DE69116099D1 - Elektrisch löschbarer und programmierbarer Festwertspeicher mit Grabenstruktur - Google Patents

Elektrisch löschbarer und programmierbarer Festwertspeicher mit Grabenstruktur

Info

Publication number
DE69116099D1
DE69116099D1 DE69116099T DE69116099T DE69116099D1 DE 69116099 D1 DE69116099 D1 DE 69116099D1 DE 69116099 T DE69116099 T DE 69116099T DE 69116099 T DE69116099 T DE 69116099T DE 69116099 D1 DE69116099 D1 DE 69116099D1
Authority
DE
Germany
Prior art keywords
memory
programmable read
electrically erasable
trench structure
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69116099T
Other languages
English (en)
Other versions
DE69116099T2 (de
Inventor
Satyendranath Mukherjee
Len-Yuan Tsou
Di-Son Kuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of DE69116099D1 publication Critical patent/DE69116099D1/de
Application granted granted Critical
Publication of DE69116099T2 publication Critical patent/DE69116099T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE69116099T 1990-11-08 1991-10-31 Elektrisch löschbarer und programmierbarer Festwertspeicher mit Grabenstruktur Expired - Fee Related DE69116099T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/610,598 US5146426A (en) 1990-11-08 1990-11-08 Electrically erasable and programmable read only memory with trench structure

Publications (2)

Publication Number Publication Date
DE69116099D1 true DE69116099D1 (de) 1996-02-15
DE69116099T2 DE69116099T2 (de) 1996-08-08

Family

ID=24445675

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69116099T Expired - Fee Related DE69116099T2 (de) 1990-11-08 1991-10-31 Elektrisch löschbarer und programmierbarer Festwertspeicher mit Grabenstruktur

Country Status (5)

Country Link
US (1) US5146426A (de)
EP (1) EP0485018B1 (de)
JP (1) JP3255666B2 (de)
KR (1) KR100247258B1 (de)
DE (1) DE69116099T2 (de)

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JP2889061B2 (ja) * 1992-09-25 1999-05-10 ローム株式会社 半導体記憶装置およびその製法
US5386132A (en) * 1992-11-02 1995-01-31 Wong; Chun C. D. Multimedia storage system with highly compact memory device
JPH06318680A (ja) * 1993-05-10 1994-11-15 Nec Corp 半導体記憶装置およびその製造方法
US6201277B1 (en) * 1993-08-31 2001-03-13 Texas Instruments Incorporated Slot trench isolation for flash EPROM
US5506431A (en) * 1994-05-16 1996-04-09 Thomas; Mammen Double poly trenched channel accelerated tunneling electron (DPT-CATE) cell, for memory applications
US5606521A (en) * 1995-06-28 1997-02-25 Philips Electronics North America Corp. Electrically erasable and programmable read only memory with non-uniform dielectric thickness
JP3403877B2 (ja) * 1995-10-25 2003-05-06 三菱電機株式会社 半導体記憶装置とその製造方法
US6362504B1 (en) * 1995-11-22 2002-03-26 Philips Electronics North America Corporation Contoured nonvolatile memory cell
US5998263A (en) * 1996-05-16 1999-12-07 Altera Corporation High-density nonvolatile memory cell
US5751038A (en) * 1996-11-26 1998-05-12 Philips Electronics North America Corporation Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers
US5780341A (en) * 1996-12-06 1998-07-14 Halo Lsi Design & Device Technology, Inc. Low voltage EEPROM/NVRAM transistors and making method
JP2964969B2 (ja) * 1996-12-20 1999-10-18 日本電気株式会社 不揮発性半導体記憶装置及びその製造方法
KR100218260B1 (ko) * 1997-01-14 1999-09-01 김덕중 트랜치 게이트형 모스트랜지스터의 제조방법
US5929477A (en) * 1997-01-22 1999-07-27 International Business Machines Corporation Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array
US5874760A (en) * 1997-01-22 1999-02-23 International Business Machines Corporation 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation
US6034389A (en) * 1997-01-22 2000-03-07 International Business Machines Corporation Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array
US5990509A (en) * 1997-01-22 1999-11-23 International Business Machines Corporation 2F-square memory cell for gigabit memory applications
US6717179B1 (en) 1997-08-19 2004-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor display device
US6667494B1 (en) * 1997-08-19 2003-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor display device
JPH11143379A (ja) 1997-09-03 1999-05-28 Semiconductor Energy Lab Co Ltd 半導体表示装置補正システムおよび半導体表示装置の補正方法
US6124608A (en) * 1997-12-18 2000-09-26 Advanced Micro Devices, Inc. Non-volatile trench semiconductor device having a shallow drain region
US6087222A (en) * 1998-03-05 2000-07-11 Taiwan Semiconductor Manufacturing Company Method of manufacture of vertical split gate flash memory device
US6147377A (en) * 1998-03-30 2000-11-14 Advanced Micro Devices, Inc. Fully recessed semiconductor device
US6147378A (en) * 1998-03-30 2000-11-14 Advanced Micro Devices, Inc. Fully recessed semiconductor device and method for low power applications with single wrap around buried drain region
US6614074B2 (en) 1998-06-05 2003-09-02 International Business Machines Corporation Grooved planar DRAM transfer device using buried pocket
US6137128A (en) * 1998-06-09 2000-10-24 International Business Machines Corporation Self-isolated and self-aligned 4F-square vertical fet-trench dram cells
JP3303789B2 (ja) * 1998-09-01 2002-07-22 日本電気株式会社 フラッシュメモリ、その書き込み・消去方法
TW518637B (en) 1999-04-15 2003-01-21 Semiconductor Energy Lab Electro-optical device and electronic equipment
TW442972B (en) * 1999-10-01 2001-06-23 Anpec Electronics Corp Fabricating method of trench-type gate power metal oxide semiconductor field effect transistor
US6800899B2 (en) * 2001-08-30 2004-10-05 Micron Technology, Inc. Vertical transistors, electrical devices containing a vertical transistor, and computer systems containing a vertical transistor
US6486028B1 (en) * 2001-11-20 2002-11-26 Macronix International Co., Ltd. Method of fabricating a nitride read-only-memory cell vertical structure
US6661053B2 (en) * 2001-12-18 2003-12-09 Infineon Technologies Ag Memory cell with trench transistor
US20040004863A1 (en) * 2002-07-05 2004-01-08 Chih-Hsin Wang Nonvolatile electrically alterable memory device and array made thereby
US6873003B2 (en) * 2003-03-06 2005-03-29 Infineon Technologies Aktiengesellschaft Nonvolatile memory cell
US7115942B2 (en) * 2004-07-01 2006-10-03 Chih-Hsin Wang Method and apparatus for nonvolatile memory
US6958513B2 (en) * 2003-06-06 2005-10-25 Chih-Hsin Wang Floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells
US7297634B2 (en) * 2003-06-06 2007-11-20 Marvell World Trade Ltd. Method and apparatus for semiconductor device and semiconductor memory device
US7613041B2 (en) * 2003-06-06 2009-11-03 Chih-Hsin Wang Methods for operating semiconductor device and semiconductor memory device
US7759719B2 (en) * 2004-07-01 2010-07-20 Chih-Hsin Wang Electrically alterable memory cell
US7550800B2 (en) * 2003-06-06 2009-06-23 Chih-Hsin Wang Method and apparatus transporting charges in semiconductor device and semiconductor memory device
US7095075B2 (en) 2003-07-01 2006-08-22 Micron Technology, Inc. Apparatus and method for split transistor memory having improved endurance
US6977412B2 (en) * 2003-09-05 2005-12-20 Micron Technology, Inc. Trench corner effect bidirectional flash memory cell
US7148538B2 (en) 2003-12-17 2006-12-12 Micron Technology, Inc. Vertical NAND flash memory array
US20080203464A1 (en) * 2004-07-01 2008-08-28 Chih-Hsin Wang Electrically alterable non-volatile memory and array
CN100373625C (zh) * 2004-12-03 2008-03-05 马维尔世界贸易股份有限公司 可擦除与可编程的只读存储器元件和制造及操作方法
KR100654341B1 (ko) * 2004-12-08 2006-12-08 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
US7312490B2 (en) * 2005-03-31 2007-12-25 Intel Corporation Vertical memory device and method
US7411244B2 (en) 2005-06-28 2008-08-12 Chih-Hsin Wang Low power electrically alterable nonvolatile memory cells and arrays
US7342272B2 (en) * 2005-08-31 2008-03-11 Micron Technology, Inc. Flash memory with recessed floating gate
KR100707217B1 (ko) 2006-05-26 2007-04-13 삼성전자주식회사 리세스-타입 제어 게이트 전극을 구비하는 반도체 메모리소자 및 그 제조 방법
KR20080035211A (ko) 2006-10-18 2008-04-23 삼성전자주식회사 리세스-타입 제어 게이트 전극을 구비하는 반도체 메모리소자
US8072023B1 (en) 2007-11-12 2011-12-06 Marvell International Ltd. Isolation for non-volatile memory cell array
US8120088B1 (en) 2007-12-07 2012-02-21 Marvell International Ltd. Non-volatile memory cell and array
FR2953643B1 (fr) * 2009-12-08 2012-07-27 Soitec Silicon On Insulator Cellule memoire flash sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante
US10103226B2 (en) * 2012-04-30 2018-10-16 International Business Machines Corporation Method of fabricating tunnel transistors with abrupt junctions
US9105667B2 (en) * 2013-03-14 2015-08-11 Macronix International Co., Ltd. Semiconductor device having polysilicon mask layer
US9231049B1 (en) * 2014-06-20 2016-01-05 Infineon Technologies Austria Ag Semiconductor switching device with different local cell geometry
US9293533B2 (en) 2014-06-20 2016-03-22 Infineon Technologies Austria Ag Semiconductor switching devices with different local transconductance
US9349795B2 (en) * 2014-06-20 2016-05-24 Infineon Technologies Austria Ag Semiconductor switching device with different local threshold voltage
CN106486529A (zh) * 2015-08-24 2017-03-08 联华电子股份有限公司 存储器元件及其制造方法
KR102184467B1 (ko) * 2017-07-03 2020-11-30 (주)엘지하우시스 자동차 내장재용 열가소성 수지 조성물 및 자동차 내장재용 성형품

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USRE33261E (en) * 1984-07-03 1990-07-10 Texas Instruments, Incorporated Trench capacitor for high density dynamic RAM
JPS6276563A (ja) * 1985-09-28 1987-04-08 Nippon Denso Co Ltd 不揮発性半導体記憶装置
US4796228A (en) * 1986-06-02 1989-01-03 Texas Instruments Incorporated Erasable electrically programmable read only memory cell using trench edge tunnelling
JPH01227477A (ja) * 1988-03-08 1989-09-11 Sony Corp 不揮発性メモリ装置

Also Published As

Publication number Publication date
KR920010646A (ko) 1992-06-27
JPH04267374A (ja) 1992-09-22
EP0485018A3 (en) 1993-05-12
EP0485018A2 (de) 1992-05-13
US5146426A (en) 1992-09-08
EP0485018B1 (de) 1996-01-03
DE69116099T2 (de) 1996-08-08
JP3255666B2 (ja) 2002-02-12
KR100247258B1 (ko) 2000-03-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee