CN107341305B - Schottky diode accurate modeling method based on millimeter wave ultra-low power application - Google Patents
Schottky diode accurate modeling method based on millimeter wave ultra-low power application Download PDFInfo
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Abstract
The invention discloses a Schottky diode accurate modeling method based on millimeter wave ultra-low power application in the diode modeling field, which comprises the following steps: 1) simplifying a circuit, adjusting the bias voltage range, enabling the real part impedance of the equivalent circuit formed by parallel connection of Rj and Cj to be far larger than Rs, and enabling the parallel connection of Cfp and Cj to be equivalent to Cj'; 2) extracting Cpp, Lfp, Rj and Cj, adding a non-voltage-controlled element-Cpp and Lfp which is equivalent to Cpp and Lfp but has a reverse sign, enabling Y parameters of Rj and Cj' which are connected in parallel to present a linear expression form, fitting a DCIV curve equation of Rj according to the linear expression form of the Y parameters, and fitting a calculation equation of Cj and Cfp according to the linear expression form of the Y parameters and a least square method; 3) the method has the advantages that the circuit is simplified by neglecting the impedance of the Rs under a certain bias voltage, the influence of introduced capacitance-Cfp on the accurate extraction of the junction capacitance Cj is effectively eliminated, and the method can be used for diode modeling.
Description
Technical Field
The invention relates to a modeling method, in particular to a diode modeling method.
Background
The Schottky diode Is widely applied to a rectifying circuit of a wireless energy transmission technology, and an SPICE model provided by a common semiconductor manufacturer, including Is, Cj0, Fc, m, Vj, n and the like, can meet design requirements when the working frequency Is low, but along with the improvement of the working frequency, especially aiming at millimeter wave application, the SPICE model has certain referential property but cannot meet the precision requirement of circuit design; therefore, accurate modeling of the schottky diode is required; a Schottky diode equivalent circuit is fitted through a measured S parameter in a traditional modeling method, as shown in figure 1, the equivalent circuit comprises two voltage-controlled elements Rj and Cj and four non-voltage-controlled elements Cpp, Cfp, Lfp and Rs, as shown in figure 2, non-voltage-controlled elements-Cpp, -Cfp, -Lfp and-Rs which are equivalent to Cpp, Cfp, Lfp and Rs but have opposite signs are added, and the values of-Cpp, -Cfp, -Lfp and-Rs are adjusted, so that a series of linear expression form figures 3 of Y parameters connected with Rj and Cj in parallel are realized along with frequency and voltage, and the real part of the Y parameter corresponds to the longitudinal coordinates of Rj and the imaginary part of the Y parameter corresponds to the Cj and the longitudinal coordinates of two coordinate axes respectively, namely the real part of the Y parameter corresponds to the longitudinal coordinates of two coordinate
Real(Y11)＝1/Rj
Imag(Y11)＝ωCj
Omega is the abscissa of the coordinate axis corresponding to the working frequency, so that the extraction of Rj and Cj of different bias voltages is realized; meanwhile, the sizes of-Cpp, -Cfp, -Lfp and-Rs in the graph of FIG. 2 correspond to Cpp, Cfp, Lfp and Rs one by one, so that the parameter extraction of the non-voltage control elements Cpp, Cfp, Lfp and Rs is realized. However, according to the knowledge of semiconductor process fabrication, the schottky diode gate finger (finger) is adjacent to the anode, and the parasitic capacitance Cfp between the gate finger (finger) and the ohmic contact substrate (pad) and the junction capacitance Cj influence each other, and according to the conventional modeling method shown in fig. 2, the accurate extraction of the key parameter Cj of the equivalent circuit of the schottky diode is influenced by directly introducing-Cfp.
Disclosure of Invention
The invention aims to provide a Schottky diode accurate modeling method based on millimeter wave ultra-low power application, which eliminates the influence of introduced-Cfp on the extraction of Cj and improves the modeling accuracy of the Schottky diode.
The purpose of the invention is realized as follows: a Schottky diode accurate modeling method based on millimeter wave ultra-low power application is characterized by comprising the following steps:
step 1) simplifying a circuit, enabling real part impedance of an Rj and Cj parallel equivalent circuit to be far larger than Rs under a certain bias voltage range, neglecting Rs, and enabling parallel Cfp and Cj to be equivalent to Cj' to obtain a simplified circuit;
step 2) extracting Cpp, Lfp, Rj and Cj, adding a non-voltage-controlled element-Cpp and Lfp with the same value as Cpp and Lfp but the opposite sign, and adjusting the value of-Cpp and Lfp to enable Y parameters of Rj and Cj' which are connected in parallel to present a series of linear expression forms along with the frequency under the bias voltage in the step 1), wherein the extraction of Cpp and Lfp can be realized by reversing the value of-Cpp and Lfp; fitting a DCIV curve equation of Rj according to a series of linear expression forms of the Y parameters by matching with a least square method, wherein the curve equation is an Rj expression form; fitting a calculation equation of Cj according to a series of linear expression forms of the Y parameters and a least square method, and calculating a charge model of the Cj under different bias voltages according to the equation;
and 3) extracting Rs, and calculating the value of the Rs through a voltage-current curve equation of the Rs.
As a further limitation of the present invention, the series of linear expression forms in step 2) includes two sets of linear expression forms of a real part and an imaginary part of the Y parameter, where the real part of the Y parameter corresponds to Rj and the imaginary part of the Y parameter corresponds to Cj', respectively corresponding to ordinate axes, that is:
Real(Y11)＝1/Rj
Imag(Y11)＝ωCj’
wherein omega is the abscissa of the coordinate axis corresponding to the working frequency.
As a further limitation of the present invention, the specific method for extracting Rj in step 2) is as follows: the value of Rj under different bias voltages can be calculated according to the real part linear expression form of the Y parameter, and Rj satisfies the following conditions:
wherein V Is bias voltage, q Is basic charge constant, k Is Boltzmann constant, T Is absolute temperature, kT/q Is 26mV at room temperature, values of Is and n are fitted by a real part straight line expression form and a least square method, and then the determination of a DCIV curve of the Schottky diode, namely the determination of the nonlinear resistor Rj Is realized.
As a further limitation of the present invention, the specific method for extracting Cj in step 2 is as follows: according to the virtual straight line expression form of the Y parameter, the values of Cj' under different bias voltages can be calculated, and simultaneously, under the bias voltages, Cj meets the following conditions:
cj' satisfies:
after the least square method is used for parameter fitting, Cj0, Vj, Fc, m and Cfp can be accurately obtained, and charge models of Cj under different bias voltages can be calculated according to the expression of Cj, namely the charge models are calculated
Q(V)＝∫CjdV。
As a further limitation of the present invention, the specific method for extracting Rs in step 3) is:
using formulas
Calculating the value of Rs, where n and Is have been determined by parameter fitting of Rj, and the bias voltage can be selected to be 6V,7V]Different voltage and current test data within the range.
Compared with the prior art, the invention has the beneficial effects that: the invention realizes circuit simplification by neglecting the resistance of Rs under a certain bias voltage, effectively eliminates the influence of introduced parasitic capacitance-Cfp on the accurate extraction of the junction capacitance Cj, and the Schottky diode circuit model established by the method is beneficial to the design of circuits such as a millimeter wave detector, a frequency mixer, a rectifier and the like.
Drawings
Fig. 1 is a standard schottky diode equivalent circuit diagram.
Fig. 2 is a schematic diagram of a standard schottky diode equivalent circuit with non-voltage-controlled element isolation Rj and Cj of equal value and opposite sign.
Fig. 3 shows the relation between the real part and the imaginary part of the Y parameter of the equivalent circuit of the voltage control elements Rj and Cj in the schottky diode equivalent circuit and the frequency and the bias voltage.
Fig. 4 is an equivalent circuit diagram of a schottky diode with Rs omitted based on a specific bias voltage.
Fig. 5 is a simplified schottky diode equivalent circuit diagram based on the parallel connection of Cj and Cfp at a particular bias voltage.
Fig. 6 is a simplified schottky diode equivalent circuit based on a specific bias voltage and the principle of adding non-voltage controlled elements-Cpp and-Lfp isolation Rj and Cj' shown in fig. 5.
Fig. 7 is a graph showing the relationship between the real part and the imaginary part of the Y parameter of the equivalent circuit of the voltage control elements Rj and Cj' in the schottky diode equivalent circuit and the frequency and the bias voltage based on a specific bias voltage.
Detailed Description
The present invention is further illustrated by the following specific examples.
Firstly, according to the required working frequency, a relevant measuring device is used for measuring and obtaining S parameters of the Schottky diode (an equivalent circuit shown in figure 1) under different bias voltages; on the premise of ensuring that the diode is not broken down, in order to acquire more measurement data, the bias voltage test range is as large as possible, and generally 0-7V and 0.05V are selected.
In the bias voltage range of 0-7V, Rj and Cj under different bias conditions are calculated, reference values n of 1.08, Is of 1.7e-14A, Fc of 0.99, m of 0.38, Vj of 0.86V, Cj0 of 0.047pF and Rs of 4.6 omega are provided according to the SPICE model, and the junction resistance Rj and the junction capacitance Cj under different bias voltages can be estimated, wherein q Is a basic charge constant, k Is a Boltzmann constant, T Is an absolute temperature, and kT/q Is 26mV at room temperature.
From the above expression of the junction resistance Rj and the junction capacitance Cj, it can be seen that Rj decreases with the bias voltage, and Cj increases with the bias voltage.
The series-parallel equivalent impedance of Rs, Rj and Cj can be expressed as
Wherein
For the real part impedance after the junction resistance Rj and the junction capacitance Cj are connected in parallel, the parallel real part impedance of the two is realized at bias voltages [ V1, V2] by calculating Rj and Cj]Far greater than Rs in the range, and screening S parameters marked as V1 and V2 under corresponding bias voltages]S parameter under bias voltage, and corresponds to the equivalent circuit of FIG. 4, where 0V<V1<V2<7V。
The S-parameter equivalent circuit corresponding to the bias voltage of Cfp and Cj shown in fig. 4 connected in parallel, i.e., Cj' ═ Cfp + Cj, [ V1, V2] can be further simplified, as shown in fig. 5.
The following is the extraction of specific parameters.
1. Extracting external parasitic parameters Cpp and Lfp:
the simplified circuit model shown in FIG. 5 corresponds to the S parameter at bias voltages [ V1, V2 ]; by adding a non-voltage-controlled element-Cpp and-Lfp with equal values but opposite signs to Cpp and Lfp as shown in FIG. 6 and adjusting the values of-Cpp and-Lfp, Y parameters with Rj and Cj 'connected in parallel are realized to be in a series of linear expression forms along with frequency and voltage as shown in FIG. 7, the real part of the Y parameter corresponds to Rj and the imaginary part of the Y parameter corresponds to Cj' and respectively corresponds to the ordinate of two coordinate axes, namely the real part of the Y parameter corresponds to the ordinate of two coordinate axes, namely the imaginary part of the Y parameter corresponds to
Real(Y11)＝1/Rj
Imag(Y11)＝ωCj’
And omega is the abscissa of the coordinate axis corresponding to the working frequency, so that the extraction of Rj and Cj' of different bias voltages is realized.
Meanwhile, the sizes of-Cpp and-Lfp in FIG. 6 correspond to Cpp and Lfp one by one, so that the parameter extraction of the non-voltage control elements Cpp and Lfp is realized.
2. Determination of voltage, current relationship, i.e. DCIV curve:
in fig. 7, Real (Y11) corresponds to Rj under different bias voltages, because Rj exhibits different resistance values with different bias voltages, that is, with the bias voltages exhibiting nonlinear characteristics, it is only necessary to establish a current relationship under different bias voltages to completely represent the nonlinear resistor Rj; therefore, further based on semiconductor physics knowledge:
wherein q Is a basic charge constant, k Is a boltzmann constant, T Is an absolute temperature, kT/q Is 26mV at room temperature, accurate extraction of parameters Is and n Is realized by using least square fitting, and then determination of a DCIV curve of the schottky diode, namely determination of the nonlinear resistor Rj Is realized.
3. Accurate extraction of parasitic capacitance Cfp and establishment of a charge-based (charge-based) model:
a problem of convergence of a nonlinear capacitor, namely a voltage-controlled capacitor Cj, can be caused in harmonic simulation, so that an accurate charge model needs to be established according to different bias voltages to completely represent the voltage-controlled capacitor Cj; as shown in fig. 7, the sum (the slope of the inclined straight line) of the voltage-controlled junction capacitance Cj and the parasitic capacitance Cfp at different bias voltages can be calculated according to the imaginary part Imag (Y11) of the Y parameter; meanwhile, in the range of bias voltage [ V1, V2], the junction capacitance satisfies:
cj 'is the sum of the junction capacitance Cj and the parasitic capacitance Cfp, so Cj' satisfies:
according to Cj' under different bias voltages corresponding to Imag (Y11) in FIG. 7, the parameters Cj0, Vj, Fc, m and Cfp can be accurately obtained after the least square method is used for parameter fitting; and the charge-based model of the junction capacitance Cj calculated according to the above formula can be calculated under different bias voltages, that is:
Q(V)＝∫CjdV。
extraction of Rs:
at larger bias voltages, the influence of Rs is not negligible, and corresponding corrections need to be made to the voltage-current curve DCIV thereof, that is, the voltage-current curve DCIV is corrected
According to the modified DCIV curve expression (wherein n and Is are determined by the parameter fitting of Rj), at 0,7V]Under the condition of direct current test, in combination with a relatively large bias voltage range, selecting [6V,7V ]]Different voltage and current test data within the range, and thus the Rs parameter value, can be extracted.
An accurate modeling of the schottky diode can be achieved by steps 1-4.
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.
Claims (4)
1. A Schottky diode accurate modeling method based on millimeter wave ultra-low power application is characterized by comprising the following steps:
step 1) simplifying a circuit, enabling real part impedance of an Rj and Cj parallel equivalent circuit to be far larger than Rs under a certain bias voltage range, neglecting Rs, and enabling parallel Cfp and Cj to be equivalent to Cj' to obtain a simplified circuit;
step 2) extracting Cpp, Lfp, Rj and Cj, adding a non-voltage-controlled element-Cpp and Lfp with the same value as Cpp and Lfp but the opposite sign, and adjusting the value of-Cpp and Lfp to enable Y parameters of Rj and Cj' which are connected in parallel to present a series of linear expression forms along with the frequency under the bias voltage in the step 1), wherein the extraction of Cpp and Lfp can be realized by reversing the value of-Cpp and Lfp; fitting a DCIV curve equation of Rj according to a series of linear expression forms of the Y parameters by matching with a least square method, wherein the curve equation is an Rj expression form; fitting a calculation equation of Cj according to a series of linear expression forms of the Y parameters and a least square method, and calculating a charge model of the Cj under different bias voltages according to the equation;
step 3) extracting Rs, calculating the value of the Rs through a voltage-current curve equation of the Rs, wherein the specific method for extracting the Rs comprises the following steps:
using formulas
Calculating the value of Rs, where n and Is have been determined by parameter fitting of Rj, and the bias voltage can be selected to be 6V,7V]Different voltage and current test data within the range.
2. The method for accurately modeling a schottky diode based on millimeter wave ultra-low power application as claimed in claim 1, wherein said series of straight line expressions in step 2) includes two sets of straight line expressions of real part and imaginary part of Y parameter, the real part of Y parameter corresponds to Rj and the imaginary part of Y parameter corresponds to Cj', respectively corresponding to the ordinate of two coordinate axes, that is:
Real(Y11)＝1/Rj
Imag(Y11)＝ωCj’
wherein omega is the abscissa of the coordinate axis corresponding to the working frequency.
3. The accurate modeling method for the schottky diode based on the millimeter wave ultra-low power application according to claim 2, wherein the specific method for extracting Rj in the step 2) is as follows: the value of Rj under different bias voltages can be calculated according to the real part linear expression form of the Y parameter, and Rj satisfies the following conditions:
wherein V Is bias voltage, q Is basic charge constant, k Is Boltzmann constant, T Is absolute temperature, kT/q Is 26mV at room temperature, values of Is and n are fitted by a real part straight line expression form and a least square method, and then the determination of a DCIV curve of the Schottky diode, namely the determination of the nonlinear resistor Rj Is realized.
4. The accurate modeling method for the schottky diode based on the millimeter wave ultra-low power application as claimed in claim 2, wherein the specific method for extracting Cj in the step 2 is as follows: the values of Cj' under different bias voltages can be calculated according to the imaginary part straight line expression form of the Y parameter, and the Cj satisfies the following conditions under the bias voltages:
cj' satisfies:
after the least square method is used for parameter fitting, Cj0, Vj, Fc, m and Cfp can be accurately obtained, and charge models of Cj under different bias voltages can be calculated according to the expression of Cj, namely the charge models are calculated
Q(V)＝∫CjdV。
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