DE68913187D1 - Peltier-kühlungseinrichtung mit supraleiter-halbleiter-verbindung. - Google Patents

Peltier-kühlungseinrichtung mit supraleiter-halbleiter-verbindung.

Info

Publication number
DE68913187D1
DE68913187D1 DE89910784T DE68913187T DE68913187D1 DE 68913187 D1 DE68913187 D1 DE 68913187D1 DE 89910784 T DE89910784 T DE 89910784T DE 68913187 T DE68913187 T DE 68913187T DE 68913187 D1 DE68913187 D1 DE 68913187D1
Authority
DE
Germany
Prior art keywords
supralital
cooling device
peltier cooling
semiconductor connection
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89910784T
Other languages
English (en)
Other versions
DE68913187T2 (de
Inventor
Matthew Skertic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of DE68913187D1 publication Critical patent/DE68913187D1/de
Application granted granted Critical
Publication of DE68913187T2 publication Critical patent/DE68913187T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H10N10/8552—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen the compounds being superconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/93—Thermoelectric, e.g. peltier effect cooling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/888—Refrigeration
    • Y10S505/894—Cyclic cryogenic system, e.g. sterling, gifford-mcmahon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/888—Refrigeration
    • Y10S505/897—Cryogenic media transfer
DE68913187T 1988-08-08 1989-06-19 Peltier-kühlungseinrichtung mit supraleiter-halbleiter-verbindung. Expired - Fee Related DE68913187T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/229,883 US5006505A (en) 1988-08-08 1988-08-08 Peltier cooling stage utilizing a superconductor-semiconductor junction
PCT/US1989/002664 WO1990001806A1 (en) 1988-08-08 1989-06-19 Peltier cooling stage utilizing a superconductor-semiconductor junction

Publications (2)

Publication Number Publication Date
DE68913187D1 true DE68913187D1 (de) 1994-03-24
DE68913187T2 DE68913187T2 (de) 1994-11-17

Family

ID=22863047

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68913187T Expired - Fee Related DE68913187T2 (de) 1988-08-08 1989-06-19 Peltier-kühlungseinrichtung mit supraleiter-halbleiter-verbindung.

Country Status (10)

Country Link
US (1) US5006505A (de)
EP (1) EP0381754B1 (de)
JP (1) JPH03501910A (de)
AU (1) AU620447B2 (de)
CA (1) CA1323669C (de)
DE (1) DE68913187T2 (de)
ES (1) ES2014842A6 (de)
IL (1) IL90707A (de)
TR (1) TR24370A (de)
WO (1) WO1990001806A1 (de)

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US5352299A (en) * 1987-06-26 1994-10-04 Sharp Kabushiki Kaisha Thermoelectric material
US5057490A (en) * 1989-10-26 1991-10-15 Hughes Aircraft Company Low-temperature thermoelectric refrigerating device using current-carrying superconducting mode/nonsuperconducting mode junctions
US5171372A (en) * 1990-09-17 1992-12-15 Marlow Industries, Inc. Thermoelectric cooler and fabrication method
US5747418A (en) * 1992-02-25 1998-05-05 The United States Of America As Represented By The United States Department Of Energy Superconducting thermoelectric generator
JP2636119B2 (ja) * 1992-09-08 1997-07-30 工業技術院長 熱電素子シートとその製造方法
JP3451107B2 (ja) * 1992-10-05 2003-09-29 株式会社エコ・トゥエンティーワン 電子冷却装置
JPH06350146A (ja) * 1993-06-14 1994-12-22 Sharp Corp 超電導装置
JPH0737706A (ja) * 1993-07-19 1995-02-07 Murata Mfg Co Ltd 半導体セラミック素子
US5834828A (en) * 1993-09-20 1998-11-10 The United States Of America, As Represented By The Secretary Of The Army Nanoporous semiconductor material and fabrication technique for use as thermoelectric elements
US5458867A (en) * 1994-09-09 1995-10-17 The United States Of America As Represented By The Secretary Of Commerce Process for the chemical preparation of bismuth telluride
US5551244A (en) * 1994-11-18 1996-09-03 Martin Marietta Corporation Hybrid thermoelectric/Joule-Thomson cryostat for cooling detectors
JP3860070B2 (ja) * 1994-11-21 2006-12-20 株式会社ワイ・ワイ・エル 熱電冷却型パワーリード
JP3369349B2 (ja) * 1995-03-02 2003-01-20 株式会社エコ・トゥエンティーワン 熱電変換装置
US5525162A (en) * 1995-06-26 1996-06-11 The United States Of America As Represented By The Secretary Of The Army Thermal conductivity enhancement technique
JP3007956B2 (ja) * 1996-11-14 2000-02-14 核融合科学研究所長 傾斜機能材を用いた超伝導コイル用電流リード
AU6783598A (en) 1997-03-31 1998-10-22 Research Triangle Institute Thin-film thermoelectric device and fabrication method of same
JP4058548B2 (ja) * 1997-06-27 2008-03-12 独立行政法人理化学研究所 粒子線検出装置
GB9716718D0 (en) * 1997-08-08 1997-10-15 Delta Theta Ltd Thermoelectric cooling
US6207888B1 (en) 1997-10-10 2001-03-27 Marlow Industries, Inc. Semiconductor materials with skutterudite type crystal lattice structures optimized for selected thermoelectric properties and methods of preparation
US6369314B1 (en) 1997-10-10 2002-04-09 Marlow Industries, Inc. Semiconductor materials with partially filled skutterudite crystal lattice structures optimized for selected thermoelectric properties and methods of preparation
US6100463A (en) * 1997-11-18 2000-08-08 The Boeing Company Method for making advanced thermoelectric devices
US6586835B1 (en) * 1998-08-31 2003-07-01 Micron Technology, Inc. Compact system module with built-in thermoelectric cooling
DE10132763B4 (de) * 2001-07-10 2007-10-11 Robert Bosch Gmbh Integrierte Halbleiterschaltung, Verfahren zum Kühlen eines Mikrowellenschaltungsbereiches und Verfahren zum Herstellen einer integrierten Halbleiterschaltung
US20040251539A1 (en) * 2001-09-12 2004-12-16 Faris Sadeg M. Thermoelectric cooler array
US6941761B2 (en) * 2003-06-09 2005-09-13 Tecumseh Products Company Thermoelectric heat lifting application
US20050236028A1 (en) * 2003-11-18 2005-10-27 Strnad Richard J Heat to cooling converter
US20110151609A1 (en) * 2004-07-26 2011-06-23 Kuo-Ching Chiang Method for Forming Thin Film Heat Dissipater
WO2006035255A2 (en) * 2004-09-29 2006-04-06 Elthom Enterprises Limited A method of transformation of heat and work in reversible cyclic thermoelectrical cycles transformations and a thermoelectric transformer
US20070101737A1 (en) * 2005-11-09 2007-05-10 Masao Akei Refrigeration system including thermoelectric heat recovery and actuation
US7310953B2 (en) * 2005-11-09 2007-12-25 Emerson Climate Technologies, Inc. Refrigeration system including thermoelectric module
JP2008108900A (ja) * 2006-10-25 2008-05-08 Toshiba Corp 熱電変換モジュールおよび熱電変換装置
US9010131B2 (en) * 2009-07-07 2015-04-21 Raytheon Company Methods and apparatus for Dewar and cold shield assemblies
US20130239591A1 (en) * 2012-03-16 2013-09-19 Raytheon Company Thermal electric cooler and method
FR3018352B1 (fr) * 2014-03-06 2016-04-01 Soc Fr Detecteurs Infrarouges Sofradir Dispositif de detection refroidi
CN106052452A (zh) * 2016-06-03 2016-10-26 清华大学 一种基于低熔点金属相变材料的复合式相变热沉
JP6781982B2 (ja) * 2016-07-14 2020-11-11 国立研究開発法人産業技術総合研究所 熱電変換モジュールとその製造方法
US10804063B2 (en) * 2016-09-15 2020-10-13 Baker Hughes, A Ge Company, Llc Multi-layer X-ray source fabrication
WO2019018093A2 (en) * 2017-06-19 2019-01-24 Massachusetts Institute Of Technology APPARATUS, SYSTEMS AND METHODS FOR GENERATING THERMOPHORSTANCE
JP7232978B2 (ja) * 2017-12-11 2023-03-06 パナソニックＩｐマネジメント株式会社 赤外線センサおよび赤外線センサのボロメータ赤外線受光部を冷却する方法
US10720372B2 (en) 2018-10-26 2020-07-21 Microsoft Technology Licensing, Llc Conduction cooling for circuit boards
CN110323325A (zh) * 2019-07-31 2019-10-11 广东电网有限责任公司 一种低漏热珀尔帖电流引线装置
WO2023049657A1 (en) * 2021-09-22 2023-03-30 Metox Technologies, Inc. Advanced susceptor for reel-to-reel operations

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US30652A (en) * 1860-11-13 Improvement in looms for weaving hair-cloth
NL270368A (de) * 1960-11-16
DE1243743B (de) * 1961-09-19 1967-07-06 Siemens Ag Thermoelektrische Anordnung
US3414405A (en) * 1965-08-16 1968-12-03 Semi Elements Inc Alloys for making thermoelectric devices
US4362023A (en) * 1981-07-29 1982-12-07 The United States Of America As Represented By The United States Department Of Energy Thermoelectric refrigerator having improved temperature stabilization means
JPH0812933B2 (ja) * 1985-04-03 1996-02-07 株式会社トーキン 熱電気変換装置の製造方法
FI872894A (fi) * 1987-07-01 1989-01-02 Outokumpu Oy Kylelement.
JPS649671A (en) * 1987-07-01 1989-01-12 Mitsubishi Electric Corp Peltier cooler

Also Published As

Publication number Publication date
WO1990001806A1 (en) 1990-02-22
AU4229789A (en) 1990-03-05
TR24370A (tr) 1991-09-20
EP0381754B1 (de) 1994-02-16
IL90707A (en) 1993-01-14
AU620447B2 (en) 1992-02-20
JPH03501910A (ja) 1991-04-25
EP0381754A1 (de) 1990-08-16
IL90707A0 (en) 1990-01-18
ES2014842A6 (es) 1990-07-16
DE68913187T2 (de) 1994-11-17
CA1323669C (en) 1993-10-26
US5006505A (en) 1991-04-09

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Legal Events

Date Code Title Description
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee