CN200959327Y - Magnetic analytic system of ion filler - Google Patents

Magnetic analytic system of ion filler Download PDF

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Publication number
CN200959327Y
CN200959327Y CN 200620012982 CN200620012982U CN200959327Y CN 200959327 Y CN200959327 Y CN 200959327Y CN 200620012982 CN200620012982 CN 200620012982 CN 200620012982 U CN200620012982 U CN 200620012982U CN 200959327 Y CN200959327 Y CN 200959327Y
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CN
China
Prior art keywords
magnetic field
magnetic
power supply
analyzer
switching power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 200620012982
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Chinese (zh)
Inventor
孙雪平
郭健辉
田小海
文超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Zhongkexin Electronic Equipment Co Ltd
Original Assignee
Beijing Zhongkexin Electronic Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Beijing Zhongkexin Electronic Equipment Co Ltd filed Critical Beijing Zhongkexin Electronic Equipment Co Ltd
Priority to CN 200620012982 priority Critical patent/CN200959327Y/en
Application granted granted Critical
Publication of CN200959327Y publication Critical patent/CN200959327Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses a magnetic analysis system of ion implanter, comprising a power controller, a high power switching power supply, a hall amplifier, a hall probe and a magnetic analyzer. The power controller transforms the magnetic field digital signals needed by the magnetic analyzer into the analog signals which are sent to the magnetic field control end of the high power switching power supply; after received the control signal, the high power switching power supply outputs a certain voltage to the magnetic analyzer, the voltage will generate a certain current and a certain magnetic field in the upper and lower coil of the magnetic analyzer, the hall probe located in the analyzer magnetic field has detected the magnetic field, then the micro voltage transformed by the magnetic field is amplified by the hall amplifier and is sent to comparison end of the high power switching power supply to compare with the magnetic field quantity set by the magnetic field control end, the high power switching power supply adjusts the output voltage based on the comparison result to make the actual magnetic field detected by the hall probe keep uniform with the setting magnetic field. The utility model is provided with stable magnetic field, good stability and high purity of ion implantation beam.

Description

Ion implantor magnetic analysis system
Technical field
The utility model relates to the ion sorting technology field of ion implantation technique field, the especially ion implantation process of wafer.
Background technology
In ion implantor, ion source is the hybrid ionic of different kinds of ions by the ion that discharge is produced.And the ion that is injected in the wafer requires single pure ion, therefore needed ionic species must be sorted out.Its grading principle is to utilize Lorentz force, and promptly the movement locus (R) of charged particle in stationary magnetic field (B) and charged particle quality (m), charged particle energy (E) and charge number satisfies relational expression BR=144.5* (mE) 0.5/ q.The number of turn N of magnetic field B and the coil that produces magnetic field and the electric current I that flows through coil are directly proportional promptly in the magnetic analyzer: B ∝ IN.
The stability and the precision of the stability of injection line and the purity of line and magnetic field B are closely related.
In the ion implantor in the past, the stable of magnetic field is to come indirect realization by stable electric current by the magnet-wire bag.But owing to require the power of power supply increasing, electric current is increasing, and the precision of big current sampling resistor is because Temperature Influence can not satisfy modern ion implantor to the stability of analysis magnetic field B and the requirement of precision.This just requires better ion sorting technology to substitute existing constant-current type magnetic analyzer to reach better ion and inject the stability of line and the purity of line.
Summary of the invention
Goal of the invention of the present utility model is injected line good stability and the high ion implantor magnetic analysis system of beam purity for a kind of ion that makes is provided.
The technical scheme that realizes the foregoing invention purpose is as follows:
A kind of ion implantor magnetic analysis system comprises high power switching power supply, the Hall amplifier, and power-supply controller of electric and magnetic analyzer, wherein:
The required magnetic field digital signal of magnetic analyzer that described power-supply controller of electric is set main control computer changes into the magnetic field control end that analog signal is delivered to high power switching power supply;
Described high power switching power supply is exported certain voltage to magnetic analyzer after accepting analog control signal that controller provides;
Produce certain electric current in the upper and lower line bag of described magnetic analyzer, electric current produces certain magnetic field in magnetic analyzer;
Place the hall probe in analyzer magnetic field that the magnetic field amount is converted into a small voltage, and be sent to the Hall amplifier;
Deliver to the relatively end of high power switching power supply after the voltage amplification that described Hall amplifier transmits hall probe, and in magnetic field amount that the high power switching power supply control end is set relatively;
Described high power switching power supply is adjusted output voltage according to comparative result, makes the detected true field of hall probe consistent with setting magnetic field.
The high accuracy micro-signal device A1 of described Hall amplifier is connected with hall probe, and A2 is connected to high power switching power supply through amplifier, is to be connected with temperature-compensating A3 between annunciator A1 and the amplifier A2 in high accuracy.
Mainly contain current channel comparison amplifier U2, magnetic field passage comparison amplifier U1, pulse width modulator, high-power inverter, output rectifier filter, current sampling, voltage sampling in the high-power standard switch power supply.
Be connected with clamp diode D3 between current channel comparison amplifier U2 negative input end and the magnetic field passage comparison amplifier U1 positive input terminal in the high-power standard switch power supply.
Power-supply controller of electric 4 communicates by optical fiber and main control computer, and the analog signal that the required magnetic field digital signal of magnetic analyzer that main control computer is set changes into 0~5VDC is delivered to the magnetic field control end of high power switching power supply 1.High power switching power supply 1 is exported certain voltage after accepting the control signal of 0~5V that controller provides, and this voltage produces certain electric current in the upper and lower line bag 5 of magnetic analyzer 6, and electric current produces certain magnetic field in magnetic analyzer 6.Place the hall probe 3 of the analysis of magnetic place 7 of magnetic analyzer 6 to detect magnetic field, and magnetic field amount is converted into a small voltage, the relatively end of delivering to high power switching power supply 1 after amplifying through Hall amplifier 2 compares with the magnetic field amount that the magnetic field control end of high power switching power supply 1 is set.If detected true field is bigger than setting magnetic field, the voltage of high power switching power supply 1 output reduces, and electric current is reduced, and analyzer magnetic field reduces like this; If detected true field is littler than setting magnetic field, the voltage of high power switching power supply 1 output rises, and makes electric current subtract increase, and analyzer magnetic field increases like this, and such magnetic field closed-loop control makes magnetic field stable.So ion injects line good stability and beam purity height.
Description of drawings
Fig. 1 is the utility model structured flowchart;
Fig. 2 is the structured flowchart of the utility model specific embodiment.
Embodiment
The utility model is described in further detail below in conjunction with the drawings and specific embodiments, but not as to qualification of the present utility model.
As depicted in figs. 1 and 2, a kind of ion implantor magnetic analysis system comprises: high-power standard switch power supply 1, and clamp diode D3, Hall amplifier 2, hall probe 3, power-supply controller of electric 4 and magnetic analyzer 6 are formed.Mainly contain current channel comparison amplifier U2, magnetic field passage comparison amplifier U1, pulse width modulator, high-power inverter, output rectifier filter, current sampling, voltage sampling in the high-power standard switch power supply 1.Hall amplifier 2 mainly contains high accuracy micro-signal device A1, amplifier A2, temperature-compensating A3.Have the faradic upper and lower line bag 5 of generation in the magnetic analyzer, hall probe 3 is wide region high accuracy linear hall sensors, places magnetic analyzer analysis of magnetic place 7.Power-supply controller of electric 4 mainly contains CPU, A/D, D/A, light/devices such as electricity conversion.
Be added to the current channel comparison amplifier U2 of high-power standard switch power supply 1 simultaneously through the magnetic field set point (the maximum field Bmax of 0~5VDC correspondence, 0~magnetic analyzer) of D/A output when controller 4, the negative input end of magnetic field passage comparison amplifier U1, at initialization phase because hysteresis effect, the foundation in magnetic field lags behind electric current, current sampling feeds back to current channel comparison amplifier U2's+end, U2's and make high-power standard switch power supply 1 be output as the current stabilization pattern, because the clamping action of clamp diode D3, output current is slowly to rise along with the slowly foundation in magnetic field, and because the clamping action of D3, when even hall probe 3 occurring the magnetic field passage in the magnetic region not being in open loop, power supply output can not occur out of control, when detecting less than magnetic field, the output of the electric current of power supply can not exported excessive electric current because of too high value is set, in this case electric power outputting current by the D3 clamper at a low value (0.6~0.7/5*Imax).When magnetic field is not less than set point, magnetic field passage comparison amplifier U1 output by-become+, diode D1 conducting, output current is descended, the current value that set this moment is not less than the current value that feeds back, and it is negative to make that current channel comparison amplifier U2 is output as, and diode D2 ends.This moment, high-power standard switch power supply 1 entered the stabilizing magnetic field pattern automatically.

Claims (1)

1. an ion implantor magnetic analysis system comprises high power switching power supply, the Hall amplifier, power-supply controller of electric and magnetic analyzer, it is characterized by: power-supply controller of electric is connected with the magnetic field control end of high power switching power supply, the described hall probe of magnetic analyzer that places is connected with the Hall amplifier, the Hall amplifier is connected with high power switching power supply, and high power switching power supply is connected with magnetic analyzer again.
CN 200620012982 2006-04-07 2006-04-07 Magnetic analytic system of ion filler Expired - Fee Related CN200959327Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200620012982 CN200959327Y (en) 2006-04-07 2006-04-07 Magnetic analytic system of ion filler

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200620012982 CN200959327Y (en) 2006-04-07 2006-04-07 Magnetic analytic system of ion filler

Publications (1)

Publication Number Publication Date
CN200959327Y true CN200959327Y (en) 2007-10-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200620012982 Expired - Fee Related CN200959327Y (en) 2006-04-07 2006-04-07 Magnetic analytic system of ion filler

Country Status (1)

Country Link
CN (1) CN200959327Y (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102445670A (en) * 2010-10-13 2012-05-09 北京中科信电子装备有限公司 Alternating current Hall system
CN103187228A (en) * 2011-12-30 2013-07-03 北京中科信电子装备有限公司 Correcting method for analyzer magnetic field data
CN104425200A (en) * 2013-08-21 2015-03-18 斯伊恩股份有限公司 Ion implanter, magnetic field measurement device, and ion implantation method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102445670A (en) * 2010-10-13 2012-05-09 北京中科信电子装备有限公司 Alternating current Hall system
CN102445670B (en) * 2010-10-13 2015-04-15 北京中科信电子装备有限公司 Alternating current Hall system
CN103187228A (en) * 2011-12-30 2013-07-03 北京中科信电子装备有限公司 Correcting method for analyzer magnetic field data
WO2013097490A1 (en) * 2011-12-30 2013-07-04 北京中科信电子装备有限公司 Calibration method for magnetic field data of analyzer
CN104425200A (en) * 2013-08-21 2015-03-18 斯伊恩股份有限公司 Ion implanter, magnetic field measurement device, and ion implantation method
CN104425200B (en) * 2013-08-21 2017-09-19 斯伊恩股份有限公司 Ion implantation apparatus, magnetic field measuring device and ion injection method
TWI625756B (en) * 2013-08-21 2018-06-01 Sumitomo Heavy Industries Ion Technology Co Ltd Ion implantation device and ion implantation method

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C19 Lapse of patent right due to non-payment of the annual fee
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