CN104021239B - A kind of method to be carried out curve fitting using temperature model - Google Patents
A kind of method to be carried out curve fitting using temperature model Download PDFInfo
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- CN104021239B CN104021239B CN201410164079.1A CN201410164079A CN104021239B CN 104021239 B CN104021239 B CN 104021239B CN 201410164079 A CN201410164079 A CN 201410164079A CN 104021239 B CN104021239 B CN 104021239B
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Abstract
The invention discloses a kind of method to be carried out curve fitting using temperature model, is related to characteristic of semiconductor and characterizes or model field.This method is：Various characteristic curves of the measurement device in preset temperature range respectively；According to the characteristic curve, the temperature coefficient of various characteristic index is calculated；Temperature effect model is established according to the temperature coefficient；The characteristic curve of the device is carried out curve fitting according to the temperature effect model, obtains curve matching precision；The curve matching precision after fitting is judged whether in the default accuracy rating of test characteristic curve of the device, if so, terminating；If it is not, then adjusting the temperature coefficient establishes temperature effect model.The present invention passes through the characteristic curve to measurement device in preset temperature range so that device is in temperature:Device curves fitting at 40 DEG C~125 DEG C is more accurate, increases substantially the precision that device model works under high/low temperature condition.
Description
Technical field
Field is characterized or modeled the present invention relates to semiconductor devices, more particularly to it is a kind of using temperature model progress curve plan
The method of conjunction.
Background technology
With the progress of integrated circuit processing technique, the critical size of cmos device is less and less, the second-order effect of device
Influence to device property is also increasing.Conventional world model (global model, such as BSIM4) has been difficult accurate table
Device property is levied, then industry starts largely to improve the essence of the curve matching in modeling process using local parameter (binning)
Degree.The method of this introducing local parameter is helpful for normal temperature (25 DEG C) characteristic curve fitting of device.But for temperature
Effect is spent, conventional model is normally based on the Semiconductor Physics mechanism having found, only provides a small amount of temperature effect parameter, such as
The variation with temperature coefficients such as semiconductor intrinsic carrier, threshold voltage, the mobility of carrier and drift velocity, compact pattern
Type (compact model) provides more perfect analytic formula, therefore the device property curve actually measured can be fitted
Very well.But for some temperature effects, or even unusual temperature effect, such as distinctive temperature transoid effect in Advanced CMOS Process
Answer (temperature inversion effect), if still using regular compact model, fitting precision is poor, even
It can not be fitted, therefore the device curves fitting under high temperature and low-temperature condition is usually more difficult, and the precision of model is brought very
Big loss.
Chinese patent (CN102385647B) discloses a kind of method for establishing MOSFET models, and this method includes 1, with institute
It is that reference axis establishes coordinate system to state MOSFET grid length and grid width, and in the whole device size battle array of the coordinate system
World model is extracted in row；2nd, parameter Dvt0, Dvt1 in the world model for being extracted the step 1, Dvt2, nlx,
Prwg, prwb, k3, k3b, w0, dwg, dwb, b0, b1, l1, lw, lw1, ww, w1, ww1 are both configured to 0；3rd, with the step 2
Based on the world model extracted, the single model of all MOSFET elements in the device size array is extracted；4th, extraction point
Block models.
The patent this method establishes sectional pattern with the method for the overall situation, the advantages of combining world model and sectional pattern,
Eliminating, parameter is discontinuous while also have good model accuracy, and can quickly establish model.But do not solve high
The problem of device curves fitting under gentle low-temperature condition is difficult, and the precision to model brings very big loss.
Chinese patent (CN102214260A) discloses a kind of method for carrying out carrying mould of taking part in building to semiconductor devices, this method
Including：Semiconductor devices is tested with semiconductor parametric tester, obtains the initial data of the semiconductor devices；Joined with carrying
Software extracting parameter from the initial data of the semiconductor devices, obtains old model parameter；Add in obtained old model parameter
Enter macro model, form the quasi- new model containing unknown parameter；New model parameter is obtained, the new model parameter is added to containing not
Know in the quasi- new model of parameter, form new model.
The patent has used macro model, realizes the automation to new plus model parameter extraction, so that complicated carries
Take part in building the simpler and efficient of moding.But it is difficult not solve the device curves fitting under high temperature and low-temperature condition, to mould
The precision of type brings the problem of very big loss.
The content of the invention
The present invention is difficult to solve the device curves fitting under high temperature and low-temperature condition, and the precision to model brings very big damage
The problem of mistake, so as to provide a kind of technical scheme of the method to be carried out curve fitting using temperature model.
A kind of method to be carried out curve fitting using temperature model of the present invention, is comprised the steps：
Step 1. distinguishes characteristic curve of the measurement device in preset temperature range；
Step 2. obtains temperature coefficient according to the characteristic curve；
Step 3. establishes temperature effect model according to the temperature coefficient；
Step 4. carries out curve fitting according to the temperature effect model to the characteristic curve of the device, obtains curve and intends
Close precision；
Step 5. judges whether the curve matching precision after fitting in the test characteristic curve of the device presets precision model
In enclosing, if so, terminating；If it is not, perform step 3.
Preferably, preset temperature range is described in step 1：- 40 DEG C~125 DEG C.
Preferably, characteristic curve includes described in step 1：The transfer characteristic curve of metal-oxide-semiconductor, metal-oxide-semiconductor output characteristic curve,
Transconductance characteristic curve, output resistance, output conductance characteristic curve and gate current characteristic curve.
Preferably, temperature coefficient is described in step 2：Threshold voltage temperature coefficient, linear current temperature coefficient, saturation electricity
Flow temperature coefficient, leakage current temperature coefficient, mutual conductance temperature coefficient, output resistance temperature coefficient, conductance temperature coefficient and grid electricity
Flow temperature coefficient.
Preferably, the detailed process to be carried out curve fitting in step 4 is：Emulation is carried out according to the temperature effect model to obtain
The characteristic curve of the device is obtained, by the characteristic curve compared with the test curve of the device, obtains curve matching
Precision.
Preferably, precision is preset described in step 5 is：The simulated properties curve compared with the test curve,
The error of acquisition, the error are less than or equal to 5%.
Beneficial effects of the present invention：
The present invention passes through the characteristic curve to measurement device in preset temperature range so that device is in temperature:-40℃
Device curves fitting at~125 DEG C is more accurate, increases substantially the precision that device model works under high/low temperature condition.
Brief description of the drawings
Fig. 1 is the method flow diagram of the present invention to be carried out curve fitting using temperature model.
Embodiment
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
As shown in figure 1, the present invention provides a kind of method to be carried out curve fitting using temperature model, comprise the steps：
Step 1. distinguishes characteristic curve of the measurement device in preset temperature range, and preset temperature range is：- 40 DEG C~
125 DEG C, characteristic curve includes：Transfer characteristic curve (IDVG), metal-oxide-semiconductor output characteristic curve (IDVD), the transconductance characteristic of metal-oxide-semiconductor
Curve (GM), output resistance characteristic curve (ROUT), output conductance characteristic curve (GDS) and gate current characteristic curve (IG) etc..
Step 2. obtains the temperature coefficient of various performance indications according to the characteristic curve surveyed, and main temperature coefficient has：
Threshold voltage temperature coefficient, linear current temperature coefficient, saturation current temperature coefficient, leakage current temperature coefficient, mutual conductance temperature
Coefficient, output resistance temperature coefficient, the temperature coefficient etc. of conductance temperature coefficient and gate current；
Step 3. is assessed and establishes temperature effect model according to temperature coefficient, then design temperature model parameter accordingly；
Step 4. carries out curve fitting according to this temperature effect model to the characteristic curve of device, obtains curve matching essence
Degree, the detailed process to carry out curve fitting are：The various characteristic curves of emulation acquisition device are carried out according to temperature effect model, will
Simulated properties curve obtains curve matching precision compared with the actual test curve of device；
Step 5. judges whether the curve matching precision after fitting presets precision (emulation is special in the test characteristic curve of device
Linearity curve is compared with test curve, the error of acquisition, and error is less than or equal in the range of 5%), if so, terminating；If it is not, hold
Row step 3.
At present in the modeling process to device property, the CMOS output characteristic curves being frequently encountered under room temperature condition can
To be fitted well, but it is very poor to the curve matching precision under condition of different temperatures.On the one hand be because industry common model (such as
BSIM4 temperature parameter is fewer in), is on the other hand due to that the remolding sensitivity of temperature effect in these models is relatively low.At this
Threshold voltage temperature coefficient, linear current temperature coefficient, saturation current temperature coefficient and leakage current temperature are added in embodiment
After the parameters such as coefficient, large-sized W/L=10/10um (W is grid width, and L is grid length) device can be used big
The grid length of size and the volume charge effect coefficient t0_A0 of width are fitted；Using large-sized grid length, small chi
The volume charge effect coefficient tl_A0 of very little grid width is fitted the defeated of W/L=10/0.04um short channel device different temperatures
Go out characteristic；Using the volume charge effect coefficient tw_A0 of the grid length of small size, large-sized grid width come to adjusting narrow ditch
Device W/L=0.12/10um curves；Using the grid length of small size, the volume charge effect coefficient of the grid width of small size
Tp_A0 optimizes the output characteristics of W/L=0.12/0.04um gadget.To various sizes of device, different parameters are used
Fitting, can cause fitting precision to improve.Realistic model establishes process, and temperature coefficient setting is as shown in following programs：
Its built-in temperature effect model is closed on the basis of original temperature model, and original temperature parameter is set
For 0, and a kind of new model framework is established, as shown in above-mentioned program.
This method is by changing its built-in temperature model formula, so as to introduce a large amount of temperature parameters.Sign is such as turned off
The parameter of threshold voltage temperature effect, and it is changed to increasingly complex rational formula.Further, it is also possible to it is introduced into some original models
Unexistent temperature effect, leakage current ID temperature effect is such as influenceed on the volume charge of cmos device completely without the temperature characterized
Model, add four temperature parameters (to_A0, tl_A0, tw_A0, tp_A0).By this method so that device is in temperature
For:Device curves fitting at -40 DEG C~125 DEG C is more accurate, increases substantially device model and is worked under high/low temperature condition
Precision.
, can be extremely flexibly fine according to the characteristic curve actually measured using the universal temperature model in the present invention
Characteristic curve under ground fitting different temperatures, establishes more accurately device model.
Preferred embodiments of the present invention are the foregoing is only, not thereby limit embodiments of the present invention and protection model
Enclose, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Scheme obtained by equivalent substitution and obvious change, should be included in protection scope of the present invention.
Claims (3)
- A kind of 1. method to be carried out curve fitting using temperature model, it is characterised in that comprise the steps：Step 1. distinguishes characteristic curve of the measurement device in preset temperature range；Step 2. obtains temperature coefficient according to the characteristic curve；Step 3. establishes temperature effect model according to the temperature coefficient；Step 4. carries out the characteristic curve that emulation obtains the device according to the temperature effect model, by the characteristic curve with The test curve of the device is compared, and obtains curve matching precision；Step 5. judges the curve matching precision after fitting whether in the default accuracy rating of test characteristic curve of the device, If so, terminate；If it is not, perform step 3；Wherein, characteristic curve includes described in step 1：The transfer characteristic curve of metal-oxide-semiconductor, metal-oxide-semiconductor output characteristic curve, mutual conductance are special Linearity curve, output resistance, output conductance characteristic curve and gate current characteristic curve；Temperature coefficient is described in step 2：Threshold value electricity Press temperature coefficient, linear current temperature coefficient, saturation current temperature coefficient, leakage current temperature coefficient, mutual conductance temperature coefficient, defeated Go out temperature-coefficient of electrical resistance, conductance temperature coefficient and gate current temperature coefficient.
- A kind of 2. method to be carried out curve fitting using temperature model as claimed in claim 1, it is characterised in that institute in step 1 Stating preset temperature range is：- 40 DEG C~125 DEG C.
- A kind of 3. method to be carried out curve fitting using temperature model as claimed in claim 1, it is characterised in that institute in step 5 Stating default precision is：The simulated properties curve is compared with the test curve, the error of acquisition, and the error is less than etc. In 5%.
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104992005B (en) * | 2015-06-23 | 2018-11-27 | 中国科学院微电子研究所 | A kind of method of limit device model Applicable temperature range |
| CN105138803A (en) * | 2015-09-27 | 2015-12-09 | 上海华力微电子有限公司 | Universal mismatch model with consideration of temperature effect and method for extracting mismatch model |
| CN105760593B (en) * | 2016-02-05 | 2018-11-09 | 华东师范大学 | A kind of MOS transistor NBTI effects R-D model parameter extraction methods |
| CN108846171B (en) * | 2018-05-28 | 2021-06-29 | 北京智芯微电子科技有限公司 | Method for establishing sub-circuit model for simulating MOSFET temperature electrical characteristics |
| CN109117528B (en) * | 2018-07-27 | 2023-06-13 | 上海华力微电子有限公司 | MOS device subcircuit temperature model based on BSIM4 model and modeling method |
| CN109738115A (en) * | 2018-12-07 | 2019-05-10 | 武汉航空仪表有限责任公司 | A kind of temperature voltage acquisition methods of silicon resonant pressure converter |
| CN117473919A (en) * | 2023-12-25 | 2024-01-30 | 陕西航空电气有限责任公司 | Electromagnetic compatibility modeling method based on SiC MOSFET device characteristic behavior model |
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