KR920003654A - 반도체 집적회로장치 - Google Patents

반도체 집적회로장치 Download PDF

Info

Publication number
KR920003654A
KR920003654A KR1019910011678A KR910011678A KR920003654A KR 920003654 A KR920003654 A KR 920003654A KR 1019910011678 A KR1019910011678 A KR 1019910011678A KR 910011678 A KR910011678 A KR 910011678A KR 920003654 A KR920003654 A KR 920003654A
Authority
KR
South Korea
Prior art keywords
terminal
semiconductor element
field effect
effect semiconductor
integrated circuit
Prior art date
Application number
KR1019910011678A
Other languages
English (en)
Other versions
KR950001308B1 (ko
Inventor
아끼라 야마자키
야스끼 구마노
야스히로 고니시
가쯔끼 도오자까
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시기 모리야, 미쓰비시 뎅끼 가부시기가이샤 filed Critical 시기 모리야
Publication of KR920003654A publication Critical patent/KR920003654A/ko
Application granted granted Critical
Publication of KR950001308B1 publication Critical patent/KR950001308B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/26—Modifications for temporary blocking after receipt of control pulses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

내용 없음

Description

반도체 집적회로장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예의 파워온리세트펄스 발생회로의 구성을 표시하는 회로도,
제2도는 제1도의 파워온티세트펄스발생회로를 보다 상세하게 표시하는 회로도,
제3도는 제1도 및 제2도의 파워온리세트발생회로의 동작을 설명하기 위한 파형도.

Claims (1)

  1. 전원에 결합되는 회로수단에 접속되고, 또한 상기 전원이 끊어졌을때에 상기 회로수단에 잔류하는 전하를 제거하는 반도체집적회로장치이고, 기준전위원과 상기 기준전위원에 접속되는 제어단자와 상기 회로수단에 접속되는 제1의 도통 단자와 제2의 도통단자를 가지는 제1의 전계효과 반도체소자와, 상기 제1의 전계효과반도체소자의 상기 제2의 도통단자에 접속되는 제1의 도통단자와 상기 기준전위원에 접속되는 제2의 도통단자와 제어단자를 가지는 제2의 전계효과 반도체소자와, 상기 전원과 상기 제2의 전계효과 반도체소자의 상기 제어단자와의 사이에 접속되는 용량소자를 구비하고, 상기 제2의 전계효과 반도체소자의 상기 제1의 도통단자 및 상기 제어단자는 서로 접속되는 반도체집적회로장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910011678A 1990-07-13 1991-07-10 반도체 집적회로장치 KR950001308B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2186503A JPH0474015A (ja) 1990-07-13 1990-07-13 半導体集積回路装置
JP2-186503 1990-07-13

Publications (2)

Publication Number Publication Date
KR920003654A true KR920003654A (ko) 1992-02-29
KR950001308B1 KR950001308B1 (ko) 1995-02-15

Family

ID=16189636

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910011678A KR950001308B1 (ko) 1990-07-13 1991-07-10 반도체 집적회로장치

Country Status (4)

