US5050124A
(en)
*
|
1986-09-30 |
1991-09-17 |
Kabushiki Kaisha Toshiba |
Semiconductor memory having load transistor circuit
|
JPS63251999A
(ja)
*
|
1987-04-08 |
1988-10-19 |
Mitsubishi Electric Corp |
半導体記憶装置
|
US5010520A
(en)
*
|
1987-07-29 |
1991-04-23 |
Kabushiki Kaisha Toshiba |
Nonvolatile semiconductor memory device with stabilized data write characteristic
|
JPH0754636B2
(ja)
*
|
1987-07-30 |
1995-06-07 |
日本電気株式会社 |
不揮発性半導体記憶装置
|
JPH081759B2
(ja)
*
|
1987-11-24 |
1996-01-10 |
株式会社東芝 |
不揮発性メモリ
|
EP0317939B1
(de)
*
|
1987-11-25 |
1994-03-09 |
Nec Corporation |
Eingangsschaltung, die in eine Halbleiteranlage eingegliedert ist
|
US4858187A
(en)
*
|
1988-02-01 |
1989-08-15 |
Texas Instruments Incorporated |
Programming implementation circuit
|
JPH0793018B2
(ja)
*
|
1988-03-14 |
1995-10-09 |
株式会社東芝 |
不揮発性半導体メモリ
|
US4829203A
(en)
*
|
1988-04-20 |
1989-05-09 |
Texas Instruments Incorporated |
Integrated programmable bit circuit with minimal power requirement
|
GB2219901B
(en)
*
|
1988-06-17 |
1992-10-07 |
Motorola Inc |
Eprom programming
|
US4823318A
(en)
*
|
1988-09-02 |
1989-04-18 |
Texas Instruments Incorporated |
Driving circuitry for EEPROM memory cell
|
US5265052A
(en)
*
|
1989-07-20 |
1993-11-23 |
Texas Instruments Incorporated |
Wordline driver circuit for EEPROM memory cell
|
EP0961289B1
(de)
*
|
1991-12-09 |
2002-10-02 |
Fujitsu Limited |
Flash-Speicher mit besserer Löschbarkeit und dessen Schaltung
|
KR0169267B1
(ko)
*
|
1993-09-21 |
1999-02-01 |
사토 후미오 |
불휘발성 반도체 기억장치
|
JPH08293197A
(ja)
*
|
1995-04-21 |
1996-11-05 |
Nec Corp |
不揮発性半導体記憶装置
|
US6058934A
(en)
*
|
1995-11-02 |
2000-05-09 |
Chiron Diagnostics Corporation |
Planar hematocrit sensor incorporating a seven-electrode conductivity measurement cell
|
FR2753829B1
(fr)
*
|
1996-09-24 |
1998-11-13 |
|
Circuit de lecture pour memoire non volatile fonctionnant avec une basse tension d'alimentation
|
US6768165B1
(en)
|
1997-08-01 |
2004-07-27 |
Saifun Semiconductors Ltd. |
Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
|
US6021083A
(en)
*
|
1997-12-05 |
2000-02-01 |
Macronix International Co., Ltd. |
Block decoded wordline driver with positive and negative voltage modes
|
US6928001B2
(en)
|
2000-12-07 |
2005-08-09 |
Saifun Semiconductors Ltd. |
Programming and erasing methods for a non-volatile memory cell
|
US6665769B2
(en)
*
|
2001-04-05 |
2003-12-16 |
Saifun Semiconductors Ltd. |
Method and apparatus for dynamically masking an N-bit memory array having individually programmable cells
|
US6584017B2
(en)
|
2001-04-05 |
2003-06-24 |
Saifun Semiconductors Ltd. |
Method for programming a reference cell
|
US7190620B2
(en)
*
|
2002-01-31 |
2007-03-13 |
Saifun Semiconductors Ltd. |
Method for operating a memory device
|
US6700818B2
(en)
|
2002-01-31 |
2004-03-02 |
Saifun Semiconductors Ltd. |
Method for operating a memory device
|
US6917544B2
(en)
|
2002-07-10 |
2005-07-12 |
Saifun Semiconductors Ltd. |
Multiple use memory chip
|
US7136304B2
(en)
|
2002-10-29 |
2006-11-14 |
Saifun Semiconductor Ltd |
Method, system and circuit for programming a non-volatile memory array
|
US6967896B2
(en)
*
|
2003-01-30 |
2005-11-22 |
Saifun Semiconductors Ltd |
Address scramble
|
US7178004B2
(en)
|
2003-01-31 |
2007-02-13 |
Yan Polansky |
Memory array programming circuit and a method for using the circuit
|
US7142464B2
(en)
|
2003-04-29 |
2006-11-28 |
Saifun Semiconductors Ltd. |
Apparatus and methods for multi-level sensing in a memory array
|
US7123532B2
(en)
|
2003-09-16 |
2006-10-17 |
Saifun Semiconductors Ltd. |
Operating array cells with matched reference cells
|
US7652930B2
(en)
|
2004-04-01 |
2010-01-26 |
Saifun Semiconductors Ltd. |
Method, circuit and system for erasing one or more non-volatile memory cells
|
US7366025B2
(en)
*
|
2004-06-10 |
2008-04-29 |
Saifun Semiconductors Ltd. |
Reduced power programming of non-volatile cells
|
US7317633B2
(en)
|
2004-07-06 |
2008-01-08 |
Saifun Semiconductors Ltd |
Protection of NROM devices from charge damage
|
US7095655B2
(en)
|
2004-08-12 |
2006-08-22 |
Saifun Semiconductors Ltd. |
Dynamic matching of signal path and reference path for sensing
|
US7638850B2
(en)
|
2004-10-14 |
2009-12-29 |
Saifun Semiconductors Ltd. |
Non-volatile memory structure and method of fabrication
|
US7535765B2
(en)
|
2004-12-09 |
2009-05-19 |
Saifun Semiconductors Ltd. |
Non-volatile memory device and method for reading cells
|
EP1686592A3
(de)
|
2005-01-19 |
2007-04-25 |
Saifun Semiconductors Ltd. |
Teil-Löschüberprüfung
|
US8053812B2
(en)
|
2005-03-17 |
2011-11-08 |
Spansion Israel Ltd |
Contact in planar NROM technology
|
US8400841B2
(en)
|
2005-06-15 |
2013-03-19 |
Spansion Israel Ltd. |
Device to program adjacent storage cells of different NROM cells
|
US7786512B2
(en)
|
2005-07-18 |
2010-08-31 |
Saifun Semiconductors Ltd. |
Dense non-volatile memory array and method of fabrication
|
US7668017B2
(en)
|
2005-08-17 |
2010-02-23 |
Saifun Semiconductors Ltd. |
Method of erasing non-volatile memory cells
|
US7245535B2
(en)
*
|
2005-09-21 |
2007-07-17 |
Actel Corporation |
Non-volatile programmable memory cell for programmable logic array
|
US7221138B2
(en)
|
2005-09-27 |
2007-05-22 |
Saifun Semiconductors Ltd |
Method and apparatus for measuring charge pump output current
|
US7352627B2
(en)
|
2006-01-03 |
2008-04-01 |
Saifon Semiconductors Ltd. |
Method, system, and circuit for operating a non-volatile memory array
|
US7808818B2
(en)
|
2006-01-12 |
2010-10-05 |
Saifun Semiconductors Ltd. |
Secondary injection for NROM
|
US8253452B2
(en)
|
2006-02-21 |
2012-08-28 |
Spansion Israel Ltd |
Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
|
US7692961B2
(en)
|
2006-02-21 |
2010-04-06 |
Saifun Semiconductors Ltd. |
Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
|
US7760554B2
(en)
|
2006-02-21 |
2010-07-20 |
Saifun Semiconductors Ltd. |
NROM non-volatile memory and mode of operation
|
US7638835B2
(en)
|
2006-02-28 |
2009-12-29 |
Saifun Semiconductors Ltd. |
Double density NROM with nitride strips (DDNS)
|
US7701779B2
(en)
|
2006-04-27 |
2010-04-20 |
Sajfun Semiconductors Ltd. |
Method for programming a reference cell
|
US7605579B2
(en)
|
2006-09-18 |
2009-10-20 |
Saifun Semiconductors Ltd. |
Measuring and controlling current consumption and output current of charge pumps
|
US7590001B2
(en)
|
2007-12-18 |
2009-09-15 |
Saifun Semiconductors Ltd. |
Flash memory with optimized write sector spares
|
US8331084B2
(en)
|
2010-05-13 |
2012-12-11 |
General Electric Company |
Apparatus for securing electronic equipment
|