AU2001282298A1 - Electrostatic trap for particles entrained in an ion beam - Google Patents

Electrostatic trap for particles entrained in an ion beam

Info

Publication number
AU2001282298A1
AU2001282298A1 AU2001282298A AU8229801A AU2001282298A1 AU 2001282298 A1 AU2001282298 A1 AU 2001282298A1 AU 2001282298 A AU2001282298 A AU 2001282298A AU 8229801 A AU8229801 A AU 8229801A AU 2001282298 A1 AU2001282298 A1 AU 2001282298A1
Authority
AU
Australia
Prior art keywords
ion beam
particles entrained
electrostatic trap
trap
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001282298A
Inventor
Victor Maurice Benveniste
Michael Anthony Graf
Robert Day Rathmell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of AU2001282298A1 publication Critical patent/AU2001282298A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/40—Traps for removing or diverting unwanted particles, e.g. negative ions, fringing electrons; Arrangements for velocity or mass selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31705—Impurity or contaminant control

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Elimination Of Static Electricity (AREA)
  • Electron Sources, Ion Sources (AREA)
AU2001282298A 2000-09-01 2001-08-21 Electrostatic trap for particles entrained in an ion beam Abandoned AU2001282298A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/654,380 US6534775B1 (en) 2000-09-01 2000-09-01 Electrostatic trap for particles entrained in an ion beam
US09654380 2000-09-01
PCT/GB2001/003758 WO2002019377A2 (en) 2000-09-01 2001-08-21 Electrostatic trap for particles entrained in an ion beam

Publications (1)

Publication Number Publication Date
AU2001282298A1 true AU2001282298A1 (en) 2002-03-13

Family

ID=24624625

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001282298A Abandoned AU2001282298A1 (en) 2000-09-01 2001-08-21 Electrostatic trap for particles entrained in an ion beam

Country Status (9)

Country Link
US (1) US6534775B1 (en)
EP (1) EP1314181B1 (en)
JP (1) JP5333708B2 (en)
KR (1) KR100855135B1 (en)
CN (1) CN1311509C (en)
AU (1) AU2001282298A1 (en)
DE (1) DE60136935D1 (en)
TW (1) TWI242788B (en)
WO (1) WO2002019377A2 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4252237B2 (en) * 2000-12-06 2009-04-08 株式会社アルバック Ion implantation apparatus and ion implantation method
US7087913B2 (en) * 2003-10-17 2006-08-08 Applied Materials, Inc. Ion implanter electrodes
KR100510559B1 (en) * 2003-12-30 2005-08-26 삼성전자주식회사 Manipulator assembly in ion implanter
US7317606B2 (en) * 2004-12-10 2008-01-08 Applied Materials, Israel, Ltd. Particle trap for electrostatic chuck
EP1891657A2 (en) * 2005-06-03 2008-02-27 Axcelis Technologies, Inc. Beam stop and beam tuning methods
US7511287B2 (en) * 2005-09-21 2009-03-31 Axcelis Technologies, Inc. Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases
TWI435378B (en) * 2006-04-26 2014-04-21 Axcelis Tech Inc Dose uniformity correction technique
WO2007127086A2 (en) * 2006-04-26 2007-11-08 Axcelis Technologies, Inc. Methods and systems for trapping ion beam particles and focusing an ion beam
US7507978B2 (en) * 2006-09-29 2009-03-24 Axcelis Technologies, Inc. Beam line architecture for ion implanter
GB2442485B (en) 2006-10-03 2008-12-10 Thermo Electron Corp X-ray photoelectron spectroscopy analysis system for surface analysis and method therefor
US7750320B2 (en) * 2006-12-22 2010-07-06 Axcelis Technologies, Inc. System and method for two-dimensional beam scan across a workpiece of an ion implanter
US8084757B2 (en) * 2008-01-17 2011-12-27 Applied Materials, Inc. Contamination prevention in extreme ultraviolet lithography
US7767986B2 (en) * 2008-06-20 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
US20100065761A1 (en) * 2008-09-17 2010-03-18 Axcelis Technologies, Inc. Adjustable deflection optics for ion implantation
US8461030B2 (en) * 2009-11-17 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controllably implanting workpieces
RU2619923C2 (en) * 2012-09-04 2017-05-22 Трай Альфа Энерджи, Инк. Neutral particle beam injector based on negative ions
US9591740B2 (en) 2013-03-08 2017-03-07 Tri Alpha Energy, Inc. Negative ion-based neutral beam injector
CN103681205A (en) * 2013-12-04 2014-03-26 中国科学院大连化学物理研究所 Electrostatic lens device used for electron acceleration
US9721750B2 (en) * 2015-07-28 2017-08-01 Varian Semiconductor Equipment Associates, Inc. Controlling contamination particle trajectory from a beam-line electrostatic element
CN110431650B (en) * 2017-03-21 2022-03-01 瓦里安半导体设备公司 Ion implantation system and method thereof, and conductive beam optics of electrostatic filter
US10504682B2 (en) 2018-02-21 2019-12-10 Varian Semiconductor Equipment Associates, Inc. Conductive beam optic containing internal heating element
US10714301B1 (en) 2018-02-21 2020-07-14 Varian Semiconductor Equipment Associates, Inc. Conductive beam optics for reducing particles in ion implanter
US11087956B2 (en) * 2018-06-29 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Detection systems in semiconductor metrology tools
JP7132828B2 (en) * 2018-11-13 2022-09-07 住友重機械イオンテクノロジー株式会社 Ion implanter and beam parker
CN113414369B (en) * 2021-08-23 2021-11-09 江苏中科云控智能工业装备有限公司 Multi-manipulator collaborative deburring device capable of automatically distributing machining positions

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611029A (en) * 1969-09-09 1971-10-05 Atomic Energy Commission Source for highly stripped ions
US4683922A (en) 1986-01-24 1987-08-04 Allied Corporation Particle deflector and method of distributing dissimilar particles
JPH01265439A (en) * 1988-04-18 1989-10-23 Fuji Electric Co Ltd Device for ionic beams
JP2716518B2 (en) * 1989-04-21 1998-02-18 東京エレクトロン株式会社 Ion implantation apparatus and ion implantation method
US5134299A (en) 1991-03-13 1992-07-28 Eaton Corporation Ion beam implantation method and apparatus for particulate control
US5218210A (en) * 1992-02-18 1993-06-08 Eaton Corporation Broad beam flux density control
JPH05234564A (en) * 1992-02-19 1993-09-10 Nissin Electric Co Ltd Ion implanting device
JPH064493A (en) * 1992-03-31 1994-01-14 Internatl Business Mach Corp <Ibm> Method for selectively serializing access for common object and method for centralizing serialized code in operating syste
JP3054302B2 (en) 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド Plasma emission system to reduce charging on semiconductor wafers during ion implantation
JPH06243815A (en) * 1993-02-18 1994-09-02 Nissin Electric Co Ltd Ion implanter
GB2344214B (en) * 1995-11-08 2000-08-09 Applied Materials Inc An ion implanter with improved beam definition
GB2343546B (en) * 1995-11-08 2000-06-21 Applied Materials Inc An ion implanter with deceleration lens assembly
US5656092A (en) 1995-12-18 1997-08-12 Eaton Corporation Apparatus for capturing and removing contaminant particles from an interior region of an ion implanter
JP3862344B2 (en) * 1997-02-26 2006-12-27 株式会社日立製作所 Electrostatic lens
JP2000133197A (en) * 1998-10-30 2000-05-12 Applied Materials Inc Ion implanting device

Also Published As

Publication number Publication date
WO2002019377A3 (en) 2002-05-10
JP2004508667A (en) 2004-03-18
CN1311509C (en) 2007-04-18
WO2002019377A2 (en) 2002-03-07
US6534775B1 (en) 2003-03-18
TWI242788B (en) 2005-11-01
EP1314181A2 (en) 2003-05-28
KR100855135B1 (en) 2008-08-28
CN1473346A (en) 2004-02-04
DE60136935D1 (en) 2009-01-22
EP1314181B1 (en) 2008-12-10
KR20030064748A (en) 2003-08-02
JP5333708B2 (en) 2013-11-06

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