DE69211737T2 - Nichtlineare halbleitende optische Vorrichtung mit verbessertem Signal-Rausch-Verhältnis - Google Patents

Nichtlineare halbleitende optische Vorrichtung mit verbessertem Signal-Rausch-Verhältnis

Info

Publication number
DE69211737T2
DE69211737T2 DE69211737T DE69211737T DE69211737T2 DE 69211737 T2 DE69211737 T2 DE 69211737T2 DE 69211737 T DE69211737 T DE 69211737T DE 69211737 T DE69211737 T DE 69211737T DE 69211737 T2 DE69211737 T2 DE 69211737T2
Authority
DE
Germany
Prior art keywords
nonlinear
optical device
noise ratio
improved signal
semiconducting optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69211737T
Other languages
English (en)
Other versions
DE69211737D1 (de
Inventor
Atsushi Takeuchi
Hideaki Ishikawa
Shunichi Muto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69211737D1 publication Critical patent/DE69211737D1/de
Application granted granted Critical
Publication of DE69211737T2 publication Critical patent/DE69211737T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01716—Optically controlled superlattice or quantum well devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/218—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference using semi-conducting materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • G02F3/02—Optical bistable devices
    • G02F3/026—Optical bistable devices based on laser effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/1061—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a variable absorption device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
    • H01S5/3416—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers tunneling through barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
DE69211737T 1991-03-27 1992-03-26 Nichtlineare halbleitende optische Vorrichtung mit verbessertem Signal-Rausch-Verhältnis Expired - Fee Related DE69211737T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6338591 1991-03-27

Publications (2)

Publication Number Publication Date
DE69211737D1 DE69211737D1 (de) 1996-08-01
DE69211737T2 true DE69211737T2 (de) 1996-10-31

Family

ID=13227779

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69211737T Expired - Fee Related DE69211737T2 (de) 1991-03-27 1992-03-26 Nichtlineare halbleitende optische Vorrichtung mit verbessertem Signal-Rausch-Verhältnis

Country Status (3)

Country Link
US (1) US5225692A (de)
EP (1) EP0506049B1 (de)
DE (1) DE69211737T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323019A (en) * 1993-04-20 1994-06-21 The United States Of America As Represented By The Secretary Of The Army All optical multiple quantum well optical modulator
KR0138851B1 (ko) * 1994-10-24 1998-04-27 양승택 광제어 공명투과 진동자 및 그의 제조방법
US5509024A (en) * 1994-11-28 1996-04-16 Xerox Corporation Diode laser with tunnel barrier layer
US5724174A (en) * 1996-01-11 1998-03-03 The United States Of America As Represented By The Secretary Of The Navy Intersubband electro-optical modulators based on intervalley transfer in asymmetric double quantum wells
GB2320610A (en) * 1996-12-21 1998-06-24 Sharp Kk laser device
GB2320609A (en) * 1996-12-21 1998-06-24 Sharp Kk Semiconductor laser device
US6803603B1 (en) * 1999-06-23 2004-10-12 Kabushiki Kaisha Toshiba Semiconductor light-emitting element
JP2002151786A (ja) * 2000-11-10 2002-05-24 Sharp Corp 半導体レーザ素子
US6859481B2 (en) * 2002-07-16 2005-02-22 Applied Optoelectronics, Inc. Optically-pumped multiple-quantum well active region with improved distribution of optical pumping power
US6969744B2 (en) * 2003-06-19 2005-11-29 University Of Southern Mississippi Living and quasiliving cationic telechelic polymers quenched by N-substituted pyrrole and methods for their preparation
US8229563B2 (en) * 2005-01-25 2012-07-24 Cameron Health, Inc. Devices for adapting charge initiation for an implantable cardioverter-defibrillator
US8053982B2 (en) * 2008-04-30 2011-11-08 Hewlett-Packard Development Company, L.P. Light-emitting diodes with carrier extraction electrodes

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665412A (en) * 1985-06-19 1987-05-12 Ga Technologies Inc. Coupled heterostructure superlattice devices
FR2589630B1 (fr) * 1985-07-23 1988-06-17 Deveaud Benoit Absorbant saturable a tres faibles temps de commutation
JPH0821748B2 (ja) * 1985-09-04 1996-03-04 株式会社日立製作所 半導体レ−ザ装置
EP0358229B1 (de) * 1988-09-09 1996-03-06 Fujitsu Limited Optische Halbleitervorrichtung mit nichtlinearer Betriebscharakteristik
US5113231A (en) * 1989-09-07 1992-05-12 California Institute Of Technology Quantum-effect semiconductor devices
JP2646799B2 (ja) * 1989-12-21 1997-08-27 日本電気株式会社 半導体多層膜
US5023879A (en) * 1990-04-26 1991-06-11 The Regents Of The University Of California Optically pumped step quantum well IR source
US5160993A (en) * 1990-06-06 1992-11-03 Fujitsu Limited High speed optosemiconductor device having multiple quantum wells
FR2663064B1 (fr) * 1990-06-12 1992-10-02 Francois Michel Procede d'assemblage a sec d'elements de construction.

Also Published As

Publication number Publication date
EP0506049A2 (de) 1992-09-30
DE69211737D1 (de) 1996-08-01
EP0506049B1 (de) 1996-06-26
US5225692A (en) 1993-07-06
EP0506049A3 (en) 1993-02-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee