DE3850482D1 - Elektrisch löschbarer und programmierbarer Festwertspeicher mit Stapelgatterzellen. - Google Patents

Elektrisch löschbarer und programmierbarer Festwertspeicher mit Stapelgatterzellen.

Info

Publication number
DE3850482D1
DE3850482D1 DE3850482T DE3850482T DE3850482D1 DE 3850482 D1 DE3850482 D1 DE 3850482D1 DE 3850482 T DE3850482 T DE 3850482T DE 3850482 T DE3850482 T DE 3850482T DE 3850482 D1 DE3850482 D1 DE 3850482D1
Authority
DE
Germany
Prior art keywords
memory
programmable read
electrically erasable
stack gate
gate cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3850482T
Other languages
English (en)
Other versions
DE3850482T2 (de
Inventor
Hideki Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE3850482D1 publication Critical patent/DE3850482D1/de
Application granted granted Critical
Publication of DE3850482T2 publication Critical patent/DE3850482T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
DE3850482T 1987-12-15 1988-12-14 Elektrisch löschbarer und programmierbarer Festwertspeicher mit Stapelgatterzellen. Expired - Fee Related DE3850482T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62318172A JPH01158777A (ja) 1987-12-15 1987-12-15 フローティングゲート型不揮発性メモリ

Publications (2)

Publication Number Publication Date
DE3850482D1 true DE3850482D1 (de) 1994-08-04
DE3850482T2 DE3850482T2 (de) 1995-02-16

Family

ID=18096272

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850482T Expired - Fee Related DE3850482T2 (de) 1987-12-15 1988-12-14 Elektrisch löschbarer und programmierbarer Festwertspeicher mit Stapelgatterzellen.

Country Status (5)

Country Link
US (1) US5136541A (de)
EP (1) EP0320916B1 (de)
JP (1) JPH01158777A (de)
KR (1) KR890010918A (de)
DE (1) DE3850482T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69024086T2 (de) * 1989-04-13 1996-06-20 Sundisk Corp EEprom-System mit Blocklöschung
US5265052A (en) * 1989-07-20 1993-11-23 Texas Instruments Incorporated Wordline driver circuit for EEPROM memory cell
JP3099887B2 (ja) * 1990-04-12 2000-10-16 株式会社東芝 不揮発性半導体記憶装置
US6002536A (en) * 1990-07-06 1999-12-14 Hitachi Ltd. Digital transmission signal processing system and recording/reproducing system
US5519654A (en) * 1990-09-17 1996-05-21 Kabushiki Kaisha Toshiba Semiconductor memory device with external capacitor to charge pump in an EEPROM circuit
US5235544A (en) * 1990-11-09 1993-08-10 John Caywood Flash EPROM cell and method for operating same
US5289423A (en) * 1990-11-16 1994-02-22 Sgs-Thomson Microelectronics S.R.L. Bank erasable, flash-EPROM memory
US5243559A (en) * 1990-12-12 1993-09-07 Nippon Steel Corporation Semiconductor memory device
JP2794974B2 (ja) * 1991-04-10 1998-09-10 日本電気株式会社 不揮発性半導体記憶装置の起動方法
JP2835215B2 (ja) * 1991-07-25 1998-12-14 株式会社東芝 不揮発性半導体記憶装置
JPH05102438A (ja) * 1991-10-04 1993-04-23 Mitsubishi Electric Corp 不揮発性半導体記憶装置
EP0570597B1 (de) * 1991-12-09 2001-03-21 Fujitsu Limited Flash-speicher mit verbesserten löscheigenschaften und schaltung dafür
US5396459A (en) * 1992-02-24 1995-03-07 Sony Corporation Single transistor flash electrically programmable memory cell in which a negative voltage is applied to the nonselected word line
JP3267436B2 (ja) * 1993-04-19 2002-03-18 三菱電機株式会社 半導体装置
JP3260761B2 (ja) * 1994-09-13 2002-02-25 マクロニクス インターナショナル カンパニイ リミテッド フラッシュ・イーピーロム集積回路構造
WO1996023307A1 (en) * 1995-01-26 1996-08-01 Macronix International Co., Ltd. Decoded wordline driver with positive and negative voltage modes
DE19612456C2 (de) * 1996-03-28 2000-09-28 Siemens Ag Halbleiterspeichervorrichtung
EP0979489B1 (de) * 1997-12-05 2004-10-06 Macronix International Co., Ltd. Speichertreiber mit variablen spannungsmoden
US6021083A (en) * 1997-12-05 2000-02-01 Macronix International Co., Ltd. Block decoded wordline driver with positive and negative voltage modes
KR100418718B1 (ko) * 2000-06-29 2004-02-14 주식회사 하이닉스반도체 플래쉬 메모리 셀의 소거 방법
WO2002056316A1 (fr) * 2001-01-12 2002-07-18 Hitachi, Ltd. Memoire remanente a semi-conducteur
CN100334715C (zh) * 2003-01-14 2007-08-29 力旺电子股份有限公司 非易失性存储元件
JP2006086892A (ja) * 2004-09-16 2006-03-30 Seiko Instruments Inc 半導体集積回路装置
KR100843037B1 (ko) * 2007-03-27 2008-07-01 주식회사 하이닉스반도체 플래시 메모리 장치 및 이의 소거 방법
US8913436B2 (en) * 2013-03-14 2014-12-16 Freescale Semiconductor, Inc. Non-volatile memory (NVM) with word line driver/decoder using a charge pump voltage

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025837B2 (ja) * 1978-09-14 1985-06-20 株式会社東芝 半導体記憶装置
JPS5619676A (en) * 1979-07-26 1981-02-24 Fujitsu Ltd Semiconductor device
US4377857A (en) * 1980-11-18 1983-03-22 Fairchild Camera & Instrument Electrically erasable programmable read-only memory
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
JPS58182876A (ja) * 1982-04-21 1983-10-25 Oki Electric Ind Co Ltd 半導体メモリ素子の製造方法
DE3277715D1 (en) * 1982-08-06 1987-12-23 Itt Ind Gmbh Deutsche Electrically programmable memory array
EP0108681A3 (de) * 1982-11-04 1986-10-15 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Bit-löschbarer EEPROM
JPS59124095A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 半導体記憶装置
JPH077599B2 (ja) * 1984-05-25 1995-01-30 株式会社日立製作所 半導体集積回路装置
JPH0697696B2 (ja) * 1985-04-23 1994-11-30 株式会社東芝 不揮発性半導体メモリ素子
KR940011426B1 (ko) * 1985-07-26 1994-12-15 가부시기가이샤 히다찌세이사꾸쇼 반도체 기억 장치
JPS63249375A (ja) * 1987-04-06 1988-10-17 Oki Electric Ind Co Ltd 半導体記憶装置のデ−タ消去方法

Also Published As

Publication number Publication date
EP0320916A2 (de) 1989-06-21
KR890010918A (ko) 1989-08-11
JPH01158777A (ja) 1989-06-21
DE3850482T2 (de) 1995-02-16
US5136541A (en) 1992-08-04
EP0320916B1 (de) 1994-06-29
EP0320916A3 (de) 1991-03-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee