documents

Publication Publication Date Title
DE69123677D1 (de) Reflektionsmaske und eine solche Reflektionsmaske verwendendes geladenes Teilchenstrahl-Belichtungsgerät
DE59108193D1 (de) Teilchenstrahlgerät
EP0486316A3 (en) Projection exposure method and apparatus
DE69133063D1 (de) Ladungsträgerstrahlgerät
HK1017823A1 (en) Method and device for optical exposure
NO934425D0 (no) Preparater for nanopartikkelformige roentgenkontrastmidler
DE69023023T2 (de) Röntgenstrahl-Maskenstruktur und Röntgenstrahl-Belichtungsverfahren.
DE68929187D1 (de) Belichtungsapparat
EP0507487A3 (en) Optical projection exposure method and system using the same
EP0342061A3 (en) Projection exposure apparatus
KR920004177B1 (en) Charging particle beam exposure system using line-beam
DE68926517T2 (de) Lichtempfindliches Material und Bilderzeugungsverfahren
EP0327093A3 (en) Electron beam exposure method and apparatus
DE69322345T2 (de) Synchrotron-Röntgenbelichtungsverfahren
NO903698D0 (no) Forming med laserstraale og eksponeringsmaske.
GB2218531B (en) Alignment and exposure apparatus
DE69033791T2 (de) Röntgenbelichtungsvorrichtung
DE69028478T2 (de) Belichtungsmaske
DE69027142T2 (de) Röntgenstrahl-Belichtungsapparat
EP0443565A3 (en) Electron beam exposure apparatus
EP0458539A3 (en) X-ray exposure apparatus and a mask usable therewithin
DE69314610T2 (de) Elektronenstrahllithografie-Verfahren und -Gerät
EP0434990A3 (en) Charged-particle beam exposure method and apparatus
DE69021025D1 (de) Elektronenstrahl-Belichtungsverfahren und Gerät hierfür.
DE69028248D1 (de) Elektronenstrahl-Belichtungsgerät

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee