CN107341305A - Schottky diode Precise modeling based on the application of millimeter wave ultra low power - Google Patents
Schottky diode Precise modeling based on the application of millimeter wave ultra low power Download PDFInfo
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Abstract
The invention discloses a kind of Schottky diode Precise modeling based on the application of millimeter wave ultra low power in diode modeling field, comprise the following steps：1）Simplify circuit, adjust bias voltage ranges so that Rj, Cj parallel equivalent circuit real impedance are much larger than Rs, and the Cfp of parallel connection and Cj is equivalent into Cj '；2）Extract Cpp, Lfp, Rj, Cj, add non-voltage-controlled element Cpp, the Lfp opposite with Cpp, Lfp equivalence but symbol, so that straight line expression-form is presented in Rj in parallel and Cj ' Y parameter, Rj DCIV curvilinear equations are fitted according to Y parameter straight line expression-form, Cj accounting equation and Cfp are gone out according to the straight line expression-form of Y parameter cooperation least square fitting；3）Extract Rs, its value, the impedance of the invention by ignoring Rs under certain bias voltage, so as to realize to circuit reduction are calculated by Rs voltage-current curve equation, the influence that the electric capacity Cfp of introducing accurately extracts to junction capacity Cj is effectively eliminated, in being modeled available for diode.
Description
Technical field
The present invention relates to a kind of modeling method, more particularly to a kind of diode modeling method.
Background technology
Schottky diode is widely used in the rectification circuit of wireless energy transmission technology, general semiconductor manufacturing manufacturer
The SPICE models of offer, including Is, Cj0, Fc, m, Vj, n etc., design requirement are disclosure satisfy that when working frequency is relatively low, still
With the raising of working frequency, in particular for Millimeter Wave Applications, SPICE models have certain referential but it is impossible to meet electricity
The accuracy requirement of road design；Therefore, Accurate Model need to be carried out to Schottky diode；Traditional modeling method is joined by the S of measurement
Number fitting Schottky diode equivalent circuit, shown in Fig. 1, equivalent circuit includes two voltage-controlled element Rj, Cj and four non-voltage-controlled
Element Cpp, Cfp, Lfp, Rs, by add with Cpp, Cfp, Lfp, Rs equivalence but the opposite non-voltage-controlled element-Cpp of symbol ,-
Cfp ,-Lfp, shown in-Rs Fig. 2, and-Cpp ,-Cfp ,-Lfp, the size of-Rs values are adjusted, realize Rj and Cj Y parameters in parallel
As frequency and voltage are presented shown in a series of straight line expression-form Fig. 3, the real part of Y parameter corresponds to the imaginary part pair of Rj and Y parameter
Cj is answered to correspond to the ordinate of two reference axis respectively, i.e.,
Real (Y11)=1/Rj
Imag (Y11)=ω Cj
Wherein ω is working frequency respective coordinates axle abscissa, so as to realize the Rj of different bias voltages and Cj extraction；
At the same time-the Cpp in Fig. 2 ,-Cfp ,-Lfp ,-Rs size and Cpp, Cfp, Lfp, Rs are corresponded, so as to realize to non-
Voltage-controlled element Cpp, Cfp, Lfp, Rs parameter extraction.However, relevant knowledge, Schottky diode are prepared according to semiconductor technology
Grid refer to (finger) and adjoined with positive pole, and grid refer to the parasitic capacitance Cfp and junction capacity between (finger), Ohmic contact substrate (pad)
Cj influences each other, and according to the traditional modeling method shown in Fig. 2, by being introduced directly into-Cfp, will to have influence on Schottky diode equivalent
Circuit key parameter Cj accurate extraction.
The content of the invention
It is an object of the invention to provide a kind of Schottky diode Accurate Model side based on the application of millimeter wave ultra low power
Method, the influence that-Cfp of introducing extracts to Cj is eliminated, improve the modeling accuracy of Schottky diode.
The object of the present invention is achieved like this：A kind of Schottky diode based on the application of millimeter wave ultra low power is accurate
Modeling method, it is characterised in that comprise the following steps：
Step 1) simplifies circuit, under certain bias voltage ranges so that Rj, Cj parallel equivalent circuit real impedance are remote
More than Rs, ignore Rs, the Cfp of parallel connection and Cj is equivalent to Cj ', is simplified circuit；
Step 2) extraction Cpp, Lfp, Rj, Cj, the addition non-voltage-controlled element-Cpp opposite with Cpp, Lfp equivalence but symbol ,-
Lfp, and adjust the size of-Cpp ,-Lfp value so that Rj in parallel and Cj ' Y parameter are in the bias voltage described in step 1)
Under a series of straight line expression-forms are presented with frequency ,-Cpp ,-Lfp value now reversely can be achieved to Cpp, Lfp extraction；
Go out Rj DCIV curvilinear equations, the curvilinear equation according to a series of straight line expression-forms of Y parameter cooperation least square fitting
The as Rj forms of expression；Go out Cj accounting equation according to a series of straight line expression-forms of Y parameter cooperation least square fitting,
Its charge model under different bias voltages is calculated further according to the equation；
Step 3) extracts Rs, and its value is calculated by Rs voltage-current curve equation.
As the further restriction of the present invention, a series of straight line expression-forms include the real part of Y parameter described in step 2)
With two groups of straight line expression-forms of imaginary part, the real part of Y parameter corresponds to Rj and the imaginary part of Y parameter corresponds to Cj ', corresponds to two coordinates respectively
The ordinate of axle, i.e.,：
Real (Y11)=1/Rj
Imag (Y11)=ω Cj '
Wherein ω is working frequency respective coordinates axle abscissa.
As the further restriction of the present invention, extraction Rj specific method is in step 2)：According to the real part straight line of Y parameter
Expression-form can calculate the value of the Rj under different bias voltages, and Rj meets：Wherein
V is bias voltage, and q is elementary charge constant, and k is Boltzmann constant, and T is absolute temperature, and kT/q=26mV, passes through at room temperature
Real part straight line expression-form coordinates least square fitting to go out Is, n value, then realizes the DCIV curves to Schottky diode
Determination, i.e. nonlinear resistance Rj determination.
As the further restriction of the present invention, the specific method that Cj is extracted in step 2 is：According to the straight dashed line table of Y parameter
The value of the Cj ' under different bias voltages can be calculated up to form, while under the bias voltage, Cj meets：
Cj ' meets：
Carry out that after parameter fitting Cj0, Vj, Fc, m and Cfp can be accurately obtained using least square method, further according to Cj's
Expression formula can calculate its charge model under different bias voltages, i.e.,
Q (V)=∫ CjdV.
As the further restriction of the present invention, extraction Rs specific method is in step 3)：
Utilize formulaRs value is calculated, wherein n, Is has passed through Rj's
Parameter fitting determines that bias voltage can select the different voltage and current test datas in the range of [6V, 7V].
Compared with prior art, the beneficial effects of the present invention are：The present invention under certain bias voltage by ignoring
Rs impedance, so as to realize to circuit reduction, effectively eliminate what the parasitic capacitance-Cfp of introducing accurately extracted to junction capacity Cj
Influence, the Schottky diode circuit model established using this method contributes to the electricity such as millimeter wave detector, frequency mixer, rectifier
Design on road.
Brief description of the drawings
Fig. 1 is standard Schottky diode equivalent circuit figure.
Fig. 2 be based on standard Schottky diode equivalent circuit add the opposite non-voltage-controlled element separation Rj of equivalent symbol and
Cj schematic diagrams.
Fig. 3 is the real part of voltage-controlled element Rj and Cj equivalent circuit Y parameter in Schottky diode equivalent circuit, imaginary part and frequency
Rate, bias voltage relation.
Fig. 4 is based on the Schottky diode equivalent circuit figure for ignoring Rs under certain bias voltage.
Fig. 5 is based on Cj under the certain bias voltage and Cfp Schottky diode equivalent circuit figures in parallel simplified.
Fig. 6 be based under certain bias voltage simplify Schottky diode equivalent circuit Fig. 5 shown in plus non-voltage-controlled element-
Cpp and-Lfp isolation Rj and Cj ' schematic diagrams.
Fig. 7 is to be based under certain bias voltage voltage-controlled element Rj and Cj ' equivalent circuits Y in Schottky diode equivalent circuit
Real part, imaginary part and frequency, the bias voltage relation of parameter.
Embodiment
With reference to specific embodiment, the present invention will be further described.
Working frequency as needed first, measured using module related measurement devices and obtain Schottky diode (shown in Fig. 1 etc.
Imitate circuit) S parameter under different bias voltages；Under the premise of ensureing that diode is not breakdown, in order to obtain more measurement numbers
According to bias voltage test scope is as big as possible, can typically select 0-7V, is spaced 0.05V.
In bias voltage 0-7V bias voltage ranges, Rj and Cj under different bias conditions is calculated, is carried according to SPICE models
Reference value n=1.08, Is=1.7e-14A, Fc=0.99, m=0.38, Vj=0.86V, Cj0=0.047pF, Rs=of confession
4.6 Ω, it can be evaluated whether that the junction resistance Rj and junction capacity Cj under different bias voltages, wherein q are elementary charge constants, k is Bohr
Hereby graceful constant, T are absolute temperature, at room temperature kT/q=26mV.
It can be seen that Rj successively decreases with bias voltage by above-mentioned junction resistance Rj and junction capacity Cj expression formula, and Cj is with biasing
Voltage is incremented by.
Rs, Rj, Cj connection in series-parallel equiva lent impedance can be expressed as
WhereinIt is real by calculating Rj and Cj for the real impedance after junction resistance Rj and junction capacity Cj parallel connections
Both existing real impedances in parallel are much larger than Rs in the range of bias voltage [V1, V2], and screen the S under corresponding bias voltage
Parameter, the S parameter being designated as under [V1, V2] bias voltage, and, wherein 0V corresponding with Fig. 4 equivalent circuits<V1<V2<7V.
Cfp shown in Fig. 4 and Cj is in parallel, i.e. Cj '=Cfp+Cj, corresponding S parameter equivalent circuit under [V1, V2] bias voltage
Can further it simplify, as shown in Figure 5.
The extraction of design parameter is carried out below.
1. ectoparasitism parameter Cpp, Lfp parameter extraction：
Simplify the S parameter under corresponding [V1, the V2] bias voltage of circuit model shown in Fig. 5；It is equivalent with Cpp, Lfp by adding
But symbol opposite non-voltage-controlled element-Cpp ,-Lfp as shown in fig. 6, and adjust the size of-Cpp ,-Lfp value, realize Rj with
A series of straight line expression-forms are presented as shown in fig. 7, the real part of Y parameter corresponds to Rj with frequency and voltage in Y parameter in parallel Cj '
The ordinate that Cj ' corresponds to two reference axis respectively is corresponded to the imaginary part of Y parameter, i.e.,
Real (Y11)=1/Rj
Imag (Y11)=ω Cj '
Wherein ω is answers working frequency respective coordinates axle abscissa, so as to realize carrying for the Rj of different bias voltages and Cj '
Take.
At the same time-the Cpp in Fig. 6 ,-Lfp size and Cpp, Lfp are corresponded, so as to realize to non-voltage-controlled element
Cpp, Lfp parameter extraction.
2. the determination of voltage, current relationship, i.e. DCIV curves：
Rj in Fig. 7 under the corresponding different bias voltages of Real (Y11), because Rj is presented different as bias voltage is different
Resistance, i.e., as non-linear behavior is presented in bias voltage, it is necessary to establish current relationship under different bias voltages could be complete
Represent nonlinear resistance Rj；So further according to Semiconductor Physics knowledge：Wherein q
It is elementary charge constant, k is Boltzmann constant, and T is absolute temperature, and kT/q=26mV, is intended using least square method at room temperature
The accurate extraction for realizing parameter Is, n is closed, then realizes the determination to the DCIV curves of Schottky diode, i.e. nonlinear resistance
Rj determination.
3. parasitic capacitance Cfp accurate extraction and the foundation of electric charge (charge-based) model：
Nonlinear capacitance, i.e. voltage controlled capacitor Cj can produce convergence problem in harmonic wave emulation, it is therefore desirable to according to difference
Bias voltage, establish accurate charge model and carry out complete representation voltage controlled capacitor Cj；As shown in fig. 7, according to Y parameter imaginary part Imag
(Y11) voltage-controlled junction capacity Cj and parasitic capacitance Cfp sum under different bias voltages can be calculated (for the slope of angled straight lines)；
Meanwhile in the range of bias voltage [V1, V2], junction capacity meets:
Cj ' is junction capacity Cj and parasitic capacitance Cfp sums, so Cj ' meets：
According to the Cj ' under different bias voltages corresponding to Imag in Fig. 7 (Y11), parameter plan is carried out using least square method
Cj0, Vj, Fc, m and Cfp can be accurately obtained after conjunction；And the junction capacity Cj calculated according to above formula expression formula can be counted
Its electric charge (charge-based) model under different bias voltages is calculated, i.e.,：
Q (V)=∫ CjdV.
4.Rs extraction：
Under larger bias voltage, Rs influence is non-negligible, needs to make accordingly for its voltage-current curve DCIV
Amendment, i.e.,According to revised DCIV curve representations formula, (wherein n, Is have passed through Rj's
Parameter fitting determines), under the conditions of [0,7V] DC test, with reference in relatively large bias voltage ranges, select [6V, 7V] model
Interior different voltage and current test datas are enclosed, and then Rs parameter values can be extracted.
The Accurate Model of Schottky diode can be realized by step 1-4.
