DE69942796D1 - Halbleiteranordnung mit einem Leistungselement und einer Schutzschaltung - Google Patents
Halbleiteranordnung mit einem Leistungselement und einer SchutzschaltungInfo
- Publication number
- DE69942796D1 DE69942796D1 DE69942796T DE69942796T DE69942796D1 DE 69942796 D1 DE69942796 D1 DE 69942796D1 DE 69942796 T DE69942796 T DE 69942796T DE 69942796 T DE69942796 T DE 69942796T DE 69942796 D1 DE69942796 D1 DE 69942796D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- protection circuit
- power element
- power
- protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Power Conversion In General (AREA)
- Lead Frames For Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34959798A JP3548024B2 (ja) | 1998-12-09 | 1998-12-09 | 半導体装置およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69942796D1 true DE69942796D1 (de) | 2010-11-11 |
Family
ID=18404813
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69942812T Expired - Lifetime DE69942812D1 (de) | 1998-12-09 | 1999-11-24 | Verfahren zur Herstellung einer Halbleitervorrichtung |
DE69942796T Expired - Lifetime DE69942796D1 (de) | 1998-12-09 | 1999-11-24 | Halbleiteranordnung mit einem Leistungselement und einer Schutzschaltung |
DE69942813T Expired - Lifetime DE69942813D1 (de) | 1998-12-09 | 1999-11-24 | Halbleitervorrichtung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69942812T Expired - Lifetime DE69942812D1 (de) | 1998-12-09 | 1999-11-24 | Verfahren zur Herstellung einer Halbleitervorrichtung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69942813T Expired - Lifetime DE69942813D1 (de) | 1998-12-09 | 1999-11-24 | Halbleitervorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6262902B1 (de) |
EP (3) | EP2012357B1 (de) |
JP (1) | JP3548024B2 (de) |
DE (3) | DE69942812D1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3826749B2 (ja) * | 2001-08-22 | 2006-09-27 | 株式会社日立製作所 | シャント抵抗を備えた電力変換装置 |
DE10143932B4 (de) | 2001-09-07 | 2006-04-27 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Shunt-Widerstandanordnung |
CA2461627A1 (en) * | 2001-09-27 | 2003-04-03 | Roni Zvuloni | Apparatus and method for cryosurgical treatment of tumors of the breast |
JP2003218318A (ja) * | 2002-01-21 | 2003-07-31 | Mitsubishi Electric Corp | 半導体パワーモジュール、半導体パワーモジュールに用いる絶縁基板及び該絶縁基板の製造方法 |
US6653812B1 (en) | 2002-01-31 | 2003-11-25 | Analog Devices, Inc. | Space vector modulation methods and structures for electric-motor control |
JP4236909B2 (ja) * | 2002-11-13 | 2009-03-11 | 三菱電機株式会社 | 電力半導体モジュール |
US20040227476A1 (en) * | 2002-12-19 | 2004-11-18 | International Rectifier Corp. | Flexible inverter power module for motor drives |
JP2004343820A (ja) * | 2003-05-13 | 2004-12-02 | Mitsubishi Electric Corp | 電力変換装置 |
KR100669327B1 (ko) * | 2004-10-11 | 2007-01-15 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 장치 |
ES2655254T3 (es) | 2006-01-16 | 2018-02-19 | Mitsubishi Electric Corporation | Circuito de control de motor y unidad exterior de aparato de aire acondicionado |
US7619302B2 (en) * | 2006-05-23 | 2009-11-17 | International Rectifier Corporation | Highly efficient both-side-cooled discrete power package, especially basic element for innovative power modules |
JP5354144B2 (ja) * | 2007-10-22 | 2013-11-27 | 東芝キヤリア株式会社 | インバータ |
US8482904B2 (en) * | 2010-05-25 | 2013-07-09 | Lear Corporation | Power module with current sensing |
JP5800192B2 (ja) | 2011-10-11 | 2015-10-28 | 富士電機株式会社 | フォトカプラの出力信号受信回路 |
DE102012211924B4 (de) * | 2012-07-09 | 2014-02-13 | Infineon Technologies Ag | Halbleitermodul mit einem in einer Anschlusslasche integrierten Shunt-Widerstand und Verfahren zur Ermittlung eines durch einen Lastanschluss eines Halbleitermoduls fließenden Stromes |
CN102999009B (zh) * | 2012-12-11 | 2016-01-20 | 深圳市麦格米特驱动技术有限公司 | 机床控制电路 |
JP5930954B2 (ja) * | 2012-12-14 | 2016-06-08 | 三菱電機株式会社 | パワーモジュール |
US9140735B2 (en) * | 2013-05-03 | 2015-09-22 | Infineon Technologies Ag | Integration of current measurement in wiring structure of an electronic circuit |
JPWO2015005181A1 (ja) * | 2013-07-08 | 2017-03-02 | 株式会社村田製作所 | 電力変換部品 |
JP2015073261A (ja) * | 2013-09-03 | 2015-04-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6487280B2 (ja) * | 2015-06-11 | 2019-03-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6894181B2 (ja) * | 2015-06-17 | 2021-06-30 | ダイキン工業株式会社 | インバータ装置 |
CN105609493B (zh) * | 2016-03-22 | 2018-05-11 | 富士电机(中国)有限公司 | 一种集成双向升降压功能的八合一igbt模块 |
JP6691416B2 (ja) * | 2016-04-04 | 2020-04-28 | ダイキン工業株式会社 | 電子回路装置 |
JP6804646B2 (ja) * | 2017-06-22 | 2020-12-23 | 三菱電機株式会社 | 半導体モジュール |
WO2020191848A1 (zh) * | 2019-03-25 | 2020-10-01 | 广东美的制冷设备有限公司 | 集成式控制器及其控制方法和制冷设备 |
CN109861501A (zh) * | 2019-03-25 | 2019-06-07 | 广东美的制冷设备有限公司 | 智能功率模块和空调器 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3676807A (en) * | 1971-05-19 | 1972-07-11 | Tektronix Inc | Film attenuator with distributed capacitance high frequency compensation |
JPH0231457A (ja) * | 1988-07-21 | 1990-02-01 | Matsushita Electric Ind Co Ltd | 発光素子駆動用半導体装置 |
JPH0834705B2 (ja) * | 1988-11-16 | 1996-03-29 | 株式会社大林組 | 開閉器 |
JP2658427B2 (ja) * | 1989-01-17 | 1997-09-30 | 富士電機株式会社 | 電力変換用半導体素子のスナバ回路とそのモジュール装置 |
US5214407A (en) * | 1991-11-06 | 1993-05-25 | Hewlett-Packard Company | High performance current shunt |
JP2979930B2 (ja) * | 1993-10-28 | 1999-11-22 | 富士電機株式会社 | 電力用半導体装置のパッケージ |
JP3325697B2 (ja) * | 1994-01-20 | 2002-09-17 | 三菱電機株式会社 | パワーデバイスの制御装置およびモータの駆動制御装置 |
JPH09312376A (ja) * | 1996-05-21 | 1997-12-02 | Fuji Electric Co Ltd | 半導体装置 |
WO1998010508A1 (fr) * | 1996-09-06 | 1998-03-12 | Hitachi, Ltd. | Dispositif a semi-conducteur |
JP3008924B2 (ja) * | 1998-04-10 | 2000-02-14 | 富士電機株式会社 | パワー素子のドライブ回路 |
-
1998
- 1998-12-09 JP JP34959798A patent/JP3548024B2/ja not_active Expired - Lifetime
-
1999
- 1999-11-23 US US09/447,806 patent/US6262902B1/en not_active Expired - Lifetime
- 1999-11-24 EP EP08167294A patent/EP2012357B1/de not_active Expired - Lifetime
- 1999-11-24 EP EP99309398A patent/EP1009030B1/de not_active Expired - Lifetime
- 1999-11-24 DE DE69942812T patent/DE69942812D1/de not_active Expired - Lifetime
- 1999-11-24 EP EP08167298A patent/EP2015361B1/de not_active Expired - Lifetime
- 1999-11-24 DE DE69942796T patent/DE69942796D1/de not_active Expired - Lifetime
- 1999-11-24 DE DE69942813T patent/DE69942813D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP2015361A3 (de) | 2009-07-29 |
EP1009030A2 (de) | 2000-06-14 |
US6262902B1 (en) | 2001-07-17 |
JP3548024B2 (ja) | 2004-07-28 |
EP2012357A2 (de) | 2009-01-07 |
EP2012357A3 (de) | 2009-07-29 |
JP2000174202A (ja) | 2000-06-23 |
EP2012357B1 (de) | 2010-09-29 |
EP1009030A3 (de) | 2001-10-17 |
DE69942812D1 (de) | 2010-11-11 |
EP1009030B1 (de) | 2010-09-29 |
EP2015361A2 (de) | 2009-01-14 |
EP2015361B1 (de) | 2010-09-29 |
DE69942813D1 (de) | 2010-11-11 |
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