AU2001240136A1 - Method and apparatus for repairing lithography masks using charged particle beam system - Google Patents

Method and apparatus for repairing lithography masks using charged particle beam system

Info

Publication number
AU2001240136A1
AU2001240136A1 AU2001240136A AU4013601A AU2001240136A1 AU 2001240136 A1 AU2001240136 A1 AU 2001240136A1 AU 2001240136 A AU2001240136 A AU 2001240136A AU 4013601 A AU4013601 A AU 4013601A AU 2001240136 A1 AU2001240136 A1 AU 2001240136A1
Authority
AU
Australia
Prior art keywords
charged particle
particle beam
beam system
lithography masks
repairing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001240136A
Inventor
James David Casey Jr.
David C. Ferranti
Sharon M. Szelag
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Publication of AU2001240136A1 publication Critical patent/AU2001240136A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Sources, Ion Sources (AREA)
AU2001240136A 2000-03-10 2001-03-09 Method and apparatus for repairing lithography masks using charged particle beam system Abandoned AU2001240136A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09522561 2000-03-10
US09/522,561 US6322672B1 (en) 2000-03-10 2000-03-10 Method and apparatus for milling copper interconnects in a charged particle beam system
PCT/US2001/007623 WO2001068938A1 (en) 2000-03-10 2001-03-09 Method and apparatus for repairing lithography masks using a charged particle beam system

Publications (1)

Publication Number Publication Date
AU2001240136A1 true AU2001240136A1 (en) 2001-09-24

Family

ID=24081356

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001240136A Abandoned AU2001240136A1 (en) 2000-03-10 2001-03-09 Method and apparatus for repairing lithography masks using charged particle beam system

Country Status (6)

Country Link
US (2) US6322672B1 (en)
EP (2) EP1261752B1 (en)
JP (2) JP4728553B2 (en)
AU (1) AU2001240136A1 (en)
DE (2) DE60128659T2 (en)
WO (2) WO2001068938A1 (en)

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US6322672B1 (en) 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
US6407001B1 (en) 2000-06-30 2002-06-18 Intel Corporation Focused ion beam etching of copper
US20060051508A1 (en) * 2000-12-28 2006-03-09 Ilan Gavish Focused ion beam deposition
US6638580B2 (en) * 2000-12-29 2003-10-28 Intel Corporation Apparatus and a method for forming an alloy layer over a substrate using an ion beam
US6492261B2 (en) 2000-12-30 2002-12-10 Intel Corporation Focused ion beam metal deposition
US6514866B2 (en) * 2001-01-12 2003-02-04 North Carolina State University Chemically enhanced focused ion beam micro-machining of copper
US6730237B2 (en) * 2001-06-22 2004-05-04 International Business Machines Corporation Focused ion beam process for removal of copper
EP1423870A2 (en) 2001-08-27 2004-06-02 Nptest, Inc. Process for charged particle beam micro-machining of copper
US6888150B2 (en) 2001-12-13 2005-05-03 Sony International (Europe) Gmbh Method for defect and conductivity engineering of a conducting nanoscaled structure
EP1320117A3 (en) * 2001-12-13 2003-11-26 Sony International (Europe) GmbH Method for defect and conductivity engineering of a conducting nanoscaled structure
AU2003211027A1 (en) * 2002-03-27 2003-10-13 Nanoink, Inc. Method and apparatus for aligning patterns on a substrate
US6933081B2 (en) * 2002-05-15 2005-08-23 Micron Technology, Inc. Method for quartz bump defect repair with less substrate damage
DE10230755A1 (en) * 2002-07-09 2004-01-22 Carl Zeiss Jena Gmbh Arrangement for the production of photomasks
US20040121069A1 (en) * 2002-08-08 2004-06-24 Ferranti David C. Repairing defects on photomasks using a charged particle beam and topographical data from a scanning probe microscope
US7150811B2 (en) * 2002-11-26 2006-12-19 Pei Company Ion beam for target recovery
US20040132287A1 (en) * 2003-01-07 2004-07-08 International Business Machines Corporation Dry etch process for copper
US7727681B2 (en) * 2003-01-16 2010-06-01 Fei Company Electron beam processing for mask repair
US6863787B2 (en) * 2003-04-02 2005-03-08 Fei Company Dummy copper deprocessing
US7060196B2 (en) * 2003-10-03 2006-06-13 Credence Systems Corporation FIB milling of copper over organic dielectrics
US20060099519A1 (en) * 2004-11-10 2006-05-11 Moriarty Michael H Method of depositing a material providing a specified attenuation and phase shift
DE102005004070B3 (en) * 2005-01-28 2006-08-03 Infineon Technologies Ag Lithographic mask`s defective material removing method for highly integrated circuit, involves applying absorbing material in outer region after removal of defective material to form transmitting region with desired phase difference on mask
US7388218B2 (en) * 2005-04-04 2008-06-17 Fei Company Subsurface imaging using an electron beam
US7670956B2 (en) 2005-04-08 2010-03-02 Fei Company Beam-induced etching
KR20070120605A (en) * 2005-04-14 2007-12-24 더 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 Adjustable solubility in sacrificial layers for microfabrication
DE102006043874B4 (en) * 2006-09-15 2020-07-09 Carl Zeiss Smt Gmbh Method and device for repairing photolithography masks
JP5959139B2 (en) * 2006-10-20 2016-08-02 エフ・イ−・アイ・カンパニー Method for analyzing S / TEM samples
JP5266236B2 (en) 2006-10-20 2013-08-21 エフ・イ−・アイ・カンパニー Methods and apparatus for sample extraction and handling
TWI479570B (en) 2007-12-26 2015-04-01 Nawotec Gmbh Methods and systems for removing a material from a sample
US7880151B2 (en) * 2008-02-28 2011-02-01 Fei Company Beam positioning for beam processing
US8778804B2 (en) * 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch
WO2010147172A1 (en) * 2009-06-18 2010-12-23 Hoya株式会社 Mask blank, transfer mask, and method for manufacturing transfer masks
EP2610889A3 (en) 2011-12-27 2015-05-06 Fei Company Drift control in a charged particle beam system
JP5949257B2 (en) * 2012-07-19 2016-07-06 株式会社ソシオネクスト Wiring processing method
US10465293B2 (en) * 2012-08-31 2019-11-05 Fei Company Dose-based end-pointing for low-kV FIB milling TEM sample preparation
EP3104155A1 (en) 2015-06-09 2016-12-14 FEI Company Method of analyzing surface modification of a specimen in a charged-particle microscope
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
DE102019201468A1 (en) * 2019-02-05 2020-08-06 Carl Zeiss Smt Gmbh Device and method for repairing a photolithographic mask
DE102020208183A1 (en) * 2020-06-30 2021-12-30 Carl Zeiss Smt Gmbh METHOD AND DEVICE FOR PROCESSING A LITHOGRAPHIC MASK
DE102021123440A1 (en) * 2021-09-10 2023-03-16 Carl Zeiss Smt Gmbh Method for particle beam-induced processing of a defect of a photomask for microlithography

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US5228501A (en) * 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
JPS6476412A (en) * 1987-09-17 1989-03-22 Fuji Photo Film Co Ltd Production of thin film magnetic head
WO1989004052A1 (en) * 1987-10-22 1989-05-05 Oxford Instruments Limited Exposing substrates to ion beams
JPH01280759A (en) * 1988-05-06 1989-11-10 Seiko Instr Inc Method for removing pattern film
US4874460A (en) * 1987-11-16 1989-10-17 Seiko Instruments Inc. Method and apparatus for modifying patterned film
JP2799861B2 (en) * 1987-11-16 1998-09-21 セイコーインスツルメンツ株式会社 Pattern film correction method
US4874947A (en) * 1988-02-26 1989-10-17 Micrion Corporation Focused ion beam imaging and process control
JPH088245B2 (en) * 1990-09-28 1996-01-29 株式会社島津製作所 Focused ion beam etching system
JP3117836B2 (en) * 1993-03-02 2000-12-18 セイコーインスツルメンツ株式会社 Focused ion beam equipment
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US5851413A (en) 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing
US6042738A (en) * 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
US6268608B1 (en) 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
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US6322672B1 (en) 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system

Also Published As

Publication number Publication date
JP2003526919A (en) 2003-09-09
JP5095897B2 (en) 2012-12-12
EP1261752A4 (en) 2006-06-07
WO2001067502A2 (en) 2001-09-13
EP1200988A2 (en) 2002-05-02
JP4728553B2 (en) 2011-07-20
EP1200988B1 (en) 2010-12-22
US6709554B2 (en) 2004-03-23
DE60128659D1 (en) 2007-07-12
WO2001067502A3 (en) 2002-02-21
WO2001068938A1 (en) 2001-09-20
JP2003527629A (en) 2003-09-16
EP1261752B1 (en) 2007-05-30
US6322672B1 (en) 2001-11-27
EP1261752A1 (en) 2002-12-04
US20010027917A1 (en) 2001-10-11
DE60128659T2 (en) 2008-02-07
DE60143691D1 (en) 2011-02-03

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