AU2002210637A1 - Highly selective ionic lithography method - Google Patents

Highly selective ionic lithography method

Info

Publication number
AU2002210637A1
AU2002210637A1 AU2002210637A AU1063702A AU2002210637A1 AU 2002210637 A1 AU2002210637 A1 AU 2002210637A1 AU 2002210637 A AU2002210637 A AU 2002210637A AU 1063702 A AU1063702 A AU 1063702A AU 2002210637 A1 AU2002210637 A1 AU 2002210637A1
Authority
AU
Australia
Prior art keywords
highly selective
lithography method
selective ionic
ionic lithography
highly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002210637A
Inventor
Jean-Pierre Lazzari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Ion SA
Original Assignee
X Ion SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Ion SA filed Critical X Ion SA
Publication of AU2002210637A1 publication Critical patent/AU2002210637A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
AU2002210637A 2000-10-23 2001-10-15 Highly selective ionic lithography method Abandoned AU2002210637A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0013507 2000-10-23
FR0013507A FR2815770A1 (en) 2000-10-23 2000-10-23 Highly selective ionic lithography by an active interaction between multicharged and decelerated ions and the dielectric layer to be engraved and the selective neutralization of these ions outside the active interaction
PCT/FR2001/003188 WO2002035596A1 (en) 2000-10-23 2001-10-15 Highly selective ionic lithography method

Publications (1)

Publication Number Publication Date
AU2002210637A1 true AU2002210637A1 (en) 2002-05-06

Family

ID=8855592

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002210637A Abandoned AU2002210637A1 (en) 2000-10-23 2001-10-15 Highly selective ionic lithography method

Country Status (4)

Country Link
EP (1) EP1328967A1 (en)
AU (1) AU2002210637A1 (en)
FR (1) FR2815770A1 (en)
WO (1) WO2002035596A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9206109B2 (en) 2012-12-19 2015-12-08 Basf Se Method of stabilizing polymerizable compounds
DE102012223695A1 (en) 2012-12-19 2014-06-26 Basf Se Process for the stabilization of polymerizable compounds

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5327475A (en) * 1992-08-18 1994-07-05 Ruxam, Inc. Soft x-ray submicron lithography using multiply charged ions
JPH06291095A (en) * 1993-03-31 1994-10-18 Hitachi Ltd Pattern forming method
JPH07230985A (en) * 1994-02-18 1995-08-29 Hitachi Ltd Surface treating method and device therefor
FR2757881B1 (en) * 1996-12-31 1999-04-09 Univ Paris Curie PROCESS FOR TREATING A SURFACE OF A SEMICONDUCTOR, CORRESPONDING DEVICE AND ASSOCIATED SEMICONDUCTOR
FR2794892B1 (en) * 1999-06-08 2003-06-27 X Ion DIELECTRIC THIN LAYER ETCHING PROCESS ON SILICON SUBSTRATE AND IMPLEMENTING EQUIPMENT

Also Published As

Publication number Publication date
EP1328967A1 (en) 2003-07-23
FR2815770A1 (en) 2002-04-26
WO2002035596A1 (en) 2002-05-02

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