FR2589630B1 - Absorbant saturable a tres faibles temps de commutation - Google Patents
Absorbant saturable a tres faibles temps de commutationInfo
- Publication number
- FR2589630B1 FR2589630B1 FR8511234A FR8511234A FR2589630B1 FR 2589630 B1 FR2589630 B1 FR 2589630B1 FR 8511234 A FR8511234 A FR 8511234A FR 8511234 A FR8511234 A FR 8511234A FR 2589630 B1 FR2589630 B1 FR 2589630B1
- Authority
- FR
- France
- Prior art keywords
- switching times
- low switching
- saturable absorbent
- saturable
- absorbent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000002745 absorbent Effects 0.000 title 1
- 239000002250 absorbent Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1061—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a variable absorption device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3523—Non-linear absorption changing by light, e.g. bleaching
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/026—Optical bistable devices based on laser effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/16—Superlattice
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8511234A FR2589630B1 (fr) | 1985-07-23 | 1985-07-23 | Absorbant saturable a tres faibles temps de commutation |
US06/883,818 US4720309A (en) | 1985-07-23 | 1986-07-09 | Saturatable absorbant with very short switching times |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8511234A FR2589630B1 (fr) | 1985-07-23 | 1985-07-23 | Absorbant saturable a tres faibles temps de commutation |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2589630A1 FR2589630A1 (fr) | 1987-05-07 |
FR2589630B1 true FR2589630B1 (fr) | 1988-06-17 |
Family
ID=9321543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8511234A Expired FR2589630B1 (fr) | 1985-07-23 | 1985-07-23 | Absorbant saturable a tres faibles temps de commutation |
Country Status (2)
Country | Link |
---|---|
US (1) | US4720309A (fr) |
FR (1) | FR2589630B1 (fr) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0821708B2 (ja) * | 1985-11-14 | 1996-03-04 | 株式会社豊田中央研究所 | 半導体素子 |
US5047822A (en) * | 1988-03-24 | 1991-09-10 | Martin Marietta Corporation | Electro-optic quantum well device |
US5185647A (en) * | 1988-12-12 | 1993-02-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Long wavelength infrared detector |
CA1299719C (fr) * | 1989-01-13 | 1992-04-28 | Hui Chun Liu | Source infrarouge a super-reseau semiconducteur |
US5132981A (en) * | 1989-05-31 | 1992-07-21 | Hitachi, Ltd. | Semiconductor optical device |
US5005176A (en) * | 1990-04-04 | 1991-04-02 | Hughes Aircraft Company | Method and apparatus for Q-switching a laser |
US5132983A (en) * | 1990-05-17 | 1992-07-21 | Cornell Research Foundation, Inc. | Optical logic using semiconductor ring lasers |
US5031190A (en) * | 1990-05-17 | 1991-07-09 | Cornell Research Foundation, Inc. | Optical logic using semiconductor ring lasers |
EP0461042B1 (fr) * | 1990-06-06 | 1995-08-23 | Fujitsu Limited | Dispositif à semi-conducteur à haute vitesse avec des puits quantiques multiples |
US5965899A (en) * | 1990-10-31 | 1999-10-12 | Lockheed Martin Corp. | Miniband transport quantum well detector |
DE69120518T2 (de) * | 1990-12-20 | 1996-10-24 | Fujitsu Ltd | Nichtlineare optische Vorrichtung mit verbesserter Erholungsrate |
US5132746A (en) * | 1991-01-04 | 1992-07-21 | International Business Machines Corporation | Biaxial-stress barrier shifts in pseudomorphic tunnel devices |
DE69211737T2 (de) * | 1991-03-27 | 1996-10-31 | Fujitsu Ltd | Nichtlineare halbleitende optische Vorrichtung mit verbessertem Signal-Rausch-Verhältnis |
US5345454A (en) * | 1991-11-06 | 1994-09-06 | At&T Bell Laboratories | Antiresonant Fabry-Perot p-i-n modulator |
US5237577A (en) * | 1991-11-06 | 1993-08-17 | At&T Bell Laboratories | Monolithically integrated fabry-perot saturable absorber |
US5265107A (en) * | 1992-02-05 | 1993-11-23 | Bell Communications Research, Inc. | Broadband absorber having multiple quantum wells of different thicknesses |
US5278855A (en) * | 1992-05-11 | 1994-01-11 | At&T Bell Laboratories | Broadband semiconductor saturable absorber |
US5374831A (en) * | 1993-04-14 | 1994-12-20 | The United States Of America As Represented By The Secretary Of The Army | Quantum well phonon modulator |
US5421910A (en) * | 1994-02-10 | 1995-06-06 | Northwestern University | Intermetallic compound semiconductor thin film |
JPH09512348A (ja) * | 1994-04-26 | 1997-12-09 | テレフオンアクチーボラゲツト エル エム エリクソン | 超格子光吸収体 |
US5410178A (en) * | 1994-08-22 | 1995-04-25 | Northwestern University | Semiconductor films |
US5668395A (en) * | 1994-11-22 | 1997-09-16 | Northwestern University | Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors |
US5650635A (en) * | 1995-07-14 | 1997-07-22 | Northwestern University | Multiple stacked Sb-based heterostructures |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3993963A (en) * | 1974-06-20 | 1976-11-23 | Bell Telephone Laboratories, Incorporated | Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same |
US4205329A (en) * | 1976-03-29 | 1980-05-27 | Bell Telephone Laboratories, Incorporated | Periodic monolayer semiconductor structures grown by molecular beam epitaxy |
US4163237A (en) * | 1978-04-24 | 1979-07-31 | Bell Telephone Laboratories, Incorporated | High mobility multilayered heterojunction devices employing modulated doping |
US4205331A (en) * | 1978-06-09 | 1980-05-27 | The United States Of America As Represented By The Secretary Of The Army | Infrared optical devices of layered structure |
JPS57176785A (en) * | 1981-04-22 | 1982-10-30 | Hitachi Ltd | Semiconductor laser device |
US4450463A (en) * | 1981-06-29 | 1984-05-22 | Rockwell International Corporation | Multiple-quantum-layer photodetector |
US4553317A (en) * | 1981-11-09 | 1985-11-19 | Canon Kabushiki Kaisha | Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors |
JPS58207684A (ja) * | 1982-05-28 | 1983-12-03 | Nippon Telegr & Teleph Corp <Ntt> | ダブルヘテロ接合型半導体発光装置 |
JPS59104189A (ja) * | 1982-12-07 | 1984-06-15 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体レ−ザ |
JPS5929484A (ja) * | 1982-08-12 | 1984-02-16 | Fujitsu Ltd | 半導体発光装置 |
NL8301215A (nl) * | 1983-04-07 | 1984-11-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken van electromagnetische straling. |
US4695857A (en) * | 1983-06-24 | 1987-09-22 | Nec Corporation | Superlattice semiconductor having high carrier density |
US4546480A (en) * | 1983-08-19 | 1985-10-08 | Xerox Corporation | Injection lasers with quantum size effect transparent waveguiding |
US4637122A (en) * | 1983-09-19 | 1987-01-20 | Honeywell Inc. | Integrated quantum well lasers for wavelength division multiplexing |
JPS60145678A (ja) * | 1984-01-10 | 1985-08-01 | Toshiba Corp | 低温真空断熱配管 |
-
1985
- 1985-07-23 FR FR8511234A patent/FR2589630B1/fr not_active Expired
-
1986
- 1986-07-09 US US06/883,818 patent/US4720309A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4720309A (en) | 1988-01-19 |
FR2589630A1 (fr) | 1987-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
TP | Transmission of property | ||
ST | Notification of lapse |