FR2863420B1 - Dispositif de neutralisation a la mise sous tension - Google Patents

Dispositif de neutralisation a la mise sous tension

Info

Publication number
FR2863420B1
FR2863420B1 FR0314321A FR0314321A FR2863420B1 FR 2863420 B1 FR2863420 B1 FR 2863420B1 FR 0314321 A FR0314321 A FR 0314321A FR 0314321 A FR0314321 A FR 0314321A FR 2863420 B1 FR2863420 B1 FR 2863420B1
Authority
FR
France
Prior art keywords
power
neutralization device
neutralization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0314321A
Other languages
English (en)
Other versions
FR2863420A1 (fr
Inventor
Pierre Rizzo
Christophe Moreaux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0314321A priority Critical patent/FR2863420B1/fr
Priority to US11/001,779 priority patent/US20050140406A1/en
Publication of FR2863420A1 publication Critical patent/FR2863420A1/fr
Application granted granted Critical
Publication of FR2863420B1 publication Critical patent/FR2863420B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
FR0314321A 2003-12-05 2003-12-05 Dispositif de neutralisation a la mise sous tension Expired - Fee Related FR2863420B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0314321A FR2863420B1 (fr) 2003-12-05 2003-12-05 Dispositif de neutralisation a la mise sous tension
US11/001,779 US20050140406A1 (en) 2003-12-05 2004-11-30 Power-on reset device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0314321A FR2863420B1 (fr) 2003-12-05 2003-12-05 Dispositif de neutralisation a la mise sous tension

Publications (2)

Publication Number Publication Date
FR2863420A1 FR2863420A1 (fr) 2005-06-10
FR2863420B1 true FR2863420B1 (fr) 2006-04-07

Family

ID=34586346

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0314321A Expired - Fee Related FR2863420B1 (fr) 2003-12-05 2003-12-05 Dispositif de neutralisation a la mise sous tension

Country Status (2)

Country Link
US (1) US20050140406A1 (fr)
FR (1) FR2863420B1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078944B1 (en) * 2003-07-16 2006-07-18 Cypress Semiconductor Corporation Power on reset circuit
US7126391B1 (en) 2003-07-16 2006-10-24 Cypress Semiconductor Corporation Power on reset circuits
US7236023B2 (en) * 2005-04-14 2007-06-26 Sandisk 3D Llc Apparatus and methods for adaptive trip point detection
WO2006114132A1 (fr) * 2005-04-27 2006-11-02 Semtech Neuchâtel SA Circuit et procede de commande d'affichage a segment a cristaux liquides
US7830200B2 (en) * 2006-01-17 2010-11-09 Cypress Semiconductor Corporation High voltage tolerant bias circuit with low voltage transistors
US7755419B2 (en) 2006-01-17 2010-07-13 Cypress Semiconductor Corporation Low power beta multiplier start-up circuit and method
US7265595B1 (en) 2006-03-03 2007-09-04 Cypress Semiconductor Corporation Stochastic reset circuit
US7504870B2 (en) * 2006-04-07 2009-03-17 Stmicroelectronics, Inc. Power-on reset circuit
JP2008219486A (ja) * 2007-03-05 2008-09-18 Freescale Semiconductor Inc パワーオン検知回路
US8446187B1 (en) * 2007-11-16 2013-05-21 National Semiconductor Corporation Apparatus and method for power-on reset circuit with current comparison
DE102008017038B4 (de) 2008-04-03 2010-02-18 Texas Instruments Deutschland Gmbh Hochpräzisionsschaltung zum Rücksetzen beim Einschalten mit einstellbarem Auslösepegel
KR101782137B1 (ko) * 2010-11-08 2017-09-27 삼성전자주식회사 파워 온 리셋 회로
US8638161B2 (en) * 2011-07-20 2014-01-28 Nxp B.V. Power control device and method therefor
CN102710241B (zh) * 2012-05-08 2015-06-03 卓捷创芯科技（深圳）有限公司 一种无源射频识别上电复位电路及无源射频识别标签
US10312902B2 (en) * 2016-10-28 2019-06-04 Analog Devices Global Low-area, low-power, power-on reset circuit
CN117749150B (zh) * 2024-02-19 2024-04-19 北京中天星控科技开发有限公司成都分公司 一种快慢上电复位电路

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4608530A (en) * 1984-11-09 1986-08-26 Harris Corporation Programmable current mirror
USH497H (en) * 1987-01-14 1988-07-05 The United States Of America As Represented By The Secretary Of The Air Force Ratioed power on reset circuit
JPH0474015A (ja) * 1990-07-13 1992-03-09 Mitsubishi Electric Corp 半導体集積回路装置
EP0665648A1 (fr) * 1994-01-31 1995-08-02 STMicroelectronics S.r.l. Circuit de remise sous tension pour circuit intégré
US5612642A (en) * 1995-04-28 1997-03-18 Altera Corporation Power-on reset circuit with hysteresis
KR0153603B1 (ko) * 1995-05-16 1998-12-15 김광호 반도체 장치의 파워-업 리세트신호 발생회로
KR100304691B1 (ko) * 1998-05-29 2001-09-29 윤종용 트라이스테이트 보상회로를구비하는 출력신호 발생회로
EP1166133B1 (fr) * 2000-01-19 2005-12-14 Koninklijke Philips Electronics N.V. Circuit de detection de niveau de tension
JP4462743B2 (ja) * 2000-03-29 2010-05-12 株式会社ルネサステクノロジ パワーオンリセット回路
US6515523B1 (en) * 2001-05-23 2003-02-04 National Semiconductor Corporation Method and apparatus for generating a power-on reset with an adjustable falling edge for power management
KR100476703B1 (ko) * 2002-07-19 2005-03-16 주식회사 하이닉스반도체 파워 업 회로
KR100452333B1 (ko) * 2002-10-18 2004-10-12 삼성전자주식회사 파워 업 신호 발생기

Also Published As

Publication number Publication date
US20050140406A1 (en) 2005-06-30
FR2863420A1 (fr) 2005-06-10

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20081020