DE68922004T2 - Elektrisch löschbare und programmierbare Nur-Lesespeicherzelle. - Google Patents
Elektrisch löschbare und programmierbare Nur-Lesespeicherzelle.Info
- Publication number
- DE68922004T2 DE68922004T2 DE68922004T DE68922004T DE68922004T2 DE 68922004 T2 DE68922004 T2 DE 68922004T2 DE 68922004 T DE68922004 T DE 68922004T DE 68922004 T DE68922004 T DE 68922004T DE 68922004 T2 DE68922004 T2 DE 68922004T2
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- programmable read
- electrically erasable
- erasable
- electrically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15278988A | 1988-02-05 | 1988-02-05 | |
US21952888A | 1988-07-15 | 1988-07-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68922004D1 DE68922004D1 (de) | 1995-05-11 |
DE68922004T2 true DE68922004T2 (de) | 1995-10-12 |
Family
ID=26849867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68922004T Expired - Fee Related DE68922004T2 (de) | 1988-02-05 | 1989-01-20 | Elektrisch löschbare und programmierbare Nur-Lesespeicherzelle. |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0326877B1 (de) |
JP (1) | JPH025573A (de) |
KR (1) | KR890013779A (de) |
DE (1) | DE68922004T2 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69121775T2 (de) * | 1990-06-01 | 1997-01-30 | Texas Instruments Inc | Auslöschbare programmierbare Speicheranordnung |
US5032881A (en) * | 1990-06-29 | 1991-07-16 | National Semiconductor Corporation | Asymmetric virtual ground EPROM cell and fabrication method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4258466A (en) * | 1978-11-02 | 1981-03-31 | Texas Instruments Incorporated | High density electrically programmable ROM |
US4409723A (en) * | 1980-04-07 | 1983-10-18 | Eliyahou Harari | Method of forming non-volatile EPROM and EEPROM with increased efficiency |
CA1204862A (en) * | 1982-09-30 | 1986-05-20 | Ning Hsieh | Programmable read only memory |
JPS60502128A (ja) * | 1983-08-29 | 1985-12-05 | シ−ク・テクノロジイ・インコ−ポレイテツド | 不揮発性mosメモリ装置の製造方法 |
JPS60134478A (ja) * | 1983-11-28 | 1985-07-17 | ローム・コーポレーション | 電気的プログラム式記憶装置を製造する方法 |
-
1989
- 1989-01-20 DE DE68922004T patent/DE68922004T2/de not_active Expired - Fee Related
- 1989-01-20 EP EP89101007A patent/EP0326877B1/de not_active Expired - Lifetime
- 1989-02-03 JP JP1025592A patent/JPH025573A/ja active Pending
- 1989-02-04 KR KR1019890001324A patent/KR890013779A/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP0326877A2 (de) | 1989-08-09 |
JPH025573A (ja) | 1990-01-10 |
EP0326877A3 (en) | 1990-06-27 |
DE68922004D1 (de) | 1995-05-11 |
KR890013779A (ko) | 1989-09-26 |
EP0326877B1 (de) | 1995-04-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |