CN104635135A - De-embedding method of compound semiconductor device - Google Patents
De-embedding method of compound semiconductor device Download PDFInfo
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- CN104635135A CN104635135A CN201510050561.7A CN201510050561A CN104635135A CN 104635135 A CN104635135 A CN 104635135A CN 201510050561 A CN201510050561 A CN 201510050561A CN 104635135 A CN104635135 A CN 104635135A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 150000001875 compounds Chemical class 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000012360 testing method Methods 0.000 claims abstract description 16
- 230000000694 effects Effects 0.000 claims description 85
- 229910052751 metal Inorganic materials 0.000 claims description 59
- 239000002184 metal Substances 0.000 claims description 59
- 230000005540 biological transmission Effects 0.000 claims description 38
- 239000011148 porous material Substances 0.000 claims description 19
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000000523 sample Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 3
- 238000002910 structure generation Methods 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 21
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 230000024241 parasitism Effects 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 101100219315 Arabidopsis thaliana CYP83A1 gene Proteins 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101000806846 Homo sapiens DNA-(apurinic or apyrimidinic site) endonuclease Proteins 0.000 description 1
- 101000835083 Homo sapiens Tissue factor pathway inhibitor 2 Proteins 0.000 description 1
- 101100269674 Mus musculus Alyref2 gene Proteins 0.000 description 1
- 101100140580 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) REF2 gene Proteins 0.000 description 1
- 102100026134 Tissue factor pathway inhibitor 2 Human genes 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention discloses a de-embedding method of a compound semiconductor device, belonging to the technical field of microelectronic integrated circuits. The method comprises the following steps: analyzing an on-chip test structure of the compound semiconductor device, and determining a parasitic effect generated by the compound semiconductor device; and removing the parasitic effect step by step from the outside to the inside according to the generated parasitic effect. The invention provides a layout structure reasonably analyzed in-chip test, which has practical physical significance and completely represents and removes possible parasitic influence; the defect of the traditional de-embedding method is improved, the de-embedding bandwidth is improved, and the de-embedding accuracy of a higher frequency range and the effectiveness of a high-frequency device model and circuit application are ensured. In addition, the invention fully considers and represents all possible parasitic effects from physical sources, improves the de-embedding precision and bandwidth, and has practical application value.
Description
Technical field
The present invention relates to test and the modeling of semiconductor devices, particularly relate to the De-embedding method of a kind of compound semiconductor device in radio-frequency devices technical field, belong to microelectronic integrated circuit technical field.
Background technology
Along with constantly reducing of semiconductor devices physical features size, the radio frequency operation scope of device increases gradually, even arrive Terahertz field, the raising of frequency means the reduction of wavelength, this conclusion is used for radio circuit, be exactly when wavelength can comparable with the physical dimension of discrete circuit component time, voltage and current no longer keeps space invariance, they must be regarded as the ripple of transmission, so, parasitic parameter is more and more obvious for the impact of device high frequency performance, and De-embedding is exactly to remove in semiconductor devices parasitic parameter to the impact of semiconductor devices high frequency performance, and then De-embedding method is very important for acquisition semiconductor devices intrinsic performance parameter accurately.
Plain conductor or discrete component are become at wavelength more and more with the analogous process of the average-size of circuit component to occur gradually as the transition of transmission line process.Rule of thumb, when discrete circuit component average-size is greater than 1/10 of wavelength, should application transport lineation opinion.For the transferring substrate of compound semiconductor device, the wavelength in transmission line can be expressed as with effective dielectric constant:
For gallium arsenide substrate material, its dielectric constant values is 12.9, under this technique, the wavelength of transmission line in 100GHz situation is about 0.8 millimeter, the wavelength of such 1/10 is 80 μm, when when sheet metal contact wires is more than 80 μm, obvious errors is there will be by the performance that lumped LC components carrys out characterizing metal connecting line under this frequency, and in fact in order to test probe needs, the size of metal pad is generally 100 μm × 100 μm, the size of metal pad has exceeded 1/10 of wavelength, add the metal interconnecting wires of metal pad to device input/output port, traditional LC lamped element parasitic network obviously can not accurately realize embedding effect, therefore traditional open, short method can only be applicable in the lower scope of frequency, when the frequency of operation of compound semiconductor radio-frequency devices is higher, utilize classic method De-embedding no longer applicable.
In addition, the raising of frequency imply that the mutual interference between On-wafer measurement metal construction is also very important parasitic parameter too, and the requirement only utilizing the method for transmission line can not meet De-embedding completely is so also described.In radio circuit, need to substrate thinning to improve the performance of circuit, dorsal pore can realize good ground connection, and the equivalent inductance of the parasitism of dorsal pore introducing simultaneously also be can not ignore.
