DE69110563D1 - Flüssigkristall-Anzeigevorrichtung. - Google Patents

Flüssigkristall-Anzeigevorrichtung.

Info

Publication number
DE69110563D1
DE69110563D1 DE69110563T DE69110563T DE69110563D1 DE 69110563 D1 DE69110563 D1 DE 69110563D1 DE 69110563 T DE69110563 T DE 69110563T DE 69110563 T DE69110563 T DE 69110563T DE 69110563 D1 DE69110563 D1 DE 69110563D1
Authority
DE
Germany
Prior art keywords
liquid crystal
display device
crystal display
liquid
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69110563T
Other languages
English (en)
Other versions
DE69110563T2 (de
Inventor
Mitsushi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69110563D1 publication Critical patent/DE69110563D1/de
Publication of DE69110563T2 publication Critical patent/DE69110563T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69110563T 1990-07-12 1991-07-12 Flüssigkristall-Anzeigevorrichtung. Expired - Fee Related DE69110563T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18573690 1990-07-12
JP12771691A JP3226223B2 (ja) 1990-07-12 1991-05-30 薄膜トランジスタアレイ装置および液晶表示装置

Publications (2)

Publication Number Publication Date
DE69110563D1 true DE69110563D1 (de) 1995-07-27
DE69110563T2 DE69110563T2 (de) 1996-02-29

Family

ID=26463601

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69110563T Expired - Fee Related DE69110563T2 (de) 1990-07-12 1991-07-12 Flüssigkristall-Anzeigevorrichtung.

Country Status (5)

Country Link
US (1) US5187602A (de)
EP (1) EP0466495B1 (de)
JP (1) JP3226223B2 (de)
KR (1) KR950006028B1 (de)
DE (1) DE69110563T2 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2620240B2 (ja) * 1987-06-10 1997-06-11 株式会社日立製作所 液晶表示装置
US5402254B1 (en) * 1990-10-17 1998-09-22 Hitachi Ltd Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon
JP2873632B2 (ja) 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
US5274485A (en) * 1991-06-24 1993-12-28 Sanyo Electric Co., Ltd. Liquid crystal display
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
EP0545327A1 (de) * 1991-12-02 1993-06-09 Matsushita Electric Industrial Co., Ltd. Dünnschichttransistoranordnung für den Gebrauch in einer Flüssigkristallanzeige
JP3133140B2 (ja) * 1992-04-01 2001-02-05 株式会社半導体エネルギー研究所 表示装置
JP2907629B2 (ja) * 1992-04-10 1999-06-21 松下電器産業株式会社 液晶表示パネル
TW226044B (de) * 1992-04-15 1994-07-01 Toshiba Co Ltd
JP3245959B2 (ja) * 1992-06-05 2002-01-15 松下電器産業株式会社 液晶画像表示装置の製造方法
JPH05341315A (ja) * 1992-06-08 1993-12-24 Hitachi Ltd 薄膜トランジスタ基板、液晶表示パネルおよび液晶表示装置
EP0592063A3 (en) * 1992-09-14 1994-07-13 Toshiba Kk Active matrix liquid crystal display device
JP3529153B2 (ja) * 1993-03-04 2004-05-24 三星電子株式会社 液晶表示装置及びその製造方法
JPH06347827A (ja) * 1993-06-07 1994-12-22 Hitachi Ltd 液晶表示装置およびその製造方法
JPH08122821A (ja) * 1994-10-28 1996-05-17 Hitachi Ltd 液晶表示装置およびその製造方法
US5831694A (en) * 1995-06-14 1998-11-03 Hitachi, Ltd. TFT panel for high resolution- and large size- liquid crystal display
KR100359795B1 (ko) * 1995-08-22 2003-01-14 엘지.필립스 엘시디 주식회사 액정표시장치및그제조방법
JPH0980416A (ja) * 1995-09-13 1997-03-28 Sharp Corp 液晶表示装置
KR100223899B1 (ko) * 1996-01-15 1999-10-15 구자홍 액정표시장치의 구조 및 제조방법
JP3222762B2 (ja) * 1996-04-26 2001-10-29 シャープ株式会社 アクティブマトリクス基板およびその製造方法
JPH1020331A (ja) * 1996-06-28 1998-01-23 Sharp Corp 液晶表示装置
KR100209620B1 (ko) * 1996-08-31 1999-07-15 구자홍 액정 표시 장치 및 그 제조방법
KR100241287B1 (ko) * 1996-09-10 2000-02-01 구본준 액정표시소자 제조방법
US6940566B1 (en) 1996-11-26 2005-09-06 Samsung Electronics Co., Ltd. Liquid crystal displays including organic passivation layer contacting a portion of the semiconductor layer between source and drain regions
CN1148600C (zh) * 1996-11-26 2004-05-05 三星电子株式会社 薄膜晶体管基片及其制造方法
US6044128A (en) * 1997-02-04 2000-03-28 Kabushiki Kaisha Toshiba X-ray imaging apparatus and X-ray imaging analysis apparatus
JPH10319428A (ja) * 1997-05-19 1998-12-04 Toshiba Corp アクティブマトリクス型液晶表示装置
JP4324259B2 (ja) * 1998-07-07 2009-09-02 シャープ株式会社 液晶表示装置の製造方法
JP3592535B2 (ja) * 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6909114B1 (en) 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP2001053283A (ja) 1999-08-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US6515648B1 (en) * 1999-08-31 2003-02-04 Semiconductor Energy Laboratory Co., Ltd. Shift register circuit, driving circuit of display device, and display device using the driving circuit
KR100351440B1 (ko) * 1999-12-31 2002-09-09 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그의 제조방법
JP3720689B2 (ja) * 2000-07-31 2005-11-30 キヤノン株式会社 インクジェットヘッド用基体、インクジェットヘッド、インクジェットヘッドの製造方法、インクジェットヘッドの使用方法およびインクジェット記録装置
US6465286B2 (en) * 2000-12-20 2002-10-15 General Electric Company Method of fabricating an imager array
US7095460B2 (en) * 2001-02-26 2006-08-22 Samsung Electronics Co., Ltd. Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
SG116443A1 (en) * 2001-03-27 2005-11-28 Semiconductor Energy Lab Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same.
KR100796749B1 (ko) 2001-05-16 2008-01-22 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 어레이 기판
US7172947B2 (en) * 2004-08-31 2007-02-06 Micron Technology, Inc High dielectric constant transition metal oxide materials
JP2007027773A (ja) * 2006-08-28 2007-02-01 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
CN101819363B (zh) 2009-02-27 2011-12-28 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
JP5604087B2 (ja) * 2009-11-27 2014-10-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101835525B1 (ko) * 2011-02-17 2018-04-20 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN103243303B (zh) * 2013-04-19 2015-06-03 江苏科技大学 一种Ta-Mo-N复合涂层及其制备方法
JP2017078864A (ja) * 2016-11-30 2017-04-27 株式会社半導体エネルギー研究所 液晶表示装置
CN111106261B (zh) * 2019-12-06 2021-02-26 深圳市华星光电半导体显示技术有限公司 显示面板及显示装置

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
GB2056739B (en) * 1979-07-30 1984-03-21 Sharp Kk Segmented type liquid crystal display and driving method thereof
FR2527385B1 (fr) * 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
JPS6045219A (ja) * 1983-08-23 1985-03-11 Toshiba Corp アクテイブマトリクス型表示装置
JPS60213062A (ja) * 1984-04-09 1985-10-25 Hosiden Electronics Co Ltd 薄膜トランジスタの製造方法
DE3689843T2 (de) * 1986-03-06 1994-09-01 Toshiba Kawasaki Kk Steuerschaltung einer Flüssigkristallanzeige.
JP2568857B2 (ja) * 1987-09-22 1997-01-08 セイコーエプソン株式会社 アクティブマトリックス基板
GB2213639B (en) * 1987-12-10 1990-11-07 Seiko Epson Corp "non-linear device, e.g. for a liquid crystal display"
JPH01217325A (ja) * 1988-02-25 1989-08-30 Sharp Corp 液晶表示装置
JPH0814669B2 (ja) * 1988-04-20 1996-02-14 シャープ株式会社 マトリクス型表示装置
JPH0816756B2 (ja) * 1988-08-10 1996-02-21 シャープ株式会社 透過型アクティブマトリクス液晶表示装置
JPH0644625B2 (ja) * 1988-12-31 1994-06-08 三星電子株式会社 アクティブマトリックス液晶表示素子用薄膜トランジスタ
JP2558351B2 (ja) * 1989-06-29 1996-11-27 沖電気工業株式会社 アクティブマトリクス表示パネル

Also Published As

Publication number Publication date
DE69110563T2 (de) 1996-02-29
US5187602A (en) 1993-02-16
JP3226223B2 (ja) 2001-11-05
JPH07181514A (ja) 1995-07-21
KR920003084A (ko) 1992-02-29
KR950006028B1 (ko) 1995-06-07
EP0466495A2 (de) 1992-01-15
EP0466495B1 (de) 1995-06-21
EP0466495A3 (en) 1992-09-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee