CN102194637B - Ion implantation system and method - Google Patents
Ion implantation system and method Download PDFInfo
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- CN102194637B CN102194637B CN201010157013.1A CN201010157013A CN102194637B CN 102194637 B CN102194637 B CN 102194637B CN 201010157013 A CN201010157013 A CN 201010157013A CN 102194637 B CN102194637 B CN 102194637B
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Abstract
The invention discloses an ion implantation system. The system comprises an ion source and an extractor, wherein a mass analyzing magnet, a correcting magnet and a workpiece scanning device are arranged on the transmission path of the ion beams in sequence. The system also comprises a scanning magnet arranged on the upper stream of the correcting magnet and a beam current measuring device arranged in the implantation position, wherein the scanning magnet is used for scanning the passing ion beams so as to ensure distribution of the ion beams which are arranged in the implantation position and in the preset energy range in the ion beam scanning direction to cover the workpiece; and the beam current measuring device is used for measuring the intensity and angle distribution of the beam current in the scanning direction of the ion beams. The invention also discloses an ion implantation method realized by the ion implantation system. The system and the method have the following positive effects: accurate control of the implantation angle uniformity and implantation intensity uniformity of the ion beams can be realized; the production cost is lowered; and the process flows are simplified.
Description
Technical field
The present invention relates to a kind of ion implant systems, particularly relate to a kind of ion implant systems and method.
Background technology
Atom or molecule that ion implantation is used for being usually referred to as impurity introduce target substrate, thus change the performance of substrate material.A kind of common process process that ion implantation does not still use in modern integrated circuits manufacturing industry, it can also be used for the manufacture of the optics such as flat-panel screens or display device, and the thin film deposition that thickness is controlled, surface property is predetermined etc.
Under some application scenario, particularly when using the even larger substrate of the wafer of 300mm or 450mm as injection target, ribbon ion beam is preferably adopted to inject.The ion implant systems that existing employing ribbon ion beam carries out injecting is shown in Fig. 1 and Fig. 2.In the ion implant systems of Fig. 1, an ion source and an ejector 1 ' generate the ion beam dispersed, and this ion beam dispersed, after the selection through a mass analyzing magmet 2 ', is calibrated by a magnetic lens 3 '.In the ion implant systems of Fig. 2, the divergent ion beam generated by an ion source and an ejector is through a mass analyzing magmet 2 " selection after, by two calibrators 31 ", 32 " calibration.So-called ribbon ion beam refers to, the depth-width ratio in this ion beam cross-sectional face is very large, namely the size of a certain dimension (being longitudinal direction in fig. 1 and 2) of its cross section is more much bigger than the size of other dimension, to such an extent as to can cover whole workpiece to be processed in such as longitudinal direction in the distribution of injecting this ion beam of station place.Thus, in above-mentioned two kinds of ion implant systems, only the workpiece to be processed such as silicon wafer or flat-panel screens need be carried out one-dimensional movement or scanning along such as horizontal direction, just can complete the ion implantation process to its whole surface.But in order to obtain uniform ion implantation dosage on workpiece, the intensity distributions of this ribbon ion beam in such as longitudinal direction must be adjusted to certain uniformity, and this is usually by moving to a part of ion beam density regions to realize from high-density region.But although above-mentioned method of adjustment can ensure the uniformity that ion beam intensity distributes, but have lost the angular distribution uniformity of ion beam, this is disadvantageous for the ic manufacturing process of advanced person.
Utilize the ion implant systems shown in Fig. 2 can also carry out restrainting the injection of plaque-like ion beam, this injection mode as shown in Figure 3, the divergent ion beam generated by an ion source and an ejector is through a mass analyzing magmet 2 " selection after, by two calibrators 31 ", 32 " calibration; With the situation shown in Fig. 2 unlike, now to two calibrators 31 ", 32 " carry out different optimum configurations, make when ion beam arrives injection station, the size of its cross section is less than the size of workpiece, namely this ion beam will form a branch of spot on workpiece, then by workpiece being carried out level, vertical two-dimensional scan, back and forth ion implantation is completed through this ion beam.
Owing to there is complicated interaction between ion beam and the magnetic field applied in order to the density that adjusts ion beam and even angle degree, therefore above-mentioned all ion injection methods all can produce serious technological problems, and cause the cost of whole ion implant systems to increase thus, and have to adopt more complicated technological process to realize the process requirements of ion implantation.Especially, because the beam transmission path of said system is long, under the injection condition of low-yield, high line, the uniformity controlling to ion beam and the control to the angular deviation in ion beam just can become more and more difficult.
