DE68921440T2 - Halbleiterspeicherschaltung mit einer verbesserten Wiederherstellungssteuerschaltung. - Google Patents

Halbleiterspeicherschaltung mit einer verbesserten Wiederherstellungssteuerschaltung.

Info

Publication number
DE68921440T2
DE68921440T2 DE68921440T DE68921440T DE68921440T2 DE 68921440 T2 DE68921440 T2 DE 68921440T2 DE 68921440 T DE68921440 T DE 68921440T DE 68921440 T DE68921440 T DE 68921440T DE 68921440 T2 DE68921440 T2 DE 68921440T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
recovery control
improved recovery
control circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68921440T
Other languages
English (en)
Other versions
DE68921440D1 (de
Inventor
Takeo Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE68921440D1 publication Critical patent/DE68921440D1/de
Application granted granted Critical
Publication of DE68921440T2 publication Critical patent/DE68921440T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE68921440T 1988-12-16 1989-12-15 Halbleiterspeicherschaltung mit einer verbesserten Wiederherstellungssteuerschaltung. Expired - Fee Related DE68921440T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63317827A JPH07105140B2 (ja) 1988-12-16 1988-12-16 半導体メモリ

Publications (2)

Publication Number Publication Date
DE68921440D1 DE68921440D1 (de) 1995-04-06
DE68921440T2 true DE68921440T2 (de) 1995-11-09

Family

ID=18092496

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68921440T Expired - Fee Related DE68921440T2 (de) 1988-12-16 1989-12-15 Halbleiterspeicherschaltung mit einer verbesserten Wiederherstellungssteuerschaltung.

Country Status (4)

Country Link
US (1) US5148400A (de)
EP (1) EP0373672B1 (de)
JP (1) JPH07105140B2 (de)
DE (1) DE68921440T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04114395A (ja) * 1990-09-05 1992-04-15 Nec Corp 半導体記憶回路
JP2630059B2 (ja) * 1990-11-09 1997-07-16 日本電気株式会社 半導体メモリ装置
JP2704041B2 (ja) * 1990-11-09 1998-01-26 日本電気アイシーマイコンシステム株式会社 半導体メモリ装置
US5241503A (en) * 1991-02-25 1993-08-31 Motorola, Inc. Dynamic random access memory with improved page-mode performance and method therefor having isolator between memory cells and sense amplifiers
US5311477A (en) * 1991-07-17 1994-05-10 Sgs-Thomson Microelectronics, Inc. Integrated circuit memory device having flash clear
US5490107A (en) * 1991-12-27 1996-02-06 Fujitsu Limited Nonvolatile semiconductor memory
JP2973668B2 (ja) * 1991-12-27 1999-11-08 日本電気株式会社 高速ダイナミックランダムアクセスメモリ装置
US5687345A (en) * 1992-03-17 1997-11-11 Hitachi, Ltd. Microcomputer having CPU and built-in flash memory that is rewritable under control of the CPU analyzing a command supplied from an external device
US6414878B2 (en) 1992-03-17 2002-07-02 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US7057937B1 (en) 1992-03-17 2006-06-06 Renesas Technology Corp. Data processing apparatus having a flash memory built-in which is rewritable by use of external device
TW231343B (de) 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
CA2117967A1 (en) * 1993-10-27 1995-04-28 Thomas W. Sander Tissue repair device and apparatus and method for fabricating same
DE102004052218B3 (de) 2004-10-27 2006-04-27 Infineon Technologies Ag Speicheranordnung mit geringem Stromverbrauch

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3737879A (en) * 1972-01-05 1973-06-05 Mos Technology Inc Self-refreshing memory
US3810124A (en) * 1972-06-30 1974-05-07 Ibm Memory accessing system
JPS6012718B2 (ja) * 1980-03-28 1985-04-03 富士通株式会社 半導体ダイナミックメモリ
US4730280A (en) * 1984-11-20 1988-03-08 Fujitsu Limited Semiconductor memory device having sense amplifiers with different driving abilities
US4679172A (en) * 1985-05-28 1987-07-07 American Telephone And Telegraph Company, At&T Bell Laboratories Dynamic memory with increased data retention time
JPS62202397A (ja) * 1986-02-28 1987-09-07 Fujitsu Ltd 半導体記憶装置
JPH07105137B2 (ja) * 1987-11-17 1995-11-13 日本電気株式会社 半導体メモリ

Also Published As

Publication number Publication date
JPH07105140B2 (ja) 1995-11-13
EP0373672A2 (de) 1990-06-20
JPH02162594A (ja) 1990-06-22
EP0373672B1 (de) 1995-03-01
EP0373672A3 (de) 1991-04-17
US5148400A (en) 1992-09-15
DE68921440D1 (de) 1995-04-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee