DE69329352T2 - Integrierte Halbleiteranordnung mit einer Leistungsumwandlungsschaltung und Schutzvorrichtungen - Google Patents

Integrierte Halbleiteranordnung mit einer Leistungsumwandlungsschaltung und Schutzvorrichtungen

Info

Publication number
DE69329352T2
DE69329352T2 DE69329352T DE69329352T DE69329352T2 DE 69329352 T2 DE69329352 T2 DE 69329352T2 DE 69329352 T DE69329352 T DE 69329352T DE 69329352 T DE69329352 T DE 69329352T DE 69329352 T2 DE69329352 T2 DE 69329352T2
Authority
DE
Germany
Prior art keywords
semiconductor device
conversion circuit
power conversion
protection devices
integrated semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69329352T
Other languages
English (en)
Other versions
DE69329352D1 (de
Inventor
Hiroshi Furuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69329352D1 publication Critical patent/DE69329352D1/de
Application granted granted Critical
Publication of DE69329352T2 publication Critical patent/DE69329352T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Emergency Protection Circuit Devices (AREA)
DE69329352T 1992-02-21 1993-02-18 Integrierte Halbleiteranordnung mit einer Leistungsumwandlungsschaltung und Schutzvorrichtungen Expired - Lifetime DE69329352T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7252492 1992-02-21

Publications (2)

Publication Number Publication Date
DE69329352D1 DE69329352D1 (de) 2000-10-12
DE69329352T2 true DE69329352T2 (de) 2001-04-12

Family

ID=13491810

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69329352T Expired - Lifetime DE69329352T2 (de) 1992-02-21 1993-02-18 Integrierte Halbleiteranordnung mit einer Leistungsumwandlungsschaltung und Schutzvorrichtungen

Country Status (5)

Country Link
US (1) US5416661A (de)
EP (1) EP0556832B1 (de)
JP (1) JP2910474B2 (de)
KR (1) KR950010872B1 (de)
DE (1) DE69329352T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025737A (en) * 1996-11-27 2000-02-15 Altera Corporation Circuitry for a low internal voltage integrated circuit
US6147511A (en) 1996-05-28 2000-11-14 Altera Corporation Overvoltage-tolerant interface for integrated circuits
KR100251512B1 (ko) 1997-07-12 2000-04-15 구본준 횡전계방식 액정표시장치
US6255850B1 (en) 1997-10-28 2001-07-03 Altera Corporation Integrated circuit with both clamp protection and high impedance protection from input overshoot
TW440986B (en) * 1998-06-09 2001-06-16 Winbond Electronics Corp Electrostatic discharge event detector
US6157530A (en) 1999-01-04 2000-12-05 International Business Machines Corporation Method and apparatus for providing ESD protection
WO2000067323A1 (en) * 1999-04-28 2000-11-09 Hitachi, Ltd. Integrated circuit with protection against electrostatic damage
JP3495031B2 (ja) * 2002-05-28 2004-02-09 沖電気工業株式会社 半導体装置の静電破壊防止保護回路
FR2872629B1 (fr) * 2004-06-30 2007-07-13 St Microelectronics Sa Circuit integre ayant une borne d'entree/sortie configurable dans une gamme de tension determinee
JP2006237101A (ja) * 2005-02-23 2006-09-07 Nec Electronics Corp 半導体集積回路装置
TWI370515B (en) * 2006-09-29 2012-08-11 Megica Corp Circuit component
CN110346994B (zh) * 2019-07-23 2022-07-08 昆山国显光电有限公司 阵列基板和显示面板

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253090A (ja) * 1984-05-30 1985-12-13 Hitachi Ltd 半導体装置
FR2613131B1 (fr) * 1987-03-27 1989-07-28 Thomson Csf Circuit integre protege contre des surtensions
JPS6455857A (en) * 1987-08-26 1989-03-02 Nec Corp Semiconductor integrated device
US5063304A (en) * 1990-04-27 1991-11-05 Texas Instruments Incorporated Integrated circuit with improved on-chip power supply control

Also Published As

Publication number Publication date
EP0556832A1 (de) 1993-08-25
EP0556832B1 (de) 2000-09-06
KR950010872B1 (ko) 1995-09-25
US5416661A (en) 1995-05-16
DE69329352D1 (de) 2000-10-12
JPH05299585A (ja) 1993-11-12
KR930018717A (ko) 1993-09-22
JP2910474B2 (ja) 1999-06-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

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