CN104716065B - Capacitance-voltage characteristic correction method for metal oxide semiconductor field-effect transistor - Google Patents
Capacitance-voltage characteristic correction method for metal oxide semiconductor field-effect transistor Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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Abstract
The invention discloses a capacitance-voltage characteristic correction method for a metal oxide semiconductor field-effect transistor. According to the method, at first, capacitance-voltage characteristic testing at different frequencies is carried out on the metal oxide semiconductor field-effect transistor; secondly, according to the characteristic that series resistance values R in a capacitance-voltage testing circuit of the metal oxide semiconductor field-effect transistor under the different input voltage signal frequency conditions are the same, a new correction model is set up, and model parameters are extracted to obtain a correction curve. The capacitance-voltage characteristic correction method for the metal oxide semiconductor field-effect transistor aims at the series resistance effect, only two sets of frequencies and testing capacitances corresponding to the frequencies need to be considered for the model parameters, the actual capacitance-voltage characteristic curve can be corrected without knowing structural parameters of a device, and the application range is wide; the method makes up the defect that due to the fact that a traditional model can not calculate the series resistance values R accurately, the actual capacitance-voltage characteristic curve can not be correct accurately.
Description
Technical field
The invention belongs in microelectric technique, semiconductor device reliability field is in particular, of the invention to provide a kind of
For the mos field effect transistor capacitance-voltage characteristics modification method of series resistance effect.
Background technology
Mos field effect transistor (Metal Oxide Semiconductor field effect
Transistor, abbreviation MOSFET) it is important devices in the super large-scale integration such as microprocessor and semiconductor memory.
Mos field effect transistor is based on semiconductor planar technique, with thermal oxide, evaporation on " cleaning " silicon chip
It is prepared from the method such as photoetching, as shown in Fig. 2 its structure is mainly made up of metal, insulating barrier and semiconductor, it is similar to
In the plate condenser that metal and medium are formed.But, due to the charge density in semiconductor than metal in it is much smaller, so
Charging charge has certain thickness (- micron dimension) in the space-charge region that semiconductor surface is formed, rather than in metal that
Sample, only concentrates in a thin layer (~0.1nm).The thickness of semiconductor surface space-charge region changes with bias, so metal
Oxide semiconductor field effect transistor electric capacity is differential capacitance.
Q in formula 2GIt is the surface density of charge on metal electrode, A is electrode area.
When MOSFET structure electrical property is analyzed, often assume there is a kind of preferable metal
Oxide semiconductor field effect transistor structure is present.It meets following condition：(1) work function difference is between metal and semiconductor
Zero；(2) in insulating barrier (SiO2) in there is no electric charge；(3)SiO2With at interface do not exist interfacial state.
Preferable MOSFET structure is identical with practical structures in shape.At this
Biasing V in individual structureGWhen, a part is in drop in Si/SiO2On, it is denoted as Vox；Part drop is in semiconductor surface space charge
Area, is denoted as Vs, i.e.,
VG=Vox+Vs(formula 3)
VsIt is called surface potential.Because it is contemplated that be ideal situation, Si/SiO2In there is no any electric charge, semiconductor surface
Amount of charge on semiconductor surface space-charge region electric charge and metal electrode is equal, symbol is conversely, have
|Qsc|=| QG| (formula 4)
Q in formulascIt is semiconductor surface space-charge region surface density of charge.Formula (3), (4) are substituted into formula (2), is obtained
Formula (5) shows mos field effect transistor electric capacity by CoxAnd CsIt is in series, its equivalent circuit
As shown in Figure 3.Wherein CoxIt is with SiO2It is the oxidation layer capacitance of medium, its numerical value is not with VGChange；CsIt is empty semiconductor surface
Between area's electric capacity, its numerical value is with VGChange, therefore
In formula 6, ε0It is permittivity of vacuum, εoxIt is oxide dielectric constant, doxIt is samples devices oxidated layer thickness.
Mos field effect transistor circuit production and develop, metal-oxide semiconductor (MOS)
The capacitance-voltage measurement of field-effect transistor is particularly important process monitoring means of testing, is also device parameters analysis
With the effective tool of reliability consideration.Generally by the testing capacitor maximum of electric metal oxide semiconductor field effect transistor
Estimate the thickness of gate dielectric film；Substrate doping density is determined or as ion implantation technology by its normalized position of minimum capacitance
Monitoring mode；The charge density of effective oxide is determined by its flat-band voltage；Substrate doping section is determined by slope of a curve, it is right
In Uniform Doped substrate, slope of a curve can also reflect the situation of interface trap；Few son is estimated by the deep degree of exhaustion of curve
Generation time；Delayed capacitance-voltage curve compares with preferable capacitance-voltage curve can estimate that interface trap, room temperature are movable
Electric charge.In addition, high frequency capacitance-voltage tester coordinates quasi static test, can be with quantitative analysis Si/SiO2The energy of interface trap point
Cloth；Trap, the movable charge in oxide can be analyzed with other stress test (as heated, power-up) combinations.But these points
Analysis test must be only on the basis of the high frequency capacitance-voltage characteristic of accurate measurement mos field effect transistor
Effectively.
As process monitoring, both wished that test structure was accurately credible, it is also desirable to which sample making is simple.However, real process
In often due to sample preparation it is improper or test etc. reason, introduce parasitic antenna.Generally can mainly be contacted with grid by probe
The influence of resistance and cause mos field effect transistor capacitance-voltage characteristics test circuit in introduce series electrical
Resistance R.Although noticing these problems in preparation and test process, series resistance can't in many cases reached
The degree ignored.The introducing of series resistance can make the electric capacity C of testmLess than the electric capacity C of testing sample, lead to not accurately comment
Estimate the characteristic of device.Therefore, capacitance-voltage curve needs first to be modified it before application.
Series resistance effect present in capacitance-voltage measurement for mos field effect transistor,
Conventional correction model is at present：
Wherein, the series resistance in sampleω is angular frequency, and C is the actual capacitance of sample, Ca
It is the testing capacitor of accumulation area, CmIt is testing capacitor, CoxIt is the oxidation layer capacitance of sample.Using formula 8 to testing capacitor CmCarry out
Correct one by one, obtain the capacitance-voltage data discrete point of mos field effect transistor.The model is counted in amendment
During calculation, it is necessary first to which testing capacitor Ca and sample electric capacity according to accumulation area (as aoxidize layer capacitance Cox) obtain series electrical
Hinder the value of R；Next needs the value of the sign before radical sign in judgement formula 8.For metal oxide semiconductor field effect transistor
Pipe, because its electric capacity is with bias variations, when testing capacitor maximum is oxidation stratification layer capacitance Cox≤C0 When, formula
Negative sign is taken before 8 radical signs, works as Cox>C0When, CmThere is peak value (C in-V curve distortions, testing capacitorm)max(maximum of testing capacitor,
(Cm)max=1/2C0), in the accumulation area side of peak value, positive sign is taken before the radical sign in formula 8, and then take negative sign in depletion region side.
Calculated using this correction model, its process is relatively complicated.Not only need using gate electrode area A and oxidation thickness
Degree doxExact value calculate oxidation layer capacitance Cox, and then the value of series resistance R is calculated, and also needed in calculating process
Will oxidation layer capacitance CoxWith C0Value be compared, so as to take positive sign or negative sign before judging the radical sign of formula 8.In addition, calculating oxidation
Layer capacitance CoxWhen, gate electrode area A and oxidated layer thickness doxValue and actual capacitance structural parameters can also exist it is certain by mistake
Difference, causes fair curve to there is larger error.Up to now, the modification method of neither one standard can accurately correct out circuit
In when there is series resistance effect, the actual capacitance-voltage response of mos field effect transistor.
The content of the invention
For the shortcoming of existing method, the present invention provides a kind of mos field effect transistor electric capacity-electricity
Pressure characteristic revision method, the method is simple and easy to apply, and accuracy rate is high, and can make up can not accurately calculate oxidation layer capacitance CoxAnd series connection
The value of resistance R, and then cannot accurately correct out mos field effect transistor actual capacitance-voltage response
Defect.
The present invention is adopted the following technical scheme that：
A kind of mos field effect transistor capacitance-voltage characteristics modification method, it is characterised in that
Step 1, two different input voltages for obtaining mos field effect transistor grid to be measured respectively
Signal frequency is f1And f2The C-V characteristics of corresponding mos field effect transistor to be measured and
Capacitance-voltage characteristics test data；
Step 2, the capacitance-voltage characteristics of the mos field effect transistor to be measured obtained to step 1 are bent
Line and capacitance-voltage characteristics test data are modified, and obtain revised actual capacitance-voltage data discrete point, and accordingly
Revised C-V characteristics are depicted as, the modification method is as correction model, to capacitance-voltage characteristics with formula 1
Electric capacity in test data is modified, and the correction model is：
Wherein C is mos field effect transistor actual capacitance, f1And f2It is added when respectively testing twice
The frequency of voltage signal, Cm1The frequency for being input voltage signal is f1When measured electric capacity, Cm2It is the frequency of input voltage signal
Rate is f2Measured electric capacity.
Compared with prior art, the invention has the advantages that：
The present invention is based on the mos field effect transistor capacitance-voltage characteristics electricity that there is series resistance R
Drive test tries equivalent-circuit model, using under different input voltage signal frequency conditions, metal oxide semiconductor field effect transistor
The characteristics of series resistance R values are identical in pipe capacitance-voltage characteristics test circuit, establishes a set of new for series resistance effect
Mos field effect transistor capacitance-voltage characteristics modification method.
For the mos field effect transistor capacitance-voltage characteristics modification method of series resistance effect
In, the correction model of its actual capacitance C：
Wherein, f1And f2The frequency of added voltage signal, C when respectively testing twicem1It is the frequency of input voltage signal
It is f1When measured electric capacity, Cm2For the frequency of input voltage signal is f2When testing capacitor.
Specific advantage of the invention is as follows：
(1) correction result in modification method of the present invention is accurate.The correction model (formula 1) of electric capacity in modification method of the present invention
It is that mos field effect transistor (MOS) capacitance-voltage is special based under different input voltage signal frequency conditions
The characteristics of series resistance R values are identical in property test circuit, model parameter is obtained using traditional test methods：Two class frequency f1、f2Under
Testing capacitor Cm1、Cm2, then by frequency f1、f2With testing capacitor Cm1、Cm2Bring into and accurate reality is can obtain in formula 1
Electric capacity C.Compared with conventional test methodologies, series resistance R and device architecture parameter, amendment are not included in correction model of the invention
During both need not estimate oxidation layer capacitance C using device gate electrode area and oxidated layer thicknessoxThe value of (formula 9), also not
Need to utilize and aoxidize layer capacitance CoxWith accumulation area testing capacitor CaThe value of series resistance R (formula 10) is calculated, avoiding problems biography
Main source of error in system modification method：Inaccurate are estimated to structural parameters such as device gate electrode area and oxidated layer thickness,
Cause oxidation layer capacitance CoxEstimated value and its actual value between can there is error, and then bring the amendment of capacitance-voltage curve
Error.Therefore, modification method of the present invention makes correction result more accurate.
(2) modification method of the invention has universality.The use of traditional modification method is built upon being fully understood by device
Structural parameters such as samples devices gate electrode area, device oxidated layer thickness on the basis of, with certain use limitation.
And this modification method only need to be measured using conventional measuring technology the capacitance-voltage measurement data under two groups of different frequencies from
Scatterplot, by frequency f1、f2With testing capacitor Cm1、Cm2Bring into and accurate actual capacitance-electricity is can be obtained by correction model (formula 1)
Pressure characteristic curve.The parameter being related in correction model only has frequency and testing capacitor, and the structural parameters such as device of device
Gate electrode area and device oxidated layer thickness etc. are not involved in whole makeover process.Therefore, for can not be accurately true
The device of fixed its structural parameters, such as mos field effect transistor, diode capacitance, can be by the amendment
Method amendment goes out the actual C-V characteristics of device.
(3) modification method model parameter of the invention is few, and calculating process is simple.The amendment of electric capacity in modification method of the present invention
Model (formula 1) is that mos field effect transistor (MOS) is electric based under different input voltage signal frequency conditions
The characteristics of series resistance R values are identical in appearance-voltage characteristic test circuit, compared with traditional modification method, amendment mould of the invention
Model parameter in type only has frequency f1、f2With testing capacitor Cm1、Cm2, not comprising series resistance R and device architecture parameter, utilize
Traditional test methods can be obtained by these parameters.Then by frequency f1、f2With testing capacitor Cm1、Cm2Bring amendment of the invention into
After model (formula 1), it is only necessary to calculate actual capacitance C by carrying out the simple arithmetic of a step, finally using correcting out
Actual capacitance discrete point is that can obtain actual capacitance-voltage curve.This modification method needs in avoiding conventional model (formula 11)
Formula 9,10 is brought into using device gate electrode area and oxidated layer thickness calculate oxidation layer capacitance CoxWith the value of series resistance R,
And by comparing oxidation layer capacitance CoxWithSize judge the sign in conventional model (formula 11) before radical sign
The problem of value.Modification method model parameter of the invention is few, and the process of calculating actual capacitance can be made simpler, corrects out
Result it is more accurate.
Wherein, R is series resistance, and ω is angular frequency, and C is the actual capacitance of sample, CaIt is the testing capacitor of accumulation area, Cm
It is testing capacitor, CoxIt is the oxidation layer capacitance of sample, ε0It is permittivity of vacuum, εoxIt is oxide dielectric constant, doxIt is sample device
Part oxidated layer thickness, A is device gate electrode area.
Brief description of the drawings
Fig. 1 is to set up the mos field effect transistor capacitance-voltage characteristics for series resistance effect
The flow chart of modification method.
Fig. 2 is MOSFET structure figure.
Fig. 3 is the equivalent capacity circuit diagram of mos field effect transistor.
Fig. 4 is there is series resistance R in mos field effect transistor capacitance-voltage characteristics test circuit
When circuit under test connection figure.
Fig. 5 is there is series resistance R in mos field effect transistor capacitance-voltage characteristics test circuit
When circuit under test simplification figure.
When there is series resistance R in Fig. 6 mos field effect transistor capacitance-voltage characteristics test circuits
Test circuit isoboles.
Fig. 7 is input voltage sweeps to -5V from+5V, and scanning step is 0.1V, frequency be respectively 10KHZ, 50KHZ and
The capacitance-voltage characteristics test curve of the mos field effect transistor under the conditions of 100KHZ.
Fig. 8 is partly led according to metal oxide under the conditions of two class frequencys respectively 10KHZ and 50KHZ, 50KHZ and 100KHZ
Body field-effect transistor capacitance-voltage measurement data, using the revised C-V characteristics of correction model.Wherein, profit
It is very high with the C-V characteristics fitting precision after two groups of data corrections.
Specific embodiment：
A kind of mos field effect transistor capacitance-voltage characteristics modification method, it is characterised in that
Step 1, two different input voltages for obtaining mos field effect transistor grid to be measured respectively
Signal frequency is f1And f2The C-V characteristics of corresponding mos field effect transistor to be measured and
Capacitance-voltage characteristics test data；
Step 2, the capacitance-voltage characteristics of the mos field effect transistor to be measured obtained to step 1 are bent
Line and capacitance-voltage characteristics test data are modified, and obtain revised actual capacitance-voltage data discrete point, and accordingly
Revised C-V characteristics are depicted as, the modification method is as follows：With formula 1 as correction model, to capacitance-voltage
Electric capacity in characteristic test data is modified, and the correction model is：
Wherein C is mos field effect transistor actual capacitance, f1And f2It is added when respectively testing twice
The frequency of voltage signal, Cm1The frequency for being input voltage signal is f1When measured electric capacity, Cm2It is the frequency of input voltage signal
Rate is f2Measured electric capacity.
During C-V characteristics revised according to the revised discrete point-rendering of actual capacitance-voltage data, can
Go out revised C-V characteristics with using Origin Software on Drawing, so as to finally accurately correct out metal oxide
Actual capacitance-the voltage response of semiconductor field effect transistor.
The present invention can obtain mos field effect transistor to be measured using any one of prior art
C-V characteristics and capacitance-voltage characteristics test data, the present embodiment can then choose one of them, i.e.,：Gold to be measured
Belong to the C-V characteristics of oxide semiconductor field effect transistor and the acquisition side of capacitance-voltage characteristics test data
Method is as follows：C-V characteristics and the capacitance-voltage characteristics test of mos field effect transistor to be measured
The acquisition methods of data are as follows：
Step 1.1, the laboratory apparatus of the capacitance-voltage characteristics test of preparation mos field effect transistor
And sample：Laboratory apparatus mainly includes：Probe station, Agilent E4980A precision LCR measurement tables, computer；
Step 1.2, mos field effect transistor to be measured is selected by probe, by metal oxide half
The grid G connection Agilent E4980A precision LCR measurement table input ports of conductor field-effect transistor, the substrate B of device connects survey
The ground port (GND) of scale, the source electrode and drain electrode floating of device；
Step 1.3, Agilent E4980A precision LCR measurement tables are set to the input voltage parameter of device grids, voltage is applied
Add mode is that, by malleation scanning to negative pressure, scanning voltage scope is+5V to -5V, and scanning step is 0.1V, and input voltage signal is frequently
Rate is f1, opening measurement apparent source carries out the capacitance-voltage characteristics test of mos field effect transistor, test
During monitor and C-V characteristics and preserve capacitance-voltage characteristics test data；
Step 1.4, holding mos field effect transistor sample, experimental provision connection and other test-strips
Part is constant, is f only by the frequency shift of input voltage signal in step 1.32, then carry out and step 1.3 identical electric capacity-electricity
Pressure characteristic test, monitors C-V characteristics and preserves capacitance-voltage characteristics test data in test process.
The present invention is based on following principle：
For the amendment of the mos field effect transistor C-V characteristics of series resistance effect
For, the modification method in the present invention is based on the metal oxide semiconductcor field effect under different input voltage signal frequency conditions
What the characteristics of answering the value of series resistance R in transistor capacitance-voltage characteristic test circuit identical proposed, and the difficult point that model is set up
It is to set up the derivation formula (formula 12) of series resistance R and equation models (formula 13) are set up according to this formula：
Firstly the need of set up there is series resistance effect in circuit when, mos field effect transistor test
Electric capacity CmWith the relational model of actual capacitance C.When there is series resistance R in mos field effect transistor circuit
When, its circuit under test figure, circuit under test simplification figure and test equivalent circuit diagram are as shown in accompanying drawing 4,5,6, it can be seen that in reality
Mos field effect transistor electric capacity C connects with series resistance R in circuit, and measuring instrument is in measurement electric capacity
When be with parallel equivalent electric capacity CmWith parallel equivalent conductance GmForm tested.There is following relation：
Ym=Gm+jωCm
Wherein, R is the series resistance in MOS memory capacitance-voltage characteristics circuit, YmIt is equivalent
The admittance of circuit, ZmIt is the impedance of equivalent circuit, Gm is parallel equivalent conductance, and ω is angular frequency.
Testing capacitance C and testing capacitor C can be drawn according to formula 14mBetween relation：
The derivation formula of series resistance R as shown in Equation 12 can be derived according to formula 15.
According under different input voltage signal frequency conditions, mos field effect transistor capacitance-voltage
The characteristics of series resistance R values are identical in characteristic test circuit, can set up out equation models as shown in Equation 13, and according to formula 13
The correction model of electric capacity can be obtained：
Wherein f1And f2The frequency of added voltage signal, ω when respectively testing twice1And ω2It is angular frequency, Cm1It is input
Voltage signal frequency is f1When the electric capacity that measures, Cm2It is input voltage signal frequency f2Under the conditions of testing capacitor.This amendment side
The determination of the model parameter in method, can be by carrying out different input voltage letters to mos field effect transistor
Capacitance-voltage characteristics test under number frequency, so as to obtain input voltage signal frequency under the conditions of f, scanning voltage is corresponding
Testing capacitor CmDiscrete point.
F is respectively according to signal frequency1、f2Under the conditions of mos field effect transistor capacitance-voltage
Characteristic test data, utilize set up correction model (formula 1), calculate revised capacitance-voltage discrete points data, and use tricks
Software in calculation machine depicts revised C-V characteristics.So as to accurately correct out with series resistance effect
The actual C-V characteristics of mos field effect transistor.
Below in conjunction with the accompanying drawings come illustrate we for series resistance effect N-type substrate metal oxide semiconductcor field effect
Answer the makeover process and result of transistor capacitance-voltage response：
Experimental facilities：The mos field effect transistor of N-type substrate, probe station, Agilent E4980A essences
Close LCR measurement tables, wire, computer.It is laboratory and often uses test equipment, low cost method is simple and easy to apply.
Step 1, prepare mos field effect transistor capacitance-voltage characteristics test laboratory apparatus and
Sample.Laboratory apparatus mainly includes：Probe station, Agilent E4980A precision LCR measurement tables, computer.Sample chooses metal oxygen
Compound semiconductor field effect transistor；
Step 2, this experiment mos field effect transistor sample to be measured is selected by probe, by device
Grid G connects the input port of Agilent E4980A precision LCR measurement tables, and the substrate B of device connects the ground port of measurement table
(GND), the source electrode of device and drain electrode floating；
Step 3, Agilent E4980A precision LCR measurement tables are set to the input voltage parameter of device grids, voltage applying
Mode is that, by malleation scanning to negative pressure, scanning voltage scope is+5V to -5V, and scanning step is 0.1V, input voltage signal frequency
It is f1.Opening measurement apparent source carries out the capacitance-voltage characteristics test of mos field effect transistor, tests
C-V characteristics are monitored in journey and data are preserved；
Step 4, holding mos field effect transistor sample, experimental provision connection and other test conditions
It is constant, it is f only by the frequency shift of input voltage signal in step 32, then carry out and step 3 identical capacitance-voltage characteristics
Test, monitors capacitance-voltage curve and preserves data in test process；
Step 5, in mos field effect transistor capacitance-voltage characteristics test circuit exist series connection
The situation of electricresistance effect, based under different input voltage signal frequency conditions, mos field effect transistor is electric
The characteristics of series resistance R values are identical in appearance-voltage characteristic test circuit (formula 16), builds metal oxide semiconductor field-effect brilliant
The correction model (formula 1) of body pipe actual capacitance C：
Wherein R is the series resistance in mos field effect transistor capacitance-voltage measurement circuit, f1With
f2The frequency of added voltage signal, ω when respectively testing twice1And ω2It is frequency f1And f2Corresponding angular frequency, Cm1It is input
The frequency of voltage signal is f1When measured electric capacity, Cm2For the frequency of input voltage signal is f2When testing capacitor；
Step 6, the metal oxide semiconductor field-effect being respectively according to signal frequency under the conditions of 10KHZ and 50KHZ are brilliant
The capacitance-voltage characteristics test data of body pipe, utilizes set up correction model (formula 1) to calculate revised capacitance-voltage number
According to discrete point, the Origin Software on Drawing in computer is recycled to go out revised C-V characteristics；
In step 7, set-up procedure 6 set up model file in model parameter, according to signal frequency be respectively 50KHZ and
The capacitance-voltage characteristics test data of the mos field effect transistor under the conditions of 100KHZ, using being set up
Correction model (formula 1) calculate revised capacitance-voltage data discrete point, recycle the Origin Software on Drawing in computer
Go out revised C-V characteristics.Accompanying drawing 8 be according to two class frequencys respectively 10KHZ and 50KHZ, 50KHZ and
Mos field effect transistor capacitance-voltage measurement data under the conditions of 100KHZ, after correction model amendment
C-V characteristics.As can be seen that using the C-V characteristics fitting precision after two groups of data corrections very
Height, can verify that modification method of the invention can accurately correct out the actual electricity of mos field effect transistor
Appearance-voltage response.
Those skilled in the art do not depart from essence of the invention and spirit, can have various deformation scheme to realize the present invention,
Preferably feasible embodiment of the invention is the foregoing is only, not thereby limits to interest field of the invention, it is all with this
The equivalence changes that accompanying drawing content shown in invention book is made, are both contained within interest field of the invention.
Claims (2)
1. a kind of mos field effect transistor capacitance-voltage characteristics modification method, it is characterised in that
Step 1, two different input voltage signals for obtaining mos field effect transistor grid to be measured respectively
Frequency is f1And f2The C-V characteristics and electric capacity of corresponding mos field effect transistor to be measured-
Voltage characteristic test data；
Step 2, to step 1 obtain mos field effect transistor to be measured C-V characteristics and
Capacitance-voltage characteristics test data is modified, and obtains revised actual capacitance-voltage data discrete point, and draw accordingly
Into revised C-V characteristics；
The modification method is, as correction model, the electric capacity in capacitance-voltage characteristics test data to be modified with formula 1, institute
Stating correction model is：
Wherein C is mos field effect transistor actual capacitance, f1And f2When institute's making alive is respectively tested twice
The frequency of signal, Cm1The frequency for being input voltage signal is f1When measured electric capacity, Cm2The frequency for being input voltage signal is
f2Measured electric capacity.
2. mos field effect transistor capacitance-voltage characteristics modification method according to claim 1, its
It is characterised by, the C-V characteristics and capacitance-voltage characteristics of mos field effect transistor to be measured are surveyed
The acquisition methods for trying data are as follows：
Step 1.1, the laboratory apparatus and sample of the capacitance-voltage characteristics test of preparation mos field effect transistor
Product：Laboratory apparatus mainly includes：Probe station, Agilent E4980A precision LCR measurement tables, computer；
Step 1.2, mos field effect transistor to be measured is selected by probe, by metal-oxide semiconductor (MOS)
The grid G connection Agilent E4980A precision LCR measurement table input ports of field-effect transistor, the substrate B of device connects measurement table
Ground port (GND), the source electrode of device and drain electrode floating；
Step 1.3, Agilent E4980A precision LCR measurement tables are set to the input voltage parameter of device grids, voltage applying side
Formula is that, by malleation scanning to negative pressure, scanning voltage scope is+5V to -5V, and scanning step is 0.1V, and input voltage signal frequency is
f1, opening measurement apparent source carries out the capacitance-voltage characteristics test of mos field effect transistor, test process
Middle monitoring C-V characteristics simultaneously preserve capacitance-voltage characteristics test data；
Step 1.4, holding mos field effect transistor sample, experimental provision connection and other test conditions are not
Become, be f only by the frequency shift of input voltage signal in step 1.32, then carry out special with step 1.3 identical capacitance-voltage
Property test, monitored in test process and C-V characteristics and preserve capacitance-voltage characteristics test data.
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