CN109635471A - The flicker noise model and its extracting method of semiconductor devices - Google Patents
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Abstract
The present invention relates to a kind of flicker noise models of semiconductor devices, it is related to semiconductor integrated circuit, the semiconductor devices includes a channel region and an active area, and the length of the channel region is L, and the width of the active area is W, and the semiconductor devices is located in a trap, the trap includes an X-direction and a Y direction, and wherein X-direction is the transverse direction of the trap, and Y direction is the longitudinal direction of the trap, it is characterized in that, the flicker noise model are as follows: Sid=KF (T) * IAF(T)/(Coxe*Leff Lf*Weff Wf*fEF(T)), wherein KF (T), AF (T) and EF (T) they are respectively the function of temperature T, and W is the width of active area, and L is the length of channel region, and f is the frequency of device, T0For room temperature, TC1KF、TC1AF、TC1EF、TC2EF、TC2KF、TC2AF、KFT0、AFT0And EFT0For the parameter closed with temperature T-phase, the flicker noise model of semiconductor devices is made to increase the influence of temperature, the flicker noise of more accurate reaction semiconductor device, applicability is more preferable.
Description
Technical field
The present invention relates to the flicker noise model of a kind of semiconductor integrated circuit more particularly to a kind of semiconductor devices and its
Extracting method.
Background technique
In semiconductor integrated circuit, as the manufacturing process of semiconductor is increasingly advanced, component size is smaller and smaller,
The noise characteristic and its modeling and simulating for influencing the various semiconductor devices of breadboardin and radio-frequency performance more and more cause people's
Pay attention to, the noise characteristic that accurately can comprehensively characterize the minimum unit device of integrated circuit has become industry professional person and exerts
Try hard to pursue the target asked.In Advanced Integrated Circuits, the noise characteristic of device especially flicker noise and its modeling are by increasingly
More attention, it is even more important in especially high performance analog circuit.The parameter of environment and device itself around device is equal
It will affect the flicker noise model of semiconductor devices.However, the flicker noise model of current semiconductor devices can not comprehensively,
The flicker noise of accurate Characterization semiconductor devices.
Summary of the invention
The purpose of the present invention is to provide a kind of flicker noise models of semiconductor devices, and the flashing of semiconductor devices is made to make an uproar
Acoustic model increases the influence of temperature, the flicker noise of more accurate reaction semiconductor device, and applicability is more preferable.
The flicker noise model of semiconductor devices provided by the invention, the flashing for characterizing the semiconductor devices are made an uproar
Sound, the semiconductor devices include a channel region and an active area, and the length of the channel region is L, the width of the active area
For W, and the semiconductor devices is located in a trap, and the trap includes an X-direction and a Y direction, and wherein X-direction is institute
The transverse direction of trap is stated, Y direction is the longitudinal direction of the trap, the flicker noise model are as follows: Sid=KF (T) * IAF(T)/
(Coxe*Leff Lf*Weff Wf*fEF(T)), wherein KF (T), AF (T) and EF (T) are respectively the function of temperature T, and expression formula is as follows:
Wherein, W is the width of active area, and L is the length of channel region, and f is the frequency of device, T0For room temperature, TC1KF、
TC1AF、TC1EF、TC2EF、TC2KF、TC2AF、KFT0、AFT0And EFT0For the parameter closed with temperature T-phase.
The present invention also provides the flicker noise model extraction methods of semiconductor devices, comprising: S1: designing various sizes of device
Part structure；S2: the flicker noise data of measurement device；S3: basic flicker noise model is established；S4: to semiconductor devices
Size and the relevant parameter of component characteristic parameter carry out curve fitting, if fitting is bad, enters S5 and enter if being fitted
S6；S5: modification parameter relevant to dimensions of semiconductor devices and/or component characteristic parameter, and enter S4；S6: it establishes and introduces temperature
The flicker noise model of degree；S7: carrying out curve fitting to the parameter closed with temperature T-phase, if fitting is bad, enters S8, if quasi-
It gets togather, then enters S9；S8: the parameter that modification is closed with temperature T-phase, and enter S7 and S9: semiconductor devices is obtained according to S7
Flicker noise model, and flicker noise model is verified.
Further, step S1 is more specifically designing semiconductor device, and is made active between different semiconductor devices
The length L of the width W in area, channel region are different.
Further, half is measured in step S2 under different dimensions of semiconductor devices and/or under component characteristic parameter
The flicker noise data of conductor device.
Further, in step S2 under the conditions of 25 DEG C of room temperature, under different dimensions of semiconductor devices, voltage and frequency
The flicker noise data of measurement device.
Further, in step S3 based in step S2 under different dimensions of semiconductor devices and/or device property
The flicker noise data of the semiconductor devices measured under parameter establish basic flicker noise model
Sid=f (W, L, f)=KF*IAF/(Coxe*Leff Lf*Weff Wf*fEF)。
Further, if the flicker noise data of step S4 measurement are made an uproar with what is obtained according to basic flicker noise model
Sound data differ by more than or are equal to 10%, then it is assumed that fitting is bad；If measurement flicker noise data with according to basic flashing
The noise data that noise model obtains is differed less than 10%, then it is assumed that is fitted.
Further, the noise data obtained according to basic flicker noise model is by emulating according to basic sudden strain of a muscle
The noise data that bright noise model obtains.
Further, parameter relevant to dimensions of semiconductor devices and/or component characteristic parameter is modified in step S5 is
Departure modification and device according to the flicker noise data of measurement with the noise data obtained according to basic flicker noise model
Part size and/or the relevant parameter of component characteristic parameter.
Further, in step S6 at different temperatures T measurement device flicker noise data, based on basic flashing
Noise model establishes the flicker noise model for introducing temperature.
Further, to TC1 in step S7KF、TC1AF、TC1EF、TC2EF、TC2KF、TC2AF、KFT0、AFT0With EFT0 into
Row curve matching.
Further, the flicker noise data measured in step S7 are obtained with according to the flicker noise model for introducing temperature
Noise data differ by more than or be equal to 10%, then it is assumed that fitting it is bad；If measurement flicker noise data with according to introduce temperature
The noise data that the flicker noise model of degree obtains is differed less than 10%, then it is assumed that is fitted.
Further, the noise data obtained according to the flicker noise model for introducing temperature is by emulating according to introducing
The noise data that the flicker noise model of temperature obtains.
Further, according to the flicker noise data of measurement and the flicker noise model according to introducing temperature in step S8
The parameter that the departure modification of obtained noise data is closed with temperature T-phase.
The flicker noise model of semiconductor devices provided by the invention, by being fitted temperature in the flicker noise model of device
Influence of the T to the flicker noise model of device is spent, novel flashing noise model: S is obtainedid=KF (T) * IAF(T)/(Coxe*Leff Lf*
Weff Wf*fEF(T)), which not only allows for device size, also increases the influence of temperature, introduces temperature phase
The function of pass can be modeled more precisely, and characteristic in the actual circuit of better reaction member improves noise model fitting precision,
More reasonable domain is designed in circuit design to designer, very big help is provided, and innovative noise model of the invention is applicable in
In various types of noise models, keep the innovative noise model applicability more preferable.
Detailed description of the invention
Fig. 1 is the schematic diagram of semiconductor device.
Fig. 2 is the flow chart of the flicker noise model extraction method of the semiconductor devices of one embodiment of the invention.
Specific embodiment
Below in conjunction with attached drawing, clear, complete description is carried out to the technical solution in the present invention, it is clear that described
Embodiment is a part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is general
Logical technical staff's all other embodiment obtained under the premise of not making creative work belongs to what the present invention protected
Range.
Referring to Fig. 1, Fig. 1 is the schematic diagram of semiconductor device.Specifically, as shown in Figure 1, semiconductor devices 100
In in trap 200, semiconductor devices 100 includes channel region 110 and active area 120, and it is device 100 that the width of active area 120, which is W,
Width, the length of channel region 110 is L.Trap 200 includes an X-direction and a Y direction, and wherein X-direction is trap 200
Transverse direction, Y direction are the longitudinal direction of trap 200.The flicker noise model of existing device only accounts for device 100 itself
Parameter, see formula 1:
Sid=f (W, L, f)=KF*IAF/(Coxe*Leff Lf*Weff Wf*fEF) formula 1
Wherein, W is the width of active area, and L is the length of channel region, and f is the frequency of device.
The flicker noise model of existing semiconductor devices is also characterized as being: Sid=f (W, L, f, T), wherein T is partly to lead
The temperature of body device, however flicker noise model above-mentioned at present only considers the shadow of temperature T in its basic device model
It rings, and does not consider under different temperatures, flicker noise under different temperatures, makes an uproar in practical applications to the impact effect of device
Sound is different the impact effect of device, this is also the place of the flicker noise model shortcoming of current semiconductor devices.
In one embodiment of the invention, a kind of flicker noise model of semiconductor devices is provided, in original noise model base
On plinth, function relevant to temperature is introduced, which not only allows for size, also increase the influence of temperature, draw
Enter the relevant function of temperature, can more precisely model, it is quasi- to improve noise model for characteristic in the actual circuit of better reaction member
Precision is closed, more reasonable domain is designed in circuit design to designer and very big help, and innovative noise of the invention is provided
Model is suitable for various types of noise models, keeps the innovative noise model applicability more preferable.
The flicker noise model of semiconductor devices provided by the invention introduces temperature to the shadow of the flicker noise model of device
It rings, the flicker noise model of obtained semiconductor devices is formula 2:
Sid=KF (T) * IAF(T)/(Gaxe*Leff Lf*Weff wf*fEF(T)) formula 2
Wherein, KF (T), AF (T) and EF (T) are respectively the function of temperature T, and expression formula is as follows:
Wherein, W is the width of active area, and L is the length of channel region, and f is the frequency of device, T0For room temperature, TC1KF、
TC1AF、TC1EF、TC2EF、TC2KF、TC2AF、KFT0、AFT0And EFT0For the parameter closed with temperature T-phase, wherein TC1KF、TC1AFWith
TC1EFFor single order temperature coefficient, TC2EF、TC2KFAnd TC2AFFor second-order temperature coefficient.
In this way, the flicker noise model (such as formula 2) of obtained semiconductor devices, in existing device flicker noise model
On the basis of (such as formula 1), the influence of temperature is increased, the relevant function of temperature is introduced, can more precisely model, preferably react
Characteristic in the actual circuit of device improves noise model fitting precision, designs in circuit design more reasonably to designer
Domain provides very big help, and innovative noise model of the invention is suitable for various types of noise models, this is made novel to make an uproar
Acoustic model applicability is more preferable.
In an embodiment of the present invention, a kind of flicker noise model extraction method of semiconductor devices is also provided, specifically
Fig. 2 is seen, Fig. 2 is the flow chart of the flicker noise model extraction method of the semiconductor devices of one embodiment of the invention, such as Fig. 2
It is shown, this method comprises:
S1: various sizes of device architecture is designed.
Specifically, in an embodiment of the present invention, designing semiconductor device 100, and make between different semiconductor devices 100
The length L of the width W of active area, channel region are different.
S2: the flicker noise data of measurement device.
In an embodiment of the present invention, measurement half under different dimensions of semiconductor devices and/or under component characteristic parameter
The flicker noise data of conductor device, wherein component characteristic parameter includes the parameters such as the voltage of semiconductor devices, frequency.Specifically
, under the conditions of 25 DEG C of room temperature, the flicker noise data of measurement device under different dimensions of semiconductor devices, voltage and frequency.
S3: basic flicker noise model is established.
Specifically, in an embodiment of the present invention, based in step S2 under different dimensions of semiconductor devices and/or device
The flicker noise data of the semiconductor devices measured under part characterisitic parameter establish basic flicker noise model Sid=f (W, L, f)
=KF*IAF/(Coxe*Leff Lf*Weff Wf*fEF)。
S4: carrying out curve fitting to parameter relevant to dimensions of semiconductor devices and component characteristic parameter, if fitting is bad,
Then enter S5, if being fitted, enters S6.
Specifically, in an embodiment of the present invention, if the flicker noise data of measurement with according to basic flicker noise mould
The noise data that type obtains differs by more than or is equal to 10%, then it is assumed that fitting is bad；If the flicker noise data and basis of measurement
The noise data that basic flicker noise model obtains is differed less than 10%, then it is assumed that is fitted.
In an embodiment of the present invention, the noise data that the basic flicker noise model of above-mentioned basis obtains is to pass through emulation
The noise data obtained according to basic flicker noise model.
S5: modification parameter relevant to dimensions of semiconductor devices and/or component characteristic parameter, and enter S4.
It is even fitted bad, is then made an uproar according to the flicker noise data of measurement with what is obtained according to basic flicker noise model
The departure of sound data modifies parameter relevant to device size and/or component characteristic parameter.
S6: the flicker noise model (such as formula 2) for introducing temperature is established.
Specifically, in an embodiment of the present invention, the flicker noise data of measurement device at different temperatures T are based on base
This flicker noise model foundation introduces the flicker noise model (such as formula 2) of temperature.
S7: carrying out curve fitting to the parameter closed with temperature T-phase, if fitting is bad, enters S8, if being fitted, into
Enter S9.
More specifically for TC1KF、TC1AF、TC1EF、TC2EF、TC2KF、TC2AF、KFT0、AFT0And EFT0It is quasi- to carry out curve
It closes.Specifically, in an embodiment of the present invention, the flicker noise data of measurement are obtained with according to the flicker noise model for introducing temperature
To noise data differ by more than or be equal to 10%, then it is assumed that fitting it is bad；If measurement flicker noise data with according to introducing
The noise data that the flicker noise model of temperature obtains is differed less than 10%, then it is assumed that is fitted.In an embodiment of the present invention,
The above-mentioned noise data obtained according to the flicker noise model for introducing temperature is by emulating according to the flicker noise for introducing temperature
The noise data that model obtains.
S8: the parameter that modification is closed with temperature T-phase, and enter S7.
More specifically, if fitting is bad, according to the flicker noise data of measurement and the flicker noise according to introducing temperature
The parameter that the departure modification for the noise data that model obtains is closed with temperature T-phase.
S9: the flicker noise model (such as formula 2) of semiconductor devices is obtained according to S7, and flicker noise model is tested
Card.
Such as by taking MOSFET as an example, is measured first according to the wafer that the domain of design comes out, measure different temperature
Such as the noise data needed at -40 DEG C, -15 DEG C, 25 DEG C, 85 DEG C, 125 DEG C.Then measurement data is analyzed, it first can be right
The data of the lower 25 DEG C of measurements of normal temperature condition, adjust parameter relevant to device size and component characteristic parameter.Then immobilising device
Size and the relevant parameter of component characteristic parameter obtain parameter relevant to temperature at different temperature, i.e., adjustment with temperature
Spend relevant parameter.
In conclusion by being fitted temperature T in the flicker noise model of device to the shadow of the flicker noise model of device
It rings, obtains novel flashing noise model: Sid=KF (T) * IAF(T)/(Goxe*Left Lf*Weff wf*fEF(T)), the innovative noise model
Device size is not only allowed for, the influence of temperature is also increased, the relevant function of temperature is introduced, can more precisely model, more preferably
Reaction member actual circuit in characteristic, improve noise model fitting precision, designed more in circuit design to designer
Reasonable domain provides very big help, and innovative noise model of the invention is suitable for various types of noise models, makes this
Innovative noise model applicability is more preferable.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (14)
1. a kind of flicker noise model of semiconductor devices, described partly to lead for characterizing the flicker noise of the semiconductor devices
Body device includes a channel region and an active area, and the length of the channel region is L, and the width of the active area is W, and described half
Conductor device is located in a trap, and the trap includes an X-direction and a Y direction, and wherein X-direction is the transverse direction side of the trap
To Y direction is the longitudinal direction of the trap, which is characterized in that the flicker noise model are as follows:
Sid=KF (T) * IAF(T)/(Coxe*Leff Lf*Weff Wf*fEF(T))
Wherein, KF (T), AF (T) and EF (T) are respectively the function of temperature T, and expression formula is as follows:
Wherein, W is the width of active area, and L is the length of channel region, and f is the frequency of device, T0For room temperature, TC1KF、TC1AF、
TC1EF、TC2EF、TC2KF、TC2AF、KFT0、AFT0And EFT0For the parameter closed with temperature T-phase.
2. the flicker noise model extraction method of semiconductor devices described in claim 1 characterized by comprising
S1: various sizes of device architecture is designed；
S2: the flicker noise data of measurement device；
S3: basic flicker noise model is established；
S4: carrying out curve fitting to parameter relevant to dimensions of semiconductor devices and component characteristic parameter, if fitting is bad, into
Enter S5, if being fitted, enters S6；
S5: modification parameter relevant to dimensions of semiconductor devices and/or component characteristic parameter, and enter S4；
S6: the flicker noise model for introducing temperature is established；
S7: carrying out curve fitting to the parameter closed with temperature T-phase, if fitting is bad, enters S8, if being fitted, enters S9；
S8: the parameter that modification is closed with temperature T-phase, and enter S7, and
S9: the flicker noise model of semiconductor devices is obtained according to S7, and flicker noise model is verified.
3. the flicker noise model extraction method of semiconductor devices according to claim 2, which is characterized in that step S1 is more
It is specifically designing semiconductor device, and makes the width W of the active area between different semiconductor devices, the length L of channel region is different.
4. the flicker noise model extraction method of semiconductor devices according to claim 2, which is characterized in that in step S2
The flicker noise data of semiconductor devices are measured under different dimensions of semiconductor devices and/or under component characteristic parameter.
5. the flicker noise model extraction method of semiconductor devices according to claim 4, which is characterized in that in step S2
Under the conditions of 25 DEG C of room temperature, the flicker noise data of measurement device under different dimensions of semiconductor devices, voltage and frequency.
6. the flicker noise model extraction method of semiconductor devices according to claim 4, which is characterized in that in step S3
Flashing based on the semiconductor devices measured under different dimensions of semiconductor devices and/or under component characteristic parameter in step S2
Noise data establishes basic flicker noise model
Sid=f (W, L, f)=KF*IAF/(Coxe*Leff Lf*Weff Wf*fEF)。
7. the flicker noise model extraction method of semiconductor devices according to claim 2, which is characterized in that if step S4
The flicker noise data of measurement with differed by more than according to the noise data that basic flicker noise model obtains or be equal to 10%, then
Think to be fitted bad；If the flicker noise data of measurement differ small with the noise data obtained according to basic flicker noise model
In 10%, then it is assumed that be fitted.
8. the flicker noise model extraction method of semiconductor devices according to claim 7, which is characterized in that according to basic
The obtained noise data of flicker noise model be by emulating the noise data obtained according to basic flicker noise model.
9. the flicker noise model extraction method of semiconductor devices according to claim 7, which is characterized in that in step S5
Modifying parameter relevant to dimensions of semiconductor devices and/or component characteristic parameter is the flicker noise data and basis according to measurement
The departure modification for the noise data that basic flicker noise model obtains is relevant to device size and/or component characteristic parameter
Parameter.
10. the flicker noise model extraction method of semiconductor devices according to claim 2, which is characterized in that step S6
In at different temperatures T measurement device flicker noise data, the sudden strain of a muscle of temperature is introduced based on basic flicker noise model foundation
Bright noise model.
11. the flicker noise model extraction method of semiconductor devices according to claim 2, which is characterized in that step S7
In to TC1KF、TC1AF、TC1EF、TC2EF、TC2KF、TC2AF、KFT0、AFT0And EFT0It carries out curve fitting.
12. the flicker noise model extraction method of semiconductor devices according to claim 11, which is characterized in that step S7
The flicker noise data of middle measurement differ by more than or are equal to the noise data obtained according to the flicker noise model for introducing temperature
10%, then it is assumed that fitting is bad；If the flicker noise data of measurement are made an uproar with what is obtained according to the flicker noise model for introducing temperature
Sound data are differed less than 10%, then it is assumed that are fitted.
13. the flicker noise model extraction method of semiconductor devices according to claim 12, which is characterized in that according to drawing
Entering the noise data that the flicker noise model of temperature obtains is to be obtained by emulating according to the flicker noise model for introducing temperature
Noise data.
14. the flicker noise model extraction method of semiconductor devices according to claim 12, which is characterized in that step S8
The middle flicker noise data according to measurement and the departure of the noise data obtained according to the flicker noise model for introducing temperature are repaired
Change the parameter closed with temperature T-phase.
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| CN113095037A (en) * | 2021-03-30 | 2021-07-09 | 上海华力微电子有限公司 | MOS device flicker noise model and extraction method |
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Application publication date: 20190416 |