CN104021239A - Method for conducting curve fitting through temperature model - Google Patents
Method for conducting curve fitting through temperature model Download PDFInfo
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- CN104021239A CN104021239A CN201410164079.1A CN201410164079A CN104021239A CN 104021239 A CN104021239 A CN 104021239A CN 201410164079 A CN201410164079 A CN 201410164079A CN 104021239 A CN104021239 A CN 104021239A
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Abstract
The invention discloses a method for conducting curve fitting through a temperature model, and relates to the field of semiconductor characterization or modeling. The method includes the steps of measuring various characteristic curves of a device within a preset temperature range, calculating temperature coefficients of various characteristic indexes according to the characteristic curves, establishing the temperature effect model according to the temperature coefficients, conducting curve fitting on the characteristic curves of the device according to the temperature effect model to obtain the curve fitting accuracy, judging whether the curve fitting accuracy obtained through fitting is within a preset accuracy range of the test characteristic curves of the device or not, if yes, ending the process, and if not, adjusting the temperature effect model established according to the temperature coefficients. According to the method, by measuring the characteristic curves, within the preset temperature range, of the device, the device curve fitting is made more accurate when the device is at the temperature ranging from -40 DEG C to 125 DEG C, and the work accuracy of a device model under the high temperature condition and the low temperature condition is greatly improved.
Description
Technical field
The present invention relates to semiconductor devices and characterize or modeling field, relate in particular to a kind of method that adopts temperature model to carry out curve fitting.
Background technology
Along with the progress of integrated circuit processing technique, the critical size of cmos device is more and more less, and the second-order effect of device is also increasing on the impact of device property.Conventional world model (global model, as BSIM4) has been difficult to accurate characterizing device characteristic, so industry starts to use in a large number local parameter (binning) to improve the curve precision in modeling process.The method of this introducing local parameter is helpful for normal temperature (25 DEG C) characteristic curve fitting of device.But for temperature effect, conventional model is the semiconductor physics mechanism based on having found normally, a small amount of temperature effect parameter is only provided, as the variation with temperature such as mobility and the drift velocity coefficient of semiconductor intrinsic carrier, threshold voltage, charge carrier, compact model (compact model) provide comparatively perfect analytic formula, and therefore the device property curve of actual measurement is can matching fine.But for some temperature effects, even unusual temperature effect, as distinctive temperature transoid effect (temperature inversion effect) in Advanced CMOS Process, if still adopt conventional compact model, fitting precision is poor, even cannot matching, therefore usually difficulty comparatively of the device curve under high temperature and low-temperature condition, brings very large loss to the precision of model.
Chinese patent (CN102385647B) discloses a kind of method of the MOSFET of foundation model, the method comprises 1, set up coordinate system taking the grid length of described MOSFET and grid width as coordinate axis, and extracts world model in the whole device size array of described coordinate system; 2, parameter Dvt0, Dvt1 in the world model described step 1 being extracted, Dvt2, nlx, prwg, prwb, k3, k3b, w0, dwg, dwb, b0, b1, l1, lw, lw1, ww, w1, ww1 are set to 0; 3, the world model being extracted taking described step 2 is basis, extracts the single model of all MOSFET devices in described device size array; 4, extract sectional pattern.
This patent the method is set up sectional pattern by overall method, combines the advantage of world model and sectional pattern, and parameter is discontinuous also has a good model accuracy simultaneously eliminating, and can Rapid Establishment model.But do not solve the device curve difficulty under high temperature and low-temperature condition, bring the problem of very large loss to the precision of model.
Chinese patent (CN102214260A) discloses a kind of method of semiconductor devices being carried to the mould of taking part in building, and the method comprises: with semiconductor parametric tester, semiconductor devices is tested, obtained the raw data of this semiconductor devices; With carrying ginseng software extracting parameter from the raw data of this semiconductor devices, obtain old model parameter; In the old model parameter obtaining, add macro model, form the accurate new model that contains unknown parameter; Obtain new model parameter, this new model parameter is joined in the accurate new model that contains unknown parameter, form new model.
This patent has been used macro model, has realized the robotization to newly adding model parameter extraction, thereby makes complicated the more simple and efficient of the moding of taking part in building of carrying.But do not solve the device curve difficulty under high temperature and low-temperature condition, bring the problem of very large loss to the precision of model.
Summary of the invention
The present invention is the device curve difficulty solving under high temperature and low-temperature condition, brings the problem of very large loss to the precision of model, thereby a kind of technical scheme that adopts the method that temperature model carries out curve fitting is provided.
A kind of method that adopts temperature model to carry out curve fitting of the present invention, comprises the steps:
Step 1. is the family curve of measuring element in preset temperature range respectively;
Step 2., according to described family curve, is obtained temperature coefficient;
Step 3. is set up temperature effect model according to described temperature coefficient;
Step 4. carries out curve fitting to the family curve of described device according to described temperature effect model, obtains curve precision;
Step 5. judges that whether the curve precision after matching is preset in accuracy rating at the test characteristic curve of described device, if so, finishes; If not, execution step 3.
Preferably, preset temperature range described in step 1 is :-40 DEG C～125 DEG C.
Preferably, described in step 1, family curve comprises: transfer characteristic curve, metal-oxide-semiconductor output characteristic curve, transconductance characteristic curve, output resistance, output conductance family curve and the gate current family curve of metal-oxide-semiconductor.
Preferably, temperature coefficient described in step 2 is: threshold voltage temperature coefficient, linear current temperature coefficient, saturation current temperature coefficient, leakage current temperature coefficient, mutual conductance temperature coefficient, output resistance temperature coefficient, electricity are led temperature coefficient and gate current temperature coefficient.
Preferably, the detailed process carrying out curve fitting in step 4 is: carry out emulation and obtain the family curve of described device according to described temperature effect model, the test curve of described family curve and described device is compared, obtain curve precision.
Preferably, described in step 5, default precision is: described simulated properties curve and described test curve compare, the error of acquisition, and described error is less than or equal to 5%.
Beneficial effect of the present invention:
The present invention, by the family curve in preset temperature range to measuring element, makes device in temperature be: the device curve at-40 DEG C～125 DEG C is more accurate, increases substantially the precision that device model is worked under high/low temperature condition.
Brief description of the drawings
Fig. 1 is the method flow diagram that employing temperature model of the present invention carries out curve fitting.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but not as limiting to the invention.
As shown in Figure 1, the invention provides a kind of method that adopts temperature model to carry out curve fitting, comprise the steps:
Step 1. is the family curve of measuring element in preset temperature range respectively, preset temperature range is :-40 DEG C～125 DEG C, family curve comprises: transfer characteristic curve (IDVG), metal-oxide-semiconductor output characteristic curve (IDVD), transconductance characteristic curve (GM), output resistance family curve (ROUT), output conductance family curve (GDS) and the gate current family curve (IG) etc. of metal-oxide-semiconductor.
Step 2. is according to surveyed family curve, obtain the temperature coefficient of various performance index, main temperature coefficient has: threshold voltage temperature coefficient, linear current temperature coefficient, saturation current temperature coefficient, leakage current temperature coefficient, mutual conductance temperature coefficient, output resistance temperature coefficient, electricity are led the temperature coefficient of temperature coefficient and gate current etc.;
Temperature effect model is assessed and set up to step 3., according to temperature coefficient,, then design temperature model parameter accordingly;
Step 4. carries out curve fitting to the family curve of device according to this temperature effect model, obtain curve precision, the detailed process carrying out curve fitting is: the various characteristics curve that carries out emulation acquisition device according to temperature effect model, the actual test curve of simulated properties curve and device is compared, obtain curve precision;
Step 5. judges that curve precision after matching whether in the default precision of test characteristic curve of device (simulated properties curve and test curve compare, the error of acquisition, error is less than or equal to 5%) scope, if so, finishes; If not, execution step 3.
In to the modeling process of device property, often can run into the CMOS output characteristic curve matching well under room temperature condition at present, but very poor to the curve precision under condition of different temperatures.Being because temperature parameter is fewer in industry common model (as BSIM4) on the one hand, is because the remolding sensitivity of the temperature effect in these models is lower on the other hand.Add in the present embodiment after the parameters such as threshold voltage temperature coefficient, linear current temperature coefficient, saturation current temperature coefficient and leakage current temperature coefficient, can adopt the volume charge effect coefficient t0_A0 of large-sized grid length and width to carry out matching to the device of large-sized W/L=10/10um (W is grid width, and L is grid length); Adopt the volume charge effect coefficient tl_A0 of large-sized grid length, undersized grid width to carry out the output characteristics of the short channel device different temperatures of matching W/L=10/0.04um; Adopt the volume charge effect coefficient tw_A0 of undersized grid length, large-sized grid width to adjusting narrow ditch device W/L=0.12/10um curve; Adopt the volume charge effect coefficient tp_A0 of undersized grid length, undersized grid width to optimize the output characteristics of the gadget of W/L=0.12/0.04um.To the device of different size, carry out matching with different parameters, can make fitting precision improve.The process of establishing of realistic model, and temperature coefficient is set as follows shown in the program of stating:
On original temperature model basis, close its built-in temperature effect model, and original temperature parameter is set to 0, and sets up a kind of new model framework, as shown in said procedure.
This method is passed through its built-in temperature model formula of amendment, thereby introduces a large amount of temperature parameters.Characterize the parameter of threshold voltage temperature effect as turned off, and change more complicated reasonably formula into.In addition, can also introduce unexistent temperature effect in some original models, the temperature model not characterizing completely as the volume charge of cmos device affected to the temperature effect of leakage current ID, four temperature parameter (to_A0 are increased, tl_A0, tw_A0, tp_A0).Make by this method device in temperature be: the device curve at-40 DEG C～125 DEG C is more accurate, increases substantially the precision that device model is worked under high/low temperature condition.
Adopt the universal temperature model in the present invention, can, very neatly according to the family curve under the family curve matching different temperatures well of actual measurement, set up device model more accurately.
The foregoing is only preferred embodiment of the present invention; not thereby limit embodiments of the present invention and protection domain; to those skilled in the art; the scheme that being equal to of should recognizing that all utilizations instructions of the present invention and diagramatic content done replaces and apparent variation obtains, all should be included in protection scope of the present invention.
Claims (6)
1. a method that adopts temperature model to carry out curve fitting, is characterized in that, comprises the steps:
Step 1. is the family curve of measuring element in preset temperature range respectively;
Step 2., according to described family curve, is obtained temperature coefficient;
Step 3. is set up temperature effect model according to described temperature coefficient;
Step 4. carries out curve fitting to the family curve of described device according to described temperature effect model, obtains curve precision;
Step 5. judges that whether the curve precision after matching is preset in accuracy rating at the test characteristic curve of described device, if so, finishes; If not, execution step 3.
2. a kind of method that adopts temperature model to carry out curve fitting as claimed in claim 1, is characterized in that, preset temperature range described in step 1 is :-40 DEG C～125 DEG C.
3. a kind of method that adopts temperature model to carry out curve fitting as claimed in claim 1, it is characterized in that, described in step 1, family curve comprises: transfer characteristic curve, metal-oxide-semiconductor output characteristic curve, transconductance characteristic curve, output resistance, output conductance family curve and the gate current family curve of metal-oxide-semiconductor.
4. a kind of method that adopts temperature model to carry out curve fitting as claimed in claim 1, it is characterized in that, temperature coefficient described in step 2 is: threshold voltage temperature coefficient, linear current temperature coefficient, saturation current temperature coefficient, leakage current temperature coefficient, mutual conductance temperature coefficient, output resistance temperature coefficient, electricity are led temperature coefficient and gate current temperature coefficient.
5. a kind of method that adopts temperature model to carry out curve fitting as claimed in claim 1, it is characterized in that, the detailed process carrying out curve fitting in step 4 is: the family curve that carries out emulation and obtain described device according to described temperature effect model, the test curve of described family curve and described device is compared, obtain curve precision.
6. a kind of method that adopts temperature model to carry out curve fitting as claimed in claim 5, is characterized in that, described in step 5, default precision is: described simulated properties curve and described test curve compare, the error of acquisition, and described error is less than or equal to 5%.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104992005A (en) * | 2015-06-23 | 2015-10-21 | 中国科学院微电子研究所 | Method for limiting suitable temperature range of device model |
| CN105138803A (en) * | 2015-09-27 | 2015-12-09 | 上海华力微电子有限公司 | Universal mismatch model with consideration of temperature effect and method for extracting mismatch model |
| CN105760593A (en) * | 2016-02-05 | 2016-07-13 | 华东师范大学 | MOS transistor NBTI effect R-D model parameter extraction method |
| CN108846171A (en) * | 2018-05-28 | 2018-11-20 | 北京智芯微电子科技有限公司 | Emulate the method for building up of the sub-circuit model of MOSFET temperature electrology characteristic |
| CN109117528A (en) * | 2018-07-27 | 2019-01-01 | 上海华力微电子有限公司 | MOS device sub-circuit temperature model and modeling method based on BSIM4 model |
| CN109738115A (en) * | 2018-12-07 | 2019-05-10 | 武汉航空仪表有限责任公司 | A kind of temperature voltage acquisition methods of silicon resonant pressure converter |
| CN117473919A (en) * | 2023-12-25 | 2024-01-30 | 陕西航空电气有限责任公司 | Electromagnetic compatibility modeling method based on SiC MOSFET device characteristic behavior model |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101614592A (en) * | 2009-07-24 | 2009-12-30 | 中国科学院上海技术物理研究所 | A kind of detection method of LED lighting chips junction temperature |
| CN101976283A (en) * | 2010-10-21 | 2011-02-16 | 中国科学院上海微系统与信息技术研究所 | Method for determining BSIMSOI4 (Berkeley Short-channel IGFET Model Silicon on Insulator 4) direct current model parameter |
| CN102004028A (en) * | 2010-09-17 | 2011-04-06 | 中国科学院上海技术物理研究所 | Method for detecting effective heat dissipation of encapsulation structure of semiconductor light-emitting diode (LED) |
| CN102799721A (en) * | 2012-07-04 | 2012-11-28 | 上海宏力半导体制造有限公司 | Semiconductor device temperature coefficient modeling method and circuit design method |
-
2014
- 2014-04-22 CN CN201410164079.1A patent/CN104021239B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101614592A (en) * | 2009-07-24 | 2009-12-30 | 中国科学院上海技术物理研究所 | A kind of detection method of LED lighting chips junction temperature |
| CN102004028A (en) * | 2010-09-17 | 2011-04-06 | 中国科学院上海技术物理研究所 | Method for detecting effective heat dissipation of encapsulation structure of semiconductor light-emitting diode (LED) |
| CN101976283A (en) * | 2010-10-21 | 2011-02-16 | 中国科学院上海微系统与信息技术研究所 | Method for determining BSIMSOI4 (Berkeley Short-channel IGFET Model Silicon on Insulator 4) direct current model parameter |
| CN102799721A (en) * | 2012-07-04 | 2012-11-28 | 上海宏力半导体制造有限公司 | Semiconductor device temperature coefficient modeling method and circuit design method |
Non-Patent Citations (1)
| Title |
|---|
| 孙凯等: "碳化硅MOSFET的变温度参数建模", 《中国电机工程学报》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104992005A (en) * | 2015-06-23 | 2015-10-21 | 中国科学院微电子研究所 | Method for limiting suitable temperature range of device model |
| CN104992005B (en) * | 2015-06-23 | 2018-11-27 | 中国科学院微电子研究所 | A kind of method of limit device model Applicable temperature range |
| CN105138803A (en) * | 2015-09-27 | 2015-12-09 | 上海华力微电子有限公司 | Universal mismatch model with consideration of temperature effect and method for extracting mismatch model |
| CN105760593A (en) * | 2016-02-05 | 2016-07-13 | 华东师范大学 | MOS transistor NBTI effect R-D model parameter extraction method |
| CN105760593B (en) * | 2016-02-05 | 2018-11-09 | 华东师范大学 | A kind of MOS transistor NBTI effects R-D model parameter extraction methods |
| CN108846171A (en) * | 2018-05-28 | 2018-11-20 | 北京智芯微电子科技有限公司 | Emulate the method for building up of the sub-circuit model of MOSFET temperature electrology characteristic |
| WO2019228543A1 (en) * | 2018-05-28 | 2019-12-05 | 北京智芯微电子科技有限公司 | Method for establishing sub-circuit model that simulates mosfet electrical properties at different temperatures |
| CN108846171B (en) * | 2018-05-28 | 2021-06-29 | 北京智芯微电子科技有限公司 | Method for establishing sub-circuit model for simulating MOSFET temperature electrical characteristics |
| CN109117528A (en) * | 2018-07-27 | 2019-01-01 | 上海华力微电子有限公司 | MOS device sub-circuit temperature model and modeling method based on BSIM4 model |
| CN109117528B (en) * | 2018-07-27 | 2023-06-13 | 上海华力微电子有限公司 | MOS device subcircuit temperature model based on BSIM4 model and modeling method |
| CN109738115A (en) * | 2018-12-07 | 2019-05-10 | 武汉航空仪表有限责任公司 | A kind of temperature voltage acquisition methods of silicon resonant pressure converter |
| CN117473919A (en) * | 2023-12-25 | 2024-01-30 | 陕西航空电气有限责任公司 | Electromagnetic compatibility modeling method based on SiC MOSFET device characteristic behavior model |
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