In addition, wish all very much in many application scenarios when ion energy is low to moderate 200eV, also can obtain the line that intensity is several milliamperes.The highest Bunch current generally obtains by slowing down to ion beam before arrival target target.But, this practice also exists following defect: retarding potential must cause the change of ion trajectory, thus cause the expansion of angular error, therefore, when employing is injected through the ion beam of overscanning, can make to become more difficult to the angle uniformity of ion beam and the control of dose uniformity.
Therefore, above-mentioned various ion implant systems be not all suitable for when adopt high line, high dose and there is the ion beam of angle uniformity fill order's wafer process (i.e. single treatment one wafer).
Summary of the invention
The technical problem to be solved in the present invention is the dose uniformity and the angle uniformity that are difficult to ensure line in order to overcome ion implantation mode of the prior art simultaneously, and cost is higher, the defect of complex process, there is provided a kind of dose uniformity and the angle uniformity that can realize line, and cost is lower, the ion implant systems of concise in technology and method simultaneously.
The present invention solves above-mentioned technical problem by following technical proposals: a kind of ion implant systems, and its feature is, it comprises: an ion source and an ejector, and this ejector is used for drawing from this ion source the ion beam assembled; The transmission path of this ion beam is provided with successively: a mass analyzing magmet, for selecting the ion beam within the scope of a default charge-mass ratio from this ion beam; One correcting magnet, for calibrating the ion beam within the scope of this default charge-mass ratio; One workpiece scanning means, passes ion beam within the scope of this default charge-mass ratio to carry out ion implantation for making workpiece; This system also comprises: a scanning magnet being located at this correcting magnet upstream, for the ion beam scanned through, this workpiece is covered to make the distribution of ion beam on ion-beam scanning direction within the scope of this preset energy at injection station place, wherein, the sweep speed of ion beam is much larger than the sweep speed of workpiece, and the scanning direction of the scanning direction of ion beam and workpiece is perpendicular; One is located at the beam current measurement device injecting station place, for measuring intensity distributions and the angular distribution of line on the scanning direction of ion beam.
Preferably, this scanning magnet is located on the beam transmission path between this ejector and this mass analyzing magmet.
Preferably, this scanning magnet is located on the beam transmission path between this mass analyzing magmet and this correcting magnet.
Preferably, this ejector is provided so that the ion beam of drawing from this ion source is assembled in the non-diverging plane of this mass analyzing magmet.
Preferably, this scanning magnet is used for the non-diverging plane interscan ion beam at this mass analyzing magmet, and make the ion beam within the scope of this default charge-mass ratio cover this workpiece on the non-diverging direction being distributed in this mass analyzing magmet at this workpiece place, this workpiece scanning means for making workpiece to carry out the mode of one-dimensional movement or scanning perpendicular to the scanning direction of the ion beam within the scope of this default charge-mass ratio, through the ion beam within the scope of this default charge-mass ratio to carry out ion implantation.
Preferably, this beam current measurement device is also for feeding back to this scanning magnet and this correcting magnet by measurement data.
Preferably, this ion implant systems also comprises the speed change gear be located between this correcting magnet and this workpiece scanning means, for making the ion beam acceleration or deceleration within the scope of this default charge-mass ratio, and energy filtering is carried out to the ion beam within the scope of this default charge-mass ratio simultaneously.
Another technical scheme of the present invention is: a kind of ion injection method utilizing above-mentioned ion implant systems to realize, its feature is, it comprises the following steps: S
1, utilize this ejector from this ion source draw assemble ion beam; S
2, the ion beam that utilizes this mass analyzing magmet to select within the scope of this default charge-mass ratio from this ion beam; S
3, utilize this correcting magnet to calibrate ion beam within the scope of this default charge-mass ratio; S
4, utilize this workpiece scanning means to make workpiece pass ion beam within the scope of this default charge-mass ratio to carry out ion implantation.
Preferably, in step S
1with step S
2between or in step S
2with step S
3between, utilize this scanning magnet at the non-diverging plane interscan ion beam of this mass analyzing magmet, and make the ion beam within the scope of this default charge-mass ratio cover this workpiece, in step S on the non-diverging direction being distributed in this mass analyzing magmet at this workpiece place
4in this workpiece scanning means make workpiece to carry out the mode of one-dimensional movement or scanning perpendicular to the scanning direction of the ion beam within the scope of this default charge-mass ratio, through the ion beam within the scope of this default charge-mass ratio to carry out ion implantation.
Preferably, this ion implant systems also comprises the speed change gear be located between this correcting magnet and this workpiece scanning means, in step S
3with step S
4between, utilize the ion beam acceleration or deceleration that this speed change gear makes within the scope of this default charge-mass ratio, and energy filtering is carried out to the ion beam within the scope of this default charge-mass ratio simultaneously.
Preferably, in step S
3with step S
4between, utilize intensity distributions and the angular distribution of the scanning direction of the ion beam of this beam current measurement device within the scope of this default charge-mass ratio being measured line, and measurement data is fed back to this scanning magnet and this correcting magnet, by the adjustment to this scanning magnet and this correcting magnet, intensity distributions and angular distribution that the ion beam within the scope of this default charge-mass ratio is injecting station place is made to meet preset requirement.
Positive progressive effect of the present invention is: the present invention can improve the control of angle uniformity to ion implantation and dose uniformity, realize the angular distribution of ion beam and the accurate adjustment of intensity distributions, guarantee that the angle uniformity of line can't incur loss thus when obtaining line dose uniformity, therefore can improve the injection efficiency of ion implant systems in larger ion energy range (hundreds of eV to tens keV), and obtain good processing quality; Simultaneously, the present invention also improves the labyrinth of existing ion implant systems, not only reduce production cost, simplify technological process, also have benefited from the simplicity in beam transmission path, further increase the control ability of dose uniformity to ion beam and angle uniformity.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that a kind of existing employing ribbon ion beam carries out the ion implant systems injected.
Fig. 2 is the schematic diagram that another kind of existing employing ribbon ion beam carries out the ion implant systems injected.
Fig. 3 is a kind of existing schematic diagram adopting bundle plaque-like ion beam to carry out the ion implant systems injected.
Fig. 4 is the schematic diagram of this ion implant systems of the present invention when running on first mode.
Fig. 5 is the schematic diagram of this ion implant systems of the present invention when running on the second pattern.
Fig. 6 is the schematic diagram of one in this ion implant systems of the present invention as Panofsky (Panofsky) magnet of correcting magnet.
Fig. 7 a is the end view of one in this ion implant systems of the present invention as the shaft-like quadrupole magnet of correcting magnet.
Fig. 7 b is the vertical view of the shaft-like quadrupole magnet in Fig. 7 a.
Fig. 8 is the schematic diagram of the workpiece scanning means in this ion implant systems of the present invention.
Embodiment
Present pre-ferred embodiments is provided, to describe technical scheme of the present invention in detail below in conjunction with accompanying drawing.
As shown in Figure 4, this ion implant systems of the present invention comprises an ion source and an ejector 1, this ejector is used for drawing from this ion source the ion beam assembled, and wherein this ejector has the extraction electrode that is concave, is focused once leaving this extraction electrode to make ion beam.In the downstream of this ion source and ejector 1, the transmission path of this ion beam is provided with successively: a mass analyzing magmet 3, for selecting the ion within the scope of a default charge-mass ratio from this ion beam, with allow those ions by one quality choice seam follow-up resume defeated, those ions exceeding this default charge-mass ratio scope are then stopped, wherein this mass analyzing magmet 3 can adopt a such as United States Patent (USP) 5,736,743 and 6, Window frame-type (window frame) dipolar magnet that the pole span described in 403 is very large, one correcting magnet 4, for calibrating accurately the ion beam within the scope of this default charge-mass ratio, to make when this ion beam finally arrives injection station, its intensity distributions and angular distribution all can meet default injection requirement, namely by the current value of its different coil of setting, the implant angle of line in the non-diverging dimension of this mass analyzing magmet 3 and in the dimension perpendicular with this dimension is adjusted, wherein this correcting magnet 4 can adopt quadrupole magnet to realize, such as one Panofsky magnet as shown in Figure 6, or just like the shaft-like quadrupole magnet shown in Fig. 7 a and Fig. 7 b, one workpiece scanning means, for making workpiece 5 through the ion beam within the scope of this default charge-mass ratio to carry out ion implantation to it, wherein this workpiece 5 can be such as semiconductor wafer or a flat-panel monitor, this workpiece scanning means then can adopt existing apparatus to realize, such as one workpiece scanning means as shown in Figure 8.In the diagram, the non-diverging plane of this mass analyzing magmet 3 is longitudinally, correspondingly, is set to by this ejector: the ion beam of being drawn from this ion source by it is assembled in fore-and-aft plane.In transmitting procedure, originally the ion beam being converged state can continue to focus in the non-diverging plane of this mass analyzing magmet 3, thus when ion beam arrives injection station, the distribution of its cross section has been less than the size of this workpiece 5, and namely this ion beam will form the profile of a branch of plaque-like at injection station place.
As shown in Figure 5, this ion implant systems can also comprise the scanning magnet 2 being located at this correcting magnet 4 upstream, namely this scanning magnet 2 both can be located on the beam transmission path between this ejector and this mass analyzing magmet 3, also can be located on the beam transmission path between this mass analyzing magmet 3 and this correcting magnet 4, shown in Fig. 5 is situation about being located at by this scanning magnet 2 between this ejector and this mass analyzing magmet 3, wherein, this scanning magnet 2 can adopt dipolar magnet to realize.This scanning magnet 2 for non-diverging plane (fore-and-aft plane in Fig. 5) interscan at this mass analyzing magmet 3 from the ion beam of this ejector, ion beam is made to produce certain scan shift in the fore-and-aft plane of Fig. 5, this moment shown in Fig. 5, ion beam is by upward displacement, and the ion beam being shifted in other angle in all the other moment is not then drawn in Figure 5.This scan shift can become large gradually in the transmitting procedure of ion beam, by suitably arranging the current strength of this scanning magnet 2, just can make when ion beam arrive inject station time, its distribution in scanning direction (longitudinal direction namely in Fig. 5) has been enough to the whole cross sectional dimensions covering this workpiece 5.
In addition, this ion implant systems can also comprise the beam current measurement device be located at and injected station place, this beam current measurement device can through line on the scanning direction of ion beam within the scope of this default charge-mass ratio, to measure intensity distributions and the angular distribution of line, and measurement data is fed back to this scanning magnet 2 and this correcting magnet 4.
Wherein, those of ordinary skill in the art all knows, and above-mentioned ion source and ejector 1, scanning magnet 2, mass analyzing magmet 3 and correcting magnet 4 are all arranged in vacuum environment.
State shown in Fig. 4 and Fig. 5 is respectively two kinds of operational modes of this ion implant systems of the present invention and method.
Under the first mode shown in Fig. 4, when injecting station owing to arriving when ion beam, its cross section is all less than the size of this workpiece 5 in the distribution of each dimension, therefore, this workpiece scanning means will make workpiece 5 in the mode of level, vertical two-dimensional scan, back and forth through the ion beam within the scope of this default charge-mass ratio, this ion beam can on the surface of this workpiece 5 injection zone of continuous forming section overlap, and the final ion implantation whole surface of this workpiece 5 being completed to uniform dose.When the ion beam of the high line of employing, low-yield (such as line is greater than 1mA, and energy is lower than 3keV) carries out injecting, due to space charge and the impact of other effects, the control made beam homogeneity is become addition difficult.And in the first mode, by suitably arranging the current parameters of this correcting magnet 4, just this correcting magnet 4 can be adjusted to the calibration effect through ion beam wherein, realize the angular distribution of ion beam and the precise fine-adjustment of intensity distributions, make it preferably meet the injection parameter requirement preset.Especially, this first mode on the wherein one-dimensional movement of the mechanical two-dimensional scan of workpiece comparatively slowly scanning direction, can realize the uniform strength distribution of ion beam.This point is particularly important, because if the intensity distributions of ion beam on the scanning direction comparatively slowly of workpiece is uneven, when workpiece with the move mode of uniform increments back and forth through ion beam time, the striped that the ion beam of non-uniform Distribution just can form at surface of the work can be detected uneven by implantation dosage and cause.
Under the second pattern shown in Fig. 5, when injecting station owing to arriving when ion beam, its distribution in scanning direction (longitudinal direction namely in Fig. 5) has covered the whole cross sectional dimensions of this workpiece 5, therefore this workpiece scanning means only need make workpiece transversely carry out moving horizontally or horizontal sweep of one dimension comparatively lentamente, namely one or many ground is horizontal through the ion beam within the scope of this default charge-mass ratio, just finally can complete the ion implantation of uniform dose on the whole surface of this workpiece 5.In this second mode, equally can by suitably arranging the current parameters of this correcting magnet 4, adjust this correcting magnet 4 to the calibration effect through ion beam wherein, thus realize the angular distribution of ion beam and the precise fine-adjustment of intensity distributions, make it preferably meet the injection parameter requirement preset; Further, because the speed of scan ion beam ratio mechanical scanning workpiece is much higher, and under this kind of pattern, only need to carry out one-dimensional movement or scanning comparatively slowly to workpiece 5, therefore the productive rate of ion implantation process also can be greatly improved.
When have employed this beam current measurement device, in this ion injection method of the present invention, before the ion beam within the scope of this default charge-mass ratio is injected eventually to workpiece 5, can also comprise one utilizes the optimum configurations of the feedback data of this beam current measurement device to this scanning magnet 2 and this correcting magnet 4 to carry out the process adjusted that circulates, that is: this beam current measurement measurement device is utilized to inject line angular distribution and the intensity distributions at station place, if met and injected requirement, then start to perform workpiece 5 to inject processing procedure, if also do not meet and inject requirement, then this measurement data is fed back to this scanning magnet and this correcting magnet, based on current data, fine setting is proceeded to the parameter both this, to improve the scanning mode of line further, and the line through overscanning is calibrated further and further precise fine-adjustment is carried out to the angular distribution of line, also achieve the further correction of the monnolithic case profile to ion beam thus, and then utilize this beam current measurement device to measure the angular distribution of line and intensity distributions at injection station place, and its whether satisfied injection requirement is rejudged, circulation like this performs, reach the requirement of optimization injection processing procedure until the beam status injecting station place till.Then, just can start to perform the normal process processing procedure to workpiece 5.
In addition, according to concrete injection requirement, this ion implant systems can also comprise the speed change gear be located between this correcting magnet 4 and this workpiece scanning means, the ion beam acceleration or deceleration that this speed change gear utilizes known Electromagnetic Environmental Effect to make within the scope of this default charge-mass ratio, and energy filtering is carried out to the ion beam within the scope of this default charge-mass ratio simultaneously.
In sum, the present invention can adjust accurately to the angular distribution of ion beam and intensity distributions, guarantee that the angle uniformity of line can't incur loss when obtaining line dose uniformity, therefore, it is possible to improve the injection efficiency of ion implant systems, and obtain good processing quality; Meanwhile, invention also reduces production cost, simplify technological process, and have benefited from the simplicity in beam transmission path, further increase the control ability of dose uniformity to ion beam and angle uniformity.
Although the foregoing describe the specific embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is defined by the appended claims.Those skilled in the art, under the prerequisite not deviating from principle of the present invention and essence, can make various changes or modifications to these execution modes, but these change and amendment all falls into protection scope of the present invention.
Claims (9)
1. an ion implant systems, is characterized in that, it comprises:
One ion source and an ejector, this ejector is used for drawing from this ion source the ion beam assembled; The transmission path of this ion beam is provided with successively:
One mass analyzing magmet, for selecting the ion beam within the scope of a default charge-mass ratio from this ion beam;
One correcting magnet, for calibrating the ion beam within the scope of this default charge-mass ratio;
One workpiece scanning means, passes ion beam within the scope of this default charge-mass ratio to carry out ion implantation for making workpiece;
This system also comprises:
One scanning magnet being located at this correcting magnet upstream, for the ion beam scanned through, this workpiece is covered to make the distribution of ion beam on ion-beam scanning direction within the scope of this preset energy at injection station place, wherein, the sweep speed of ion beam is much larger than the sweep speed of workpiece, and the scanning direction of the scanning direction of ion beam and workpiece is perpendicular, wherein, this scanning magnet is used for the non-diverging plane interscan ion beam at this mass analyzing magmet;
One is located at the beam current measurement device injecting station place, for measuring intensity distributions and the angular distribution of line on the scanning direction of ion beam,
This scanning magnet is located on the beam transmission path between this ejector and this mass analyzing magmet.
2. ion implant systems as claimed in claim 1, it is characterized in that, this ejector is provided so that the ion beam of drawing from this ion source is assembled in the non-diverging plane of this mass analyzing magmet.
3. ion implant systems as claimed in claim 2, it is characterized in that, this scanning magnet covers this workpiece for making the ion beam within the scope of this default charge-mass ratio on the non-diverging direction being distributed in this mass analyzing magmet at this workpiece place, this workpiece scanning means for making workpiece to carry out the mode of one-dimensional movement or scanning perpendicular to the scanning direction of the ion beam within the scope of this default charge-mass ratio, through the ion beam within the scope of this default charge-mass ratio to carry out ion implantation.
4. ion implant systems as claimed in claim 2, is characterized in that, this beam current measurement device is also for feeding back to this scanning magnet and this correcting magnet by measurement data.
5. ion implant systems as claimed in claim 2, it is characterized in that, this ion implant systems also comprises the speed change gear be located between this correcting magnet and this workpiece scanning means, for making the ion beam acceleration or deceleration within the scope of this default charge-mass ratio, and energy filtering is carried out to the ion beam within the scope of this default charge-mass ratio simultaneously.
6. utilize the ion injection method that the ion implant systems described in claim 1 realizes, it is characterized in that, it comprises the following steps:
S
1, utilize this ejector from this ion source draw assemble ion beam;
S
2, the ion beam that utilizes this mass analyzing magmet to select within the scope of this default charge-mass ratio from this ion beam;
S
3, utilize this correcting magnet to calibrate ion beam within the scope of this default charge-mass ratio;
S
4, utilize this workpiece scanning means to make workpiece pass ion beam within the scope of this default charge-mass ratio to carry out ion implantation.
7. ion injection method as claimed in claim 6, is characterized in that, in step S
1with step S
2between or in step S
2with step S
3between, utilize this scanning magnet at the non-diverging plane interscan ion beam of this mass analyzing magmet, and make the ion beam within the scope of this default charge-mass ratio cover this workpiece, in step S on the non-diverging direction being distributed in this mass analyzing magmet at this workpiece place
4in this workpiece scanning means make workpiece to carry out the mode of one-dimensional movement or scanning perpendicular to the scanning direction of the ion beam within the scope of this default charge-mass ratio, through the ion beam within the scope of this default charge-mass ratio to carry out ion implantation.
8. ion injection method as claimed in claims 6 or 7, it is characterized in that, this ion implant systems also comprises the speed change gear be located between this correcting magnet and this workpiece scanning means, in step S
3with step S
4between, utilize the ion beam acceleration or deceleration that this speed change gear makes within the scope of this default charge-mass ratio, and energy filtering is carried out to the ion beam within the scope of this default charge-mass ratio simultaneously.
9. ion injection method as claimed in claims 6 or 7, is characterized in that, in step S
3with step S
4between, utilize intensity distributions and the angular distribution of the scanning direction of the ion beam of this beam current measurement device within the scope of this default charge-mass ratio being measured line, and measurement data is fed back to this scanning magnet and this correcting magnet, by the adjustment to this scanning magnet and this correcting magnet, intensity distributions and angular distribution that the ion beam within the scope of this default charge-mass ratio is injecting station place is made to meet preset requirement.
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| CN102194637B true CN102194637B (en) | 2015-03-18 |
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| CN103187228A (en) * | 2011-12-30 | 2013-07-03 | 北京中科信电子装备有限公司 | Correcting method for analyzer magnetic field data |
| CN105264636B (en) * | 2014-04-10 | 2018-12-25 | 上海凯世通半导体股份有限公司 | Beam Transport Systems and method |
| CN106139419B (en) * | 2016-07-29 | 2022-10-28 | 中国原子能科学研究院 | Rotating frame for treating tumors |
| CN109256314B (en) * | 2018-10-11 | 2020-08-28 | 中国电子科技集团公司第四十八研究所 | Fixed-point ion implantation device and implantation method for substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4922106A (en) * | 1986-04-09 | 1990-05-01 | Varian Associates, Inc. | Ion beam scanning method and apparatus |
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| US7675050B2 (en) * | 2006-06-12 | 2010-03-09 | Advanced Ion Beam Technology, Inc. | Apparatus and method for ion beam implantation using ribbon and spot beams |
| US7227160B1 (en) * | 2006-09-13 | 2007-06-05 | Axcelis Technologies, Inc. | Systems and methods for beam angle adjustment in ion implanters |
| US7507978B2 (en) * | 2006-09-29 | 2009-03-24 | Axcelis Technologies, Inc. | Beam line architecture for ion implanter |
| US7750320B2 (en) * | 2006-12-22 | 2010-07-06 | Axcelis Technologies, Inc. | System and method for two-dimensional beam scan across a workpiece of an ion implanter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4922106A (en) * | 1986-04-09 | 1990-05-01 | Varian Associates, Inc. | Ion beam scanning method and apparatus |
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Address after: 201203 Shanghai City Newton Road, Zhangjiang High Tech Park of Pudong New Area No. 200 Building No. 7, No. 1 Patentee after: KINGSTONE SEMICONDUCTOR COMPANY LTD. Address before: 201203 Shanghai City Newton Road, Zhangjiang High Tech Park of Pudong New Area No. 200 Building No. 7, No. 1 Patentee before: Shanghai Kaishitong Semiconductor Co., Ltd. |