DE3682950D1 - Spannungsteiler. - Google Patents

Spannungsteiler.

Info

Publication number
DE3682950D1
DE3682950D1 DE8686107643T DE3682950T DE3682950D1 DE 3682950 D1 DE3682950 D1 DE 3682950D1 DE 8686107643 T DE8686107643 T DE 8686107643T DE 3682950 T DE3682950 T DE 3682950T DE 3682950 D1 DE3682950 D1 DE 3682950D1
Authority
DE
Germany
Prior art keywords
voltage divider
divider
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686107643T
Other languages
English (en)
Inventor
Yoshio C O Patent Divisi Okada
Mitsuru Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3682950D1 publication Critical patent/DE3682950D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
DE8686107643T 1985-06-10 1986-06-05 Spannungsteiler. Expired - Lifetime DE3682950D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12567085 1985-06-10

Publications (1)

Publication Number Publication Date
DE3682950D1 true DE3682950D1 (de) 1992-01-30

Family

ID=14915748

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686107643T Expired - Lifetime DE3682950D1 (de) 1985-06-10 1986-06-05 Spannungsteiler.

Country Status (3)

Country Link
US (1) US4663584B1 (de)
EP (1) EP0205104B1 (de)
DE (1) DE3682950D1 (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4788455A (en) * 1985-08-09 1988-11-29 Mitsubishi Denki Kabushiki Kaisha CMOS reference voltage generator employing separate reference circuits for each output transistor
JP2509596B2 (ja) * 1987-01-14 1996-06-19 株式会社東芝 中間電位生成回路
JPH0679263B2 (ja) * 1987-05-15 1994-10-05 株式会社東芝 基準電位発生回路
JPH0740050B2 (ja) * 1987-05-20 1995-05-01 松下電器産業株式会社 電圧検知回路
US4847518A (en) * 1987-11-13 1989-07-11 Harris Semiconductor Patents, Inc. CMOS voltage divider circuits
JPH0690655B2 (ja) * 1987-12-18 1994-11-14 株式会社東芝 中間電位発生回路
JPH0673092B2 (ja) * 1988-04-12 1994-09-14 日本電気株式会社 定電圧発生回路
US4864162A (en) * 1988-05-10 1989-09-05 Grumman Aerospace Corporation Voltage variable FET resistor with chosen resistance-voltage relationship
US4875023A (en) * 1988-05-10 1989-10-17 Grumman Aerospace Corporation Variable attenuator having voltage variable FET resistor with chosen resistance-voltage relationship
JPH07105472B2 (ja) * 1988-07-29 1995-11-13 株式会社東芝 入力保護回路
US5079441A (en) * 1988-12-19 1992-01-07 Texas Instruments Incorporated Integrated circuit having an internal reference circuit to supply internal logic circuits with a reduced voltage
EP0411201A1 (de) * 1989-08-04 1991-02-06 Siemens Aktiengesellschaft Potentialgenerator in einer integrierten Halbleiterschaltung
USRE40552E1 (en) 1990-04-06 2008-10-28 Mosaid Technologies, Inc. Dynamic random access memory using imperfect isolating transistors
US5212440A (en) * 1990-05-14 1993-05-18 Micron Technology, Inc. Quick response CMOS voltage reference circuit
US5027053A (en) * 1990-08-29 1991-06-25 Micron Technology, Inc. Low power VCC /2 generator
US5187386A (en) * 1991-01-16 1993-02-16 Samsung Semiconductor, Inc. Low standby current intermediate dc voltage generator
JP3094469B2 (ja) * 1991-01-18 2000-10-03 ソニー株式会社 出力バッファ回路
US5233289A (en) * 1991-04-23 1993-08-03 Harris Corporation Voltage divider and use as bias network for stacked transistors
JP2647276B2 (ja) * 1991-04-30 1997-08-27 株式会社東芝 定電位発生用半導体装置
US5221864A (en) * 1991-12-17 1993-06-22 International Business Machines Corporation Stable voltage reference circuit with high Vt devices
US5187429A (en) * 1992-02-20 1993-02-16 Northern Telecom Limited Reference voltage generator for dynamic random access memory
US5302888A (en) * 1992-04-01 1994-04-12 Texas Instruments Incorporated CMOS integrated mid-supply voltage generator
