FR2804246B1 - Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre - Google Patents
Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvreInfo
- Publication number
- FR2804246B1 FR2804246B1 FR0000764A FR0000764A FR2804246B1 FR 2804246 B1 FR2804246 B1 FR 2804246B1 FR 0000764 A FR0000764 A FR 0000764A FR 0000764 A FR0000764 A FR 0000764A FR 2804246 B1 FR2804246 B1 FR 2804246B1
- Authority
- FR
- France
- Prior art keywords
- reticle
- implementation
- equipment
- high contrast
- lithography process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
- H01J2237/31755—Lithography using particular beams or near-field effects, e.g. STM-like techniques using ion beams
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0000764A FR2804246B1 (fr) | 2000-01-21 | 2000-01-21 | Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre |
AU2001221837A AU2001221837A1 (en) | 2000-01-21 | 2000-12-05 | Method for ionic lithography, high contrast coating, equipment and reticle therefor |
PCT/FR2000/003392 WO2001053891A1 (fr) | 2000-01-21 | 2000-12-05 | Procede de lithographie ionique, revetement a fort contraste, equipement et reticule de mise en oeuvre |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0000764A FR2804246B1 (fr) | 2000-01-21 | 2000-01-21 | Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2804246A1 FR2804246A1 (fr) | 2001-07-27 |
FR2804246B1 true FR2804246B1 (fr) | 2003-09-19 |
Family
ID=8846158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0000764A Expired - Fee Related FR2804246B1 (fr) | 2000-01-21 | 2000-01-21 | Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001221837A1 (fr) |
FR (1) | FR2804246B1 (fr) |
WO (1) | WO2001053891A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3475890B2 (ja) * | 2000-02-10 | 2003-12-10 | Tdk株式会社 | パターニング方法、薄膜デバイスの製造方法及び薄膜磁気ヘッドの製造方法 |
FR2849266A1 (fr) * | 2002-12-18 | 2004-06-25 | Gilles Borsoni | Machine de traitement uniforme de surfaces d'echantillons par projection d'ions multicharges |
US8053725B2 (en) * | 2009-06-29 | 2011-11-08 | Fei Company | Beam quality in FIB systems |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT391771B (de) * | 1987-03-05 | 1990-11-26 | Ims Ionen Mikrofab Syst | Einrichtung zur verkleinernden oder 1 : 1 ionenprojektionslithographie |
JP2957669B2 (ja) * | 1990-09-28 | 1999-10-06 | 株式会社東芝 | 反射マスク及びこれを用いた荷電ビーム露光装置 |
JPH088245B2 (ja) * | 1990-09-28 | 1996-01-29 | 株式会社島津製作所 | 集束イオンビームエッチング装置 |
JP3542140B2 (ja) * | 1997-09-10 | 2004-07-14 | 株式会社日立製作所 | 投射型イオンビーム加工装置 |
-
2000
- 2000-01-21 FR FR0000764A patent/FR2804246B1/fr not_active Expired - Fee Related
- 2000-12-05 WO PCT/FR2000/003392 patent/WO2001053891A1/fr active Application Filing
- 2000-12-05 AU AU2001221837A patent/AU2001221837A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2001053891A1 (fr) | 2001-07-26 |
AU2001221837A1 (en) | 2001-07-31 |
FR2804246A1 (fr) | 2001-07-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |