DE69112668T2 - Dynamische Direktzugriffsspeicheranordnung mit statischem Spaltenoperationsmodus ohne Informationsbitvernichtung. - Google Patents
Dynamische Direktzugriffsspeicheranordnung mit statischem Spaltenoperationsmodus ohne Informationsbitvernichtung.Info
- Publication number
- DE69112668T2 DE69112668T2 DE69112668T DE69112668T DE69112668T2 DE 69112668 T2 DE69112668 T2 DE 69112668T2 DE 69112668 T DE69112668 T DE 69112668T DE 69112668 T DE69112668 T DE 69112668T DE 69112668 T2 DE69112668 T2 DE 69112668T2
- Authority
- DE
- Germany
- Prior art keywords
- data signal
- bit line
- voltage level
- signal lines
- bit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003068 static effect Effects 0.000 title claims description 17
- 230000006378 damage Effects 0.000 title description 4
- 101000801058 Homo sapiens TM2 domain-containing protein 2 Proteins 0.000 claims description 20
- 102100033691 TM2 domain-containing protein 2 Human genes 0.000 claims description 20
- 101100495835 Oryza sativa subsp. japonica Cht1 gene Proteins 0.000 claims description 9
- 230000005669 field effect Effects 0.000 description 39
- 230000004913 activation Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 7
- 102100031102 C-C motif chemokine 4 Human genes 0.000 description 5
- 102100026620 E3 ubiquitin ligase TRAF3IP2 Human genes 0.000 description 5
- 101710140859 E3 ubiquitin ligase TRAF3IP2 Proteins 0.000 description 5
- 101000777470 Mus musculus C-C motif chemokine 4 Proteins 0.000 description 5
- 101000643078 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) 40S ribosomal protein S9-A Proteins 0.000 description 5
- 101000729607 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) 40S ribosomal protein S9-B Proteins 0.000 description 5
- 101100215339 Arabidopsis thaliana ACT11 gene Proteins 0.000 description 3
- 101100215341 Arabidopsis thaliana ACT12 gene Proteins 0.000 description 3
- 101100217138 Mus musculus Actr10 gene Proteins 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 101000717877 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) 40S ribosomal protein S11-A Proteins 0.000 description 1
- 101000717881 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) 40S ribosomal protein S11-B Proteins 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
Landscapes
- Engineering & Computer Science (AREA)
- Databases & Information Systems (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2050892A JPH03252988A (ja) | 1990-03-02 | 1990-03-02 | ダイナミック型半導体メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69112668D1 DE69112668D1 (de) | 1995-10-12 |
| DE69112668T2 true DE69112668T2 (de) | 1996-05-02 |
Family
ID=12871385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69112668T Expired - Fee Related DE69112668T2 (de) | 1990-03-02 | 1991-03-01 | Dynamische Direktzugriffsspeicheranordnung mit statischem Spaltenoperationsmodus ohne Informationsbitvernichtung. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5295099A (Direct) |
| EP (1) | EP0444707B1 (Direct) |
| JP (1) | JPH03252988A (Direct) |
| KR (1) | KR960001108B1 (Direct) |
| DE (1) | DE69112668T2 (Direct) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2740063B2 (ja) * | 1990-10-15 | 1998-04-15 | 株式会社東芝 | 半導体記憶装置 |
| JP2812097B2 (ja) * | 1992-09-30 | 1998-10-15 | 日本電気株式会社 | 半導体記憶装置 |
| JP2870328B2 (ja) * | 1992-11-12 | 1999-03-17 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
| JP3359209B2 (ja) * | 1995-11-29 | 2002-12-24 | シャープ株式会社 | 半導体記憶装置及びメモリアクセス方法 |
| JP4580784B2 (ja) * | 2005-03-09 | 2010-11-17 | 株式会社東芝 | 半導体記憶装置及びそのデータ読み出し方法 |
| US7796446B2 (en) * | 2008-09-19 | 2010-09-14 | Qimonda Ag | Memory dies for flexible use and method for configuring memory dies |
| CN111912884B (zh) * | 2020-08-13 | 2023-09-08 | 南京智行信息科技有限公司 | 桥梁加固复合材料损伤识别系统 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS592996B2 (ja) * | 1976-05-24 | 1984-01-21 | 株式会社日立製作所 | 半導体記憶回路 |
| JPH0793009B2 (ja) * | 1984-12-13 | 1995-10-09 | 株式会社東芝 | 半導体記憶装置 |
| JP2609211B2 (ja) * | 1987-03-16 | 1997-05-14 | シーメンス・アクチエンゲゼルシヤフト | メモリセルの検査回路装置および方法 |
| JPS6423490A (en) * | 1987-07-17 | 1989-01-26 | Sony Corp | Memory |
| JP2644261B2 (ja) * | 1988-03-15 | 1997-08-25 | 株式会社東芝 | ダイナミック型半導体記憶装置 |
-
1990
- 1990-03-02 JP JP2050892A patent/JPH03252988A/ja active Pending
-
1991
- 1991-02-27 KR KR1019910003179A patent/KR960001108B1/ko not_active Expired - Fee Related
- 1991-03-01 EP EP91103133A patent/EP0444707B1/en not_active Expired - Lifetime
- 1991-03-01 DE DE69112668T patent/DE69112668T2/de not_active Expired - Fee Related
-
1992
- 1992-10-06 US US07/957,057 patent/US5295099A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5295099A (en) | 1994-03-15 |
| EP0444707B1 (en) | 1995-09-06 |
| DE69112668D1 (de) | 1995-10-12 |
| EP0444707A3 (Direct) | 1994-03-30 |
| EP0444707A2 (en) | 1991-09-04 |
| JPH03252988A (ja) | 1991-11-12 |
| KR960001108B1 (ko) | 1996-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3908723C2 (Direct) | ||
| DE3887224T2 (de) | Halbleiterspeicheranordnung. | |
| DE3853814T2 (de) | Integrierte Halbleiterschaltung. | |
| DE3102799C2 (de) | Halbleiter-Speichervorrichtung | |
| DE69524844T2 (de) | Speicherdaten-Sicherung für ferroelektrischen Speicher | |
| DE69427214T2 (de) | Halbleiterspeicheranordnung mit Spannung-Erhöhungsschaltung | |
| DE69124291T2 (de) | Halbleiterspeicher mit verbesserter Leseanordnung | |
| DE69227232T2 (de) | Halbleiterspeicher und dessen Siebtestverfahren | |
| DE3884022T2 (de) | Halbleiterspeicheranordnung. | |
| DE69630268T2 (de) | Datenleseschaltung einer nichtflüchtigen Halbleiterspeicheranordnung | |
| DE69419575T2 (de) | Integrierte Halbleiterschaltungsanordnung | |
| DE69120448T2 (de) | Halbleiterspeicheranordnungen von dynamischem Typus | |
| DE69027886T2 (de) | Direktzugriffsspeicher vom dynamischen Typ | |
| DE68909467T2 (de) | MOS SRAM vom internen Synchronisations-Typ mit Detektorschaltung für Adressenumwandlung. | |
| DE69118958T2 (de) | DRAM-Einrichtung mit Zweiweg-Spannungsversorgungssystem | |
| DE4002664C2 (Direct) | ||
| DE69423329T2 (de) | Halbleiterspeicher mit sehr schnellem Leseverstärker | |
| DE3838961C2 (Direct) | ||
| DE2614297A1 (de) | Mos-speicher | |
| DE68921440T2 (de) | Halbleiterspeicherschaltung mit einer verbesserten Wiederherstellungssteuerschaltung. | |
| DE3939849A1 (de) | Halbleiterspeichereinrichtung mit einem geteilten leseverstaerker und verfahren zu deren betrieb | |
| DE3685889T2 (de) | Halbleiterspeicheranordnung. | |
| DE69112692T2 (de) | Dynamische Direktzugriffspeicheranordnung mit verbesserter Speisespannung für eine beschleunigte Wiedereinschreibung von von Speicherzellen gelesenen Informationsbits. | |
| DE69112668T2 (de) | Dynamische Direktzugriffsspeicheranordnung mit statischem Spaltenoperationsmodus ohne Informationsbitvernichtung. | |
| DE3334560A1 (de) | Halbleiterspeicher |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |