DE3886668D1 - Löschbares programmierbares Festwertspeichergerät. - Google Patents

Löschbares programmierbares Festwertspeichergerät.

Info

Publication number
DE3886668D1
DE3886668D1 DE88117478T DE3886668T DE3886668D1 DE 3886668 D1 DE3886668 D1 DE 3886668D1 DE 88117478 T DE88117478 T DE 88117478T DE 3886668 T DE3886668 T DE 3886668T DE 3886668 D1 DE3886668 D1 DE 3886668D1
Authority
DE
Germany
Prior art keywords
memory device
programmable read
erasable programmable
erasable
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88117478T
Other languages
English (en)
Other versions
DE3886668T2 (de
Inventor
Takahiko Urai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3886668D1 publication Critical patent/DE3886668D1/de
Application granted granted Critical
Publication of DE3886668T2 publication Critical patent/DE3886668T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
DE3886668T 1987-10-22 1988-10-20 Löschbares programmierbares Festwertspeichergerät. Expired - Fee Related DE3886668T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62267797A JPH01109599A (ja) 1987-10-22 1987-10-22 書込み・消去可能な半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3886668D1 true DE3886668D1 (de) 1994-02-10
DE3886668T2 DE3886668T2 (de) 1994-06-09

Family

ID=17449729

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3886668T Expired - Fee Related DE3886668T2 (de) 1987-10-22 1988-10-20 Löschbares programmierbares Festwertspeichergerät.

Country Status (4)

Country Link
US (1) US4881200A (de)
EP (1) EP0313040B1 (de)
JP (1) JPH01109599A (de)
DE (1) DE3886668T2 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02226589A (ja) * 1989-02-27 1990-09-10 Nec Corp 半導体記憶装置
JPH02292647A (ja) * 1989-05-02 1990-12-04 Toshiba Corp 半導体記憶装置
KR920001082B1 (ko) * 1989-06-13 1992-02-01 삼성전자 주식회사 반도체 메모리장치에 있어서 메모리 테스트용 멀티바이트 광역 병렬 라이트회로
JPH081755B2 (ja) * 1989-06-26 1996-01-10 日本電気株式会社 置換アドレス判定回路
JP2582439B2 (ja) * 1989-07-11 1997-02-19 富士通株式会社 書き込み可能な半導体記憶装置
US5343406A (en) * 1989-07-28 1994-08-30 Xilinx, Inc. Distributed memory architecture for a configurable logic array and method for using distributed memory
FR2655177A1 (fr) * 1989-11-24 1991-05-31 Sgs Thomson Microelectronics Circuit de redondance avec memorisation de position de plot de sortie.
KR920009059B1 (ko) * 1989-12-29 1992-10-13 삼성전자 주식회사 반도체 메모리 장치의 병렬 테스트 방법
US5265100A (en) * 1990-07-13 1993-11-23 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with improved test mode
JP3178859B2 (ja) * 1991-06-05 2001-06-25 株式会社東芝 ランダムアクセスメモリ装置およびそのパイプライン・ページモード制御方法
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US6781895B1 (en) * 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP2738195B2 (ja) * 1991-12-27 1998-04-08 日本電気株式会社 不揮発性半導体記憶装置
WO1994003901A1 (en) 1992-08-10 1994-02-17 Monolithic System Technology, Inc. Fault-tolerant, high-speed bus system and bus interface for wafer-scale integration
US5377146A (en) * 1993-07-23 1994-12-27 Alliance Semiconductor Corporation Hierarchical redundancy scheme for high density monolithic memories
EP0661636B1 (de) * 1993-12-29 1998-09-23 STMicroelectronics S.r.l. Integrierte Programmierschaltung für eine elektrisch programmierbare Halbleiterspeicheranordnung mit Redundanz
US5655113A (en) * 1994-07-05 1997-08-05 Monolithic System Technology, Inc. Resynchronization circuit for a memory system and method of operating same
US6108237A (en) 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US5627786A (en) * 1995-02-10 1997-05-06 Micron Quantum Devices, Inc. Parallel processing redundancy scheme for faster access times and lower die area
US5502676A (en) * 1995-04-24 1996-03-26 Motorola, Inc. Integrated circuit memory with column redundancy having shared read global data lines
EP0797146B1 (de) * 1996-03-20 2002-02-27 STMicroelectronics S.r.l. Verwaltungseinrichtung zur Ein-/Ausgabe von Daten, insbesondere für einen nicht flüchtigen Speicher
JPH1092193A (ja) * 1996-09-19 1998-04-10 Toshiba Corp 半導体記憶装置
US5841710A (en) * 1997-02-14 1998-11-24 Micron Electronics, Inc. Dynamic address remapping decoder
US6314527B1 (en) 1998-03-05 2001-11-06 Micron Technology, Inc. Recovery of useful areas of partially defective synchronous memory components
US6332183B1 (en) 1998-03-05 2001-12-18 Micron Technology, Inc. Method for recovery of useful areas of partially defective synchronous memory components
US6381708B1 (en) 1998-04-28 2002-04-30 Micron Technology, Inc. Method for decoding addresses for a defective memory array
US6381707B1 (en) 1998-04-28 2002-04-30 Micron Technology, Inc. System for decoding addresses for a defective memory array
US6496876B1 (en) 1998-12-21 2002-12-17 Micron Technology, Inc. System and method for storing a tag to identify a functional storage location in a memory device
US6178129B1 (en) * 1999-10-19 2001-01-23 Advanced Micro Devices, Inc. Separate output power supply to reduce output noise for a simultaneous operation
US6578157B1 (en) 2000-03-06 2003-06-10 Micron Technology, Inc. Method and apparatus for recovery of useful areas of partially defective direct rambus rimm components
US7269765B1 (en) 2000-04-13 2007-09-11 Micron Technology, Inc. Method and apparatus for storing failing part locations in a module
US7117400B2 (en) * 2002-11-13 2006-10-03 International Business Machines Corporation Memory device with data line steering and bitline redundancy
KR100645044B1 (ko) * 2004-09-17 2006-11-10 삼성전자주식회사 높은 신뢰도를 갖는 불 휘발성 메모리 장치의 프로그램 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047163A (en) * 1975-07-03 1977-09-06 Texas Instruments Incorporated Fault-tolerant cell addressable array
JPS5384633A (en) * 1976-12-30 1978-07-26 Fujitsu Ltd Memory system having redundancy memory cell
EP0214705B1 (de) * 1980-10-15 1992-01-15 Kabushiki Kaisha Toshiba Halbleiterspeicher mit Datenprogrammierzeit
JPS59107493A (ja) * 1982-12-09 1984-06-21 Ricoh Co Ltd テスト回路付きｅｐｒｏｍメモリ装置
JPH0670880B2 (ja) * 1983-01-21 1994-09-07 株式会社日立マイコンシステム 半導体記憶装置
US4586178A (en) * 1983-10-06 1986-04-29 Eaton Corporation High speed redundancy processor
JPS6148200A (ja) * 1984-08-14 1986-03-08 Fujitsu Ltd 半導体記憶装置
JPS6159698A (ja) * 1984-08-30 1986-03-27 Mitsubishi Electric Corp 半導体記憶装置
US4719602A (en) * 1985-02-07 1988-01-12 Visic, Inc. Memory with improved column access
US4757474A (en) * 1986-01-28 1988-07-12 Fujitsu Limited Semiconductor memory device having redundancy circuit portion

Also Published As

Publication number Publication date
EP0313040A2 (de) 1989-04-26
EP0313040B1 (de) 1993-12-29
DE3886668T2 (de) 1994-06-09
US4881200A (en) 1989-11-14
EP0313040A3 (en) 1990-10-10
JPH01109599A (ja) 1989-04-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee