CN103187228A - Correcting method for analyzer magnetic field data - Google Patents

Correcting method for analyzer magnetic field data Download PDF

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Publication number
CN103187228A
CN103187228A CN201110452396XA CN201110452396A CN103187228A CN 103187228 A CN103187228 A CN 103187228A CN 201110452396X A CN201110452396X A CN 201110452396XA CN 201110452396 A CN201110452396 A CN 201110452396A CN 103187228 A CN103187228 A CN 103187228A
Authority
CN
China
Prior art keywords
value
magnetic field
field data
analyzer
analyzer magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201110452396XA
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Chinese (zh)
Inventor
万伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Zhongkexin Electronic Equipment Co Ltd
Original Assignee
Beijing Zhongkexin Electronic Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Zhongkexin Electronic Equipment Co Ltd filed Critical Beijing Zhongkexin Electronic Equipment Co Ltd
Priority to CN201110452396XA priority Critical patent/CN103187228A/en
Priority to PCT/CN2012/081491 priority patent/WO2013097490A1/en
Publication of CN103187228A publication Critical patent/CN103187228A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/304Controlling tubes
    • H01J2237/30433System calibration

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

The invention discloses a correcting method for data processing of an analyzer magnetic field. The correcting method is characterized by improving the data returning precision of magnetic field through correcting of the magnetic filed data of an analyzer. Through conversion of a signal (1) and a signal (2), a true returning displayed value (3) is formed. A user can obtain a stable value when returning is stable because of repeated returning. Through contrast between the stable value and a reference value (5) and an equal relationship between the stable value and the reference value, a correcting value is confirmed.

Description

A kind of calibration steps of analyzer magnetic field data
Technical field
The present invention is a kind of software engineering, relates to the calibration steps of magnetic field data in the ion implantor analyzer.Belong to the software field that semiconductor device is made.
Background technology
The semiconductor integrated circuit manufacturing process has developed into 12 inches wafers, nm technology node period.Along with the wafer size is increasing, the unit component size is more and more littler, and is also just more and more higher to the performance requirement of semiconductor manufacturing equipment.Ion implantor is requisite key equipment in the semiconductor device manufacturing process.In order to improve the performance of ion implantor, make its development of satisfying the requirement of modern big wafer, nano-device production technology and adapting to the semiconductor process techniques in future, must develop full-automatic control system efficiently.
In the ion implantor, there are the many control of using magnetic field data processing, magnetic field size, magnetic field relevant with the close relation of electricity.These controlled quentity controlled variables have directly influenced whole ion implantor injection technology for the accuracy of numerical value.
By the calibration steps to ion implantor analyzer magnetic field data, improved the accuracy of return data, also effectively reduced the inevitable error in the numerical value simultaneously.
Summary of the invention
The present invention mainly is for the analyzer magnetic field data is more accurate, utilizes the calibration steps to analyzer magnetic field.
Concrete steps are as follows:
As shown in Figure 1, digital signal in the ion implantor (1) is by converting analog signal (2) to, in control software, show its intermediate value (3), by repeatedly reading, the value that can show change on the software, and our menu or the manual value (4) of input are reference value, and can show becomes the reference value (5) of returning show value, when the value (3) of change reach stable after, we just think that stationary value is to return the reference value of show value.
As shown in Figure 2, in the data value in analyzer magnetic field, level be fixed value fixed in manual input reference or the menu, y direction return show value, a is after manual input x, and the change by (3) value obtains y after reaching and stablizing, x and y are peer-to-peer, and b and c are other calibration values.
By a, b, c can determine an input reference and return the line of demonstration that the value of surveying when us is more many to analyzer magnetic field calibration, this line will be more accurate, when the too big value of fluctuation, can analyze wherein reason, finds out reason, deals with problems.
The present invention has following remarkable advantage:
1. by the calibration in analyzer magnetic field, can make the raising of numerical value accuracy.
2. by the calibration in analyzer magnetic field, can make numerical precision become controllability.
Embodiment
Below in conjunction with specific embodiment the present invention is described in further detail, but not as the restriction to patent of the present invention.
As shown in Figure 2, we by the digital signal in the ion implantor (1) by converting analog signal (2) to, in control software, show its intermediate value (3), by repeatedly reading, the value that can show change on the software, and our menu or the manual value (4) of input are reference value, and can show becomes the reference value (5) of returning show value, when the value (3) of change reach stable after, we just think that stationary value is to return the reference value of show value.
Then by manual input definite value x, and the change of passing through (3) value reaches stable y, and trunnion axis and the longitudinal axis obtain a, by repeatedly obtaining b, c.By the line of a, b, c, the accuracy of determined value is worth more manyly, and accuracy is more high.
So in the Calibration Method to the analyzer magnetic field data, the numerical value accuracy is improved, reduce error as much as possible.
Description of drawings
Fig. 1 is analyzer magnetic field data calibration flow chart illustration.
Fig. 2 is analyzer magnetic field data calibration key diagram.
The above elaborates content of the present invention.For persons skilled in the art, any apparent change that it is done all constitutes the infringement to patent of the present invention, with corresponding legal responsibilities without departing from the premise in the spirit of the present invention.

Claims (2)

1. the calibration steps of an analyzer magnetic field data is characterized in that: by the calibration to the analyzer magnetic field data, improve the accuracy of drawing return value in the bundle process, more can react control variables really, improve the technology of injecting engineering.
2. the calibration steps of an analyzer magnetic field data is characterized in that: by the calibration to the analyzer magnetic field data, can control and draw data accuracy required in the bundle process, according to actual needs, determine last accuracy.
CN201110452396XA 2011-12-30 2011-12-30 Correcting method for analyzer magnetic field data Pending CN103187228A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201110452396XA CN103187228A (en) 2011-12-30 2011-12-30 Correcting method for analyzer magnetic field data
PCT/CN2012/081491 WO2013097490A1 (en) 2011-12-30 2012-09-17 Calibration method for magnetic field data of analyzer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110452396XA CN103187228A (en) 2011-12-30 2011-12-30 Correcting method for analyzer magnetic field data

Publications (1)

Publication Number Publication Date
CN103187228A true CN103187228A (en) 2013-07-03

Family

ID=48678339

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110452396XA Pending CN103187228A (en) 2011-12-30 2011-12-30 Correcting method for analyzer magnetic field data

Country Status (2)

Country Link
CN (1) CN103187228A (en)
WO (1) WO2013097490A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000011943A (en) * 1998-06-18 2000-01-14 Sumitomo Eaton Noba Kk Ion implantation apparatus
US6965116B1 (en) * 2004-07-23 2005-11-15 Applied Materials, Inc. Method of determining dose uniformity of a scanning ion implanter
CN200959327Y (en) * 2006-04-07 2007-10-10 北京中科信电子装备有限公司 Magnetic analytic system of ion filler
CN101268339A (en) * 2005-09-21 2008-09-17 西门子公司 Method for operating an electromagnetic flowmeter and electromagnetic flowmeter
CN101840851A (en) * 2010-02-05 2010-09-22 上海凯世通半导体有限公司 Ion implantation system and method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102194637B (en) * 2010-03-18 2015-03-18 上海凯世通半导体有限公司 Ion implantation system and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000011943A (en) * 1998-06-18 2000-01-14 Sumitomo Eaton Noba Kk Ion implantation apparatus
US6965116B1 (en) * 2004-07-23 2005-11-15 Applied Materials, Inc. Method of determining dose uniformity of a scanning ion implanter
CN101268339A (en) * 2005-09-21 2008-09-17 西门子公司 Method for operating an electromagnetic flowmeter and electromagnetic flowmeter
CN200959327Y (en) * 2006-04-07 2007-10-10 北京中科信电子装备有限公司 Magnetic analytic system of ion filler
CN101840851A (en) * 2010-02-05 2010-09-22 上海凯世通半导体有限公司 Ion implantation system and method

Also Published As

Publication number Publication date
WO2013097490A1 (en) 2013-07-04

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Application publication date: 20130703

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