KR930018717A - 반도체 집적 회로 장치 - Google Patents

반도체 집적 회로 장치 Download PDF

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Publication number
KR930018717A
KR930018717A KR1019930002219A KR930002219A KR930018717A KR 930018717 A KR930018717 A KR 930018717A KR 1019930002219 A KR1019930002219 A KR 1019930002219A KR 930002219 A KR930002219 A KR 930002219A KR 930018717 A KR930018717 A KR 930018717A
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KR
South Korea
Prior art keywords
power supply
wiring
semiconductor integrated
external power
integrated circuit
Prior art date
Application number
KR1019930002219A
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English (en)
Other versions
KR950010872B1 (ko
Inventor
히로시 후루따
Original Assignee
세끼모또 다다히로
니뽄 덴끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 세끼모또 다다히로, 니뽄 덴끼 가부시끼가이샤 filed Critical 세끼모또 다다히로
Publication of KR930018717A publication Critical patent/KR930018717A/ko
Application granted granted Critical
Publication of KR950010872B1 publication Critical patent/KR950010872B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

외부 전원 전압을 이것보다 낮은 전압으로 변환하여 내부 회로의 공급하는 전원 전압 변환 회로를 내장하는 반도체 집적 회로 장치의 정전내압을 개선하는 수단이 개시된다.
외부 전원핀에 접속되는 외부 전원 배선 및 또는 입력핀과 전원 전압 변환 회로의 출력선인 내부 전원 배선 사이에 크램프 소자를 삽입한다.
과대전압의 인가에 의해 크램프 소자가 동작하므로서 내부 전원 배선과 기판사이의 용량에 전하가 분배되는 결과, 전원 전압 변환 회로를 내장하지 않은 반도체 집적 회로 장치와 같은 정도의 정전내압이 얻어진다.

Description

반도체 집적 회로 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예를 개략적으로 도시하는 결선도.
제6도는 본 발명의 제2실시예를 개략적으로 도시하는 결선도.

Claims (3)

  1. 외부 전원 배선과 접지 배선사이에 삽입되어 상기 외부 전원 배선에서 공급되는 외부 전원 전압 미만의 소정의 내부 전원 전압을 발생하는 전원 전압 변환 회로와, 상기 전원 전압 변환 회로의 출력단에 접속된 내부 전원 배선과 상기 접지 배선사이에 삽입된 내부 회로와, 입력 패드와 상기 접지 배선사이에 삽입된 제1보호 회로와, 상기 외부 전원 배선 및 또는 상기 입력 패드와 상기 내부 전원 배선사이에 삽입된 제2보호회로를 갖는 반도체 집적 회로 장치.
  2. 제1항에 있어서, 상기 제2보호 회로가 상기 외부 전원 배선 및 또는 입력 패드와 상기 내부 전원 배선사이에 삽입된 크램프 소자를 포함하는 반도체 집적 회로 장치.
  3. 제2항에 있어서, 크램프 소자가 필드 MOSFET인 반도체 집적 회로 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930002219A 1992-02-21 1993-02-18 반도체 집적 회로 장치 KR950010872B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP92-72524 1992-02-21
JP7252492 1992-02-21

Publications (2)

Publication Number Publication Date
KR930018717A true KR930018717A (ko) 1993-09-22
KR950010872B1 KR950010872B1 (ko) 1995-09-25

Family

ID=13491810

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930002219A KR950010872B1 (ko) 1992-02-21 1993-02-18 반도체 집적 회로 장치

Country Status (5)

Country Link
US (1) US5416661A (ko)
EP (1) EP0556832B1 (ko)
JP (1) JP2910474B2 (ko)
KR (1) KR950010872B1 (ko)
DE (1) DE69329352T2 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6118302A (en) * 1996-05-28 2000-09-12 Altera Corporation Interface for low-voltage semiconductor devices
US6025737A (en) * 1996-11-27 2000-02-15 Altera Corporation Circuitry for a low internal voltage integrated circuit
KR100251512B1 (ko) 1997-07-12 2000-04-15 구본준 횡전계방식 액정표시장치
US6255850B1 (en) 1997-10-28 2001-07-03 Altera Corporation Integrated circuit with both clamp protection and high impedance protection from input overshoot
TW440986B (en) * 1998-06-09 2001-06-16 Winbond Electronics Corp Electrostatic discharge event detector
US6157530A (en) 1999-01-04 2000-12-05 International Business Machines Corporation Method and apparatus for providing ESD protection
WO2000067323A1 (en) * 1999-04-28 2000-11-09 Hitachi, Ltd. Integrated circuit with protection against electrostatic damage
JP3495031B2 (ja) * 2002-05-28 2004-02-09 沖電気工業株式会社 半導体装置の静電破壊防止保護回路
FR2872629B1 (fr) * 2004-06-30 2007-07-13 St Microelectronics Sa Circuit integre ayant une borne d'entree/sortie configurable dans une gamme de tension determinee
JP2006237101A (ja) * 2005-02-23 2006-09-07 Nec Electronics Corp 半導体集積回路装置
TWI370515B (en) * 2006-09-29 2012-08-11 Megica Corp Circuit component
CN110346994B (zh) * 2019-07-23 2022-07-08 昆山国显光电有限公司 阵列基板和显示面板

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253090A (ja) * 1984-05-30 1985-12-13 Hitachi Ltd 半導体装置
FR2613131B1 (fr) * 1987-03-27 1989-07-28 Thomson Csf Circuit integre protege contre des surtensions
JPS6455857A (en) * 1987-08-26 1989-03-02 Nec Corp Semiconductor integrated device
US5063304A (en) * 1990-04-27 1991-11-05 Texas Instruments Incorporated Integrated circuit with improved on-chip power supply control

Also Published As

Publication number Publication date
EP0556832A1 (en) 1993-08-25
JPH05299585A (ja) 1993-11-12
EP0556832B1 (en) 2000-09-06
KR950010872B1 (ko) 1995-09-25
JP2910474B2 (ja) 1999-06-23
US5416661A (en) 1995-05-16
DE69329352T2 (de) 2001-04-12
DE69329352D1 (de) 2000-10-12

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