DE69120032D1 - Verfahren zur Feststellung der elektrischen Eigenschaften eines Silizium-Monokristalles - Google Patents

Verfahren zur Feststellung der elektrischen Eigenschaften eines Silizium-Monokristalles

Info

Publication number
DE69120032D1
DE69120032D1 DE69120032T DE69120032T DE69120032D1 DE 69120032 D1 DE69120032 D1 DE 69120032D1 DE 69120032 T DE69120032 T DE 69120032T DE 69120032 T DE69120032 T DE 69120032T DE 69120032 D1 DE69120032 D1 DE 69120032D1
Authority
DE
Germany
Prior art keywords
determining
electrical properties
silicon monocrystal
monocrystal
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69120032T
Other languages
English (en)
Other versions
DE69120032T2 (de
Inventor
Izumi Fusegawa
Hirotoshi Yamagishi
Nobuyoshi Fujimaki
Yukio Karasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69120032D1 publication Critical patent/DE69120032D1/de
Publication of DE69120032T2 publication Critical patent/DE69120032T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/92—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating breakdown voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/162—Testing steps
DE69120032T 1990-11-22 1991-11-19 Verfahren zur Feststellung der elektrischen Eigenschaften eines Silizium-Monokristalles Expired - Lifetime DE69120032T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2320467A JPH06103714B2 (ja) 1990-11-22 1990-11-22 シリコン単結晶の電気特性検査方法

Publications (2)

Publication Number Publication Date
DE69120032D1 true DE69120032D1 (de) 1996-07-11
DE69120032T2 DE69120032T2 (de) 1997-01-30

Family

ID=18121779

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120032T Expired - Lifetime DE69120032T2 (de) 1990-11-22 1991-11-19 Verfahren zur Feststellung der elektrischen Eigenschaften eines Silizium-Monokristalles

Country Status (4)

Country Link
US (2) US5688319A (de)
EP (1) EP0487302B1 (de)
JP (1) JPH06103714B2 (de)
DE (1) DE69120032T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354695A (en) 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
JPH06103714B2 (ja) * 1990-11-22 1994-12-14 信越半導体株式会社 シリコン単結晶の電気特性検査方法
JPH08760B2 (ja) * 1991-03-14 1996-01-10 信越半導体株式会社 シリコンウェーハの品質検査方法
JP2613498B2 (ja) * 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JPH08337490A (ja) * 1995-06-09 1996-12-24 Shin Etsu Handotai Co Ltd 結晶欠陥の少ないシリコン単結晶及びその製造方法
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
SG165151A1 (en) 1997-04-09 2010-10-28 Memc Electronic Materials Low defect density silicon
JP3919308B2 (ja) * 1997-10-17 2007-05-23 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法ならびにこの方法で製造されたシリコン単結晶およびシリコンウエーハ
JP3460551B2 (ja) * 1997-11-11 2003-10-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
JP3747123B2 (ja) 1997-11-21 2006-02-22 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法及びシリコン単結晶ウエーハ
JP3955375B2 (ja) 1998-01-19 2007-08-08 信越半導体株式会社 シリコン単結晶の製造方法およびシリコン単結晶ウエーハ
TW508378B (en) * 1998-03-09 2002-11-01 Shinetsu Handotai Kk A method for producing a silicon single crystal wafer and a silicon single crystal wafer
TW589415B (en) 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
US6224668B1 (en) 1998-06-02 2001-05-01 Shin-Etsu Handotai Co., Ltd. Method for producing SOI substrate and SOI substrate
JPH11349393A (ja) 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
US6077343A (en) * 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
JP3943717B2 (ja) 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
JP3255114B2 (ja) 1998-06-18 2002-02-12 信越半導体株式会社 窒素ドープした低欠陥シリコン単結晶の製造方法
KR100780097B1 (ko) 1999-08-30 2007-11-29 신에쯔 한도타이 가부시키가이샤 실리콘 단결정의 제조방법, 및 그 방법으로 제조된 실리콘단결정과 실리콘 웨이퍼
US6492918B1 (en) * 1999-09-30 2002-12-10 Stmicroelectronics, Inc. Code word having data bits and code bits and method for encoding data
KR100781728B1 (ko) 2000-01-25 2007-12-03 신에쯔 한도타이 가부시키가이샤 실리콘 단결정 제조조건을 결정하는 방법 및 실리콘 웨이퍼 제조방법
WO2002002852A1 (fr) 2000-06-30 2002-01-10 Shin-Etsu Handotai Co., Ltd. Plaquette en silicium monocristallin et procede de fabrication
JP3994665B2 (ja) 2000-12-28 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびシリコン単結晶の製造方法
JP4092946B2 (ja) 2002-05-09 2008-05-28 信越半導体株式会社 シリコン単結晶ウエーハ及びエピタキシャルウエーハ並びにシリコン単結晶の製造方法
WO2004015764A2 (en) 2002-08-08 2004-02-19 Leedy Glenn J Vertical system integration
JP4382438B2 (ja) * 2002-11-14 2009-12-16 株式会社東芝 半導体ウェーハの検査方法、半導体装置の開発方法、半導体装置の製造方法、および半導体ウェーハ処理装置
JP4400281B2 (ja) 2004-03-29 2010-01-20 信越半導体株式会社 シリコンウエーハの結晶欠陥評価方法
CN104900509B (zh) * 2015-06-04 2017-10-24 苏州晶牧光材料科技有限公司 金刚石线切割硅片的表面处理方法及制绒方法
JP6471710B2 (ja) * 2016-02-24 2019-02-20 信越半導体株式会社 単結晶ウェーハの評価方法
CN112630296A (zh) * 2020-11-27 2021-04-09 南京肯特复合材料股份有限公司 一种用于铝阳极氧化膜层致密度快速检测的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997368A (en) * 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
JPS52122479A (en) * 1976-04-08 1977-10-14 Sony Corp Etching solution of silicon
DE3223664A1 (de) * 1982-06-24 1983-12-29 Siemens AG, 1000 Berlin und 8000 München Messanordnung fuer duenne schichten und duennschichtbauelemente auf scheibenfoermigen substraten
DE3246480A1 (de) * 1982-12-15 1984-06-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von halbleiterscheiben mit getternder scheibenrueckseite
JPS60146000A (ja) * 1983-12-29 1985-08-01 Fujitsu Ltd シリコンウェハの結晶評価方法
JPS63215041A (ja) * 1987-03-04 1988-09-07 Toshiba Corp 結晶欠陥評価用エツチング液
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
JPH06103714B2 (ja) * 1990-11-22 1994-12-14 信越半導体株式会社 シリコン単結晶の電気特性検査方法
JPH08760B2 (ja) * 1991-03-14 1996-01-10 信越半導体株式会社 シリコンウェーハの品質検査方法

Also Published As

Publication number Publication date
DE69120032T2 (de) 1997-01-30
US5534112A (en) 1996-07-09
EP0487302A3 (en) 1993-11-18
US5688319A (en) 1997-11-18
JPH04192345A (ja) 1992-07-10
EP0487302B1 (de) 1996-06-05
EP0487302A2 (de) 1992-05-27
JPH06103714B2 (ja) 1994-12-14

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