Summary of the invention
(1) technical matters that will solve
Along with the raising of compound semiconductor radio-frequency devices frequency of operation, test and the modeling of device are faced with series of challenges, in view of this, the invention provides a kind of De-embedding method of compound semiconductor radio-frequency devices.
(2) technical scheme
For achieving the above object, the invention provides a kind of De-embedding method of compound semiconductor device, comprising: the test structure of analysis of compounds semiconductor devices, the ghost effect that deterministic compound semiconductor devices produces; And according to the ghost effect produced, remove ghost effect step by step from outside to inside.
In such scheme, the test structure of described analysis of compounds semiconductor devices, the ghost effect that deterministic compound semiconductor devices produces, specifically comprise: the test structure of analysis of compounds semiconductor devices, the ghost effect that deterministic compound semiconductor devices produces is followed successively by from outside to inside: metal pad ghost effect, the ghost effect of metal interconnection transformational structure, transmission line ghost effect and dorsal pore ghost effect.
In such scheme, the described ghost effect according to producing, remove ghost effect step by step from outside to inside, specifically comprise: by the cascade connection of matrix, remove metal pad ghost effect, the ghost effect of metal interconnection transformational structure, transmission line ghost effect and dorsal pore ghost effect successively from outside to inside, go to be embedded into intrinsic device input/output port with reference to plane, thus obtain the intrinsic parameters of compound semiconductor radio-frequency devices.
In such scheme, described compound semiconductor device is the compound semiconductor field effect transistor with radiofrequency characteristics.
In such scheme, described metal pad ghost effect, being the ghost effect that the metal pad for realizing probes touch produces, comprising the fl transmission line of two metal pads and the ghost effect of backward open circuited transmission line generation, and the ghost effect that the crosstalk capacitance between metal pad produces.
In such scheme, the ghost effect of described metal interconnection transformational structure, for the ghost effect of metal pad to the metal interconnection transformational structure generation excessive gently of transmission line, metal interconnection transformational structure is made up of lump LC equivalent structure, and the crosstalk capacitance between metal interconnection transformational structure is integrated in other two crosstalk capacitance and goes.
In such scheme, described transmission line ghost effect, being the ghost effect that the transmission line exported for connecting intrinsic device produces, comprising the ghost effect of both sides transmission line and the generation of crosstalk capacitance between the two.
In such scheme, described dorsal pore ghost effect is the ghost effect that the dorsal pore for realizing common source ground connection produces.
(3) beneficial effect
Compared with prior art, technique scheme has the following advantages:
The De-embedding method of this compound semiconductor device provided by the invention, the reasonable analysis domain structure of On-wafer measurement, have actual physics meaning, intactly seek peace and eliminate possible parasitic effects in earth's surface; Improve the shortcoming that tradition goes embedding method, improve De-embedding bandwidth, ensure that the validity of going embedding degree of accuracy and high-frequency element model and circuit application of more high-frequency range.In addition, compound semiconductor radio-frequency devices De-embedding method provided by the invention, takes into full account from physical resources and characterizes all possible ghost effect, improve precision and the bandwidth of De-embedding, has actual using value.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of the De-embedding method of compound semiconductor device provided by the invention.
Fig. 2 is the De-embedding segmentation schematic diagram according to the compound semiconductor radio-frequency devices of the embodiment of the present invention;
Fig. 3 is the parasitic parameter equivalent electrical circuit of the compound semiconductor radio-frequency devices according to the embodiment of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The invention discloses a kind of De-embedding method of compound semiconductor radio-frequency devices, by the domain structure of reasonable analysis On-wafer measurement, ghost effect is divided into four ingredients, be followed successively by metal pad parasitic parameter, metal interconnection transformational structure parasitic parameter, transmission line parasitic parameter, dorsal pore parasitic parameter.By the cascade connection of matrix, remove metal pad successively, metal interconnection transformational structure, the ghost effect of transmission line and dorsal pore, go to be embedded into intrinsic device input/output port with reference to plane, thus obtain the intrinsic parameters of compound semiconductor radio-frequency devices.
As shown in Figure 1, Fig. 1 is the process flow diagram of the De-embedding method of compound semiconductor device provided by the invention, and the method comprises the following steps:
Step 1: the test structure of analysis of compounds semiconductor devices, the ghost effect that deterministic compound semiconductor devices produces;
Step 2: according to the ghost effect produced, remove ghost effect step by step from outside to inside.
Wherein, the test structure of the semiconductor devices of analysis of compounds described in step 1, the ghost effect that deterministic compound semiconductor devices produces, specifically comprise: the test structure of analysis of compounds semiconductor devices, the ghost effect that deterministic compound semiconductor devices produces is followed successively by from outside to inside: metal pad ghost effect, the ghost effect of metal interconnection transformational structure, transmission line ghost effect and dorsal pore ghost effect.
According to the ghost effect produced described in step 2, remove ghost effect step by step from outside to inside, specifically comprise: by the cascade connection of matrix, remove metal pad ghost effect, the ghost effect of metal interconnection transformational structure, transmission line ghost effect and dorsal pore ghost effect successively from outside to inside, go to be embedded into intrinsic device input/output port with reference to plane, thus obtain the intrinsic parameters of compound semiconductor radio-frequency devices.
Metal pad ghost effect, it is the ghost effect that the metal pad for realizing probes touch produces, comprise the fl transmission line of two metal pads and the ghost effect of backward open circuited transmission line generation, and the ghost effect that the crosstalk capacitance between metal pad produces.The ghost effect of metal interconnection transformational structure, for the ghost effect of metal pad to the metal interconnection transformational structure generation excessive gently of transmission line, metal interconnection transformational structure is made up of lump LC equivalent structure, and the crosstalk capacitance between metal interconnection transformational structure is integrated in other two crosstalk capacitance and goes.Transmission line ghost effect, being the ghost effect that the transmission line exported for connecting intrinsic device produces, comprising the ghost effect of both sides transmission line and the generation of crosstalk capacitance between the two.Dorsal pore ghost effect is the ghost effect that the dorsal pore for realizing common source ground connection produces.
In a preferred embodiment of the invention, compound semiconductor device is generally select the compound semiconductor field effect transistor with radiofrequency characteristics.
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
Fig. 2 is the De-embedding segmentation schematic diagram according to the compound semiconductor radio-frequency devices of the embodiment of the present invention.The reference planes of actual test are REF1, need De-embedding to the input/output port REF2 of intrinsic device, obtain intrinsic device part 14, ghost effect is divided into following several ingredient, for left side metal pad 110 and the right metal pad 111 of probes touch, left side metal interconnection transformational structure 120 and the right metal interconnection transformational structure 121, for connecting the left side transmission line 130 of intrinsic device input and the right transmission line 131 for being connected intrinsic device output, and realize the dorsal pore up and down 150 and 151 of common source ground connection.
Fig. 3 is the parasitic parameter equivalent electrical circuit of the compound semiconductor radio-frequency devices according to the embodiment of the present invention.Ghost effect is made up of following element: the fl transmission line T of metal pad
pwith reverse open circuited transmission line T
op, the LC lump equivalent structure L of left side metal interconnection structure
n1and C
n1, the LC lump equivalent structure L of the right metal interconnection structure
n2and C
n2, for connecting the left side transmission line T that intrinsic device exports
1, for connecting the right transmission line T that intrinsic device exports
2, realize the equivalent dorsal pore inductance L of common source ground connection
b, and two crosstalk capacitance C
ct1and C
ct2.
The actual S parameter obtained of testing is formed according to the relation of abcd matrix cascade by several groups of parasitic parameters and intrinsic device, concrete expression formula as shown in the formula:
Utilize the relation that impedance Z matrix disposal two-port network is connected, utilize the relation of admittance Y matrix disposal two-port network parallel connection, the order removing parasitic parameter from outside to inside is step by step followed successively by: remove metal pad parasitic, remove metal interconnection metoxeny, removal transmission line is parasitic, removes dorsal pore parasitic.The S parameter result finally obtaining intrinsic device as shown in the formula:
The present invention consists of the parasitism of reasonable layout dividing, intactly characterizes and removes ghost effect, can improve the bandwidth sum accuracy of De-embedding, ensures the correctness of intrinsic device S parameter.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a De-embedding method for compound semiconductor device, is characterized in that, comprising:
The test structure of analysis of compounds semiconductor devices, the ghost effect that deterministic compound semiconductor devices produces; And
According to the ghost effect produced, remove ghost effect step by step from outside to inside.
2. the De-embedding method of compound semiconductor device according to claim 1, is characterized in that, the test structure of described analysis of compounds semiconductor devices, the ghost effect that deterministic compound semiconductor devices produces, and specifically comprises:
The test structure of analysis of compounds semiconductor devices, the ghost effect that deterministic compound semiconductor devices produces is followed successively by from outside to inside: metal pad ghost effect, the ghost effect of metal interconnection transformational structure, transmission line ghost effect and dorsal pore ghost effect.
3. the De-embedding method of compound semiconductor device according to claim 2, is characterized in that, the described ghost effect according to producing, and removes ghost effect step by step from outside to inside, specifically comprises:
By the cascade connection of matrix, remove metal pad ghost effect, the ghost effect of metal interconnection transformational structure, transmission line ghost effect and dorsal pore ghost effect successively from outside to inside, go to be embedded into intrinsic device input/output port with reference to plane, thus obtain the intrinsic parameters of compound semiconductor radio-frequency devices.
4. the De-embedding method of compound semiconductor device according to any one of claim 1 to 3, is characterized in that, described compound semiconductor device is the compound semiconductor field effect transistor with radiofrequency characteristics.
5. the De-embedding method of the compound semiconductor device according to Claims 2 or 3, it is characterized in that, described metal pad ghost effect, it is the ghost effect that the metal pad for realizing probes touch produces, comprise the fl transmission line of two metal pads and the ghost effect of backward open circuited transmission line generation, and the ghost effect that the crosstalk capacitance between metal pad produces.
6. the De-embedding method of the compound semiconductor device according to Claims 2 or 3, it is characterized in that, the ghost effect of described metal interconnection transformational structure, for the ghost effect of metal pad to the metal interconnection transformational structure generation excessive gently of transmission line, metal interconnection transformational structure is made up of lump LC equivalent structure, and the crosstalk capacitance between metal interconnection transformational structure is integrated in other two crosstalk capacitance and goes.
7. the De-embedding method of the compound semiconductor device according to Claims 2 or 3, it is characterized in that, described transmission line ghost effect, being the ghost effect that the transmission line exported for connecting intrinsic device produces, comprising the ghost effect of both sides transmission line and the generation of crosstalk capacitance between the two.
8. the De-embedding method of the compound semiconductor device according to Claims 2 or 3, is characterized in that, described dorsal pore ghost effect, is the ghost effect that the dorsal pore for realizing common source ground connection produces.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107167724A (en) * | 2017-06-02 | 2017-09-15 | 厦门市三安集成电路有限公司 | What a kind of small-signal was measured goes embedding method |
| CN110456248A (en) * | 2019-07-29 | 2019-11-15 | 中国电子科技集团公司第五十五研究所 | A kind of gallium nitride device carrier concentration profile analysis method based on arrow net test |
| CN111737937A (en) * | 2020-07-16 | 2020-10-02 | 杰华特微电子（杭州）有限公司 | Modeling method of semiconductor device |
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| CN101943739A (en) * | 2009-07-02 | 2011-01-12 | 台湾积体电路制造股份有限公司 | Method and apparatus of deembedding |
| CN102243275A (en) * | 2011-04-25 | 2011-11-16 | 上海宏力半导体制造有限公司 | Measuring method for parasitic capacitance in capacitance DC (direct current) model |
| CN102543958A (en) * | 2010-12-08 | 2012-07-04 | 台湾积体电路制造股份有限公司 | De-embedding on-wafer devices |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2003098255A1 (en) * | 2002-05-16 | 2003-11-27 | Koninklijke Philips Electronics N.V. | Method for calibrating and de-embedding, set of devices for de-embedding and vector network analyzer |
| CN101943739A (en) * | 2009-07-02 | 2011-01-12 | 台湾积体电路制造股份有限公司 | Method and apparatus of deembedding |
| CN102543958A (en) * | 2010-12-08 | 2012-07-04 | 台湾积体电路制造股份有限公司 | De-embedding on-wafer devices |
| CN102243275A (en) * | 2011-04-25 | 2011-11-16 | 上海宏力半导体制造有限公司 | Measuring method for parasitic capacitance in capacitance DC (direct current) model |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107167724A (en) * | 2017-06-02 | 2017-09-15 | 厦门市三安集成电路有限公司 | What a kind of small-signal was measured goes embedding method |
| CN107167724B (en) * | 2017-06-02 | 2019-08-13 | 厦门市三安集成电路有限公司 | A kind of small measuring signal goes embedding method |
| CN110456248A (en) * | 2019-07-29 | 2019-11-15 | 中国电子科技集团公司第五十五研究所 | A kind of gallium nitride device carrier concentration profile analysis method based on arrow net test |
| CN110456248B (en) * | 2019-07-29 | 2021-09-17 | 中国电子科技集团公司第五十五研究所 | Gallium nitride device carrier concentration distribution analysis method based on vector network test |
| CN111737937A (en) * | 2020-07-16 | 2020-10-02 | 杰华特微电子（杭州）有限公司 | Modeling method of semiconductor device |
| CN111737937B (en) * | 2020-07-16 | 2023-06-23 | 杰华特微电子股份有限公司 | Semiconductor device modeling method |
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