Country Link
US (1) US5151614A (ko)
JP (1) JPH0474015A (ko)
KR (1) KR950001308B1 (ko)
DE (1) DE4122978C2 (ko)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2527835B2 (ja) * 1990-07-31 1996-08-28 三菱電機株式会社 半導体装置
JP2816508B2 (ja) * 1991-12-16 1998-10-27 三菱電機株式会社 電源投入検出回路
US5323066A (en) * 1992-06-01 1994-06-21 Motorola, Inc. Method and apparatus for performing power on reset initialization in a data processing system
FR2699755B1 (fr) * 1992-12-22 1995-03-10 Sgs Thomson Microelectronics Circuit de démarrage et de sécurité contre les coupures d'alimentation, pour circuit intégré.
US5463336A (en) * 1994-01-27 1995-10-31 Rockwell International Corporation Supply sensing power-on reset circuit
EP0665648A1 (en) * 1994-01-31 1995-08-02 STMicroelectronics S.r.l. Circuit for recovering initial condictions when starting-up an integrated circuit device
US5570050A (en) * 1994-03-08 1996-10-29 Intel Corporation Zero standby current power-up reset circuit
US5498989A (en) * 1994-04-19 1996-03-12 Xilinx, Inc. Integrated circuit one shot with extended length output pulse
DE69430525T2 (de) * 1994-05-31 2002-11-28 St Microelectronics Srl Niedrige Verlustleistungsinitialisierungsschaltung, insbesondere für Speicherregister
US5477176A (en) * 1994-06-02 1995-12-19 Motorola Inc. Power-on reset circuit for preventing multiple word line selections during power-up of an integrated circuit memory
EP0700159A1 (en) * 1994-08-31 1996-03-06 STMicroelectronics S.r.l. Threshold detection circuit
US5821787A (en) * 1994-10-05 1998-10-13 Altera Corporation Power-on reset circuit with well-defined reassertion voltage
US5612642A (en) * 1995-04-28 1997-03-18 Altera Corporation Power-on reset circuit with hysteresis
US5864251A (en) * 1994-10-28 1999-01-26 Cypress Semiconductor Corporation Method and apparatus for self-resetting logic circuitry
JP3409938B2 (ja) * 1995-03-02 2003-05-26 株式会社東芝 パワーオンリセット回路
US5742192A (en) * 1995-06-15 1998-04-21 Intel Corporation Circuit for generating a pulse signal to drive a pulse latch
US5933032A (en) * 1995-12-29 1999-08-03 Cypress Semiconductor Corp. Apparatus and method for generating a pulse signal
EP0798728B1 (en) * 1996-03-29 2003-06-18 STMicroelectronics S.r.l. Power-on reset signal generating circuit
US5731734A (en) * 1996-10-07 1998-03-24 Atmel Corporation Zero power fuse circuit
DE19708618C2 (de) * 1997-03-03 2002-01-24 Infineon Technologies Ag Schaltungsanordnung zur Generierung eines Rücksetzsignals
JPH1186525A (ja) * 1997-09-09 1999-03-30 Mitsubishi Electric Corp パワーオンリセット回路
US6115836A (en) * 1997-09-17 2000-09-05 Cypress Semiconductor Corporation Scan path circuitry for programming a variable clock pulse width
US5936977A (en) 1997-09-17 1999-08-10 Cypress Semiconductor Corp. Scan path circuitry including a programmable delay circuit
US5953285A (en) * 1997-09-17 1999-09-14 Cypress Semiconductor Corp. Scan path circuitry including an output register having a flow through mode
US5889728A (en) * 1998-02-10 1999-03-30 Cypress Semiconductor Corporation Write control method for memory devices
US6081475A (en) * 1998-02-10 2000-06-27 Cypress Semiconductor Corporation Write control apparatus for memory devices
KR100301252B1 (ko) * 1999-06-23 2001-11-01 박종섭 파워 온 리셋 회로
US6222393B1 (en) 1999-07-20 2001-04-24 Cypress Semiconductor Corporation Apparatus and method for generating a pulse signal
DE10134557C2 (de) * 2001-07-16 2003-07-31 Infineon Technologies Ag Schaltungsanordnung und Verfahren zum Entladen mindestens eines Schaltungsknotens
JP3979921B2 (ja) * 2002-11-06 2007-09-19 沖電気工業株式会社 高電圧検出回路
US7120805B2 (en) * 2003-04-11 2006-10-10 Dell Products L.P. Draining residual charge from a voltage plane
EP1492234A3 (en) * 2003-06-26 2006-03-15 STMicroelectronics Pvt. Ltd Power on reset circuit
FR2863420B1 (fr) * 2003-12-05 2006-04-07 St Microelectronics Sa Dispositif de neutralisation a la mise sous tension
US7221199B2 (en) * 2003-12-24 2007-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit and method for generating level-triggered power up reset signal
US7645105B2 (en) 2006-06-27 2010-01-12 Gm Global Technology Operations, Inc. Projection welded fastener with integral sealer
JP2009152735A (ja) * 2007-12-19 2009-07-09 Seiko Instruments Inc パワーオンクリア回路
KR101013444B1 (ko) * 2008-03-14 2011-02-14 주식회사 하이닉스반도체 듀티 사이클 보정 장치 및 이를 포함하는 반도체 집적 회로
US8250385B2 (en) * 2009-01-30 2012-08-21 Hewlett-Packard Development Company, L.P. Method and system of dissipating power from a power supply
JP2010232848A (ja) * 2009-03-26 2010-10-14 Oki Semiconductor Co Ltd 半導体メモリの内部電源のスタートアップ回路
CN106571796B (zh) 2015-10-09 2019-07-02 中芯国际集成电路制造(上海)有限公司 上电复位电路和方法
CN107342757B (zh) * 2017-07-12 2020-12-04 上海华力微电子有限公司 一种基于改进的带隙基准结构的上电复位电路
KR102573270B1 (ko) 2018-10-08 2023-08-31 삼성전자주식회사 반도체 메모리 장치 및 이의 구동 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122526A (en) * 1980-03-03 1981-09-26 Fujitsu Ltd Semiconductor integrated circuit
US4520418A (en) * 1983-04-25 1985-05-28 Susi Roger E Reset circuit
DE3332701A1 (de) * 1983-09-10 1985-03-28 kabelmetal electro GmbH, 3000 Hannover Schaltungsanordnung fuer ein elektrisches geraet mit mikroprozessor
JP2741022B2 (ja) * 1987-04-01 1998-04-15 三菱電機株式会社 パワーオンリセツトパルス発生回路
JP2578465B2 (ja) * 1988-03-16 1997-02-05 富士通株式会社 パルス信号発生回路
US5030845A (en) * 1989-10-02 1991-07-09 Texas Instruments Incorporated Power-up pulse generator circuit
US5039875A (en) * 1989-11-28 1991-08-13 Samsung Semiconductor CMOS power-on reset circuit

Also Published As

Publication number Publication date
DE4122978C2 (de) 1993-10-07
US5151614A (en) 1992-09-29
JPH0474015A (ja) 1992-03-09
DE4122978A1 (de) 1992-02-06
KR950001308B1 (ko) 1995-02-15

Similar Documents

Publication Publication Date Title
KR920003654A (ko) 반도체 집적회로장치
KR880012008A (ko) 전원절환회로
KR890017743A (ko) 개폐기의 동작표시회로
KR840008099A (ko) 출력회로
KR910002116A (ko) 반도체 장치를 위한 전압 발생회로
ATE97770T1 (de) Einschaltruecksetzschaltungsanordnungen.
KR920003612A (ko) 전자기기
KR920003646A (ko) 반도체 제어장치
KR880011920A (ko) 입력보호 회로를 갖춘 반도체집적회로
KR870700179A (ko) 축적된 유도성 에너지 소멸 방법 및 그 회로와 동력 자급 시스템
KR930018717A (ko) 반도체 집적 회로 장치
KR850700091A (ko) 고효율 igfet연산 증폭기
DE3869558D1 (de) Netzteil fuer ein elektronisches geraet mit kondensatorpufferung.
KR910010705A (ko) 반도체집적회로
KR910013685A (ko) 90°위상 스프리터
KR920008758A (ko) 파워-온 리세트회로
KR920003496A (ko) 반도체장치
KR900012425A (ko) 게이트 발전기
KR880001092A (ko) 전원 회로
KR880010551A (ko) 전원회로장치
KR920009033A (ko) 제어 전압이 증가함에 따라 출력이 감소하는 구분(區分)적 전류원
SE8404658L (sv) Elektronisk stromstellaranordning
KR880008528A (ko) 일체로 집적할 수 있는 극단전류 펄스 발생회로
SE8703913D0 (sv) Anordning for elektrisk avkoppling av integrerade kretsar
KR910013276A (ko) 반도체 집적 회로 장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070208

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee