DE69507177D1 - Halbleiterbauelement mit mindestens einem IGBT und einer Diode - Google Patents

Halbleiterbauelement mit mindestens einem IGBT und einer Diode

Info

Publication number
DE69507177D1
DE69507177D1 DE69507177T DE69507177T DE69507177D1 DE 69507177 D1 DE69507177 D1 DE 69507177D1 DE 69507177 T DE69507177 T DE 69507177T DE 69507177 T DE69507177 T DE 69507177T DE 69507177 D1 DE69507177 D1 DE 69507177D1
Authority
DE
Germany
Prior art keywords
igbt
diode
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69507177T
Other languages
English (en)
Other versions
DE69507177T2 (de
Inventor
Koumei Hanaoka
Naoki Sakurai
Mutsuhiro Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69507177D1 publication Critical patent/DE69507177D1/de
Publication of DE69507177T2 publication Critical patent/DE69507177T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00308—Overvoltage protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Power Conversion In General (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Inverter Devices (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69507177T 1994-02-18 1995-02-15 Halbleiterbauelement mit mindestens einem IGBT und einer Diode Expired - Lifetime DE69507177T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2084194 1994-02-18

Publications (2)

Publication Number Publication Date
DE69507177D1 true DE69507177D1 (de) 1999-02-25
DE69507177T2 DE69507177T2 (de) 1999-09-02

Family

ID=12038304

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69507177T Expired - Lifetime DE69507177T2 (de) 1994-02-18 1995-02-15 Halbleiterbauelement mit mindestens einem IGBT und einer Diode

Country Status (3)

Country Link
US (2) US5701018A (de)
EP (2) EP0670603B1 (de)
DE (1) DE69507177T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0670603B1 (de) * 1994-02-18 1999-01-13 Hitachi, Ltd. Halbleiterbauelement mit mindestens einem IGBT und einer Diode
JP3696352B2 (ja) * 1996-12-17 2005-09-14 三菱電機株式会社 ライフタイム評価用ｔｅｇ
JP3494023B2 (ja) * 1998-07-28 2004-02-03 株式会社日立製作所 半導体装置および半導体装置の駆動方法並びに電力変換装置
SE9802908D0 (sv) * 1998-08-31 1998-08-31 Abb Research Ltd Electric circuit
GB0003302D0 (en) * 2000-02-15 2000-04-05 Koninkl Philips Electronics Nv Semiconductor devices
DE10031781A1 (de) 2000-07-04 2002-01-17 Abb Semiconductors Ag Baden Halbleiterbauelement und Verfahren zu dessen Herstellung
JP4761644B2 (ja) * 2001-04-18 2011-08-31 三菱電機株式会社 半導体装置
JP5033335B2 (ja) * 2006-02-21 2012-09-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いたインバータ装置
US20090283137A1 (en) * 2008-05-15 2009-11-19 Steven Thomas Croft Solar-cell module with in-laminate diodes and external-connection mechanisms mounted to respective edge regions
US9059351B2 (en) 2008-11-04 2015-06-16 Apollo Precision (Fujian) Limited Integrated diode assemblies for photovoltaic modules
US8203200B2 (en) * 2009-11-25 2012-06-19 Miasole Diode leadframe for solar module assembly
US20110146778A1 (en) * 2009-12-22 2011-06-23 Miasole Shielding of interior diode assemblies from compression forces in thin-film photovoltaic modules

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0828506B2 (ja) * 1988-11-07 1996-03-21 三菱電機株式会社 半導体装置およびその製造方法
JPH0680820B2 (ja) * 1989-10-16 1994-10-12 株式会社東芝 過電圧保護機能付半導体装置及びその製造方法
JP2692765B2 (ja) * 1989-12-22 1997-12-17 株式会社日立製作所 ダイオード及びｉｇｂｔとの並列回路とそのモジュール及びそれを用いた電力変換装置
JPH04133355A (ja) * 1990-09-25 1992-05-07 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
EP0670603B1 (de) * 1994-02-18 1999-01-13 Hitachi, Ltd. Halbleiterbauelement mit mindestens einem IGBT und einer Diode

Also Published As

Publication number Publication date
EP0670603B1 (de) 1999-01-13
DE69507177T2 (de) 1999-09-02
US5701018A (en) 1997-12-23
EP0840379A2 (de) 1998-05-06
EP0840379A3 (de) 1998-05-27
EP0670603A1 (de) 1995-09-06
US6144046A (en) 2000-11-07

Similar Documents

Publication Publication Date Title
DE59504577D1 (de) Halbleiterbauelement mit hochsperrendem randabschluss
DE69305667T2 (de) Wärmesenke mit guten wärmezerstreuenden Eigenschaften und Herstellungsverfahren
DE69522182D1 (de) Halbleitergehäuse mit mehreren Chips
DE69318239T2 (de) Halbleiterbauelement mit planarer Grenzfläche
DE59302036D1 (de) Anordnung mit einer Leiterplatte, mindestens einem Leistungsbauelement und einem Kühlkörper
DE69528944T2 (de) Halbleiteranordnung mit hoher Durchbruchspannung und mit einer vergrabenen MOS-Gatestruktur
DE69534584D1 (de) Halbleiter-Bauteil mit Gräben
KR910007146A (ko) T형의 반도체 돌출부를 가지는 mosfet와 그 제조방법
DE69507177D1 (de) Halbleiterbauelement mit mindestens einem IGBT und einer Diode
DE3877533D1 (de) Eine halbleiteranordnung mit einem feldeffekttransistor und einer schutzdiode zwischen source und drain.
DE69429467T2 (de) Halbleiteranordnung mit einer Isolationszone
DE69808094D1 (de) In einer ölfeldeinrichtung einsetzbares befestigungselement und mit einem solchen befestigungselement ausgestattete ölfeldeinrichtung
DE3771648D1 (de) Halbleiterbauelement mit mindestens einem leistungs-mosfet.
DE59309712D1 (de) Thyristor mit Durchbruchbereich
DE69427904D1 (de) Integrierte Halbleiterdiode
DE69428657T2 (de) Halbleiter-Schutzbauelement mit Shockley-Dioden
DE69522510D1 (de) Halbleiterbauelement mit einer Dreieckigen Sperrschichtdiodenstruktur
DE69008654T2 (de) Linearmotor sowie mit mindestens einem Linearmotor versehene Positionierungsvorrichtung.
DE59509972D1 (de) Integrierte schaltungsstruktur mit einem aktiven mikrowellenbauelement und mindestens einem passiven bauelement
DE69327135T2 (de) Halbleiteranordnung mit mehreren Halbleiterchips
DE9413550U1 (de) Halbleiteranordnung mit wenigstens einem Halbleiterbauelement
DE59600370D1 (de) Integrierte Schaltungsanordnung mit mindestens einem IGBT
DE69427865D1 (de) Halbleiteranordnung mit einer Wärmesenke und Herstellungsverfahren der Wärmesenke
DE69530881D1 (de) Halbleiteranordnung mit einem lateralen Bipolartransistor
DE9421217U1 (de) Schließeinrichtung mit mindestens einem zusätzlichen Sicherungsriegel

Legal Events

Date Code Title Description
8364 No opposition during term of opposition