The invention is not limited in above-described embodiment, on the basis of technical scheme disclosed by the invention, the skill of this area
Art personnel are according to disclosed technology contents, it is not necessary to which performing creative labour can makes one to some of which technical characteristic
A little to replace and deform, these are replaced and deformation is within the scope of the present invention.
Claims (5)
1. it is a kind of based on millimeter wave ultra low power application Schottky diode Precise modeling, it is characterised in that including with
Lower step：
Step 1) simplifies circuit, under certain bias voltage ranges so that Rj, Cj parallel equivalent circuit real impedance are much larger than
Rs, ignore Rs, the Cfp of parallel connection and Cj is equivalent to Cj ', is simplified circuit；
Step 2) extracts Cpp, Lfp, Rj, Cj, adds non-voltage-controlled element-the Cpp ,-Lfp opposite with Cpp, Lfp equivalence but symbol,
And adjust the size of-Cpp ,-Lfp value so that Rj in parallel and Cj ' Y parameter under the bias voltage described in step 1) with
Frequency and a series of straight line expression-forms are presented ,-Cpp ,-Lfp value now reversely can be achieved to Cpp, Lfp extraction；According to Y
A series of straight line expression-forms of parameter coordinate least square fitting to go out Rj DCIV curvilinear equations, and the curvilinear equation is Rj
The form of expression；Go out Cj accounting equation according to a series of straight line expression-forms of Y parameter cooperation least square fitting, further according to
The equation calculates its charge model under different bias voltages；
Step 3) extracts Rs, and its value is calculated by Rs voltage-current curve equation.
2. the Schottky diode Precise modeling according to claim 1 based on the application of millimeter wave ultra low power, its
It is characterised by, a series of straight line expression-forms described in step 2) include two groups of straight line expression-forms of real and imaginary parts of Y parameter,
The real part of Y parameter corresponds to Rj and the imaginary part of Y parameter corresponds to Cj ', corresponds to the ordinate of two reference axis respectively, i.e.,：
Real (Y11)=1/Rj
Imag (Y11)=ω Cj '
Wherein ω is working frequency respective coordinates axle abscissa.
3. the Schottky diode Precise modeling according to claim 2 based on the application of millimeter wave ultra low power, its
It is characterised by, extraction Rj specific method is in step 2)：It can be calculated not according to the real part straight line expression-form of Y parameter
With the value of Rj under bias voltage, Rj meets：Wherein V is bias voltage, and q is substantially electric
Lotus constant, k are Boltzmann constants, and T is absolute temperature, at room temperature kT/q=26mV, are coordinated by real part straight line expression-form
Least square fitting goes out Is, n value, then realizes the determination to the DCIV curves of Schottky diode, i.e. nonlinear resistance
Rj determination.
4. the Schottky diode Precise modeling according to claim 2 based on the application of millimeter wave ultra low power, its
It is characterised by, the specific method that Cj is extracted in step 2 is：It can be calculated not according to the imaginary part straight line expression-form of Y parameter
With the value of Cj ' under bias voltage, while under the bias voltage, Cj meets：
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Carry out that after parameter fitting Cj0, Vj, Fc, m and Cfp can be accurately obtained using least square method, further according to Cj expression
Formula can calculate its charge model under different bias voltages, i.e.,
Q (V)=∫ CjdV.
5. the Schottky diode Precise modeling according to claim 3 based on the application of millimeter wave ultra low power, its
It is characterised by, extraction Rs specific method is in step 3)：
Utilize formulaRs value is calculated, wherein n, Is passes through Rj parameter
Fitting determines that bias voltage can select the different voltage and current test datas in the range of [6V, 7V].
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| CN112883676A (en) * | 2021-03-16 | 2021-06-01 | 中国科学院微电子研究所 | Field plate type Schottky diode device model of thin barrier layer and parameter extraction method |
| CN113252991A (en) * | 2021-05-07 | 2021-08-13 | 清华大学深圳国际研究生院 | Method for calculating junction capacitance of diode |
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| 赵向阳，王俊龙，邢东，杨大宝，张立森，梁士雄，冯志红: "太赫兹平面肖特基二极管参数模型", 《红外与激光工程》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112883676A (en) * | 2021-03-16 | 2021-06-01 | 中国科学院微电子研究所 | Field plate type Schottky diode device model of thin barrier layer and parameter extraction method |
| CN112883676B (en) * | 2021-03-16 | 2024-06-04 | 中国科学院微电子研究所 | Field plate type Schottky diode device model with thin barrier layer and parameter extraction method |
| CN113252991A (en) * | 2021-05-07 | 2021-08-13 | 清华大学深圳国际研究生院 | Method for calculating junction capacitance of diode |
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