AU2001221837A1 - Method for ionic lithography, high contrast coating, equipment and reticle therefor - Google Patents

Method for ionic lithography, high contrast coating, equipment and reticle therefor

Info

Publication number
AU2001221837A1
AU2001221837A1 AU2001221837A AU2183701A AU2001221837A1 AU 2001221837 A1 AU2001221837 A1 AU 2001221837A1 AU 2001221837 A AU2001221837 A AU 2001221837A AU 2183701 A AU2183701 A AU 2183701A AU 2001221837 A1 AU2001221837 A1 AU 2001221837A1
Authority
AU
Australia
Prior art keywords
equipment
high contrast
contrast coating
reticle
therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001221837A
Other languages
English (en)
Inventor
Gilles Borsoni
Gianni Giardino
Jean-Pierre Lazzari
Vincent Le Roux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Ion SA
Original Assignee
X Ion SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Ion SA filed Critical X Ion SA
Publication of AU2001221837A1 publication Critical patent/AU2001221837A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31755—Lithography using particular beams or near-field effects, e.g. STM-like techniques using ion beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AU2001221837A 2000-01-21 2000-12-05 Method for ionic lithography, high contrast coating, equipment and reticle therefor Abandoned AU2001221837A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0000764 2000-01-21
FR0000764A FR2804246B1 (fr) 2000-01-21 2000-01-21 Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre
PCT/FR2000/003392 WO2001053891A1 (fr) 2000-01-21 2000-12-05 Procede de lithographie ionique, revetement a fort contraste, equipement et reticule de mise en oeuvre

Publications (1)

Publication Number Publication Date
AU2001221837A1 true AU2001221837A1 (en) 2001-07-31

Family

ID=8846158

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001221837A Abandoned AU2001221837A1 (en) 2000-01-21 2000-12-05 Method for ionic lithography, high contrast coating, equipment and reticle therefor

Country Status (3)

Country Link
AU (1) AU2001221837A1 (fr)
FR (1) FR2804246B1 (fr)
WO (1) WO2001053891A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3475890B2 (ja) * 2000-02-10 2003-12-10 Ｔｄｋ株式会社 パターニング方法、薄膜デバイスの製造方法及び薄膜磁気ヘッドの製造方法
FR2849266A1 (fr) * 2002-12-18 2004-06-25 Gilles Borsoni Machine de traitement uniforme de surfaces d'echantillons par projection d'ions multicharges
US8053725B2 (en) 2009-06-29 2011-11-08 Fei Company Beam quality in FIB systems

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT391771B (de) * 1987-03-05 1990-11-26 Ims Ionen Mikrofab Syst Einrichtung zur verkleinernden oder 1 : 1 ionenprojektionslithographie
JP2957669B2 (ja) * 1990-09-28 1999-10-06 株式会社東芝 反射マスク及びこれを用いた荷電ビーム露光装置
JPH088245B2 (ja) * 1990-09-28 1996-01-29 株式会社島津製作所 集束イオンビームエッチング装置
US6583426B1 (en) * 1997-09-10 2003-06-24 Hitachi, Ltd. Projection ion beam machining apparatus

Also Published As

Publication number Publication date
FR2804246A1 (fr) 2001-07-27
FR2804246B1 (fr) 2003-09-19
WO2001053891A1 (fr) 2001-07-26

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