DE69123677T2 - Reflektionsmaske und eine solche Reflektionsmaske verwendendes geladenes Teilchenstrahl-Belichtungsgerät - Google Patents
Reflektionsmaske und eine solche Reflektionsmaske verwendendes geladenes Teilchenstrahl-BelichtungsgerätInfo
- Publication number
- DE69123677T2 DE69123677T2 DE69123677T DE69123677T DE69123677T2 DE 69123677 T2 DE69123677 T2 DE 69123677T2 DE 69123677 T DE69123677 T DE 69123677T DE 69123677 T DE69123677 T DE 69123677T DE 69123677 T2 DE69123677 T2 DE 69123677T2
- Authority
- DE
- Germany
- Prior art keywords
- reflection mask
- exposure apparatus
- charged particle
- particle beam
- beam exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31777—Lithography by projection
- H01J2237/31789—Reflection mask
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2256960A JP2957669B2 (ja) | 1990-09-28 | 1990-09-28 | 反射マスク及びこれを用いた荷電ビーム露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69123677D1 DE69123677D1 (de) | 1997-01-30 |
DE69123677T2 true DE69123677T2 (de) | 1997-05-28 |
Family
ID=17299763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69123677T Expired - Fee Related DE69123677T2 (de) | 1990-09-28 | 1991-09-18 | Reflektionsmaske und eine solche Reflektionsmaske verwendendes geladenes Teilchenstrahl-Belichtungsgerät |
Country Status (5)
Country | Link |
---|---|
US (1) | US5254417A (de) |
EP (1) | EP0478215B1 (de) |
JP (1) | JP2957669B2 (de) |
KR (1) | KR950014607B1 (de) |
DE (1) | DE69123677T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5354583A (en) * | 1992-11-09 | 1994-10-11 | Martin Marietta Energy Systems, Inc. | Apparatus and method for selective area deposition of thin films on electrically biased substrates |
USRE40928E1 (en) | 1993-10-29 | 2009-10-06 | Tdk Corporation | Optical pickup |
US5724337A (en) * | 1993-10-29 | 1998-03-03 | Tdk Corporation | Optical pickup with a compact design |
JP3299647B2 (ja) * | 1994-11-30 | 2002-07-08 | 株式会社日立製作所 | 電子線描画装置および電子線描画方法 |
US6008121A (en) * | 1996-03-19 | 1999-12-28 | Siemens Aktiengesellschaft | Etching high aspect contact holes in solid state devices |
JP3565652B2 (ja) * | 1996-04-25 | 2004-09-15 | 富士通株式会社 | 荷電粒子ビーム露光装置用透過マスク及びそれを利用した露光装置 |
DE10084761T1 (de) | 1999-07-02 | 2002-07-11 | Michael Mauck | Verfahren und Gerät zum gleichzeitigen Abscheiden und Beobachten von Materialien auf einem Target |
FR2800477B1 (fr) * | 1999-10-27 | 2003-09-19 | X Ion | Procede de lithographie ionique, equipement de mise en oeuvre, et reticule pour un tel equipement |
FR2804246B1 (fr) * | 2000-01-21 | 2003-09-19 | X Ion | Procede de lithographie ionique, revetement a fort contrast, equipement et reticule de mise en oeuvre |
FR2804764A1 (fr) * | 2000-02-04 | 2001-08-10 | X Ion | Reticule actif, procede de realisation et de controle d'un tel reticule, procede de lithographie ionique utilisant un tel reticule et equipement de mise en oeuvre |
FR2808378B1 (fr) * | 2000-04-27 | 2003-08-15 | X Ion | Reticule actif, procede de realisation d'un tel reticule, procede de lithographie ionique utilisant un tel reticule et equipement de mise en oeuvre |
JP4006216B2 (ja) | 2001-10-26 | 2007-11-14 | 日本電子株式会社 | 可変面積型電子ビーム描画装置を用いた描画方法 |
US7432514B2 (en) * | 2002-03-26 | 2008-10-07 | International Business Machines Corporation | Method and apparatus for surface potential reflection electron mask lithography |
US6822246B2 (en) * | 2002-03-27 | 2004-11-23 | Kla-Tencor Technologies Corporation | Ribbon electron beam for inspection system |
JP4158199B2 (ja) * | 2004-01-30 | 2008-10-01 | 株式会社島津製作所 | Tftアレイ検査装置 |
US7816655B1 (en) * | 2004-05-21 | 2010-10-19 | Kla-Tencor Technologies Corporation | Reflective electron patterning device and method of using same |
JP2007012516A (ja) * | 2005-07-01 | 2007-01-18 | Jeol Ltd | 荷電粒子ビーム装置及び荷電粒子ビームを用いた試料情報検出方法 |
US7358512B1 (en) * | 2006-03-28 | 2008-04-15 | Kla-Tencor Technologies Corporation | Dynamic pattern generator for controllably reflecting charged-particles |
US7566882B1 (en) * | 2006-12-14 | 2009-07-28 | Kla-Tencor Technologies Corporation | Reflection lithography using rotating platter |
US9355818B2 (en) * | 2010-05-28 | 2016-05-31 | Kla-Tencor Corporation | Reflection electron beam projection lithography using an ExB separator |
US8373144B1 (en) * | 2010-08-31 | 2013-02-12 | Kla-Tencor Corporation | Quasi-annular reflective electron patterning device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5354974A (en) * | 1976-10-29 | 1978-05-18 | Mitsubishi Electric Corp | Electron beam exposure system |
FR2461281A2 (fr) * | 1979-07-06 | 1981-01-30 | Thomson Csf | Dispositif de microlithographie par bombardement electronique |
NL8201732A (nl) * | 1982-04-27 | 1983-11-16 | Bernardus Johannes Gerardus Ma | Bestralingsinrichting met bundelsplitsing. |
DE68924122T2 (de) * | 1988-10-20 | 1996-05-09 | Fujitsu Ltd | Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl. |
US5130213A (en) * | 1989-08-07 | 1992-07-14 | At&T Bell Laboratories | Device manufacture involving lithographic processing |
JPH05329080A (ja) * | 1992-05-29 | 1993-12-14 | Tokyo Electric Co Ltd | 電気掃除機 |
-
1990
- 1990-09-28 JP JP2256960A patent/JP2957669B2/ja not_active Expired - Fee Related
-
1991
- 1991-09-17 US US07/760,913 patent/US5254417A/en not_active Expired - Lifetime
- 1991-09-18 EP EP91308507A patent/EP0478215B1/de not_active Expired - Lifetime
- 1991-09-18 DE DE69123677T patent/DE69123677T2/de not_active Expired - Fee Related
- 1991-09-28 KR KR1019910016968A patent/KR950014607B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69123677D1 (de) | 1997-01-30 |
JP2957669B2 (ja) | 1999-10-06 |
KR950014607B1 (ko) | 1995-12-11 |
EP0478215B1 (de) | 1996-12-18 |
JPH04137519A (ja) | 1992-05-12 |
EP0478215A2 (de) | 1992-04-01 |
US5254417A (en) | 1993-10-19 |
EP0478215A3 (de) | 1992-04-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |