AU2001282300A1 - System and method for removing particles entrained in an ion beam - Google Patents

System and method for removing particles entrained in an ion beam

Info

Publication number
AU2001282300A1
AU2001282300A1 AU2001282300A AU8230001A AU2001282300A1 AU 2001282300 A1 AU2001282300 A1 AU 2001282300A1 AU 2001282300 A AU2001282300 A AU 2001282300A AU 8230001 A AU8230001 A AU 8230001A AU 2001282300 A1 AU2001282300 A1 AU 2001282300A1
Authority
AU
Australia
Prior art keywords
ion beam
removing particles
particles entrained
entrained
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001282300A
Inventor
Victor Maurice Benveniste
Michael Anthony Graf
Robert Day Rathmell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of AU2001282300A1 publication Critical patent/AU2001282300A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/40—Traps for removing or diverting unwanted particles, e.g. negative ions, fringing electrons; Arrangements for velocity or mass selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Particle Accelerators (AREA)
AU2001282300A 2000-09-01 2001-08-21 System and method for removing particles entrained in an ion beam Abandoned AU2001282300A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/654,381 US6525326B1 (en) 2000-09-01 2000-09-01 System and method for removing particles entrained in an ion beam
US09654381 2000-09-01
PCT/GB2001/003760 WO2002019378A2 (en) 2000-09-01 2001-08-21 System and method for removing particles entrained in an ion beam

Publications (1)

Publication Number Publication Date
AU2001282300A1 true AU2001282300A1 (en) 2002-03-13

Family

ID=24624630

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001282300A Abandoned AU2001282300A1 (en) 2000-09-01 2001-08-21 System and method for removing particles entrained in an ion beam

Country Status (9)

Country Link
US (1) US6525326B1 (en)
EP (1) EP1314182B1 (en)
JP (1) JP5168528B2 (en)
KR (1) KR100855134B1 (en)
CN (1) CN100468604C (en)
AU (1) AU2001282300A1 (en)
DE (1) DE60136937D1 (en)
TW (1) TWI246105B (en)
WO (1) WO2002019378A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10153723A1 (en) * 2001-10-31 2003-05-15 Thales Electron Devices Gmbh Plasma accelerator configuration
JP3738734B2 (en) * 2002-02-06 2006-01-25 日新電機株式会社 Electrostatic accelerator tube and ion implantation apparatus including the same
WO2006124075A2 (en) * 2005-05-16 2006-11-23 Axcelis Technologies, Inc. System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway
KR100671158B1 (en) * 2005-08-11 2007-01-17 동부일렉트로닉스 주식회사 Apparatus for removing particles, and implanter including the same
US7511287B2 (en) * 2005-09-21 2009-03-31 Axcelis Technologies, Inc. Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases
KR20090010067A (en) * 2006-04-26 2009-01-28 액셀리스 테크놀러지스, 인크. Methods and systems for trapping ion beam particles and focusing an ion beam
JP4660452B2 (en) * 2006-09-30 2011-03-30 株式会社フェローテック Expanded tube plasma generator
US20080157007A1 (en) * 2006-12-27 2008-07-03 Varian Semiconductor Equipment Associates, Inc. Active particle trapping for process control
EP2129193A1 (en) * 2008-05-30 2009-12-02 Ion Beam Applications S.A. A stripping member, a stripping assembly and a method for extracting a particle beam from a cyclotron
US8242469B2 (en) * 2009-07-15 2012-08-14 Axcelis Technologies, Inc. Adjustable louvered plasma electron flood enclosure
US8669517B2 (en) * 2011-05-24 2014-03-11 Axcelis Technologies, Inc. Mass analysis variable exit aperture
US8963107B2 (en) * 2012-01-12 2015-02-24 Axcelis Technologies, Inc. Beam line design to reduce energy contamination
EP2973663B1 (en) * 2013-03-15 2018-04-18 Glenn Lane Family Limited Liability Limited Partnership Adjustable mass resolving aperture
EP3000789B1 (en) * 2014-09-15 2020-11-04 Idropan Dell'orto Depuratori S.r.l. Apparatus and method for purifying a fluid
JP6347414B2 (en) 2014-11-04 2018-06-27 日新イオン機器株式会社 Mass spectrometry electromagnet
US9721750B2 (en) * 2015-07-28 2017-08-01 Varian Semiconductor Equipment Associates, Inc. Controlling contamination particle trajectory from a beam-line electrostatic element
CN111261482B (en) * 2018-11-30 2023-02-28 夏泰鑫半导体(青岛)有限公司 Ion implantation device and method for trapping pollutant particles during ion implantation

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4683922A (en) 1986-01-24 1987-08-04 Allied Corporation Particle deflector and method of distributing dissimilar particles
US4800396A (en) * 1987-07-08 1989-01-24 Hertz Carl H Compensation method and device for ink droplet deviation of an ink jet
JPH01265439A (en) * 1988-04-18 1989-10-23 Fuji Electric Co Ltd Device for ionic beams
JP2765890B2 (en) * 1988-12-09 1998-06-18 株式会社日立製作所 Plasma ion source trace element mass spectrometer
JP2543761B2 (en) * 1989-03-23 1996-10-16 セイコー電子工業株式会社 Inductively coupled plasma mass spectrometer
JP2716518B2 (en) * 1989-04-21 1998-02-18 東京エレクトロン株式会社 Ion implantation apparatus and ion implantation method
GB9005204D0 (en) * 1990-03-08 1990-05-02 Superion Ltd Apparatus and methods relating to scanning ion beams
US5134299A (en) 1991-03-13 1992-07-28 Eaton Corporation Ion beam implantation method and apparatus for particulate control
JPH05234564A (en) * 1992-02-19 1993-09-10 Nissin Electric Co Ltd Ion implanting device
JP3054302B2 (en) 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド Plasma emission system to reduce charging on semiconductor wafers during ion implantation
JPH0654763U (en) * 1993-01-06 1994-07-26 日新電機株式会社 Ion implanter
US5825035A (en) * 1993-03-10 1998-10-20 Hitachi, Ltd. Processing method and apparatus using focused ion beam generating means
JPH0836100A (en) * 1994-07-21 1996-02-06 Ulvac Japan Ltd Ion radiation apparatus
JPH09139184A (en) * 1995-11-15 1997-05-27 Nikon Corp Manufacture of electrostatic deflection unit
US5656092A (en) 1995-12-18 1997-08-12 Eaton Corporation Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter
JPH09293472A (en) * 1996-04-26 1997-11-11 Fujitsu Ltd Charged particle beam exposure device, its exposure method, and its manufacture
US5693939A (en) * 1996-07-03 1997-12-02 Purser; Kenneth H. MeV neutral beam ion implanter
US6236054B1 (en) * 1996-09-27 2001-05-22 BARNA ARPáD Ion source for generating ions of a gas or vapor
JP2002525820A (en) * 1998-09-24 2002-08-13 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Ion implanter arranged to select neutral ions from ion beam

Also Published As

Publication number Publication date
KR100855134B1 (en) 2008-08-28
JP5168528B2 (en) 2013-03-21
EP1314182B1 (en) 2008-12-10
DE60136937D1 (en) 2009-01-22
KR20030038722A (en) 2003-05-16
US6525326B1 (en) 2003-02-25
JP2004508668A (en) 2004-03-18
TWI246105B (en) 2005-12-21
WO2002019378A2 (en) 2002-03-07
WO2002019378A3 (en) 2002-05-10
CN1473347A (en) 2004-02-04
EP1314182A2 (en) 2003-05-28
CN100468604C (en) 2009-03-11

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