DE69120000T2 - Halbleiterspeichergerät mit Redundanzschaltung - Google Patents

Halbleiterspeichergerät mit Redundanzschaltung

Info

Publication number
DE69120000T2
DE69120000T2 DE69120000T DE69120000T DE69120000T2 DE 69120000 T2 DE69120000 T2 DE 69120000T2 DE 69120000 T DE69120000 T DE 69120000T DE 69120000 T DE69120000 T DE 69120000T DE 69120000 T2 DE69120000 T2 DE 69120000T2
Authority
DE
Germany
Prior art keywords
column
output
selection line
spare
scdl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69120000T
Other languages
English (en)
Other versions
DE69120000D1 (de
Inventor
Masaki Ogihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69120000D1 publication Critical patent/DE69120000D1/de
Publication of DE69120000T2 publication Critical patent/DE69120000T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE69120000T 1990-08-23 1991-08-23 Halbleiterspeichergerät mit Redundanzschaltung Expired - Lifetime DE69120000T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2219937A JPH04103099A (ja) 1990-08-23 1990-08-23 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69120000D1 DE69120000D1 (de) 1996-07-11
DE69120000T2 true DE69120000T2 (de) 1996-11-28

Family

ID=16743365

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120000T Expired - Lifetime DE69120000T2 (de) 1990-08-23 1991-08-23 Halbleiterspeichergerät mit Redundanzschaltung

Country Status (5)

Country Link
US (1) US5272672A (de)
EP (1) EP0472209B1 (de)
JP (1) JPH04103099A (de)
KR (1) KR950013400B1 (de)
DE (1) DE69120000T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5740114A (en) * 1992-03-23 1998-04-14 Matsushita Electric Industrial Co., Ltd. Redundant memory cell selecting circuit having fuses coupled to memory cell group address and memory cell block address
JPH0696598A (ja) * 1992-07-10 1994-04-08 Texas Instr Japan Ltd 半導体メモリ装置及び欠陥メモリセル救済回路
US5469401A (en) * 1992-07-14 1995-11-21 Mosaid Technologies Incorporated Column redundancy scheme for DRAM using normal and redundant column decoders programmed with defective array address and defective column address
JP2981346B2 (ja) * 1992-08-31 1999-11-22 シャープ株式会社 読み出し専用半導体記憶装置
ATE200939T1 (de) * 1993-02-19 2001-05-15 Infineon Technologies Ag Spalten-redundanz-schaltungsanordnung für einen speicher
DE69319886T2 (de) * 1993-03-31 1999-03-18 Sgs Thomson Microelectronics Halbleiterspeicher mit Speichermatrix, der mit einem einzigen Sektor assoziierte Redundantezellenspalte enthält
JP2856645B2 (ja) * 1993-09-13 1999-02-10 株式会社東芝 半導体記憶装置
EP0668562B1 (de) * 1994-02-17 1998-08-05 STMicroelectronics S.r.l. Verfahren zur Programmierung von Redundanzregistern in einer Spaltenredundanzschaltung für einen Halbleiterspeicherbaustein
DE59409008D1 (de) * 1994-08-12 2000-01-20 Siemens Ag Redundanz-Schaltungsanordnung für einen integrierten Halbleiterspeicher
GB2292236A (en) * 1995-04-04 1996-02-14 Memory Corp Plc Improved partial memory engine
JP3230795B2 (ja) * 1995-09-29 2001-11-19 シャープ株式会社 読み出し専用半導体記憶装置
US5821772A (en) * 1996-08-07 1998-10-13 Xilinx, Inc. Programmable address decoder for programmable logic device
US6137307A (en) * 1998-08-04 2000-10-24 Xilinx, Inc. Structure and method for loading wide frames of data from a narrow input bus
US6069489A (en) * 1998-08-04 2000-05-30 Xilinx, Inc. FPGA having fast configuration memory data readback
US6097210A (en) * 1998-08-04 2000-08-01 Xilinx, Inc. Multiplexer array with shifted input traces
KR20030000766A (ko) * 2001-06-27 2003-01-06 삼성전자 주식회사 반도체 메모리의 리던던시 회로
KR100498598B1 (ko) * 2003-04-30 2005-07-01 주식회사 하이닉스반도체 리페어 효율을 향상시킨 반도체 메모리 장치
US7093989B2 (en) * 2004-05-27 2006-08-22 Silverbrook Research Pty Ltd Printer comprising two uneven printhead modules and at least two printer controllers, one which spends print data to the other

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376191A (ja) * 1986-09-19 1988-04-06 Hitachi Ltd 半導体記憶装置
JPH0748315B2 (ja) * 1986-12-22 1995-05-24 三菱電機株式会社 半導体記憶装置
JP2629697B2 (ja) * 1987-03-27 1997-07-09 日本電気株式会社 半導体記憶装置
JPH01119995A (ja) * 1987-11-02 1989-05-12 Toshiba Corp 半導体メモリ
JP2618938B2 (ja) * 1987-11-25 1997-06-11 株式会社東芝 半導体記憶装置
DE68928112T2 (de) * 1988-03-18 1997-11-20 Toshiba Kawasaki Kk Masken-rom mit Ersatzspeicherzellen
NL8900026A (nl) * 1989-01-06 1990-08-01 Philips Nv Matrixgeheugen, bevattende standaardblokken, standaardsubblokken, een redundant blok, en redundante subblokken, alsmede geintegreerde schakeling bevattende meerdere van zulke matrixgeheugens.
JPH0748314B2 (ja) * 1989-02-02 1995-05-24 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
KR950013400B1 (ko) 1995-11-08
US5272672A (en) 1993-12-21
EP0472209B1 (de) 1996-06-05
JPH04103099A (ja) 1992-04-06
DE69120000D1 (de) 1996-07-11
KR920005174A (ko) 1992-03-28
EP0472209A2 (de) 1992-02-26
EP0472209A3 (en) 1992-12-23

Similar Documents

Publication Publication Date Title
DE69120000T2 (de) Halbleiterspeichergerät mit Redundanzschaltung
JPS6425398A (en) Semiconductor memory
NL193622B (nl) Halfgeleidergeheugeninrichting met redundant blok.
JPS5792500A (en) Randam-access-memory having redundancy
DE3068717D1 (en) Semiconductor memory device with redundancy
IT1255932B (it) Circuito di ridondanza di riga per un dispositivo di memoria a semiconduttore.
DE68926159D1 (de) Halbleiterspeichergerät mit verbessertem Redundanzdekoder
JPS563499A (en) Semiconductor memory device
JPS57150197A (en) Storage circuit
DE69219951D1 (de) Halbleiterspeicher
KR940016282A (ko) 로오 리던던시 회로
ATE200939T1 (de) Spalten-redundanz-schaltungsanordnung für einen speicher
DE69132951D1 (de) Halbleiter-speicher-vorrichtung
GB2138185B (en) Semiconductor memory device
EP0547919A3 (en) A semiconductor memory with power-on reset control of disabled rows
DE69223087D1 (de) DRAM-Zeilenredundanzsschaltung mit verbessertem Wirkungsgrad
DE59409008D1 (de) Redundanz-Schaltungsanordnung für einen integrierten Halbleiterspeicher
JPS57179998A (en) Memory device having redundancy
EP0579327A3 (de) Integrierter Matrixspeicher mit einer Schaltungsanordnung zum Prüfen der Adressierung.
JPS5683899A (en) Semiconductor memory device
GB2156553B (en) Semiconductor memory redundancy circuit
ATE220807T1 (de) Integrierter halbleiterspeicher mit redundanzspeicherzellen
DE69128746T2 (de) Laserstreckendecodierer für DRAM-Redundanzschema
KR940004651A (ko) 반도체 메모리 장치의 컬럼 리던던시 회로
JPS6414800A (en) Semiconductor memory device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition