DE69325708T2 - Halbleiter-photodetektor mit verformter uebergitter und mit einer seitenkontaktstruktur - Google Patents
Halbleiter-photodetektor mit verformter uebergitter und mit einer seitenkontaktstrukturInfo
- Publication number
- DE69325708T2 DE69325708T2 DE69325708T DE69325708T DE69325708T2 DE 69325708 T2 DE69325708 T2 DE 69325708T2 DE 69325708 T DE69325708 T DE 69325708T DE 69325708 T DE69325708 T DE 69325708T DE 69325708 T2 DE69325708 T2 DE 69325708T2
- Authority
- DE
- Germany
- Prior art keywords
- side contact
- contact structure
- top grid
- semiconductor photodetector
- deformed top
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4356786A JPH06188449A (ja) | 1992-12-21 | 1992-12-21 | Msm型受光素子 |
JP5105091A JPH06296037A (ja) | 1993-04-07 | 1993-04-07 | 半導体受光素子 |
PCT/JP1993/001848 WO1994015367A1 (en) | 1992-12-21 | 1993-12-21 | Distorted superlattice semiconductor photodetecting element with side-contact structure |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69325708D1 DE69325708D1 (de) | 1999-08-26 |
DE69325708T2 true DE69325708T2 (de) | 1999-12-30 |
Family
ID=26445441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69325708T Expired - Fee Related DE69325708T2 (de) | 1992-12-21 | 1993-12-21 | Halbleiter-photodetektor mit verformter uebergitter und mit einer seitenkontaktstruktur |
Country Status (4)
Country | Link |
---|---|
US (1) | US5608230A (de) |
EP (1) | EP0627771B1 (de) |
DE (1) | DE69325708T2 (de) |
WO (1) | WO1994015367A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2810635C1 (ru) * | 2023-07-25 | 2023-12-28 | Акционерное общество "НПО "Орион" | Способ изготовления двухспектрального фоточувствительного элемента на основе барьера Шоттки по меза-технологии |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0148597B1 (ko) * | 1994-11-23 | 1998-10-15 | 정선종 | 왜곡 성장층을 이용한 금속/반도체 접합 쇼트키 다이오드 광소자 |
US6222200B1 (en) | 1999-04-19 | 2001-04-24 | Nortel Networks Limited | Photodetector with spectrally extended responsivity |
AU5405400A (en) * | 1999-06-14 | 2001-01-02 | Carlos J.R.P. Augusto | Stacked wavelength-selective opto-electronic device |
US7442953B2 (en) * | 1999-06-14 | 2008-10-28 | Quantum Semiconductor Llc | Wavelength selective photonics device |
JP3589920B2 (ja) * | 1999-12-10 | 2004-11-17 | Nec化合物デバイス株式会社 | 半導体受光素子 |
US6706542B1 (en) * | 2000-01-07 | 2004-03-16 | Triquint Technology Holding Co. | Application of InAIAs double-layer to block dopant out-diffusion in III-V device Fabrication |
JP3652977B2 (ja) * | 2000-06-06 | 2005-05-25 | ユーディナデバイス株式会社 | 半導体受光装置およびその製造方法 |
WO2004109235A2 (de) * | 2003-06-11 | 2004-12-16 | Daimlerchrysler Ag | Optisches sensorelement und sensoranordnung |
US20050161695A1 (en) * | 2003-09-05 | 2005-07-28 | Sae Magnetics (H.K.) Ltd. | Systems and methods having a metal-semiconductor-metal (MSM) photodetector with buried oxide layer |
WO2010074964A2 (en) * | 2008-12-23 | 2010-07-01 | Intel Corporation | Group iii-v mosfet having metal diffusion regions |
JP2016535436A (ja) * | 2013-10-21 | 2016-11-10 | センサー エレクトロニック テクノロジー インコーポレイテッド | 複合半導体層を含むヘテロ構造 |
FR3045941B1 (fr) | 2015-12-16 | 2018-02-02 | Thales | Element detecteur de rayonnement et imageur comprenant un ensemble d'elements detecteurs de rayonnement |
FR3045942B1 (fr) | 2015-12-16 | 2018-01-12 | Thales | Element detecteur de rayonnement et imageur comprenant un ensemble d'elements detecteurs de rayonnement |
CN108428763B (zh) * | 2018-04-18 | 2024-06-04 | 厦门大学 | 一种应力调控紫外多波长msm光电探测器及其制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60195981A (ja) * | 1984-03-19 | 1985-10-04 | Fujitsu Ltd | 半導体受光装置 |
JPS60262473A (ja) * | 1984-06-08 | 1985-12-25 | Fujitsu Ltd | 光半導体装置 |
JPH0654785B2 (ja) * | 1984-12-25 | 1994-07-20 | 住友電気工業株式会社 | 変調ド−ピングトランジスタ |
JP2590817B2 (ja) * | 1986-03-18 | 1997-03-12 | 日本電気株式会社 | ホトデイテクタ |
JPS6380520A (ja) * | 1986-09-24 | 1988-04-11 | Nec Corp | 半導体装置 |
JPS6398158A (ja) * | 1986-10-15 | 1988-04-28 | Hitachi Ltd | ホトダイオ−ド |
US5238869A (en) * | 1988-07-25 | 1993-08-24 | Texas Instruments Incorporated | Method of forming an epitaxial layer on a heterointerface |
JPH02199877A (ja) * | 1989-01-27 | 1990-08-08 | Nec Corp | 光受信器及び光電子集積回路 |
US5132981A (en) * | 1989-05-31 | 1992-07-21 | Hitachi, Ltd. | Semiconductor optical device |
EP0426419B1 (de) * | 1989-10-31 | 1997-09-10 | The Furukawa Electric Co., Ltd. | Halbleiterlaser-Elemente und Verfahren zu ihrer Herstellung |
US5093695A (en) * | 1990-05-18 | 1992-03-03 | At&T Bell Laboratories | Controllable semiconductor modulator having interleaved contacts |
DE69112288T2 (de) * | 1990-06-06 | 1996-02-08 | Fujitsu Ltd | Hochgeschwindigkeitsoptohalbleitervorrichtung mit mehrfachen Quantentöpfen. |
JPH04106984A (ja) * | 1990-08-27 | 1992-04-08 | Hitachi Ltd | 半導体装置 |
-
1993
- 1993-12-21 DE DE69325708T patent/DE69325708T2/de not_active Expired - Fee Related
- 1993-12-21 EP EP94903032A patent/EP0627771B1/de not_active Expired - Lifetime
- 1993-12-21 US US08/290,918 patent/US5608230A/en not_active Expired - Lifetime
- 1993-12-21 WO PCT/JP1993/001848 patent/WO1994015367A1/ja active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2810635C1 (ru) * | 2023-07-25 | 2023-12-28 | Акционерное общество "НПО "Орион" | Способ изготовления двухспектрального фоточувствительного элемента на основе барьера Шоттки по меза-технологии |
Also Published As
Publication number | Publication date |
---|---|
WO1994015367A1 (en) | 1994-07-07 |
EP0627771B1 (de) | 1999-07-21 |
EP0627771A1 (de) | 1994-12-07 |
EP0627771A4 (de) | 1997-01-22 |
US5608230A (en) | 1997-03-04 |
DE69325708D1 (de) | 1999-08-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |