US7750320B2 - System and method for two-dimensional beam scan across a workpiece of an ion implanter - Google Patents
System and method for two-dimensional beam scan across a workpiece of an ion implanter Download PDFInfo
- Publication number
- US7750320B2 US7750320B2 US11/644,623 US64462306A US7750320B2 US 7750320 B2 US7750320 B2 US 7750320B2 US 64462306 A US64462306 A US 64462306A US 7750320 B2 US7750320 B2 US 7750320B2
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- US
- United States
- Prior art keywords
- ion beam
- sweeping
- component
- workpiece
- scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/024—Moving components not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0456—Supports
- H01J2237/0458—Supports movable, i.e. for changing between differently sized apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
- H01J2237/057—Energy or mass filtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
- H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
- H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30455—Correction during exposure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
- H01J2237/30483—Scanning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31705—Impurity or contaminant control
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (20)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/644,623 US7750320B2 (en) | 2006-12-22 | 2006-12-22 | System and method for two-dimensional beam scan across a workpiece of an ion implanter |
JP2007323610A JP5257576B2 (en) | 2006-12-22 | 2007-12-14 | System and method for implanting ions into a workpiece |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/644,623 US7750320B2 (en) | 2006-12-22 | 2006-12-22 | System and method for two-dimensional beam scan across a workpiece of an ion implanter |
Publications (2)
Publication Number | Publication Date |
---|---|
US20080149857A1 US20080149857A1 (en) | 2008-06-26 |
US7750320B2 true US7750320B2 (en) | 2010-07-06 |
Family
ID=39541504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/644,623 Active 2029-02-06 US7750320B2 (en) | 2006-12-22 | 2006-12-22 | System and method for two-dimensional beam scan across a workpiece of an ion implanter |
Country Status (2)
Country | Link |
---|---|
US (1) | US7750320B2 (en) |
JP (1) | JP5257576B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110220144A1 (en) * | 2010-03-10 | 2011-09-15 | Varian Semiconductor Equipment Associates, Inc. | Cleaning of an extraction aperture of an ion source |
US20120213950A1 (en) * | 2009-09-14 | 2012-08-23 | Mueller Markus Robert | Device and process for positioning individual particles on a substrate |
US20120228515A1 (en) * | 2011-03-11 | 2012-09-13 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for maskless patterned implantion |
CN103477416A (en) * | 2011-03-31 | 2013-12-25 | 艾克塞利斯科技公司 | Improved uniformity of a scanned ion beam |
US20230199717A1 (en) * | 2017-02-02 | 2023-06-22 | Ipla Holdings Inc. | Apparatuses for transmission of paging blocks in swept downlink beams |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8987691B2 (en) | 2009-09-03 | 2015-03-24 | Advanced Ion Beam Technology, Inc. | Ion implanter and ion implant method thereof |
US20110049383A1 (en) * | 2009-09-03 | 2011-03-03 | Advanced Ion Beam Technology, Inc. | Ion implanter and ion implant method thereof |
CN102194637B (en) * | 2010-03-18 | 2015-03-18 | 上海凯世通半导体有限公司 | Ion implantation system and method |
Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4593200A (en) | 1984-03-06 | 1986-06-03 | Mcguire Iii Edward L | Scan controller for ion implanter device |
US4736107A (en) | 1986-09-24 | 1988-04-05 | Eaton Corporation | Ion beam implanter scan control system |
US4980562A (en) | 1986-04-09 | 1990-12-25 | Varian Associates, Inc. | Method and apparatus for high efficiency scanning in an ion implanter |
US5160846A (en) | 1990-10-03 | 1992-11-03 | Eaton Corporation | Method and apparatus for reducing tilt angle variations in an ion implanter |
US5177366A (en) | 1992-03-06 | 1993-01-05 | Eaton Corporation | Ion beam implanter for providing cross plane focusing |
US5293216A (en) | 1990-12-31 | 1994-03-08 | Texas Instruments Incorporated | Sensor for semiconductor device manufacturing process control |
US5311028A (en) | 1990-08-29 | 1994-05-10 | Nissin Electric Co., Ltd. | System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions |
US5432352A (en) | 1993-09-20 | 1995-07-11 | Eaton Corporation | Ion beam scan control |
US5481116A (en) | 1994-06-10 | 1996-01-02 | Ibis Technology Corporation | Magnetic system and method for uniformly scanning heavy ion beams |
US5719495A (en) | 1990-12-31 | 1998-02-17 | Texas Instruments Incorporated | Apparatus for semiconductor device fabrication diagnosis and prognosis |
US6414329B1 (en) | 2000-07-25 | 2002-07-02 | Axcelis Technologies, Inc. | Method and system for microwave excitation of plasma in an ion beam guide |
US6521895B1 (en) | 1999-10-22 | 2003-02-18 | Varian Semiconductor Equipment Associates, Inc. | Wide dynamic range ion beam scanners |
US6534775B1 (en) | 2000-09-01 | 2003-03-18 | Axcelis Technologies, Inc. | Electrostatic trap for particles entrained in an ion beam |
US20030197133A1 (en) | 2002-04-23 | 2003-10-23 | Turner Norman L. | Method and apparatus for scanning a workpiece in a vacuum chamber |
US20030224541A1 (en) | 2002-05-29 | 2003-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of monitoring high tilt angle of medium current implant |
US20040126946A1 (en) | 2002-12-30 | 2004-07-01 | Kim Bong Soo | Method for forming transistor of semiconductor device |
US6777695B2 (en) * | 2002-07-12 | 2004-08-17 | Varian Semiconductors Equipment Associates, Inc. | Rotating beam ion implanter |
US6777696B1 (en) | 2003-02-21 | 2004-08-17 | Axcelis Technologies, Inc. | Deflecting acceleration/deceleration gap |
US6881966B2 (en) | 2003-05-15 | 2005-04-19 | Axcelis Technologies, Inc. | Hybrid magnetic/electrostatic deflector for ion implantation systems |
US6908836B2 (en) | 2002-09-23 | 2005-06-21 | Applied Materials, Inc. | Method of implanting a substrate and an ion implanter for performing the method |
US20050280082A1 (en) | 2004-01-30 | 2005-12-22 | Yisuo Li | Semiconductor device layout and channeling implant process |
US6992310B1 (en) | 2004-08-13 | 2006-01-31 | Axcelis Technologies, Inc. | Scanning systems and methods for providing ions from an ion beam to a workpiece |
US20060113495A1 (en) | 2004-05-18 | 2006-06-01 | Jiong Chen | Apparatus and methods for ion beam implantation |
US7429743B2 (en) * | 2004-11-30 | 2008-09-30 | Sen Corporation | Irradiation system ion beam and method to enhance accuracy of irradiation |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2706471B2 (en) * | 1987-09-30 | 1998-01-28 | 日本真空技術株式会社 | Parallel sweep device for electrostatic sweep type ion implanter |
JPH02162641A (en) * | 1988-12-15 | 1990-06-22 | Nissin Electric Co Ltd | Ion implanting equipment |
JPH07209498A (en) * | 1994-01-13 | 1995-08-11 | Ebara Corp | Charged particle emitting device |
JPH1083785A (en) * | 1996-09-09 | 1998-03-31 | Nissin Electric Co Ltd | Ion implantation device |
US6219895B1 (en) * | 2000-06-27 | 2001-04-24 | Davenport Industries, Llc | Machine tool with servo drive mechanism |
JP2005285518A (en) * | 2004-03-29 | 2005-10-13 | Toshiba Corp | Ion injecting device and ion injecting method |
-
2006
- 2006-12-22 US US11/644,623 patent/US7750320B2/en active Active
-
2007
- 2007-12-14 JP JP2007323610A patent/JP5257576B2/en active Active
Patent Citations (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4593200A (en) | 1984-03-06 | 1986-06-03 | Mcguire Iii Edward L | Scan controller for ion implanter device |
US4980562A (en) | 1986-04-09 | 1990-12-25 | Varian Associates, Inc. | Method and apparatus for high efficiency scanning in an ion implanter |
US4736107A (en) | 1986-09-24 | 1988-04-05 | Eaton Corporation | Ion beam implanter scan control system |
US5311028A (en) | 1990-08-29 | 1994-05-10 | Nissin Electric Co., Ltd. | System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions |
US5483077A (en) | 1990-08-29 | 1996-01-09 | Nissin Electric Co., Ltd. | System and method for magnetic scanning, accelerating, and implanting of an ion beam |
US5393984A (en) | 1990-08-29 | 1995-02-28 | Nissin Electric Co., Inc. | Magnetic deflection system for ion beam implanters |
US5160846A (en) | 1990-10-03 | 1992-11-03 | Eaton Corporation | Method and apparatus for reducing tilt angle variations in an ion implanter |
US5293216A (en) | 1990-12-31 | 1994-03-08 | Texas Instruments Incorporated | Sensor for semiconductor device manufacturing process control |
US5719495A (en) | 1990-12-31 | 1998-02-17 | Texas Instruments Incorporated | Apparatus for semiconductor device fabrication diagnosis and prognosis |
US5177366A (en) | 1992-03-06 | 1993-01-05 | Eaton Corporation | Ion beam implanter for providing cross plane focusing |
US5432352A (en) | 1993-09-20 | 1995-07-11 | Eaton Corporation | Ion beam scan control |
US5481116A (en) | 1994-06-10 | 1996-01-02 | Ibis Technology Corporation | Magnetic system and method for uniformly scanning heavy ion beams |
US6521895B1 (en) | 1999-10-22 | 2003-02-18 | Varian Semiconductor Equipment Associates, Inc. | Wide dynamic range ion beam scanners |
US6414329B1 (en) | 2000-07-25 | 2002-07-02 | Axcelis Technologies, Inc. | Method and system for microwave excitation of plasma in an ion beam guide |
US6534775B1 (en) | 2000-09-01 | 2003-03-18 | Axcelis Technologies, Inc. | Electrostatic trap for particles entrained in an ion beam |
US20030197133A1 (en) | 2002-04-23 | 2003-10-23 | Turner Norman L. | Method and apparatus for scanning a workpiece in a vacuum chamber |
US20030224541A1 (en) | 2002-05-29 | 2003-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of monitoring high tilt angle of medium current implant |
US6777695B2 (en) * | 2002-07-12 | 2004-08-17 | Varian Semiconductors Equipment Associates, Inc. | Rotating beam ion implanter |
US6908836B2 (en) | 2002-09-23 | 2005-06-21 | Applied Materials, Inc. | Method of implanting a substrate and an ion implanter for performing the method |
US20040126946A1 (en) | 2002-12-30 | 2004-07-01 | Kim Bong Soo | Method for forming transistor of semiconductor device |
US6777696B1 (en) | 2003-02-21 | 2004-08-17 | Axcelis Technologies, Inc. | Deflecting acceleration/deceleration gap |
US6881966B2 (en) | 2003-05-15 | 2005-04-19 | Axcelis Technologies, Inc. | Hybrid magnetic/electrostatic deflector for ion implantation systems |
US20050280082A1 (en) | 2004-01-30 | 2005-12-22 | Yisuo Li | Semiconductor device layout and channeling implant process |
US20060113495A1 (en) | 2004-05-18 | 2006-06-01 | Jiong Chen | Apparatus and methods for ion beam implantation |
US6992310B1 (en) | 2004-08-13 | 2006-01-31 | Axcelis Technologies, Inc. | Scanning systems and methods for providing ions from an ion beam to a workpiece |
US7429743B2 (en) * | 2004-11-30 | 2008-09-30 | Sen Corporation | Irradiation system ion beam and method to enhance accuracy of irradiation |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120213950A1 (en) * | 2009-09-14 | 2012-08-23 | Mueller Markus Robert | Device and process for positioning individual particles on a substrate |
US9352964B2 (en) * | 2009-09-14 | 2016-05-31 | Markus Robert MUELLER | Device and process for positioning individual particles on a substrate |
US20110220144A1 (en) * | 2010-03-10 | 2011-09-15 | Varian Semiconductor Equipment Associates, Inc. | Cleaning of an extraction aperture of an ion source |
US8455839B2 (en) * | 2010-03-10 | 2013-06-04 | Varian Semiconductor Equipment Associates, Inc. | Cleaning of an extraction aperture of an ion source |
US20120228515A1 (en) * | 2011-03-11 | 2012-09-13 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for maskless patterned implantion |
US8907307B2 (en) * | 2011-03-11 | 2014-12-09 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for maskless patterned implantation |
CN103477416A (en) * | 2011-03-31 | 2013-12-25 | 艾克塞利斯科技公司 | Improved uniformity of a scanned ion beam |
CN103477416B (en) * | 2011-03-31 | 2016-03-16 | 艾克塞利斯科技公司 | The improvement uniformity of ion beam |
US20230199717A1 (en) * | 2017-02-02 | 2023-06-22 | Ipla Holdings Inc. | Apparatuses for transmission of paging blocks in swept downlink beams |
Also Published As
Publication number | Publication date |
---|---|
US20080149857A1 (en) | 2008-06-26 |
JP5257576B2 (en) | 2013-08-07 |
JP2008159585A (en) | 2008-07-10 |
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Legal Events
Date | Code | Title | Description |
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AS | Assignment |
Owner name: AXCELIS TECHNOLOGIES, INC., MASSACHUSETTS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FERRARA, JOSEPH;VANDERBERG, BO H.;GRAF, MICHAEL A.;REEL/FRAME:018729/0080;SIGNING DATES FROM 20061220 TO 20061222 Owner name: AXCELIS TECHNOLOGIES, INC., MASSACHUSETTS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FERRARA, JOSEPH;VANDERBERG, BO H.;GRAF, MICHAEL A.;SIGNING DATES FROM 20061220 TO 20061222;REEL/FRAME:018729/0080 |
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Owner name: SILICON VALLEY BANK, CALIFORNIA Free format text: SECURITY AGREEMENT;ASSIGNOR:AXCELIS TECHNOLOGIES, INC.;REEL/FRAME:020986/0143 Effective date: 20080423 Owner name: SILICON VALLEY BANK,CALIFORNIA Free format text: SECURITY AGREEMENT;ASSIGNOR:AXCELIS TECHNOLOGIES, INC.;REEL/FRAME:020986/0143 Effective date: 20080423 |
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Owner name: SEN CORPORATION, JAPAN Free format text: CONSENT AND LICENSE AGREEMENT;ASSIGNOR:AXCELIS TECHNOLOGIES, INC.;REEL/FRAME:022562/0758 Effective date: 20090330 Owner name: SEN CORPORATION,JAPAN Free format text: CONSENT AND LICENSE AGREEMENT;ASSIGNOR:AXCELIS TECHNOLOGIES, INC.;REEL/FRAME:022562/0758 Effective date: 20090330 |
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