US5175490A (en) * 1992-04-03 1992-12-29 Hewlett Packard Company Reference voltage source
JP3381937B2 (ja) * 1992-05-22 2003-03-04 株式会社東芝 中間電位発生回路
JPH06223568A (ja) * 1993-01-29 1994-08-12 Mitsubishi Electric Corp 中間電位発生装置
KR960003219B1 (ko) * 1993-04-16 1996-03-07 삼성전자주식회사 반도체 집적회로의 중간전위 발생회로
JPH0793977A (ja) * 1993-04-26 1995-04-07 Samsung Electron Co Ltd 半導体メモリ装置の中間電圧発生回路
KR0124046B1 (ko) * 1993-11-18 1997-11-25 김광호 반도체메모리장치의 승압레벨 감지회로
JP3626521B2 (ja) * 1994-02-28 2005-03-09 三菱電機株式会社 基準電位発生回路、電位検出回路および半導体集積回路装置
IT1274537B (it) 1994-05-20 1997-07-17 Fujitsu Ltd Apparato a circuito elettronico per trasmettere segnali attraverso un bus e dispositivo a semiconduttore per generare una predeterminata tensione stabile
JP3246541B2 (ja) * 1994-06-06 2002-01-15 横河電機株式会社 半導体装置
JP3207680B2 (ja) * 1994-08-30 2001-09-10 株式会社東芝 半導体集積回路
JP3542649B2 (ja) * 1994-12-28 2004-07-14 株式会社ルネサステクノロジ 半導体記憶装置およびその動作方法
US5530395A (en) * 1995-04-03 1996-06-25 Etron Technology Inc. Supply voltage level control using reference voltage generator and comparator circuits
DE19533768C1 (de) * 1995-09-12 1996-08-29 Siemens Ag Stromtreiberschaltung mit Querstromregelung
JPH09162713A (ja) * 1995-12-11 1997-06-20 Mitsubishi Electric Corp 半導体集積回路
JP3022815B2 (ja) * 1997-07-24 2000-03-21 日本電気アイシーマイコンシステム株式会社 中間電位生成回路
US5959444A (en) * 1997-12-12 1999-09-28 Micron Technology, Inc. MOS transistor circuit and method for biasing a voltage generator
FR2781317B1 (fr) * 1998-07-17 2005-08-26 St Microelectronics Sa Source de tension de basse impedance
US6388495B1 (en) * 2001-02-23 2002-05-14 Sun Microsystems, Inc. Dynamic termination and clamping circuit
US7012415B2 (en) * 2003-10-16 2006-03-14 Micrel, Incorporated Wide swing, low power current mirror with high output impedance
US7528648B2 (en) * 2006-02-23 2009-05-05 Cypress Semiconductor Corporation Replica biased system
WO2008001255A1 (en) * 2006-06-26 2008-01-03 Nxp B.V. A constant voltage generating device
JP2009147430A (ja) * 2007-12-11 2009-07-02 Nec Electronics Corp バッファ回路
WO2013154585A1 (en) * 2012-04-13 2013-10-17 Intel Corporation Frequency control system with dual-input bias generator to separately receive management and operational controls
JP6317269B2 (ja) * 2015-02-02 2018-04-25 ローム株式会社 定電圧生成回路
US20230140757A1 (en) * 2020-02-19 2023-05-04 Rohm Co., Ltd. Clamp circuit
US11953927B2 (en) * 2021-04-22 2024-04-09 Taiwan Semiconductor Manufacturing Company Ltd. Bias generating devices and methods for generating bias

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2447610A1 (fr) * 1979-01-26 1980-08-22 Commissariat Energie Atomique Generateur de tension de reference et circuit de mesure de la tension de seuil d'un transistor mos, applicable a ce generateur de tension de reference
US4346344A (en) * 1979-02-08 1982-08-24 Signetics Corporation Stable field effect transistor voltage reference
JPS5840633A (ja) * 1981-09-04 1983-03-09 Seiko Epson Corp 定低電圧回路
JPS57157315A (en) * 1981-03-24 1982-09-28 Nec Corp Intermediate voltage generating circuit
JPS5822425A (ja) * 1981-08-04 1983-02-09 Toshiba Corp 基準電圧発生回路
US4464588A (en) * 1982-04-01 1984-08-07 National Semiconductor Corporation Temperature stable CMOS voltage reference
JPS60103827A (ja) * 1983-11-11 1985-06-08 Fujitsu Ltd 電圧変換回路

Also Published As

Publication number Publication date
US4663584A (en) 1987-05-05
US4663584B1 (en) 1996-05-21
EP0205104A3 (en) 1987-09-23
EP0205104A2 (de) 1986-12-17
EP0205104B1 (de) 1991-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP T