DE69112288D1 - Hochgeschwindigkeitsoptohalbleitervorrichtung mit mehrfachen Quantentöpfen. - Google Patents
Hochgeschwindigkeitsoptohalbleitervorrichtung mit mehrfachen Quantentöpfen.Info
- Publication number
- DE69112288D1 DE69112288D1 DE69112288T DE69112288T DE69112288D1 DE 69112288 D1 DE69112288 D1 DE 69112288D1 DE 69112288 T DE69112288 T DE 69112288T DE 69112288 T DE69112288 T DE 69112288T DE 69112288 D1 DE69112288 D1 DE 69112288D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- high speed
- multiple quantum
- quantum wells
- speed opto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01716—Optically controlled superlattice or quantum well devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/218—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference using semi-conducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14789790A JP2911546B2 (ja) | 1990-06-06 | 1990-06-06 | 光半導体装置及びその製造方法 |
JP17584690 | 1990-07-03 | ||
JP2650991A JPH04212129A (ja) | 1990-07-03 | 1991-02-20 | 光半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69112288D1 true DE69112288D1 (de) | 1995-09-28 |
DE69112288T2 DE69112288T2 (de) | 1996-02-08 |
Family
ID=27285437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69112288T Expired - Fee Related DE69112288T2 (de) | 1990-06-06 | 1991-06-06 | Hochgeschwindigkeitsoptohalbleitervorrichtung mit mehrfachen Quantentöpfen. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5160993A (de) |
EP (1) | EP0461042B1 (de) |
DE (1) | DE69112288T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0492420B1 (de) * | 1990-12-20 | 1996-06-26 | Fujitsu Limited | Nichtlineare optische Vorrichtung mit verbesserter Erholungsrate |
DE69211737T2 (de) * | 1991-03-27 | 1996-10-31 | Fujitsu Ltd | Nichtlineare halbleitende optische Vorrichtung mit verbessertem Signal-Rausch-Verhältnis |
JPH06214169A (ja) * | 1992-06-08 | 1994-08-05 | Texas Instr Inc <Ti> | 制御可能な光学的周期的表面フィルタ |
US5508829A (en) * | 1992-12-18 | 1996-04-16 | International Business Machines Corporation | LTG AlGaAs non-linear optical material and devices fabricated therefrom |
DE69325708T2 (de) * | 1992-12-21 | 1999-12-30 | Furukawa Electric Co Ltd | Halbleiter-photodetektor mit verformter uebergitter und mit einer seitenkontaktstruktur |
US5488504A (en) * | 1993-08-20 | 1996-01-30 | Martin Marietta Corp. | Hybridized asymmetric fabry-perot quantum well light modulator |
FR2712732B1 (fr) * | 1993-11-17 | 1996-02-09 | France Telecom | Cellule photoréfractive. |
EP0681200B1 (de) * | 1994-05-06 | 2001-09-05 | Commissariat A L'energie Atomique | Optisch gesteuerte Lichtmodulator-Vorrichtung |
IT1268194B1 (it) * | 1994-12-23 | 1997-02-21 | Cselt Centro Studi Lab Telecom | Elemento ottico non lineare per elevatissime frequenze di cifra. |
US6500521B2 (en) * | 1999-05-14 | 2002-12-31 | Agere Systems Inc. | Stepped etalon |
US6528827B2 (en) | 2000-11-10 | 2003-03-04 | Optolynx, Inc. | MSM device and method of manufacturing same |
US7446451B2 (en) * | 2004-06-29 | 2008-11-04 | Lockheed Martin Corporation | Systems and methods for converting heat to electrical power |
WO2009013307A2 (en) * | 2007-07-26 | 2009-01-29 | Universität Konstanz | Method for producing a silicon solar cell with a back-etched emitter as well as a corresponding solar cell |
JP6794840B2 (ja) * | 2017-01-13 | 2020-12-02 | 富士通株式会社 | 光半導体装置、熱電変換素子、半導体結晶基板の製造方法及び赤外線検出装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4745452A (en) * | 1984-09-24 | 1988-05-17 | Massachusetts Institute Of Technology | Tunneling transfer devices |
JPS61212823A (ja) * | 1985-03-18 | 1986-09-20 | Nec Corp | 光変調器 |
FR2589630B1 (fr) * | 1985-07-23 | 1988-06-17 | Deveaud Benoit | Absorbant saturable a tres faibles temps de commutation |
JPH0821748B2 (ja) * | 1985-09-04 | 1996-03-04 | 株式会社日立製作所 | 半導体レ−ザ装置 |
US5047822A (en) * | 1988-03-24 | 1991-09-10 | Martin Marietta Corporation | Electro-optic quantum well device |
US4903101A (en) * | 1988-03-28 | 1990-02-20 | California Institute Of Technology | Tunable quantum well infrared detector |
EP0358229B1 (de) * | 1988-09-09 | 1996-03-06 | Fujitsu Limited | Optische Halbleitervorrichtung mit nichtlinearer Betriebscharakteristik |
US4904859A (en) * | 1989-01-17 | 1990-02-27 | American Telephone And Telegraph Company | Self electrooptic effect device employing asymmetric quantum wells |
US5036371A (en) * | 1989-09-27 | 1991-07-30 | The United States Of America As Represented By The Secretary Of The Navy | Multiple quantum well device |
-
1991
- 1991-06-06 US US07/711,548 patent/US5160993A/en not_active Expired - Lifetime
- 1991-06-06 DE DE69112288T patent/DE69112288T2/de not_active Expired - Fee Related
- 1991-06-06 EP EP91401487A patent/EP0461042B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0461042A2 (de) | 1991-12-11 |
DE69112288T2 (de) | 1996-02-08 |
US5160993A (en) | 1992-11-03 |
EP0461042B1 (de) | 1995-08-23 |
EP0461042A3 (en) | 1992-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |