DE69627788D1 - Halbleiteranordnung mit einem Leitergitter und einer Wärmesenke - Google Patents

Halbleiteranordnung mit einem Leitergitter und einer Wärmesenke

Info

Publication number
DE69627788D1
DE69627788D1 DE69627788T DE69627788T DE69627788D1 DE 69627788 D1 DE69627788 D1 DE 69627788D1 DE 69627788 T DE69627788 T DE 69627788T DE 69627788 T DE69627788 T DE 69627788T DE 69627788 D1 DE69627788 D1 DE 69627788D1
Authority
DE
Germany
Prior art keywords
heat sink
semiconductor arrangement
conductor grid
conductor
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69627788T
Other languages
English (en)
Other versions
DE69627788T2 (de
Inventor
Gourab Majumdar
Satoshi Mori
Sukehisa Noda
Tooru Iwagami
Yoshio Takagi
Hisashi Kawafuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69627788D1 publication Critical patent/DE69627788D1/de
Application granted granted Critical
Publication of DE69627788T2 publication Critical patent/DE69627788T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
DE69627788T 1995-11-30 1996-07-09 Halbleiteranordnung mit einem Leitergitter und einer Wärmesenke Expired - Lifetime DE69627788T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31255895 1995-11-30
JP31255895A JP3406753B2 (ja) 1995-11-30 1995-11-30 半導体装置および半導体モジュール

Publications (2)

Publication Number Publication Date
DE69627788D1 true DE69627788D1 (de) 2003-06-05
DE69627788T2 DE69627788T2 (de) 2004-02-26

Family

ID=18030665

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69627788T Expired - Lifetime DE69627788T2 (de) 1995-11-30 1996-07-09 Halbleiteranordnung mit einem Leitergitter und einer Wärmesenke

Country Status (4)

Country Link
US (1) US5672910A (de)
EP (1) EP0777271B1 (de)
JP (1) JP3406753B2 (de)
DE (1) DE69627788T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2334814A (en) * 1998-02-25 1999-09-01 Motorola Inc Moulded electronic device package with a heat sink
JP2004357384A (ja) * 2003-05-28 2004-12-16 Toyoda Mach Works Ltd ヒートシンクへのスイッチング素子取付構造
JP4246598B2 (ja) * 2003-10-22 2009-04-02 三菱電機株式会社 電力用半導体装置
JP4254527B2 (ja) * 2003-12-24 2009-04-15 株式会社デンソー 半導体装置
JP2007073743A (ja) * 2005-09-07 2007-03-22 Denso Corp 半導体装置
JP4688751B2 (ja) * 2006-07-25 2011-05-25 三菱電機株式会社 半導体装置
US7875962B2 (en) * 2007-10-15 2011-01-25 Power Integrations, Inc. Package for a power semiconductor device
TW201011869A (en) * 2008-09-10 2010-03-16 Cyntec Co Ltd Chip package structure
US8207455B2 (en) * 2009-07-31 2012-06-26 Power Integrations, Inc. Power semiconductor package with bottom surface protrusions
JP5181310B2 (ja) * 2010-06-24 2013-04-10 三菱電機株式会社 半導体装置
JP5437943B2 (ja) * 2010-07-26 2014-03-12 日立オートモティブシステムズ株式会社 パワー半導体ユニット、パワーモジュールおよびそれらの製造方法
JP5724573B2 (ja) * 2011-04-19 2015-05-27 日亜化学工業株式会社 発光装置
TWI479983B (zh) * 2011-06-23 2015-04-01 Mstar Semiconductor Inc 一體成型的鰭片式散熱裝置
JP5397497B2 (ja) 2012-04-20 2014-01-22 ダイキン工業株式会社 冷凍装置
KR101388815B1 (ko) * 2012-06-29 2014-04-23 삼성전기주식회사 반도체 패키지
DE102013220880B4 (de) * 2013-10-15 2016-08-18 Infineon Technologies Ag Elektronisches Halbleitergehäuse mit einer elektrisch isolierenden, thermischen Schnittstellenstruktur auf einer Diskontinuität einer Verkapselungsstruktur sowie ein Herstellungsverfahren dafür und eine elektronische Anordung dies aufweisend
DE112015005995T5 (de) 2015-01-20 2017-10-26 Mitsubishi Electric Corporation Leistungsmodul
DE102015109073B4 (de) * 2015-06-09 2023-08-10 Infineon Technologies Ag Elektronische Vorrichtungen mit erhöhten Kriechstrecken
JP6362800B2 (ja) * 2016-02-04 2018-07-25 三菱電機株式会社 半導体装置
JP6639320B2 (ja) 2016-04-27 2020-02-05 マレリ株式会社 半導体装置
JP6281595B2 (ja) * 2016-05-10 2018-02-21 ダイキン工業株式会社 圧縮機システム
JP2017204910A (ja) * 2016-05-10 2017-11-16 ダイキン工業株式会社 圧縮機システム
WO2019092842A1 (ja) * 2017-11-10 2019-05-16 新電元工業株式会社 電子モジュール及び電子モジュールの製造方法
JP6556279B1 (ja) * 2018-03-06 2019-08-07 三菱電機株式会社 電力半導体装置、電力半導体装置の製造方法、および回転電機
US11621204B2 (en) * 2021-02-17 2023-04-04 Infineon Technologies Ag Molded semiconductor module having a mold step for increasing creepage distance
WO2024207014A1 (en) * 2023-03-31 2024-10-03 Microcircuit Laboratories, Llc Robotic cover sealer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH072169B2 (ja) * 1985-12-24 1995-01-18 京セラ株式会社 人工下顎骨部材
JPS62204340A (ja) * 1986-03-05 1987-09-09 Agency Of Ind Science & Technol デ−タ処理装置
JPS6431443A (en) * 1987-07-27 1989-02-01 Nec Corp Semiconductor device
US5019942A (en) * 1987-11-30 1991-05-28 Thermalloy Incorporated Insulating apparatus for electronic device assemblies
JPH03108744A (ja) * 1989-09-22 1991-05-08 Toshiba Corp 樹脂封止型半導体装置
US5293301A (en) * 1990-11-30 1994-03-08 Shinko Electric Industries Co., Ltd. Semiconductor device and lead frame used therein
US5444909A (en) * 1993-12-29 1995-08-29 Intel Corporation Method of making a drop-in heat sink

Also Published As

Publication number Publication date
EP0777271A3 (de) 1999-07-21
EP0777271A2 (de) 1997-06-04
US5672910A (en) 1997-09-30
JP3406753B2 (ja) 2003-05-12
JPH09153574A (ja) 1997-06-10
DE69627788T2 (de) 2004-02-26
EP0777271B1 (de) 2003-05-02

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