AU2001282300A1 - System and method for removing particles entrained in an ion beam - Google Patents
System and method for removing particles entrained in an ion beamInfo
- Publication number
- AU2001282300A1 AU2001282300A1 AU2001282300A AU8230001A AU2001282300A1 AU 2001282300 A1 AU2001282300 A1 AU 2001282300A1 AU 2001282300 A AU2001282300 A AU 2001282300A AU 8230001 A AU8230001 A AU 8230001A AU 2001282300 A1 AU2001282300 A1 AU 2001282300A1
- Authority
- AU
- Australia
- Prior art keywords
- ion beam
- removing particles
- particles entrained
- entrained
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000010884 ion-beam technique Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000002245 particle Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/40—Traps for removing or diverting unwanted particles, e.g. negative ions, fringing electrons; Arrangements for velocity or mass selection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31705—Impurity or contaminant control
Landscapes
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
- Particle Accelerators (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/654,381 US6525326B1 (en) | 2000-09-01 | 2000-09-01 | System and method for removing particles entrained in an ion beam |
US09654381 | 2000-09-01 | ||
PCT/GB2001/003760 WO2002019378A2 (en) | 2000-09-01 | 2001-08-21 | System and method for removing particles entrained in an ion beam |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001282300A1 true AU2001282300A1 (en) | 2002-03-13 |
Family
ID=24624630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001282300A Abandoned AU2001282300A1 (en) | 2000-09-01 | 2001-08-21 | System and method for removing particles entrained in an ion beam |
Country Status (9)
Country | Link |
---|---|
US (1) | US6525326B1 (en) |
EP (1) | EP1314182B1 (en) |
JP (1) | JP5168528B2 (en) |
KR (1) | KR100855134B1 (en) |
CN (1) | CN100468604C (en) |
AU (1) | AU2001282300A1 (en) |
DE (1) | DE60136937D1 (en) |
TW (1) | TWI246105B (en) |
WO (1) | WO2002019378A2 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10153723A1 (en) * | 2001-10-31 | 2003-05-15 | Thales Electron Devices Gmbh | Plasma accelerator configuration |
JP3738734B2 (en) * | 2002-02-06 | 2006-01-25 | 日新電機株式会社 | Electrostatic accelerator tube and ion implantation apparatus including the same |
WO2006124075A2 (en) * | 2005-05-16 | 2006-11-23 | Axcelis Technologies, Inc. | System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway |
KR100671158B1 (en) * | 2005-08-11 | 2007-01-17 | 동부일렉트로닉스 주식회사 | Apparatus for removing particles, and implanter including the same |
US7511287B2 (en) * | 2005-09-21 | 2009-03-31 | Axcelis Technologies, Inc. | Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases |
KR20090010067A (en) * | 2006-04-26 | 2009-01-28 | 액셀리스 테크놀러지스, 인크. | Methods and systems for trapping ion beam particles and focusing an ion beam |
JP4660452B2 (en) * | 2006-09-30 | 2011-03-30 | 株式会社フェローテック | Expanded tube plasma generator |
US20080157007A1 (en) * | 2006-12-27 | 2008-07-03 | Varian Semiconductor Equipment Associates, Inc. | Active particle trapping for process control |
EP2129193A1 (en) * | 2008-05-30 | 2009-12-02 | Ion Beam Applications S.A. | A stripping member, a stripping assembly and a method for extracting a particle beam from a cyclotron |
US8242469B2 (en) * | 2009-07-15 | 2012-08-14 | Axcelis Technologies, Inc. | Adjustable louvered plasma electron flood enclosure |
US8669517B2 (en) * | 2011-05-24 | 2014-03-11 | Axcelis Technologies, Inc. | Mass analysis variable exit aperture |
US8963107B2 (en) * | 2012-01-12 | 2015-02-24 | Axcelis Technologies, Inc. | Beam line design to reduce energy contamination |
EP2973663B1 (en) * | 2013-03-15 | 2018-04-18 | Glenn Lane Family Limited Liability Limited Partnership | Adjustable mass resolving aperture |
EP3000789B1 (en) * | 2014-09-15 | 2020-11-04 | Idropan Dell'orto Depuratori S.r.l. | Apparatus and method for purifying a fluid |
JP6347414B2 (en) | 2014-11-04 | 2018-06-27 | 日新イオン機器株式会社 | Mass spectrometry electromagnet |
US9721750B2 (en) * | 2015-07-28 | 2017-08-01 | Varian Semiconductor Equipment Associates, Inc. | Controlling contamination particle trajectory from a beam-line electrostatic element |
CN111261482B (en) * | 2018-11-30 | 2023-02-28 | 夏泰鑫半导体(青岛)有限公司 | Ion implantation device and method for trapping pollutant particles during ion implantation |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4683922A (en) | 1986-01-24 | 1987-08-04 | Allied Corporation | Particle deflector and method of distributing dissimilar particles |
US4800396A (en) * | 1987-07-08 | 1989-01-24 | Hertz Carl H | Compensation method and device for ink droplet deviation of an ink jet |
JPH01265439A (en) * | 1988-04-18 | 1989-10-23 | Fuji Electric Co Ltd | Device for ionic beams |
JP2765890B2 (en) * | 1988-12-09 | 1998-06-18 | 株式会社日立製作所 | Plasma ion source trace element mass spectrometer |
JP2543761B2 (en) * | 1989-03-23 | 1996-10-16 | セイコー電子工業株式会社 | Inductively coupled plasma mass spectrometer |
JP2716518B2 (en) * | 1989-04-21 | 1998-02-18 | 東京エレクトロン株式会社 | Ion implantation apparatus and ion implantation method |
GB9005204D0 (en) * | 1990-03-08 | 1990-05-02 | Superion Ltd | Apparatus and methods relating to scanning ion beams |
US5134299A (en) | 1991-03-13 | 1992-07-28 | Eaton Corporation | Ion beam implantation method and apparatus for particulate control |
JPH05234564A (en) * | 1992-02-19 | 1993-09-10 | Nissin Electric Co Ltd | Ion implanting device |
JP3054302B2 (en) | 1992-12-02 | 2000-06-19 | アプライド マテリアルズ インコーポレイテッド | Plasma emission system to reduce charging on semiconductor wafers during ion implantation |
JPH0654763U (en) * | 1993-01-06 | 1994-07-26 | 日新電機株式会社 | Ion implanter |
US5825035A (en) * | 1993-03-10 | 1998-10-20 | Hitachi, Ltd. | Processing method and apparatus using focused ion beam generating means |
JPH0836100A (en) * | 1994-07-21 | 1996-02-06 | Ulvac Japan Ltd | Ion radiation apparatus |
JPH09139184A (en) * | 1995-11-15 | 1997-05-27 | Nikon Corp | Manufacture of electrostatic deflection unit |
US5656092A (en) | 1995-12-18 | 1997-08-12 | Eaton Corporation | Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter |
JPH09293472A (en) * | 1996-04-26 | 1997-11-11 | Fujitsu Ltd | Charged particle beam exposure device, its exposure method, and its manufacture |
US5693939A (en) * | 1996-07-03 | 1997-12-02 | Purser; Kenneth H. | MeV neutral beam ion implanter |
US6236054B1 (en) * | 1996-09-27 | 2001-05-22 | BARNA ARPáD | Ion source for generating ions of a gas or vapor |
JP2002525820A (en) * | 1998-09-24 | 2002-08-13 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Ion implanter arranged to select neutral ions from ion beam |
-
2000
- 2000-09-01 US US09/654,381 patent/US6525326B1/en not_active Expired - Fee Related
-
2001
- 2001-08-21 CN CNB018184863A patent/CN100468604C/en not_active Expired - Fee Related
- 2001-08-21 EP EP01960909A patent/EP1314182B1/en not_active Expired - Lifetime
- 2001-08-21 WO PCT/GB2001/003760 patent/WO2002019378A2/en active Application Filing
- 2001-08-21 JP JP2002524186A patent/JP5168528B2/en not_active Expired - Lifetime
- 2001-08-21 TW TW090120484A patent/TWI246105B/en not_active IP Right Cessation
- 2001-08-21 DE DE60136937T patent/DE60136937D1/en not_active Expired - Lifetime
- 2001-08-21 KR KR1020037003083A patent/KR100855134B1/en active IP Right Grant
- 2001-08-21 AU AU2001282300A patent/AU2001282300A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR100855134B1 (en) | 2008-08-28 |
JP5168528B2 (en) | 2013-03-21 |
EP1314182B1 (en) | 2008-12-10 |
DE60136937D1 (en) | 2009-01-22 |
KR20030038722A (en) | 2003-05-16 |
US6525326B1 (en) | 2003-02-25 |
JP2004508668A (en) | 2004-03-18 |
TWI246105B (en) | 2005-12-21 |
WO2002019378A2 (en) | 2002-03-07 |
WO2002019378A3 (en) | 2002-05-10 |
CN1473347A (en) | 2004-02-04 |
EP1314182A2 (en) | 2003-05-28 |
CN100468604C (en) | 2009-03-11 |
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