DE69325708D1 - Halbleiter-photodetektor mit verformter uebergitter und mit einer seitenkontaktstruktur - Google Patents

Halbleiter-photodetektor mit verformter uebergitter und mit einer seitenkontaktstruktur

Info

Publication number
DE69325708D1
DE69325708D1 DE69325708T DE69325708T DE69325708D1 DE 69325708 D1 DE69325708 D1 DE 69325708D1 DE 69325708 T DE69325708 T DE 69325708T DE 69325708 T DE69325708 T DE 69325708T DE 69325708 D1 DE69325708 D1 DE 69325708D1
Authority
DE
Germany
Prior art keywords
side contact
contact structure
top grid
semiconductor photodetector
deformed top
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325708T
Other languages
English (en)
Other versions
DE69325708T2 (de
Inventor
Yoshiyuki Hirayama
Kazuaki Nishikata
Michinori Irikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4356786A external-priority patent/JPH06188449A/ja
Priority claimed from JP5105091A external-priority patent/JPH06296037A/ja
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Application granted granted Critical
Publication of DE69325708D1 publication Critical patent/DE69325708D1/de
Publication of DE69325708T2 publication Critical patent/DE69325708T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
DE69325708T 1992-12-21 1993-12-21 Halbleiter-photodetektor mit verformter uebergitter und mit einer seitenkontaktstruktur Expired - Fee Related DE69325708T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4356786A JPH06188449A (ja) 1992-12-21 1992-12-21 Ｍｓｍ型受光素子
JP5105091A JPH06296037A (ja) 1993-04-07 1993-04-07 半導体受光素子
PCT/JP1993/001848 WO1994015367A1 (en) 1992-12-21 1993-12-21 Distorted superlattice semiconductor photodetecting element with side-contact structure

Publications (2)

Publication Number Publication Date
DE69325708D1 true DE69325708D1 (de) 1999-08-26
DE69325708T2 DE69325708T2 (de) 1999-12-30

Family

ID=26445441

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325708T Expired - Fee Related DE69325708T2 (de) 1992-12-21 1993-12-21 Halbleiter-photodetektor mit verformter uebergitter und mit einer seitenkontaktstruktur

Country Status (4)

Country Link
US (1) US5608230A (de)
EP (1) EP0627771B1 (de)
DE (1) DE69325708T2 (de)
WO (1) WO1994015367A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0148597B1 (ko) * 1994-11-23 1998-10-15 정선종 왜곡 성장층을 이용한 금속/반도체 접합 쇼트키 다이오드 광소자
US6222200B1 (en) 1999-04-19 2001-04-24 Nortel Networks Limited Photodetector with spectrally extended responsivity
AU5405400A (en) * 1999-06-14 2001-01-02 Carlos J.R.P. Augusto Stacked wavelength-selective opto-electronic device
US7442953B2 (en) * 1999-06-14 2008-10-28 Quantum Semiconductor Llc Wavelength selective photonics device
JP3589920B2 (ja) * 1999-12-10 2004-11-17 Ｎｅｃ化合物デバイス株式会社 半導体受光素子
US6706542B1 (en) * 2000-01-07 2004-03-16 Triquint Technology Holding Co. Application of InAIAs double-layer to block dopant out-diffusion in III-V device Fabrication
JP3652977B2 (ja) * 2000-06-06 2005-05-25 ユーディナデバイス株式会社 半導体受光装置およびその製造方法
WO2004109235A2 (de) * 2003-06-11 2004-12-16 Daimlerchrysler Ag Optisches sensorelement und sensoranordnung
US20050161695A1 (en) * 2003-09-05 2005-07-28 Sae Magnetics (H.K.) Ltd. Systems and methods having a metal-semiconductor-metal (MSM) photodetector with buried oxide layer
WO2010074964A2 (en) * 2008-12-23 2010-07-01 Intel Corporation Group iii-v mosfet having metal diffusion regions
JP2016535436A (ja) * 2013-10-21 2016-11-10 センサー エレクトロニック テクノロジー インコーポレイテッド 複合半導体層を含むヘテロ構造
FR3045941B1 (fr) 2015-12-16 2018-02-02 Thales Element detecteur de rayonnement et imageur comprenant un ensemble d'elements detecteurs de rayonnement
FR3045942B1 (fr) 2015-12-16 2018-01-12 Thales Element detecteur de rayonnement et imageur comprenant un ensemble d'elements detecteurs de rayonnement
CN108428763B (zh) * 2018-04-18 2024-06-04 厦门大学 一种应力调控紫外多波长msm光电探测器及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60195981A (ja) * 1984-03-19 1985-10-04 Fujitsu Ltd 半導体受光装置
JPS60262473A (ja) * 1984-06-08 1985-12-25 Fujitsu Ltd 光半導体装置
JPH0654785B2 (ja) * 1984-12-25 1994-07-20 住友電気工業株式会社 変調ド−ピングトランジスタ
JP2590817B2 (ja) * 1986-03-18 1997-03-12 日本電気株式会社 ホトデイテクタ
JPS6380520A (ja) * 1986-09-24 1988-04-11 Nec Corp 半導体装置
JPS6398158A (ja) * 1986-10-15 1988-04-28 Hitachi Ltd ホトダイオ−ド
US5238869A (en) * 1988-07-25 1993-08-24 Texas Instruments Incorporated Method of forming an epitaxial layer on a heterointerface
JPH02199877A (ja) * 1989-01-27 1990-08-08 Nec Corp 光受信器及び光電子集積回路
US5132981A (en) * 1989-05-31 1992-07-21 Hitachi, Ltd. Semiconductor optical device
EP0426419B1 (de) * 1989-10-31 1997-09-10 The Furukawa Electric Co., Ltd. Halbleiterlaser-Elemente und Verfahren zu ihrer Herstellung
US5093695A (en) * 1990-05-18 1992-03-03 At&T Bell Laboratories Controllable semiconductor modulator having interleaved contacts
DE69112288T2 (de) * 1990-06-06 1996-02-08 Fujitsu Ltd Hochgeschwindigkeitsoptohalbleitervorrichtung mit mehrfachen Quantentöpfen.
JPH04106984A (ja) * 1990-08-27 1992-04-08 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
WO1994015367A1 (en) 1994-07-07
EP0627771B1 (de) 1999-07-21
EP0627771A1 (de) 1994-12-07
EP0627771A4 (de) 1997-01-22
DE69325708T2 (de) 1999-12-30
US5608230A (en) 1997-03-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee