DE68921770T2 - Bipolare Speicherzelle. - Google Patents

Bipolare Speicherzelle.

Info

Publication number
DE68921770T2
DE68921770T2 DE1989621770 DE68921770T DE68921770T2 DE 68921770 T2 DE68921770 T2 DE 68921770T2 DE 1989621770 DE1989621770 DE 1989621770 DE 68921770 T DE68921770 T DE 68921770T DE 68921770 T2 DE68921770 T2 DE 68921770T2
Authority
DE
Germany
Prior art keywords
memory cell
bipolar memory
bipolar
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1989621770
Other languages
English (en)
Other versions
DE68921770D1 (de
Inventor
Thomas Sing Wai Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microchip Technology Inc
Original Assignee
Synergy Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Synergy Semiconductor Corp filed Critical Synergy Semiconductor Corp
Publication of DE68921770D1 publication Critical patent/DE68921770D1/de
Application granted granted Critical
Publication of DE68921770T2 publication Critical patent/DE68921770T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
DE1989621770 1988-01-11 1989-01-10 Bipolare Speicherzelle. Expired - Fee Related DE68921770T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14203288A 1988-01-11 1988-01-11

Publications (2)

Publication Number Publication Date
DE68921770D1 DE68921770D1 (de) 1995-04-27
DE68921770T2 true DE68921770T2 (de) 1995-07-13

Family

ID=22498293

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1989621770 Expired - Fee Related DE68921770T2 (de) 1988-01-11 1989-01-10 Bipolare Speicherzelle.

Country Status (3)

Country Link
EP (1) EP0324580B1 (de)
JP (1) JP2755979B2 (de)
DE (1) DE68921770T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5276638A (en) * 1991-07-31 1994-01-04 International Business Machines Corporation Bipolar memory cell with isolated PNP load
JP4133062B2 (ja) 2002-07-19 2008-08-13 大日本スクリーン製造株式会社 熱処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5829628B2 (ja) * 1979-11-22 1983-06-23 富士通株式会社 半導体記憶装置
FR2579816A1 (fr) * 1985-03-29 1986-10-03 Radiotechnique Compelec Memoire a acces selectif a charge active

Also Published As

Publication number Publication date
JPH025294A (ja) 1990-01-10
DE68921770D1 (de) 1995-04-27
EP0324580A3 (de) 1991-09-18
EP0324580B1 (de) 1995-03-22
JP2755979B2 (ja) 1998-05-25
EP0324580A2 (de) 1989-07-19

Similar Documents

Publication Publication Date Title
DE344894T1 (de) Speicherzelle.
DE68923061T2 (de) Sonnenzelle.
DE3885408D1 (de) Nichtflüchtige Speicherzelle.
DE3686626D1 (de) Speicherzelle.
NO893805D0 (no) Brenselcelle.
FI875566A (fi) Elektrolytisk cell foer alkalimetallhydrosulfitloesningar.
DE3689004T2 (de) Halbleiterspeicherzelle.
NO893484D0 (no) Brenselcelle.
DE3767729D1 (de) Assoziativspeicherzelle.
DE3783100D1 (de) Festwertspeicheranordnung.
DE3680829D1 (de) Festwertspeicheranordnung.
DE3879766T2 (de) Halbleiter Speicherzelle.
FI883527A (fi) Elektrolytisk cell.
FI891201A (fi) Elektrokemisk cell.
FI893497A (fi) Elektrokemisk cell med dubbelverkande elektrod.
DE68910905T2 (de) Sonnenzelle.
DE3750872T2 (de) Nichtflüchtige speicherzelle.
DE68924860D1 (de) Erweiterte Speicheranordnung.
DE3854005D1 (de) Speicherzelle.
DE3685717D1 (de) Speicherzellenanordnung.
DE68915211T2 (de) Standardzelle.
DE3850048D1 (de) Speicherzellenzugriff.
DE3775508D1 (de) Speicherzellschaltung.
DE3775379D1 (de) Nichtfluechtige speicherzellenanordnung.
DE3779618D1 (de) Halbleiterspeicher mit zellenanordnung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee