DE68922005D1 - Elektrisch löschbare und programmierbare Nur-Lesespeicherzelle. - Google Patents

Elektrisch löschbare und programmierbare Nur-Lesespeicherzelle.

Info

Publication number
DE68922005D1
DE68922005D1 DE68922005T DE68922005T DE68922005D1 DE 68922005 D1 DE68922005 D1 DE 68922005D1 DE 68922005 T DE68922005 T DE 68922005T DE 68922005 T DE68922005 T DE 68922005T DE 68922005 D1 DE68922005 D1 DE 68922005D1
Authority
DE
Germany
Prior art keywords
memory cell
programmable read
electrically erasable
erasable
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68922005T
Other languages
English (en)
Other versions
DE68922005T2 (de
Inventor
Manzur Gill
Sung-Wei Lin
Arrigo Sebastiano D
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE68922005D1 publication Critical patent/DE68922005D1/de
Publication of DE68922005T2 publication Critical patent/DE68922005T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE68922005T 1988-02-05 1989-01-20 Elektrisch löschbare und programmierbare Nur-Lesespeicherzelle. Expired - Fee Related DE68922005T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15279088A 1988-02-05 1988-02-05
US21953088A 1988-07-15 1988-07-15

Publications (2)

Publication Number Publication Date
DE68922005D1 true DE68922005D1 (de) 1995-05-11
DE68922005T2 DE68922005T2 (de) 1995-08-10

Family

ID=26849868

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68922005T Expired - Fee Related DE68922005T2 (de) 1988-02-05 1989-01-20 Elektrisch löschbare und programmierbare Nur-Lesespeicherzelle.

Country Status (4)

Country Link
EP (1) EP0326879B1 (de)
JP (1) JPH025574A (de)
KR (1) KR890013778A (de)
DE (1) DE68922005T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404037A (en) * 1994-03-17 1995-04-04 National Semiconductor Corporation EEPROM cell with the drain diffusion region self-aligned to the tunnel oxide region

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4258466A (en) * 1978-11-02 1981-03-31 Texas Instruments Incorporated High density electrically programmable ROM
US4409723A (en) * 1980-04-07 1983-10-18 Eliyahou Harari Method of forming non-volatile EPROM and EEPROM with increased efficiency
JPS59112657A (ja) * 1982-09-30 1984-06-29 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン 書込可能なリ−ドオンリ−メモリ
WO1985001446A1 (en) * 1983-09-30 1985-04-11 Hydra-Gym Athletics, Inc. Shoulder exercising device

Also Published As

Publication number Publication date
DE68922005T2 (de) 1995-08-10
JPH025574A (ja) 1990-01-10
KR890013778A (ko) 1989-09-26
EP0326879B1 (de) 1995-04-05
EP0326879A3 (en) 1990-07-11
EP0326879A2 (de) 1989-08-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee