CN109738115A - A kind of temperature voltage acquisition methods of silicon resonant pressure converter - Google Patents
A kind of temperature voltage acquisition methods of silicon resonant pressure converter Download PDFInfo
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- CN109738115A CN109738115A CN201811491855.3A CN201811491855A CN109738115A CN 109738115 A CN109738115 A CN 109738115A CN 201811491855 A CN201811491855 A CN 201811491855A CN 109738115 A CN109738115 A CN 109738115A
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- temperature
- temperature voltage
- pressure converter
- silicon resonant
- resonant pressure
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Abstract
The invention belongs to aircraft barometric surveying technical fields, and in particular to a kind of temperature voltage acquisition methods of silicon resonant pressure converter.The conventional method of temperature collection voltage signal is that 10 ADC directly passed through signal built in dsp processor are acquired, and the temperature voltage signal collected in this way is unable to satisfy accuracy requirement.The present invention proposes a kind of method for acquiring temperature of silicon resonant pressure converter, and silicon resonant pressure converter temperature signal is amplified, and using quadratic polynomial curve matching, and the method being averaged is sampled using the continuous multicycle, reduces A/D sampling error and filters.Therefore the present invention is generally applicable in the flush airdata sensing system device for using silicon resonant pressure converter to survey pressure, temperature signal A/D sampling precision of silicon resonant pressure converter is improved, to calculate high-precision atmospheric pressure value.
Description
Technical field
The invention belongs to aircraft barometric surveying technical fields, and in particular to a kind of temperature voltage of silicon resonant pressure converter
Acquisition methods.
Background technique
Flush airdata sensing system device is the important composition component of aircraft air data system, high with survey pressure precision,
The features such as response frequency height, redundance.Flush airdata sensing system device uses silicon resonant pressure converter to acquire atmospheric pressure more
Power.Silicon resonant pressure converter exports frequency signal relevant to atmospheric pressure and voltage signal relevant with temperature, embedded
Air data sensor carries out F/D conversion to frequency signal using F/D circuit, using 10 ADC built in dsp processor to temperature
It spends voltage signal and carries out A/D conversion, and frequency and temperature voltage signal are substituted into correction formula using dsp processor and calculated, obtain
Atmospheric pressure value out.
Under the premise of not changing hardware, the conventional method of temperature collection voltage signal be by signal directly by DSP at
10 ADC built in reason device are acquired.10 ADC resolution ratio, precision and stabilities as built in dsp processor are lower,
Therefore the temperature voltage signal collected in this way is unable to satisfy accuracy requirement.
Summary of the invention
The purpose of the present invention is: it proposes a kind of method for acquiring temperature of silicon resonant pressure converter, solves temperature voltage letter
The lower problem of number A/D sampling resolution, precision and stability.
A kind of temperature voltage acquisition methods of silicon resonant pressure converter, comprising the following steps:
The first, multiple groups temperature voltage is acquired by silicon resonant pressure converter, and using amplifying circuit that institute is collected
Temperature voltage signal amplification, carries out A/D conversion later；
The second, quadratic polynomial curve matching is carried out to the temperature signal after conversion, obtains constant a, b and c
Fit equation are as follows: y=ax2+bx+c
Wherein y is the temperature voltage after digital multimeter measuring and amplifying, and x is the temperature signal after conversion；
Third, measurement temperature voltage
Acquisition multiple groups temperature voltage simultaneously amplifies identical multiple, and temperature voltage after correcting is calculated according to fit equation；
4th, mean temperature voltage calculates
Temperature voltage is averaged after multiple groups are corrected, as required temperature voltage.
Amplification factor is 2.5-3.5.
Amplification factor is 2.7.
DSP is taken to carry out A/D conversion and calculating.
The utility model has the advantages that temperature signal A/D sampling precision of silicon resonant pressure converter is improved, it is high-precision big to calculate
Air pressure force value.
Specific embodiment
The technical scheme adopted by the invention is as follows:
1. being amplified the temperature voltage signal of silicon resonant pressure converter using amplifying circuit, amplifying circuit has high-precision
Degree, Low Drift Temperature, gain stabilization voltage amplification function, gain G ain=100k Ω/37.5k Ω ≈ 2.7, i.e., by silicon resonant pressure
Converter temperature voltage amplifies 2.7 times, and the pressure-sensitivity of temperature voltage is reduced to about -3Pa/mV.
2. taking to improve silicon resonant pressure converter temperature voltage A/D signal conversion accuracy to dsp processor A/D
Conversion carries out demarcating modified method, i.e., the temperature voltage value after being converted A/D by fitting formula, by gained known to verifying
The voltage value arrived is improved in the deviation tolerance interval of digital multimeter measured value using the repeatability of ADC and voltage reference
The precision of voltage measurement.
The present invention uses quadratic polynomial curve-fitting method, if quadratic polynomial fit equation is y=ax2+ bx+c is (wherein
Y is temperature voltage after the amplification of digital multimeter test silicon resonance, and x is A/D conversion before being corrected with dsp processor A/D conversion testing
Voltage value).To temperature voltage value and use after using digital multimeter test silicon resonant pressure converter to amplify under each temperature spot
Voltage value before dsp processor A/D conversion testing is corrected, is calculated coefficient a, b, c of quadratic polynomial curve matching, by coefficient
Nonvolatile storage is written.When dsp processor calculates temperature voltage, coefficient a, b, c in nonvolatile storage are first read out, so
The preceding temperature voltage of amendment is converted to by A/D afterwards, according to formula y=ax2+ bx+c calculate amendment after temperature voltage, then into
Row packing pressure calculates.
3. having used 1000 times in dsp processor and having measured the method being averaged, reduce the wave of temperature voltage value A/D conversion
It is dynamic.
Claims (4)
1. a kind of temperature voltage acquisition methods of silicon resonant pressure converter, which is characterized in that method includes the following steps:
The first, multiple groups temperature voltage is acquired by silicon resonant pressure converter, and uses amplifying circuit by the collected temperature of institute
Voltage signal amplification, carries out A/D conversion later；
The second, quadratic polynomial curve matching is carried out to the temperature signal after conversion, obtains constant a, b and c fit equation are as follows: y
=ax2+bx+c
Wherein y is the temperature voltage after digital multimeter measuring and amplifying, and x is the temperature signal after conversion；
Third, measurement temperature voltage
Acquisition multiple groups temperature voltage simultaneously amplifies identical multiple, and temperature voltage after correcting is calculated according to fit equation；
4th, mean temperature voltage calculates
Temperature voltage is averaged after multiple groups are corrected, as required temperature voltage.
2. temperature voltage acquisition methods according to claim 1, it is characterised in that: amplification factor 2.5-3.5.
3. temperature voltage acquisition methods according to claim 2, it is characterised in that: amplification factor 2.7.
4. temperature voltage acquisition methods according to claim 1, it is characterised in that: DSP is taken to carry out A/D conversion and meter
It calculates.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811491855.3A CN109738115A (en) | 2018-12-07 | 2018-12-07 | A kind of temperature voltage acquisition methods of silicon resonant pressure converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811491855.3A CN109738115A (en) | 2018-12-07 | 2018-12-07 | A kind of temperature voltage acquisition methods of silicon resonant pressure converter |
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| CN109738115A true CN109738115A (en) | 2019-05-10 |
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| CN201811491855.3A Pending CN109738115A (en) | 2018-12-07 | 2018-12-07 | A kind of temperature voltage acquisition methods of silicon resonant pressure converter |
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Citations (5)
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| US20050109080A1 (en) * | 2003-11-24 | 2005-05-26 | Hok Instrument Ab | Real time analysis for gas mixtures |
| CN102506859A (en) * | 2011-10-31 | 2012-06-20 | 北京航空航天大学 | Gyro signal acquisition circuit and signal filtering system for three-axis inertially-stabilized platform |
| CN102539005A (en) * | 2011-12-26 | 2012-07-04 | 浙江大学 | Coupling-based non-contact temperature measurement system and coupling-based non-contact temperature measurement method |
| CN103354447A (en) * | 2013-07-05 | 2013-10-16 | 广东合微集成电路技术有限公司 | Compensation system used for MEMS resonator |
| CN104021239A (en) * | 2014-04-22 | 2014-09-03 | 上海华力微电子有限公司 | Method for conducting curve fitting through temperature model |
-
2018
- 2018-12-07 CN CN201811491855.3A patent/CN109738115A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050109080A1 (en) * | 2003-11-24 | 2005-05-26 | Hok Instrument Ab | Real time analysis for gas mixtures |
| CN102506859A (en) * | 2011-10-31 | 2012-06-20 | 北京航空航天大学 | Gyro signal acquisition circuit and signal filtering system for three-axis inertially-stabilized platform |
| CN102539005A (en) * | 2011-12-26 | 2012-07-04 | 浙江大学 | Coupling-based non-contact temperature measurement system and coupling-based non-contact temperature measurement method |
| CN103354447A (en) * | 2013-07-05 | 2013-10-16 | 广东合微集成电路技术有限公司 | Compensation system used for MEMS resonator |
| CN104021239A (en) * | 2014-04-22 | 2014-09-03 | 上海华力微电子有限公司 | Method for conducting curve fitting through temperature model |
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Application publication date: 20190510 |
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| RJ01 | Rejection of invention patent application after publication |