FR2800477B1 - Procede de lithographie ionique, equipement de mise en oeuvre, et reticule pour un tel equipement - Google Patents

Procede de lithographie ionique, equipement de mise en oeuvre, et reticule pour un tel equipement

Info

Publication number
FR2800477B1
FR2800477B1 FR9913424A FR9913424A FR2800477B1 FR 2800477 B1 FR2800477 B1 FR 2800477B1 FR 9913424 A FR9913424 A FR 9913424A FR 9913424 A FR9913424 A FR 9913424A FR 2800477 B1 FR2800477 B1 FR 2800477B1
Authority
FR
France
Prior art keywords
ions
equipment
reticle
implementing
crosslinked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9913424A
Other languages
English (en)
Other versions
FR2800477A1 (fr
Inventor
Jean Pierre Lazzari
Roux Vincent Le
Gilles Borsoni
Gianni Giardino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Ion SA
Original Assignee
X Ion SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Ion SA filed Critical X Ion SA
Priority to FR9913424A priority Critical patent/FR2800477B1/fr
Priority to PCT/FR2000/002827 priority patent/WO2001031403A1/fr
Priority to AU77982/00A priority patent/AU7798200A/en
Publication of FR2800477A1 publication Critical patent/FR2800477A1/fr
Application granted granted Critical
Publication of FR2800477B1 publication Critical patent/FR2800477B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31755—Lithography using particular beams or near-field effects, e.g. STM-like techniques using ion beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
FR9913424A 1999-10-27 1999-10-27 Procede de lithographie ionique, equipement de mise en oeuvre, et reticule pour un tel equipement Expired - Fee Related FR2800477B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR9913424A FR2800477B1 (fr) 1999-10-27 1999-10-27 Procede de lithographie ionique, equipement de mise en oeuvre, et reticule pour un tel equipement
PCT/FR2000/002827 WO2001031403A1 (fr) 1999-10-27 2000-10-11 Procede de lithographie ionique, equipement de mise en oeuvre, et reticule pour un tel equipement
AU77982/00A AU7798200A (en) 1999-10-27 2000-10-11 Ionic lithography method, implementing equipment and reticle for such equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9913424A FR2800477B1 (fr) 1999-10-27 1999-10-27 Procede de lithographie ionique, equipement de mise en oeuvre, et reticule pour un tel equipement

Publications (2)

Publication Number Publication Date
FR2800477A1 FR2800477A1 (fr) 2001-05-04
FR2800477B1 true FR2800477B1 (fr) 2003-09-19

Family

ID=9551408

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9913424A Expired - Fee Related FR2800477B1 (fr) 1999-10-27 1999-10-27 Procede de lithographie ionique, equipement de mise en oeuvre, et reticule pour un tel equipement

Country Status (3)

Country Link
AU (1) AU7798200A (fr)
FR (1) FR2800477B1 (fr)
WO (1) WO2001031403A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329080A (en) * 1976-08-30 1978-03-17 Mitsubishi Electric Corp Electron beam exposure system
US4472636A (en) * 1979-11-01 1984-09-18 Eberhard Hahn Method of and device for corpuscular projection
JP2957669B2 (ja) * 1990-09-28 1999-10-06 株式会社東芝 反射マスク及びこれを用いた荷電ビーム露光装置
JP3084307B2 (ja) * 1991-08-20 2000-09-04 日本真空技術株式会社 イオン注入装置
JPH09270234A (ja) * 1996-03-29 1997-10-14 Nissin Electric Co Ltd チャンバ挿入型ｅｃｒ低エネルギ−イオン銃

Also Published As

Publication number Publication date
AU7798200A (en) 2001-05-08
FR2800477A1 (fr) 2001-05-04
WO2001031403A1 (fr) 2001-05-03

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Legal Events

Date Code Title Description
ST Notification of lapse