DE69023961D1 - Bit- und Block-Löschen einer elektrisch löschbaren und programmierbaren Nur-Lese-Speicheranordnung. - Google Patents
Bit- und Block-Löschen einer elektrisch löschbaren und programmierbaren Nur-Lese-Speicheranordnung.Info
- Publication number
- DE69023961D1 DE69023961D1 DE69023961T DE69023961T DE69023961D1 DE 69023961 D1 DE69023961 D1 DE 69023961D1 DE 69023961 T DE69023961 T DE 69023961T DE 69023961 T DE69023961 T DE 69023961T DE 69023961 D1 DE69023961 D1 DE 69023961D1
- Authority
- DE
- Germany
- Prior art keywords
- bit
- memory array
- programmable read
- electrically erasable
- block erase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/374,113 US5047981A (en) | 1988-07-15 | 1989-06-30 | Bit and block erasing of an electrically erasable and programmable read-only memory array |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69023961D1 true DE69023961D1 (de) | 1996-01-18 |
DE69023961T2 DE69023961T2 (de) | 1996-04-25 |
Family
ID=23475342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69023961T Expired - Fee Related DE69023961T2 (de) | 1989-06-30 | 1990-05-23 | Bit- und Block-Löschen einer elektrisch löschbaren und programmierbaren Nur-Lese-Speicheranordnung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5047981A (de) |
EP (1) | EP0405140B1 (de) |
JP (1) | JPH0380498A (de) |
DE (1) | DE69023961T2 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100204721B1 (ko) * | 1989-08-18 | 1999-06-15 | 가나이 쓰도무 | 메모리블럭으로 분활된 메모리셀 어레이를 갖는 전기적 소거 가능한 반도체 불휘발성 기억장치 |
JP2624864B2 (ja) * | 1990-02-28 | 1997-06-25 | 株式会社東芝 | 不揮発性半導体メモリ |
JP3099887B2 (ja) * | 1990-04-12 | 2000-10-16 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5122985A (en) * | 1990-04-16 | 1992-06-16 | Giovani Santin | Circuit and method for erasing eeprom memory arrays to prevent over-erased cells |
US5313432A (en) * | 1990-05-23 | 1994-05-17 | Texas Instruments Incorporated | Segmented, multiple-decoder memory array and method for programming a memory array |
US5187683A (en) * | 1990-08-31 | 1993-02-16 | Texas Instruments Incorporated | Method for programming EEPROM memory arrays |
JPH04123471A (ja) | 1990-09-14 | 1992-04-23 | Oki Electric Ind Co Ltd | 半導体記憶装置のデータ書込みおよび消去方法 |
US5258949A (en) * | 1990-12-03 | 1993-11-02 | Motorola, Inc. | Nonvolatile memory with enhanced carrier generation and method for programming the same |
JPH04255996A (ja) * | 1991-02-08 | 1992-09-10 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
JP3026869B2 (ja) * | 1991-10-31 | 2000-03-27 | ローム株式会社 | 半導体不揮発性記憶装置の製造方法 |
EP0961290B1 (de) * | 1991-12-09 | 2001-11-14 | Fujitsu Limited | Flash-Speicher mit besserer Löschbarkeit und dessen Schaltung |
EP1032034A1 (de) * | 1992-01-22 | 2000-08-30 | Macronix International Co., Ltd. | Verfahren zur Speicherbauelementherstellung |
US5388069A (en) * | 1992-03-19 | 1995-02-07 | Fujitsu Limited | Nonvolatile semiconductor memory device for preventing erroneous operation caused by over-erase phenomenon |
JP3216230B2 (ja) * | 1992-04-24 | 2001-10-09 | 新日本製鐵株式会社 | 不揮発性半導体メモリセルの書き換え方式 |
JP3075544B2 (ja) * | 1992-04-30 | 2000-08-14 | ローム株式会社 | 不揮発性メモリの使用方法 |
JP3199882B2 (ja) * | 1993-01-13 | 2001-08-20 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR960000616B1 (ko) * | 1993-01-13 | 1996-01-10 | 삼성전자주식회사 | 불휘발성 반도체 메모리 장치 |
US5692194A (en) * | 1993-05-24 | 1997-11-25 | Hughes Aircraft Company | Sequential information integration service for automatically transferring a most recent data entity between a plurality of program modules and a storage in a computer |
JP2839819B2 (ja) | 1993-05-28 | 1998-12-16 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5467307A (en) * | 1993-10-12 | 1995-11-14 | Texas Instruments Incorporated | Memory array utilizing low voltage Fowler-Nordheim Flash EEPROM cell |
KR100193101B1 (ko) * | 1994-07-22 | 1999-06-15 | 모리시다 요이치 | 비휘발성 반도체 기억장치 및 그 구동방법 |
JP3584494B2 (ja) * | 1994-07-25 | 2004-11-04 | ソニー株式会社 | 半導体不揮発性記憶装置 |
JP3204848B2 (ja) * | 1994-08-09 | 2001-09-04 | 株式会社東芝 | レベル変換回路及びこのレベル変換回路を用いてレベル変換されたデータを出力する方法 |
KR0135234B1 (ko) * | 1994-08-09 | 1998-04-22 | 김주용 | 비휘발성 기억소자 제조방법 |
DE69429264T2 (de) * | 1994-09-27 | 2002-06-13 | St Microelectronics Srl | Byte-löschbares EEPROM, das mit einem mit einer einzigen Stromversorgung versehenen Flash-EPROM-System kompatibel ist |
KR0172271B1 (ko) * | 1995-04-25 | 1999-02-01 | 김주용 | 플래쉬 이이피롬 셀의 제조방법 |
US5706228A (en) * | 1996-02-20 | 1998-01-06 | Motorola, Inc. | Method for operating a memory array |
US5673224A (en) * | 1996-02-23 | 1997-09-30 | Micron Quantum Devices, Inc. | Segmented non-volatile memory array with multiple sources with improved word line control circuitry |
US5796657A (en) * | 1996-03-29 | 1998-08-18 | Aplus Integrated Circuits, Inc. | Flash memory with flexible erasing size from multi-byte to multi-block |
JP2977023B2 (ja) * | 1996-09-30 | 1999-11-10 | 日本電気株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
US5953251A (en) * | 1998-12-18 | 1999-09-14 | Motorola, Inc. | Programming method for nonvolatile memories |
JP3920501B2 (ja) * | 1999-04-02 | 2007-05-30 | 株式会社東芝 | 不揮発性半導体記憶装置及びそのデータ消去制御方法 |
US6160739A (en) * | 1999-04-16 | 2000-12-12 | Sandisk Corporation | Non-volatile memories with improved endurance and extended lifetime |
US6101130A (en) * | 1999-06-29 | 2000-08-08 | Motorola Inc. | Semiconductor device memory cell and method for selectively erasing the same |
US6141255A (en) * | 1999-09-02 | 2000-10-31 | Advanced Micro Devices, Inc. | 1 transistor cell for EEPROM application |
US6624024B1 (en) * | 2002-08-29 | 2003-09-23 | Micron Technology, Inc. | Method and apparatus for a flash memory device comprising a source local interconnect |
CN109852544B (zh) * | 2019-03-29 | 2023-07-14 | 欧阳东方 | 细胞分离用微流控芯片及其在肿瘤细胞分离中的应用、细胞分离鉴定方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1494833A (en) * | 1974-10-11 | 1977-12-14 | Plessey Co Ltd | Content addressable memories |
US4115914A (en) * | 1976-03-26 | 1978-09-26 | Hughes Aircraft Company | Electrically erasable non-volatile semiconductor memory |
US4112509A (en) * | 1976-12-27 | 1978-09-05 | Texas Instruments Incorporated | Electrically alterable floating gate semiconductor memory device |
US4130890A (en) * | 1977-06-08 | 1978-12-19 | Itt Industries, Inc. | Integrated DDC memory with bitwise erase |
US4328565A (en) * | 1980-04-07 | 1982-05-04 | Eliyahou Harari | Non-volatile eprom with increased efficiency |
US4377857A (en) * | 1980-11-18 | 1983-03-22 | Fairchild Camera & Instrument | Electrically erasable programmable read-only memory |
DE3138947A1 (de) * | 1981-09-30 | 1983-04-21 | Siemens AG, 1000 Berlin und 8000 München | Speicherzelle mit einem doppel-gate feldeffekttransistor und verfahren zu ihrem betrieb |
US4451905A (en) * | 1981-12-28 | 1984-05-29 | Hughes Aircraft Company | Electrically erasable programmable read-only memory cell having a single transistor |
US4783766A (en) * | 1986-05-30 | 1988-11-08 | Seeq Technology, Inc. | Block electrically erasable EEPROM |
US4924437A (en) * | 1987-12-09 | 1990-05-08 | Texas Instruments Incorporated | Erasable programmable memory including buried diffusion source/drain lines and erase lines |
US4949309A (en) * | 1988-05-11 | 1990-08-14 | Catalyst Semiconductor, Inc. | EEPROM utilizing single transistor per cell capable of both byte erase and flash erase |
-
1989
- 1989-06-30 US US07/374,113 patent/US5047981A/en not_active Expired - Fee Related
-
1990
- 1990-05-23 DE DE69023961T patent/DE69023961T2/de not_active Expired - Fee Related
- 1990-05-23 EP EP90109884A patent/EP0405140B1/de not_active Expired - Lifetime
- 1990-06-29 JP JP2172517A patent/JPH0380498A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5047981A (en) | 1991-09-10 |
DE69023961T2 (de) | 1996-04-25 |
EP0405140A1 (de) | 1991-01-02 |
EP0405140B1 (de) | 1995-12-06 |
JPH0380498A (ja) | 1991-04-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |