WO1994015367A1 - Distorted superlattice semiconductor photodetecting element with side-contact structure - Google Patents
Distorted superlattice semiconductor photodetecting element with side-contact structure Download PDFInfo
- Publication number
- WO1994015367A1 WO1994015367A1 PCT/JP1993/001848 JP9301848W WO9415367A1 WO 1994015367 A1 WO1994015367 A1 WO 1994015367A1 JP 9301848 W JP9301848 W JP 9301848W WO 9415367 A1 WO9415367 A1 WO 9415367A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- semiconductor
- strained superlattice
- light
- receiving element
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 7
- 230000004044 response Effects 0.000 abstract description 11
- 238000000151 deposition Methods 0.000 abstract 2
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000969 carrier Substances 0.000 description 6
- 229910018885 Pt—Au Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000003877 atomic layer epitaxy Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
Definitions
- the present invention relates to an improvement in a strained superlattice semiconductor photodetector having a side contact structure.
- This type of semiconductor light receiving element which is abbreviated as the MSM type, has electrodes opposed to each other on the crystal surface, and has been studied a lot because it is suitable for an integrated circuit such as OEC.
- MSM-type semiconductor photodetectors have the advantages of small capacity, simple structure, and small number of manufacturing processes.However, on the other hand, the dark current is reduced and the pulse response falls. It is still a technical challenge to increase the speed by increasing the speed.
- the reason for the slow fall of the pulse response in the MSM semiconductor photodetector is that the holes move slowly due to light absorption, and the holes continue to reach the negative electrode even after the light is turned off. Is pointed out.
- This proposal is based on the in-plane It is based on the fact that the effective mass of holes in the in-plane direction in the strained superlattice layer having compressive strain is reduced, and the mobility of holes is improved as compared with an unstrained element.
- FIG. 4 illustrates an MSM type semiconductor photodetector using such a strained superlattice.
- reference numeral 11 denotes a (100) Fe doped InP substrate
- 12 denotes a non-doped InP buffer layer
- 13 denotes an InGasAs compressive strain layer and InG.
- 16, a Ti / PtZAu electrode a Ti / PtZAu electrode.
- the leakage current of the reverse-biased Schottky junction is low because the Schottky barrier between the electrode and the semiconductor is low. And dark current increases.
- the present invention provides an MSM type semiconductor light receiving element using a strained superlattice, which can ensure high-speed response and reduce dark current.
- a semiconductor layer including a light receiving layer having an in-plane compressive strain type strained superlattice layer is formed on a semiconductor substrate through an epitaxial growth method.
- the semiconductor light receiving element is characterized in that a portion from which a portion of the epitaxial growth layer is removed is formed on a side wall of the semiconductor layer, and an electrode is provided on the removed portion.
- One of them is that a part of the epitaxial growth layer is removed on the side surface of the light receiving layer having the strained superlattice layer in a groove shape, and an electrode is provided in the groove. And / or that the electrode on the side of the light receiving layer includes a Schottky junction, and / or that the Schottky electrode is formed on the side of the light receiving layer having a strained superlattice layer through a multiple quantum barrier structure. That is.
- the light-receiving layer having a strained superlattice layer is composed of an in-plane compressive strain type quantum well layer that absorbs light and an in-plane tensile strain type quantum barrier layer that does not absorb light. That is, the in-plane compressive strain of the quantum well layer and the in-plane tensile strain of the quantum barrier layer are substantially equal to each other and have a strain rate.
- the quantum barrier layer has an in-plane compressive strain of 3% or less, and an energy band gap width of 1.42 eV or less.
- the quantum barrier layer has an in-plane tensile strain of 3% or less and has an energy It is more desirable to use an InGaAs (P) mixed crystal or an A1 (Ga) InAs mixed crystal having a band gap width of 0.75 eV or less.
- a portion where a part of the epitaxial growth layer is removed is formed on the side wall of the semiconductor layer, and an electrode is provided on the removed portion. Therefore, it is not necessary for carriers to move over the barrier layer, so that the so-called pile-up phenomenon does not occur at the opening barrier, so that the carrier moves faster by that much, and the high-speed response of the semiconductor photodetector Property is obtained.
- the semiconductor light receiving device when at least one electrode is of a Schottky type, or when the electrode is of a Schottky type and the Schottky junction has a multiple quantum barrier interposed, an effective effect is obtained.
- the dark current is also reduced because the effective Schottky barrier is increased and the leakage current is reduced.
- the holes are strained only as light holes. Since it moves in the in-plane direction of the superlattice structure, the response of the semiconductor light receiving element is further improved.
- FIG. 1 is a diagram showing a partial cross section of an embodiment of a semiconductor light receiving element according to the present invention
- FIG. 2 is a band diagram along line X--X in FIG. 1
- FIGS. 3 (a) and 3 (b) Is a semiconductor light receiving element according to the present invention
- Fig. 4 shows a comparison of the relationship between the energy of incident light and the energy of the absorption edge in the light receiving layer (well layer, barrier layer) between the semiconductor and the conventional semiconductor light receiving element.
- FIG. 1 is a diagram showing a partial cross section of an embodiment of a semiconductor light receiving element according to the present invention
- FIG. 2 is a band diagram along line X--X in FIG. 1
- FIGS. 3 (a) and 3 (b) Is a semiconductor light receiving element according to the present invention
- Fig. 4 shows a comparison of the relationship between the energy of incident light and the energy of the absorption edge in the light receiving layer (well layer, barrier layer) between the semiconductor and the conventional semiconductor light receiving element.
- 1 is a semiconductor (semi-insulating) substrate made of InP
- 2 is a buffer layer made of InA1As with a thickness of 0.5 m
- 3 is a superlattice light-receiving layer
- 4 is InP.
- the superlattice light-receiving layer 3 described above has a strained superlattice structure having a thickness of 0.5 wm to 1.0; itm.
- the strain superlattice structure in the light receiving layer 3 is, as a specific example, In having compressive strain. 68 G a. . 32 A s (thickness 100 A) and I n 0. 37 A 1 63 A s is configured de (thickness 1 0 OA) and that have a tensile strain, these compressive strain, the tensile strain, total Are designed to negate each other.
- 5 is a multiple quantum barrier layer composed of InAlAs—InGaAs (P)
- 6 is a Schottky electrode composed of Ti-Pt—Au
- 7 is Au—Ge—N.
- Each of the ohmic electrodes made of i is shown.
- the ohmic electrode in the above may be replaced with one in which InA1As is formed on the inner surface of the groove of the light receiving layer 3 and a Schottky electrode is formed thereon.
- FIG. 1 shows a band of the semiconductor light receiving element according to the present invention at X-X rays. The diagram is shown in Figure 2.
- the absorption edge energy including the quantum confinement effect becomes 0.8 eV or less, and the well layer can absorb light having a wavelength of 1.55 wm.
- an InAlAs barrier layer with a tensile strain of 1% does not normally absorb light having a wavelength of 1.3 to 1.65 inm used for optical communication.
- a layer having a sufficient thickness as the light receiving layer is necessary because the stress due to the compressive strain and the tensile strain cancel each other out. Can be formed.
- the incident light is absorbed only by the compressive strain type well layer, carriers move only in the in-plane direction in the well layer.
- 3 (a) and 3 (b) show the energy E gL of the incident light and the absorption of the well layer and the barrier layer of the light receiving layer 3 for the semiconductor light receiving element according to the present invention and the conventional semiconductor light receiving element.
- the end energies E gw and E gB are shown respectively.
- the semiconductor light-receiving element of the present invention that satisfy the E gw ⁇ E gL ⁇ E gB becomes relevant, high-speed response, in terms of dark current reduction, E gw ⁇ It is superior to the conventional semiconductor light receiving element having the relationship of E gB ⁇ E gL .
- an InA1As buffer layer 2 On the plate 1, an InA1As buffer layer 2, a light receiving layer 3, and a cap layer 4 are sequentially laminated.
- At least a comb-shaped groove 8a, 8 having a depth crossing the light-receiving layer 3 is formed by using a photolithography technique.
- a negative electrode and a positive electrode are provided at predetermined positions of the element.
- the multiple quantum barrier layer is formed on the inner surface of the trench 8a via the ALE (Atomic layer epitaxy) method or the selective growth method disclosed in the following document 1.
- 5 is formed in advance, and a Ti—Pt—Au Schottky electrode 6 is selectively deposited on the multiple quantum barrier layer 5 by a subsequent photolithography technique.
- the Au—Ge—Ni ohmic electrode 7 is deposited on the inner surface of the groove 8 b through a known or well-known means.
- InA1As is formed on the inner surface of the groove 8b by ALE or other means, and the Schottky electrode is deposited thereon. Is done.
- shot metal in this case examples include Ti—Pt—Au and Mo—Ti—Pt—Au.
- the semiconductor light receiving element according to the present invention is not limited to the contents described above, but includes embodiments and design changes based on the following.
- GaAs gallium arsphide
- a material having a strained superlattice structure for example, a quaternary material such as InGaAlAs or InGaAsP may be used. Further, a superlattice layer, InP, and the like can be used for the buffer layer, and the multiquantum barrier layer also uses InA1As—InGaAs (P) disclosed in Reference 2 below. Can be used.
- the band gap of the quantum well layer constituting the strained superlattice of the light-receiving layer is a force whose upper limit is 1.42 eV.
- a more desirable value of this bandgap is usually 0.8 eV or less.
- the band gap of the quantum barrier layer is required to be a value that does not absorb the wavelength to be received, but a more desirable value of this band gap is usually 1. O eV or more.
- the semiconductor light receiving element according to the present invention has the following effects, and is useful and useful in this kind of technical field.
- a semiconductor layer including a light-receiving layer having an in-plane compressive strain-type strained superlattice layer is formed on a semiconductor substrate by an epitaxial growth method, a semiconductor layer is formed on a sidewall of the semiconductor layer. Since the portion where the part of the epitaxial growth layer is removed is formed and the electrode is provided in the removed portion, the response characteristics of the device are improved.
- a portion of the epitaxial growth layer from which a part has been removed is formed in a groove shape, and an electrode is provided in the groove, and or Electrode on the side of the layer If a Schottky electrode is formed via a multi-quantum barrier structure on the side of the light-receiving layer having a z- or strained superlattice layer, the effective Schottky barrier is It becomes higher and the leakage current is reduced, so the dark current is reduced.
- the light-receiving layer having a strained superlattice layer is composed of an in-plane compressive strain type quantum well layer that absorbs light and an in-plane tensile strain type quantum barrier layer that does not absorb light. Move in the in-plane direction of the strained superlattice structure only as light holes, so that the high-speed response of the device is further improved.
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94903032A EP0627771B1 (en) | 1992-12-21 | 1993-12-21 | Distorted superlattice semiconductor photodetecting element with side-contact structure |
DE69325708T DE69325708T2 (de) | 1992-12-21 | 1993-12-21 | Halbleiter-photodetektor mit verformter uebergitter und mit einer seitenkontaktstruktur |
US08/290,918 US5608230A (en) | 1992-12-21 | 1993-12-21 | Strained superlattice semiconductor photodetector having a side contact structure |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4/356786 | 1992-12-21 | ||
JP4356786A JPH06188449A (ja) | 1992-12-21 | 1992-12-21 | Msm型受光素子 |
JP5/105091 | 1993-04-07 | ||
JP5105091A JPH06296037A (ja) | 1993-04-07 | 1993-04-07 | 半導体受光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1994015367A1 true WO1994015367A1 (en) | 1994-07-07 |
Family
ID=26445441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1993/001848 WO1994015367A1 (en) | 1992-12-21 | 1993-12-21 | Distorted superlattice semiconductor photodetecting element with side-contact structure |
Country Status (4)
Country | Link |
---|---|
US (1) | US5608230A (ja) |
EP (1) | EP0627771B1 (ja) |
DE (1) | DE69325708T2 (ja) |
WO (1) | WO1994015367A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5488231A (en) * | 1994-11-23 | 1996-01-30 | Electronics And Telecommunications Research Institute | Metal/semiconductor junction Schottky diode optical device using a distortion grown layer |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6222200B1 (en) | 1999-04-19 | 2001-04-24 | Nortel Networks Limited | Photodetector with spectrally extended responsivity |
US7442953B2 (en) * | 1999-06-14 | 2008-10-28 | Quantum Semiconductor Llc | Wavelength selective photonics device |
WO2000077861A1 (en) * | 1999-06-14 | 2000-12-21 | Augusto Carlos J R P | Stacked wavelength-selective opto-electronic device |
JP3589920B2 (ja) | 1999-12-10 | 2004-11-17 | Nec化合物デバイス株式会社 | 半導体受光素子 |
US6706542B1 (en) * | 2000-01-07 | 2004-03-16 | Triquint Technology Holding Co. | Application of InAIAs double-layer to block dopant out-diffusion in III-V device Fabrication |
JP3652977B2 (ja) | 2000-06-06 | 2005-05-25 | ユーディナデバイス株式会社 | 半導体受光装置およびその製造方法 |
WO2004109235A2 (de) * | 2003-06-11 | 2004-12-16 | Daimlerchrysler Ag | Optisches sensorelement und sensoranordnung |
US20050161695A1 (en) * | 2003-09-05 | 2005-07-28 | Sae Magnetics (H.K.) Ltd. | Systems and methods having a metal-semiconductor-metal (MSM) photodetector with buried oxide layer |
WO2010074964A2 (en) * | 2008-12-23 | 2010-07-01 | Intel Corporation | Group iii-v mosfet having metal diffusion regions |
US9818826B2 (en) * | 2013-10-21 | 2017-11-14 | Sensor Electronic Technology, Inc. | Heterostructure including a composite semiconductor layer |
FR3045941B1 (fr) | 2015-12-16 | 2018-02-02 | Thales | Element detecteur de rayonnement et imageur comprenant un ensemble d'elements detecteurs de rayonnement |
FR3045942B1 (fr) | 2015-12-16 | 2018-01-12 | Thales | Element detecteur de rayonnement et imageur comprenant un ensemble d'elements detecteurs de rayonnement |
CN108428763A (zh) * | 2018-04-18 | 2018-08-21 | 厦门大学 | 一种应力调控紫外多波长msm光电探测器及其制备方法 |
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JPS60195981A (ja) * | 1984-03-19 | 1985-10-04 | Fujitsu Ltd | 半導体受光装置 |
JPS60262473A (ja) * | 1984-06-08 | 1985-12-25 | Fujitsu Ltd | 光半導体装置 |
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JPH02199877A (ja) * | 1989-01-27 | 1990-08-08 | Nec Corp | 光受信器及び光電子集積回路 |
JPH04106984A (ja) * | 1990-08-27 | 1992-04-08 | Hitachi Ltd | 半導体装置 |
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JPH0654785B2 (ja) * | 1984-12-25 | 1994-07-20 | 住友電気工業株式会社 | 変調ド−ピングトランジスタ |
JPS6380520A (ja) * | 1986-09-24 | 1988-04-11 | Nec Corp | 半導体装置 |
US5238869A (en) * | 1988-07-25 | 1993-08-24 | Texas Instruments Incorporated | Method of forming an epitaxial layer on a heterointerface |
US5132981A (en) * | 1989-05-31 | 1992-07-21 | Hitachi, Ltd. | Semiconductor optical device |
CA2028899C (en) * | 1989-10-31 | 1997-03-04 | Teturo Ijichi | Semiconductor laser elements and method for the production thereof |
US5093695A (en) * | 1990-05-18 | 1992-03-03 | At&T Bell Laboratories | Controllable semiconductor modulator having interleaved contacts |
US5160993A (en) * | 1990-06-06 | 1992-11-03 | Fujitsu Limited | High speed optosemiconductor device having multiple quantum wells |
-
1993
- 1993-12-21 WO PCT/JP1993/001848 patent/WO1994015367A1/ja active IP Right Grant
- 1993-12-21 EP EP94903032A patent/EP0627771B1/en not_active Expired - Lifetime
- 1993-12-21 US US08/290,918 patent/US5608230A/en not_active Expired - Lifetime
- 1993-12-21 DE DE69325708T patent/DE69325708T2/de not_active Expired - Fee Related
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JPS60195981A (ja) * | 1984-03-19 | 1985-10-04 | Fujitsu Ltd | 半導体受光装置 |
JPS60262473A (ja) * | 1984-06-08 | 1985-12-25 | Fujitsu Ltd | 光半導体装置 |
JPS62216378A (ja) * | 1986-03-18 | 1987-09-22 | Nec Corp | ホトデイテクタ |
JPS6398158A (ja) * | 1986-10-15 | 1988-04-28 | Hitachi Ltd | ホトダイオ−ド |
JPH02199877A (ja) * | 1989-01-27 | 1990-08-08 | Nec Corp | 光受信器及び光電子集積回路 |
JPH04106984A (ja) * | 1990-08-27 | 1992-04-08 | Hitachi Ltd | 半導体装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5488231A (en) * | 1994-11-23 | 1996-01-30 | Electronics And Telecommunications Research Institute | Metal/semiconductor junction Schottky diode optical device using a distortion grown layer |
Also Published As
Publication number | Publication date |
---|---|
EP0627771A4 (en) | 1997-01-22 |
EP0627771A1 (en) | 1994-12-07 |
DE69325708D1 (de) | 1999-08-26 |
US5608230A (en) | 1997-03-04 |
EP0627771B1 (en) | 1999-07-21 |
DE69325708T2 (de) | 1999-12-30 |
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